Semi-Insulating III–V Materials

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Publisher : Springer Science & Business Media
ISBN 13 : 1468491938
Total Pages : 366 pages
Book Rating : 4.4/5 (684 download)

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Book Synopsis Semi-Insulating III–V Materials by : REES

Download or read book Semi-Insulating III–V Materials written by REES and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 366 pages. Available in PDF, EPUB and Kindle. Book excerpt: The study of deep levels in semiconductors has seen considerable growth in recent years. Many new techniques have become available for investigating both the electronic properties of deep levels and the chemical nature of the defects from which they arise. This increasing interest has been stimulated by the importance of the subject to device technology, in particular those microwave and opto-electronic devices made from GaAs, InP and their alloys. While previous conferences have covered specialist areas of deep level technology, the meeting described here was arranged to draw together workers from these separate fields of study. The following papers reflect the breadth of interests represented at the conference. For the sake of uniformity we have chosen the English alternative where an American expression has been used. We have also sought to improve grammar, sometimes without the approval of the author in the interests of rapid publication. The Editor wishes to thank the referees for their ready advice at all stages, Paul Jay who helped with many of the editorial duties and Muriel Howes and Lorraine Jones for rapid and accurate typing.

GaAs Microelectronics

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Publisher : Academic Press
ISBN 13 : 1483217779
Total Pages : 472 pages
Book Rating : 4.4/5 (832 download)

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Book Synopsis GaAs Microelectronics by : Norman G. Einspruch

Download or read book GaAs Microelectronics written by Norman G. Einspruch and published by Academic Press. This book was released on 2014-12-01 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: VLSI Electronics Microstructure Science, Volume 11: GaAs Microelectronics presents the important aspects of GaAs (Gallium Arsenide) IC technology development ranging from materials preparation and IC fabrication to wafer evaluation and chip packaging. The volume is comprised of eleven chapters. Chapter 1 traces the historical development of GaAs technology for high-speed and high-frequency applications. This chapter summarizes the important properties of GaAs that serve to make this material and its related compounds technologically important. Chapter 2 covers GaAs substrate growth, ion implantation and annealing, and materials characterization, technologies that are essential for IC development. Chapters 3-6 describe the various IC technologies that are currently under development. These include microwave and digital MESFET ICs, the most mature technologies, and bipolar and field-effect heterostructure transistor ICs. The high-speed capability of GaAs ICs introduces new problems, on-wafer testing and packaging. These topics are discussed in Chapters 7 and 8. Applications for GaAs ICs are covered in Chapters 9 and 10. The first of these chapters is concerned with high speed computer applications; the second addresses military applications. The book concludes with a chapter on radiation effects in GaAs ICs. Scientists, engineers, researchers, device designers, and systems architects will find the book useful.

GaAs Devices and Circuits

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Publisher : Springer Science & Business Media
ISBN 13 : 1489919899
Total Pages : 677 pages
Book Rating : 4.4/5 (899 download)

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Book Synopsis GaAs Devices and Circuits by : Michael S. Shur

Download or read book GaAs Devices and Circuits written by Michael S. Shur and published by Springer Science & Business Media. This book was released on 2013-11-21 with total page 677 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaAs devices and integrated circuits have emerged as leading contenders for ultra-high-speed applications. This book is intended to be a reference for a rapidly growing GaAs community of researchers and graduate students. It was written over several years and parts of it were used for courses on GaAs devices and integrated circuits and on heterojunction GaAs devices developed and taught at the University of Minnesota. Many people helped me in writing this book. I would like to express my deep gratitude to Professor Lester Eastman of Cornell University, whose ideas and thoughts inspired me and helped to determine the direction of my research work for many years. I also benefited from numerous discussions with his students and associates and from the very atmosphere of the pursuit of excellence which exists in his group. I would like to thank my former and present co-workers and colleagues-Drs. Levinstein and Gelmont of the A. F. Ioffe Institute of Physics and Technology, Professor Melvin Shaw of Wayne State University, Dr. Kastalsky of Bell Communi cations, Professor Gary Robinson of Colorado State University, Professor Tony Valois, and Dr. Tim Drummond of Sandia Labs-for their contributions to our joint research and for valuable discussions. My special thanks to Professor Morko.;, for his help, his ideas, and the example set by his pioneering work. Since 1978 I have been working with engineers from Honeywell, Inc.-Drs.

Analytical Techniques for the Characterization of Compound Semiconductors

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Author :
Publisher : Elsevier
ISBN 13 : 0444596720
Total Pages : 554 pages
Book Rating : 4.4/5 (445 download)

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Book Synopsis Analytical Techniques for the Characterization of Compound Semiconductors by : G. Bastard

Download or read book Analytical Techniques for the Characterization of Compound Semiconductors written by G. Bastard and published by Elsevier. This book was released on 1991-07-26 with total page 554 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume is a collection of 96 papers presented at the above Conference. The scope of the work includes optical and electrical methods as well as techniques for structural and compositional characterization. The contributed papers report on topics such as X-ray diffraction, TEM, depth profiling, photoluminescence, Raman scattering and various electrical methods. Of particular interest are combinations of different techniques providing complementary information. The compound semiconductors reviewed belong mainly to the III-V and III-VI families. The papers in this volume will provide a useful reference on the implications of new technologies in the characterization of compound semiconductors.

Semiconductors and Semimetals

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Author :
Publisher : Academic Press
ISBN 13 : 0080864104
Total Pages : 393 pages
Book Rating : 4.0/5 (88 download)

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Book Synopsis Semiconductors and Semimetals by :

Download or read book Semiconductors and Semimetals written by and published by Academic Press. This book was released on 1984-06-11 with total page 393 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors and Semimetals

Semiconductor Physical Electronics

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Publisher : Springer Science & Business Media
ISBN 13 : 146130489X
Total Pages : 514 pages
Book Rating : 4.4/5 (613 download)

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Book Synopsis Semiconductor Physical Electronics by : Sheng S. Li

Download or read book Semiconductor Physical Electronics written by Sheng S. Li and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 514 pages. Available in PDF, EPUB and Kindle. Book excerpt: The purpose of this book is to provide the reader with a self-contained treatment of fundamen tal solid state and semiconductor device physics. The material presented in the text is based upon the lecture notes of a one-year graduate course sequence taught by this author for many years in the ·Department of Electrical Engineering of the University of Florida. It is intended as an introductory textbook for graduate students in electrical engineering. However, many students from other disciplines and backgrounds such as chemical engineering, materials science, and physics have also taken this course sequence, and will be interested in the material presented herein. This book may also serve as a general reference for device engineers in the semiconductor industry. The present volume covers a wide variety of topics on basic solid state physics and physical principles of various semiconductor devices. The main subjects covered include crystal structures, lattice dynamics, semiconductor statistics, energy band theory, excess carrier phenomena and recombination mechanisms, carrier transport and scattering mechanisms, optical properties, photoelectric effects, metal-semiconductor devices, the p--n junction diode, bipolar junction transistor, MOS devices, photonic devices, quantum effect devices, and high speed III-V semiconductor devices. The text presents a unified and balanced treatment of the physics of semiconductor materials and devices. It is intended to provide physicists and mat erials scientists with more device backgrounds, and device engineers with a broader knowledge of fundamental solid state physics.

Microscopy of Semiconducting Materials 1987, Proceedings of the Institute of Physics Conference, Oxford University, April 1987

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Author :
Publisher : CRC Press
ISBN 13 : 1000157016
Total Pages : 836 pages
Book Rating : 4.0/5 (1 download)

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Book Synopsis Microscopy of Semiconducting Materials 1987, Proceedings of the Institute of Physics Conference, Oxford University, April 1987 by : A.G. Cullis

Download or read book Microscopy of Semiconducting Materials 1987, Proceedings of the Institute of Physics Conference, Oxford University, April 1987 written by A.G. Cullis and published by CRC Press. This book was released on 2021-02-01 with total page 836 pages. Available in PDF, EPUB and Kindle. Book excerpt: The various forms of microscopy and related microanalytical techniques are making unique contributions to semiconductor research and development that underpin many important areas of microelectronics technology. Microscopy of Semiconducting Materials 1987 highlights the progress that is being made in semiconductor microscopy, primarily in electron probe methods as well as in light optical and ion scattering techniques. The book covers the state of the art, with sections on high resolution microscopy, epitaxial layers, quantum wells and superlattices, bulk gallium arsenide and other compounds, properties of dislocations, device silicon and dielectric structures, silicides and contacts, device testing, x-ray techniques, microanalysis, and advanced scanning microscopy techniques. Contributed by numerous international experts, this volume will be an indispensable guide to recent developments in semiconductor microscopy for all those who work in the field of semiconducting materials and research development.

State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXXI)

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Author :
Publisher : The Electrochemical Society
ISBN 13 : 9781566772402
Total Pages : 266 pages
Book Rating : 4.7/5 (724 download)

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Book Synopsis State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXXI) by : D. N. Buckley

Download or read book State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXXI) written by D. N. Buckley and published by The Electrochemical Society. This book was released on 1999 with total page 266 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Chemistry of the Semiconductor Industry

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Publisher : Springer Science & Business Media
ISBN 13 : 9780216920057
Total Pages : 456 pages
Book Rating : 4.9/5 (2 download)

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Book Synopsis Chemistry of the Semiconductor Industry by : S.J. Moss

Download or read book Chemistry of the Semiconductor Industry written by S.J. Moss and published by Springer Science & Business Media. This book was released on 1989-02-28 with total page 456 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers the chemistry of the major processes involved in the manufacture of integrated circuits. The authors describe all the major processes in use, together with some interesting processes which are currently being developed and hold future promise. Each chapter covers the current state of knowledge of the underlying chemistry of a particular process, and identifies areas of uncertainty requiring further research.

International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering

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Publisher :
ISBN 13 :
Total Pages : 442 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering by :

Download or read book International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering written by and published by . This book was released on 1999 with total page 442 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Report of NRL Progress

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Publisher :
ISBN 13 :
Total Pages : 628 pages
Book Rating : 4.:/5 (42 download)

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Book Synopsis Report of NRL Progress by : Naval Research Laboratory (U.S.)

Download or read book Report of NRL Progress written by Naval Research Laboratory (U.S.) and published by . This book was released on 1979 with total page 628 pages. Available in PDF, EPUB and Kindle. Book excerpt:

RF and Microwave Semiconductor Device Handbook

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Publisher : CRC Press
ISBN 13 : 1420039970
Total Pages : 336 pages
Book Rating : 4.4/5 (2 download)

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Book Synopsis RF and Microwave Semiconductor Device Handbook by : Mike Golio

Download or read book RF and Microwave Semiconductor Device Handbook written by Mike Golio and published by CRC Press. This book was released on 2017-12-19 with total page 336 pages. Available in PDF, EPUB and Kindle. Book excerpt: Offering a single volume reference for high frequency semiconductor devices, this handbook covers basic material characteristics, system level concerns and constraints, simulation and modeling of devices, and packaging. Individual chapters detail the properties and characteristics of each semiconductor device type, including: Varactors, Schottky diodes, transit-time devices, BJTs, HBTs, MOSFETs, MESFETs, and HEMTs. Written by leading researchers in the field, the RF and Microwave Semiconductor Device Handbook provides an excellent starting point for programs involving development, technology comparison, or acquisition of RF and wireless semiconductor devices.

Japanese Science and Technology

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Publisher :
ISBN 13 :
Total Pages : 724 pages
Book Rating : 4.E/5 ( download)

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Book Synopsis Japanese Science and Technology by :

Download or read book Japanese Science and Technology written by and published by . This book was released on 1986 with total page 724 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Semiconductor Device Modelling

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Publisher : Springer Science & Business Media
ISBN 13 : 1447110331
Total Pages : 267 pages
Book Rating : 4.4/5 (471 download)

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Book Synopsis Semiconductor Device Modelling by : Christopher M. Snowden

Download or read book Semiconductor Device Modelling written by Christopher M. Snowden and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 267 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor device modelling has developed in recent years from being solely the domain of device physicists to span broader technological disciplines involved in device and electronic circuit design and develop ment. The rapid emergence of very high speed, high density integrated circuit technology and the drive towards high speed communications has meant that extremely small-scale device structures are used in contempor ary designs. The characterisation and analysis of these devices can no longer be satisfied by electrical measurements alone. Traditional equivalent circuit models and closed-form analytical models cannot always provide consis tently accurate results for all modes of operation of these very small devices. Furthermore, the highly competitive nature of the semiconductor industry has led to the need to minimise development costs and lead-time associated with introducing new designs. This has meant that there has been a greater demand for models capable of increasing our understanding of how these devices operate and capable of predicting accurate quantitative results. The desire to move towards computer aided design and expert systems has reinforced the need for models capable of representing device operation under DC, small-signal, large-signal and high frequency operation. It is also desirable to relate the physical structure of the device to the electrical performance. This demand for better models has led to the introduction of improved equivalent circuit models and a upsurge in interest in using physical models.

GaAs IC Symposium

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Publisher :
ISBN 13 :
Total Pages : 206 pages
Book Rating : 4.:/5 (318 download)

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Book Synopsis GaAs IC Symposium by :

Download or read book GaAs IC Symposium written by and published by . This book was released on 1982 with total page 206 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Basic Properties of III-V Devices – Understanding Mysterious Trapping Phenomena

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Publisher : kassel university press GmbH
ISBN 13 : 3862195414
Total Pages : 762 pages
Book Rating : 4.8/5 (621 download)

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Book Synopsis Basic Properties of III-V Devices – Understanding Mysterious Trapping Phenomena by : Kompa, Günter

Download or read book Basic Properties of III-V Devices – Understanding Mysterious Trapping Phenomena written by Kompa, Günter and published by kassel university press GmbH. This book was released on 2014 with total page 762 pages. Available in PDF, EPUB and Kindle. Book excerpt: Trapping effects in III-V devices pose a great challenge to any microwave device modeler. Understanding their physical origins is of prime importance to create physics-related reliable device models. The treatment of trapping phenomena is commonly beyond the classical higher-education level of communication engineers. This book provides any basic material needed to understand trapping effects occurring primarily in GaAs and GaN power HEMT devices. As the text material covers interdisciplinary topics such as crystal defects and localized charges, trap centers and trap dynamics, deep-level transient spectroscopy, and trap centers in passivation layers, the book will be of interest to graduate students of electrical engineering, communication engineering, and physics as well as materials, device, and circuit engineers in research and industry.

State-of-the-Art Program on Compound Semiconductors 50 (SOTAPOCS 50) -and- Processes at the Semiconductor Solution Interface 3

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Author :
Publisher : The Electrochemical Society
ISBN 13 : 1566777119
Total Pages : 447 pages
Book Rating : 4.5/5 (667 download)

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Book Synopsis State-of-the-Art Program on Compound Semiconductors 50 (SOTAPOCS 50) -and- Processes at the Semiconductor Solution Interface 3 by : A. G. Baca

Download or read book State-of-the-Art Program on Compound Semiconductors 50 (SOTAPOCS 50) -and- Processes at the Semiconductor Solution Interface 3 written by A. G. Baca and published by The Electrochemical Society. This book was released on 2009-05 with total page 447 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue of ECS Transactions contain the most recent developments in compound semiconductors encompassing advanced devices, materials growth, characterization, processing, device fabrication, reliability, and other related topics, as well as the most recent developments in processes at the semiconductor/solution interface including etching, oxidation, passivation, film growth, electrochemical and photoelectrochemical processes, electroluminescence, photoluminescence, and other related topics.