Read Books Online and Download eBooks, EPub, PDF, Mobi, Kindle, Text Full Free.
Distributed Model For Thermal Characterisation Of Oxide Isolated Silicone Germanium Heterojunction Bipolar Transistors
Download Distributed Model For Thermal Characterisation Of Oxide Isolated Silicone Germanium Heterojunction Bipolar Transistors full books in PDF, epub, and Kindle. Read online Distributed Model For Thermal Characterisation Of Oxide Isolated Silicone Germanium Heterojunction Bipolar Transistors ebook anywhere anytime directly on your device. Fast Download speed and no annoying ads. We cannot guarantee that every ebooks is available!
Book Synopsis Distributed Model for Thermal Characterisation of Oxide Isolated Silicone Germanium Heterojunction Bipolar Transistors by : Sharath Patil
Download or read book Distributed Model for Thermal Characterisation of Oxide Isolated Silicone Germanium Heterojunction Bipolar Transistors written by Sharath Patil and published by . This book was released on 2011 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Demand for high-speed and cost-effective devices has resulted in the development of smaller, high frequency devices. Since semiconductor devices are getting smaller, self-heating effects have become more important. Self-heating increases the temperature of the devices and results in variations in the electrical properties of the circuit in which these devices are used. Hence, it is important to accurately characterize the self-heating effects and develop reliable models, so that these effects can be taken into consideration in the simulations during the design process. This work deals with the development of the Vertical Bipolar Inter-Company (VBIC) model parameters to characterize self-heating in SOI SiGe transistors which have been fabricated by National Semiconductors (NSC). The distributed nature of thermal impedance of the wafer has been studied. The dependence of thermal resistance on the power dissipation has also been verified by DC characterization results. The time domain, DC and frequency domain measurements provide similar results for thermal resistance. The thermal resistance varies from 2400 K/W to 4700 K/W for a 0.25x20 [mu]m2 device manufactured by NSC.
Book Synopsis Silicon-germanium Heterojunction Bipolar Transistors by : John D. Cressler
Download or read book Silicon-germanium Heterojunction Bipolar Transistors written by John D. Cressler and published by Artech House. This book was released on 2003 with total page 590 pages. Available in PDF, EPUB and Kindle. Book excerpt: This informative, new resource presents the first comprehensive treatment of silicon-germanium heterojunction bipolar transistors (SiGe HBTs). It offers you a complete, from-the-ground-up understanding of SiGe HBT devices and technology, from a very broad perspective. The book covers motivation, history, materials, fabrication, device physics, operational principles, and circuit-level properties associated with this new cutting-edge semiconductor device technology. Including over 400 equations and more than 300 illustrations, this hands-on reference shows you in clear and concise language how to design, simulate, fabricate, and measure a SiGe HBT.
Book Synopsis Advanced Modeling of Silicon-Germanium Heterojunction Bipolar Transistors by : Andreas Pawlak
Download or read book Advanced Modeling of Silicon-Germanium Heterojunction Bipolar Transistors written by Andreas Pawlak and published by Tudpress Verlag Der Wissenschaften Gmbh. This book was released on 2015-10-14 with total page 244 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon-Germanium Heterojunction Bipolar Transistors (SiGe HBTs) are perfectly suited for high-speed electronics. Since the fabrication costs per design cycle are rapidly increasing with progressing frequency and complexity of the systems, accurate compact models are essential in order to enable robust circuit design. This thesis focuses on selected important physical effects in advanced SiGe HBTs, which have been either insufficiently modeled or completely missing in conventional compact models. New compact model equations for the transfer current were derived and successfully applied to a large set of different technologies. Hereby, the "Generalized Integral Charge Control Relation" was used as a foundation. A physics-based model utilizing small-signal parameters obtained from measurements is derived for modeling the current dependent collector charge. A brief chapter about substrate effects in bipolar transistors comprises the derivation of a compact model for the bias-dependent substrate resistance as well as a proper partitioning of the substrate capacitance. New extraction methods for compact model parameters are introduced and the application of existing methods to advanced processes is discussed. The derived joint extraction method for the emitter and thermal resistance as well as a scalable model for the transfer current have been successfully applied to experimental data of fast HBTs. The derived model equations were applied to a selected very advanced SiGe HBT process developed by IHP. Highly accurate models for DC- and small-signal as well as for large-signal characteristics are presented.
Book Synopsis Silicon Germanium Heterojunction Bipolar Transistors by : Staffan Bruce
Download or read book Silicon Germanium Heterojunction Bipolar Transistors written by Staffan Bruce and published by . This book was released on 1999 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Microwave Characterization and Modeling of Silicon-germanium Heterojunction Bipolar Transistors by : William E. Ansley
Download or read book Microwave Characterization and Modeling of Silicon-germanium Heterojunction Bipolar Transistors written by William E. Ansley and published by . This book was released on 1998 with total page 178 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Study of Low-temperature Effects in Silicon-germanium Heterojunction Bipolar Transistor Technology by : Adnan Ahmed
Download or read book Study of Low-temperature Effects in Silicon-germanium Heterojunction Bipolar Transistor Technology written by Adnan Ahmed and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis investigates the effects of low temperatures on Silicon Germanium (SiGe) Hterojunction Bipolar Transistors (HBT) BiCMOS technology. A comprehensive set of dc measurements were taken on first, second, third and fourth generation IBM SiGe technology over a range of temperatures (room temperature to 43K for first generation, and room temperature to 15K for the rest). This work is unique in the sense that this sort of comprehensive study of dc characteristics on four SiGe HBT technology generations over a wide range of temperatures has never been done before to the best of the author's knowledge.
Book Synopsis Thermal Characterization and Modeling of Heterojunction Bipolar Transistors by : David S. Whitefield
Download or read book Thermal Characterization and Modeling of Heterojunction Bipolar Transistors written by David S. Whitefield and published by . This book was released on 1993 with total page 246 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Estimation of Thermal Impedance Parameters of Silicone Germanium Heterojunction Bipolar Transistors by : Arun Thomas Karingada
Download or read book Estimation of Thermal Impedance Parameters of Silicone Germanium Heterojunction Bipolar Transistors written by Arun Thomas Karingada and published by . This book was released on 2011 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon Germanium (SiGe) hetero junction bipolar transistors (HBTs) are used in a variety of circuits like analog mixed signal and RF(radio frequency) circuits. As the device gets smaller these days the self heating affects the performance of the SiGe HBTs. This paper uses theoretical methods based on device geometry and material properties to calculate the thermal resistance and thermal capacitance of SiGe HBT. In addition to theoretical estimations time domain, frequency domain and DC measurements are done on National Semiconductor's CBC8 HBTs which is used to extract the values of thermal impedance parameters.
Book Synopsis High Frequency Characterization of Silicon-germanium Heterojunction Bipolar Transistors by : Shiming Zhang
Download or read book High Frequency Characterization of Silicon-germanium Heterojunction Bipolar Transistors written by Shiming Zhang and published by . This book was released on 1999 with total page 214 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Device Characterization and Compact Modeling of the SiGe HBT in Extreme Temperature Environments by : Beth Olivia Woods
Download or read book Device Characterization and Compact Modeling of the SiGe HBT in Extreme Temperature Environments written by Beth Olivia Woods and published by . This book was released on 2013 with total page 750 pages. Available in PDF, EPUB and Kindle. Book excerpt: The silicon germanium heterojunction bipolar transistor, SiGe HBT, has very high frequency response but limited voltage range. Commercial communication applications in wireless and system integration have driven the development of the SiGe HBT. However, the device's excellent electrical performance goes beyond the commercial environment. The SiGe HBT performs exceptionally at low temperatures. The device DC current gain and AC small-signal gain significantly increase in the cryogenic temperature range. Applications at low temperatures with expansive temperature range specifications need an HBT compact model to accurately represent the device's performance. In this work, a compact model referenced at 300K was developed to accurately represent both DC and AC electrical performance of the SiGe HBT over an extended temperature range, down to 93K. This single expansive temperature, SET, model supports all functions of circuit simulation; DC quiescent operation and AC frequency response. The SET model was developed from the Mextram 504.7 bipolar model and accurately represents full transistor operation over an extreme temperature environment. The model correctly simulates SiGe HBT DC output performance from saturation, through quasi-saturation and the linear region including impact ionization effects. This model was developed through a combination of physical calculations based on doping profiles and optimization techniques for modeling fitting. The SET model of this dissertation added 32 parameters to the original Mextram 504.7 model's 78 parameters. The device's static and dynamic performance over the full temperature range down to 93K was fitted with a single group of SET model parameters. The model results show excellent correlation with measured data over the entire temperature range.
Book Synopsis SiGe Heterojunction Bipolar Transistors by : Peter Ashburn
Download or read book SiGe Heterojunction Bipolar Transistors written by Peter Ashburn and published by John Wiley & Sons. This book was released on 2004-02-06 with total page 286 pages. Available in PDF, EPUB and Kindle. Book excerpt: SiGe HBTs is a hot topic within the microelectronics community because of its applications potential within integrated circuits operating at radio frequencies. Applications range from high speed optical networking to wireless communication devices. The addition of germanium to silicon technologies to form silicon germanium (SiGe) devices has created a revolution in the semiconductor industry. These transistors form the enabling devices in a wide range of products for wireless and wired communications. This book features: SiGe products include chip sets for wireless cellular handsets as well as WLAN and high-speed wired network applications Describes the physics and technology of SiGe HBTs, with coverage of Si and Ge bipolar transistors Written with the practising engineer in mind, this book explains the operating principles and applications of bipolar transistor technology. Essential reading for practising microelectronics engineers and researchers. Also, optical communications engineers and communication technology engineers. An ideal reference tool for masters level students in microelectronics and electronics engineering.
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2540 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Semiconductor Material and Device Characterization by : Dieter K. Schroder
Download or read book Semiconductor Material and Device Characterization written by Dieter K. Schroder and published by John Wiley & Sons. This book was released on 2015-06-29 with total page 800 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.
Book Synopsis American Doctoral Dissertations by :
Download or read book American Doctoral Dissertations written by and published by . This book was released on 1997 with total page 806 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Essderc'98 written by and published by Atlantica Séguier Frontières. This book was released on 1998 with total page 680 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Compact Modeling by : Gennady Gildenblat
Download or read book Compact Modeling written by Gennady Gildenblat and published by Springer Science & Business Media. This book was released on 2010-06-22 with total page 531 pages. Available in PDF, EPUB and Kindle. Book excerpt: Most of the recent texts on compact modeling are limited to a particular class of semiconductor devices and do not provide comprehensive coverage of the field. Having a single comprehensive reference for the compact models of most commonly used semiconductor devices (both active and passive) represents a significant advantage for the reader. Indeed, several kinds of semiconductor devices are routinely encountered in a single IC design or in a single modeling support group. Compact Modeling includes mostly the material that after several years of IC design applications has been found both theoretically sound and practically significant. Assigning the individual chapters to the groups responsible for the definitive work on the subject assures the highest possible degree of expertise on each of the covered models.
Book Synopsis Scientific and Technical Aerospace Reports by :
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1987 with total page 920 pages. Available in PDF, EPUB and Kindle. Book excerpt:
