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Development Of Metalorganic Molecular Beam Epitaxy For The Growth Of Indium053 Gallium047 Arsenic Indium Phosphide Heterojunction Bipolar Transistors And Quantum Well Optoelectronic Devices
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Book Synopsis Development of Metalorganic Molecular Beam Epitaxy for the Growth of Indium(0.53) Gallium(0.47) Arsenic/indium Phosphide Heterojunction Bipolar Transistors and Quantum Well Optoelectronic Devices by : Steven Lee Jackson
Download or read book Development of Metalorganic Molecular Beam Epitaxy for the Growth of Indium(0.53) Gallium(0.47) Arsenic/indium Phosphide Heterojunction Bipolar Transistors and Quantum Well Optoelectronic Devices written by Steven Lee Jackson and published by . This book was released on 1994 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Metalorganic molecular beam epitaxy (MOMBE) offers several potential advantages over molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) for the development of high-speed/reliability C-doped In$\rm\sb{0.53}Ga\sb{0.47}$As/InP heterojunction bipolar transistors (HBTs). Improvements in reproducibility of alloy composition and layer thickness for $\rm In\sb xGa\sb{1-x}As$ and InP, which are afforded by MOMBE relative to MBE, offer clear advantages for manufacturing. The potential for reduction of the H passivation of C acceptors and substrate temperature sensitivity of the alloy composition, using CCl$\sb4$ as the C source, offers advantages relative to MOCVD. However, the lack of an efficient gaseous n-type dopant source limits the potential for scalability of MOMBE. This thesis describes recent work on the development of MOMBE for the growth of C-doped $\rm In\sb{0.53}Ga\sb{0.47}As/InP$ HBTs. Issues relevant to obtaining abrupt heterointerfaces, the development of a new gaseous Si dopant source, SiBr$\sb4$, and the sources of H passivation of C acceptors in C-doped $\rm In\sb{0.53}Ga\sb{0.47}As$ have been investigated. The use of a common Ta-baffled hydride cracker for the dissociation of AsH$\sb3$ and PH$\sb3$ at 950$\sp\circ$C was found to result in the generation of As$\sb2$, P$\sb2$, and H$\sb2$. However, severe group V memory effects were observed for P and As. Significantly faster switching was obtained, by using separate open Ta tube crackers. Single and multiple quantum well $\rm In\sb{0.53}Ga\sb{0.47}As/InP$ heterostructures containing quantum wells as narrow as 10 A exhibit intense photoluminescence and ninth order satellite peaks in resolution x-ray diffraction rocking curves. SiBr$\sb4$ has been demonstrated as an extremely efficient gaseous Si doping source which is compatible with MOMBE. Net electron concentrations of n = $\rm2.3\times10\sp{20}\ cm\sp{-3}$ have been obtained in InP grown at 450$\sp\circ$C without morphology degradation. Specific contact resistances of $\rm\rho\sb c=6\times10\sp{-8}\ \Omega$-cm$\sp{2}$ have been obtained by using nonalloyed Ti/Pt/Au contacts directly to these heavily-doped InP layers. $\rm In\sb{0.53}Ga\sb{0.47}As/InP$ HBTs using InP contact layers with comparably low specific contact resistances have been demonstrated. A blue shift in the photoluminescence peak energy of approximately 265 meV is observed for InP layers doped to n = $\rm7\times10\sp{19}\ cm\sp{-3}.$ Carbon doping of $\rm In\sb{0.53}Ga\sb{0.47}As$ in gas source molecular beam epitaxy and MOMBE using CCl$\sb4$ has been investigated. Net hole concentrations of p = $\rm1.8\times10\sp{20}\ cm\sp{-3}$ have been obtained with negligible H passivation for hole concentrations as high as p = $\rm8\times10\sp{19}\ cm\sp{-3}$. The degree of H passivation was found to be highly dependent on the AsH$\sb3$ cracking temperature with an enhanced effect at substrate temperatures ${
Book Synopsis Molecular Beam Epitaxy by : John Orton
Download or read book Molecular Beam Epitaxy written by John Orton and published by OUP Oxford. This book was released on 2015-06-25 with total page 529 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book is a history of Molecular Beam Epitaxy (MBE) as applied to the growth of semiconductor thin films (note that it does not cover the subject of metal thin films). It begins by examining the origins of MBE, first of all looking at the nature of molecular beams and considering their application to fundamental physics, to the development of nuclear magnetic resonance and to the invention of the microwave MASER. It shows how molecular beams of silane (SiH4) were used to study the nucleation of silicon films on a silicon substrate and how such studies were extended to compound semiconductors such as GaAs. From such surface studies in ultra-high vacuum the technique developed into a method of growing high quality single crystal films of a wide range of semiconductors. Comparing this with earlier evaporation methods of deposition and with other epitaxial deposition methods such as liquid phase and vapour phase epitaxy (LPE and VPE). The text describes the development of MBE machines from the early âhome-madeâ variety to that of commercial equipment and show how MBE was gradually refined to produce high quality films with atomic dimensions. This was much aided by the use of various in-situ surface analysis techniques, such as reflection high energy electron diffraction (RHEED) and mass spectrometry, a feature unique to MBE. It looks at various modified versions of the basic MBE process, then proceed to describe their application to the growth of so-called âlow-dimensional structuresâ (LDS) based on ultra-thin heterostructure films with thickness of order a few molecular monolayers. Further chapters cover the growth of a wide range of different compounds and describe their application to fundamental physics and to the fabrication of electronic and opto-electronic devices. The authors study the historical development of all these aspects and emphasise both the (often unexpected) manner of their discovery and development and the unique features which MBE brings to the growth of extremely complex structures with monolayer accuracy.
Book Synopsis Gas Source Molecular Beam Epitaxy by : Morton B. Panish
Download or read book Gas Source Molecular Beam Epitaxy written by Morton B. Panish and published by Springer Science & Business Media. This book was released on 2013-03-07 with total page 441 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first book to present a unified treatment of hybrid source MBE and metalorganic MBE. Since metalorganic MBE permits selective area growth, the latest information on its application to the INP/GaInAs(P) system is presented. This system has been highlighted because it is one of rising importance, vital to optical communications systems, and has great potential for future ultra-highspeed electronics. The use of such analytical methods as high resolution x-ray diffraction, secondary ion mass spectroscopy, several photoluminescence methods, and the use of active devices for materials evaluation is shown in detail.
Book Synopsis Molecular Beam Epitaxy by : Brian R. Pamplin
Download or read book Molecular Beam Epitaxy written by Brian R. Pamplin and published by Elsevier. This book was released on 2017-08-31 with total page 181 pages. Available in PDF, EPUB and Kindle. Book excerpt: Molecular Beam Epitaxy introduces the reader to the use of molecular beam epitaxy (MBE) in the generation of III-V and IV-VI compounds and alloys and describes the semiconductor and integrated optics reasons for using the technique. Topics covered include semiconductor superlattices by MBE; design considerations for MBE systems; periodic doping structure in gallium arsenide (GaAs); nonstoichiometry and carrier concentration control in MBE of compound semiconductors; and MBE techniques for IV-VI optoelectronic devices. The use of MBE to fabricate integrated optical devices and to study semiconductor surface and crystal physics is also considered. This book is comprised of eight chapters and opens with an overview of MBE as a crystal growth technique. The discussion then turns to the deposition of semiconductor superlattices of GaAs by MBE; important factors that must be considered in the design of a MBE system such as flux uniformity, crucible volume, heat shielding, source baffling, and shutters; and control of stoichiometry deviation in MBE growth of compound semiconductors, along with the effects of such deviation on the electronic properties of the grown films. The following chapters focus on the use of MBE techniques for growth of IV-VI optoelectronic devices; for fabrication of integrated optical devices; and for the study of semiconductor surface and crystal physics. The final chapter examines a superlattice consisting of a periodic sequence of ultrathin p- and n-doped semiconductor layers, possibly with intrinsic layers in between. This monograph will be of interest to chemists, physicists, and crystallographers.
Book Synopsis Molecular Beam Epitaxy by : Mohamed Henini
Download or read book Molecular Beam Epitaxy written by Mohamed Henini and published by Elsevier. This book was released on 2018-06-27 with total page 790 pages. Available in PDF, EPUB and Kindle. Book excerpt: Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and ‘how to’ on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. Condenses the fundamental science of MBE into a modern reference, speeding up literature review Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community
Book Synopsis Molecular Beam Epitaxy and Heterostructures by : L.L. Chang
Download or read book Molecular Beam Epitaxy and Heterostructures written by L.L. Chang and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 718 pages. Available in PDF, EPUB and Kindle. Book excerpt: The NATO Advanced Study Institute on "Molecular Beam Epitaxy (MBE) and Heterostructures" was held at the Ettore Majorana Center for Scientific Culture, Erice, Italy, on March 7-19, 1983, the second course of the International School of Solid-State Device Re search. This volume contains the lectures presented at the Institute. Throughout the history of semiconductor development, the coupling between processing techniques and device structures for both scientific investigations and technological applications has time and again been demonstrated. Newly conceived ideas usually demand the ultimate in existing techniques, which often leads to process innova tions. The emergence of a process, on the other hand, invariably creates opportunities for device improvement and invention. This intimate relationship between the two has most recently been witnessed in MBE and heterostructures, the subject of this Institute. This volume is divided into several sections. Chapter 1 serves as an introduction by providing a perspective of the subject. This is followed by two sections, each containing four chapters, Chapters 2-5 addressing the principles of the MBE process and Chapters 6-9 describ ing its use in the growth of a variety of semiconductors and heteros tructures. The next two sections, Chapters to-II and Chapters 12-15, treat the theory and the electronic properties of the heterostructures, respectively. The focus is on energy quantization of the two dimensional electron system. Chapters 16-17 are devoted to device structures, including both field-effect transistors and lasers and detec tors.
Book Synopsis Molecular Beam Epitaxy by : Marian A. Herman
Download or read book Molecular Beam Epitaxy written by Marian A. Herman and published by Springer Science & Business Media. This book was released on 2013-03-08 with total page 394 pages. Available in PDF, EPUB and Kindle. Book excerpt: This first-ever monograph on molecular beam epitaxy (MBE) gives a comprehensive presentation of recent developments in MBE, as applied to crystallization of thin films and device structures of different semiconductor materials. MBE is a high-vacuum technology characterized by relatively low growth temperature, ability to cease or initiate growth abruptly, smoothing of grown surfaces and interfaces on an atomic scale, and the unique facility for in situ analysis of the structural parameters of the growing film. The excellent exploitation parameters of such MBE-produced devices as quantum-well lasers, high electron mobility transistors, and superlattice avalanche photodiodes have caused this technology to be intensively developed. The main text of the book is divided into three parts. The first presents and discusses the more important problems concerning MBE equipment. The second discusses the physico-chemical aspects of the crystallization processes of different materials (mainly semiconductors) and device structures. The third part describes the characterization methods which link the physical properties of the grown film or structures with the technological parameters of the crystallization procedure. Latest achievements in the field are emphasized, such as solid source MBE, including silicon MBE, gas source MBE, especially metalorganic MBE, phase-locked epitaxy and atomic-layer epitaxy, photoassisted molecular layer epitaxy and migration enhanced epitaxy.
Book Synopsis Molecular Beam Epitaxy by : Robin F.C. Farrow
Download or read book Molecular Beam Epitaxy written by Robin F.C. Farrow and published by Elsevier. This book was released on 1995-12-31 with total page 795 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this volume, the editor and contributors describe the use of molecular beam epitaxy (MBE) for a range of key materials systems that are of interest for both technological and fundamental reasons. Prior books on MBE have provided an introduction to the basic concepts and techniques of MBE and emphasize growth and characterization of GaAs-based structures. The aim in this book is somewhat different; it is to demonstrate the versatility of the technique by showing how it can be utilized to prepare and explore a range of distinct and diverse materials. For each of these materials systems MBE has played a key role both in their development and application to devices.
Book Synopsis Molecular Beam Epitaxy Growth and Characterization of ZnO-based Layers and Heterostructures by : Abdelhamid Abdelrehim Mahmoud Elshaer
Download or read book Molecular Beam Epitaxy Growth and Characterization of ZnO-based Layers and Heterostructures written by Abdelhamid Abdelrehim Mahmoud Elshaer and published by Cuvillier Verlag. This book was released on 2008 with total page 143 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :North American Conference on Molecular Beam Epitaxy (16, 1997, Ann Arbor, Mich.) Publisher : ISBN 13 :9781563968211 Total Pages :264 pages Book Rating :4.9/5 (682 download)
Book Synopsis Papers from the 16th North American Conference on Molecular Beam Epitaxy by : North American Conference on Molecular Beam Epitaxy (16, 1997, Ann Arbor, Mich.)
Download or read book Papers from the 16th North American Conference on Molecular Beam Epitaxy written by North American Conference on Molecular Beam Epitaxy (16, 1997, Ann Arbor, Mich.) and published by . This book was released on 1998 with total page 264 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis High Performance Indium Phosphide Based Electronic Devices Grown by Chemical Beam Epitaxy by : Gordon Orvis Munns
Download or read book High Performance Indium Phosphide Based Electronic Devices Grown by Chemical Beam Epitaxy written by Gordon Orvis Munns and published by . This book was released on 1996 with total page 388 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Materials Fundamentals of Molecular Beam Epitaxy by : Jeffrey Y. Tsao
Download or read book Materials Fundamentals of Molecular Beam Epitaxy written by Jeffrey Y. Tsao and published by Academic Press. This book was released on 2012-12-02 with total page 324 pages. Available in PDF, EPUB and Kindle. Book excerpt: The technology of crystal growth has advanced enormously during the past two decades. Among, these advances, the development and refinement of molecular beam epitaxy (MBE) has been among the msot important. Crystals grown by MBE are more precisely controlled than those grown by any other method, and today they form the basis for the most advanced device structures in solid-state physics, electronics, and optoelectronics. As an example, Figure 0.1 shows a vertical-cavity surface emitting laser structure grown by MBE. * Provides comprehensive treatment of the basic materials and surface science principles that apply to molecular beam epitaxy * Thorough enough to benefit molecular beam epitaxy researchers * Broad enough to benefit materials, surface, and device researchers * Referenes articles at the forefront of modern research as well as those of historical interest
Book Synopsis Proceedings of the Symposium on III-V Opto-Electronics Epitaxy and Device Related Processes by : V. G. Keramidas
Download or read book Proceedings of the Symposium on III-V Opto-Electronics Epitaxy and Device Related Processes written by V. G. Keramidas and published by . This book was released on 1983 with total page 314 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis THE APPLICATION OF CHEMICAL BEAM EPITAXY TO INDIUM PHOSPHIDE BASED MATERIALS AND DEVICES (INDIUM PHOSPHIDE). by : MARC EISENZWEIG SHERWIN
Download or read book THE APPLICATION OF CHEMICAL BEAM EPITAXY TO INDIUM PHOSPHIDE BASED MATERIALS AND DEVICES (INDIUM PHOSPHIDE). written by MARC EISENZWEIG SHERWIN and published by . This book was released on 1992 with total page 400 pages. Available in PDF, EPUB and Kindle. Book excerpt: TriMethylAmine Alane (TMAA), showed acceptable levels of carbon and oxygen, validating the usefulness of the novel TMAA precursor.
Book Synopsis Silicon Molecular Beam Epitaxy by : Erich Kasper
Download or read book Silicon Molecular Beam Epitaxy written by Erich Kasper and published by . This book was released on 1989 with total page 388 pages. Available in PDF, EPUB and Kindle. Book excerpt: This two-volume work covers recent developments in the single crystal growth, by molecular beam epitaxy, of materials compatible with silicon, their physical characterization, and device application. Papers are included on surface physics and related vacuum synthesis techniques such as solid phase epitaxy and ion beam epitaxy. A selection of contents: Volume I. SiGe Superlattices. SiGe strained layer superlattices (G. Abstreiter). Optical properties of strained GeSi superlattices grown on (001)Ge (T.P. Pearsall et al.). Growth and characterization of SiGe atomic layer superlattices (J.-M. Baribeau et al.). Optical properties of perfect and imperfect SiGe superlattices (K.B. Wong et al.). Confined phonons in stained short-period (001) Si/Ge superlattices (W. Bacsa et al.). Calculation of energies and Raman intensities of confined phonons in SiGe strained layer superlattices (J. White et al.). Rippled surface topography observed on silicon molecular beam epitaxial and vapour phase epitaxial layers (A.J. Pidduck et al.). The 698 meV optical band in MBE silicon (N. de Mello et al.). Silicon Growth Doping. Dopant incorporation kinetics and abrupt profiles during silicon molecular beam epitaxy (J.-E. Sundgren et al.). Influence of substrate orientation on surface segregation process in silicon-MBE (K. Nakagawa et al.). Growth and transport properties of SimSb1 (H. Jorke, H. Kibbel). Author Index. Volume. II. In-situ electron microscope studies of lattice mismatch relaxation in GexSi1-x/Si heterostructures (R. Hull et al.). Heterogeneous nucleation sources in molecular beam epitaxy-grown GexSi1-x/Si strained layer superlattices (D.D. Perovic et al.). Silicon Growth. Hydrogen-terminated silicon substrates for low-temperature molecular beam epitaxy (P.J. Grunthaner et al.). Interaction of structure with kinetics in Si(001) homoepitaxy (S. Clarke et al.). Surface step structure of a lens-shaped Si(001) vicinal substrate (K. Sakamoto et al.). Photoluminescence characterization of molecular beam epitaxial silicon (E.C. Lightowlers et al.). Doping. Boron doping using compound source (T. Tatsumi). P-type delta doping in silicon MBE (N.L. Mattey et al.). Modulation-doped superlattices with delta layers in silicon (H.P. Zeindell et al.). Steep doping profiles obtained by low-energy implantation of arsenic in silicon MBE layers (N. Djebbar et al.). Alternative Growth Methods. Limited reaction processing: growth of Si/Si1-xGex for heterojunction bipolar transistor applications (J.L. Hoyt et al.). High gain SiGe heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition (M.L. Green et al.). Epitaxial growth of single-crystalline Si1-xGex on Si(100) by ion beam sputter deposition (F. Meyer et al.). Phosphorus gas doping in gas source silicon-MBE (H. Hirayama, T. Tatsumi). Devices. Narrow band gap base heterojunction bipolar transistors using SiGe alloys (S.S. Iyer et al.). Silicon-based millimeter-wave integrated circuits (J-F. Luy). Performance and processing line integration of a silicon molecular beam epitaxy system (A.A. van Gorkum et al.). Silicides. Reflection high energy electron diffraction study of Cosi2/Si multilayer structures (Q. Ye at al.). Epitaxy of metal silicides (H. von Kanel et al.). Epitaxial growth of ErSi2 on (111)si (D. Loretto et al.). Other Material Systems. Oxygen-doped and nitrogen-doped silicon films prepared by molecular beam epitaxy (M. Tabe et al.). Properties of diamond structure SnGe films grown by molecular beam epitaxy (A. Harwit et al.). Si-MBE: Prospects and Challenges. Prospects and challenges for molecular beam epitaxy in silicon very-large-scale integration (W. Eccleston). Prospects and challenges for SiGe strained-layer epitaxy (T.P. Pearsall). Author Index.
Book Synopsis Molecular Beam Epitaxy of III-V Compounds by : Klaus Ploog
Download or read book Molecular Beam Epitaxy of III-V Compounds written by Klaus Ploog and published by Springer. This book was released on 1984 with total page 240 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Metal Organic Vapour Phase Epitaxy for the Growth of III-V Semiconductor Structures by : Maarten Reinier Leys
Download or read book Metal Organic Vapour Phase Epitaxy for the Growth of III-V Semiconductor Structures written by Maarten Reinier Leys and published by . This book was released on 1990 with total page 172 pages. Available in PDF, EPUB and Kindle. Book excerpt:
