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Download Development Of High Speed Inp Gaassb Double Heterojunction Bipolar Transistor And Their Application In Monolithic Microwave Integrated Circuits full books in PDF, epub, and Kindle. Read online Development Of High Speed Inp Gaassb Double Heterojunction Bipolar Transistor And Their Application In Monolithic Microwave Integrated Circuits ebook anywhere anytime directly on your device. Fast Download speed and no annoying ads. We cannot guarantee that every ebooks is available!
Author :
Publisher :
ISBN 13 :
Total Pages : 2616 pages
Book Rating : 4.3/5 (91 download)
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2616 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 980 pages
Book Rating : 4.3/5 (243 download)
Download or read book Science Abstracts written by and published by . This book was released on 1993 with total page 980 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Michael S Shur
Publisher : World Scientific
ISBN 13 : 9814486302
Total Pages : 360 pages
Book Rating : 4.8/5 (144 download)
Download or read book Terahertz Sensing Technology - Vol 1: Electronic Devices And Advanced Systems Technology written by Michael S Shur and published by World Scientific. This book was released on 2003-07-14 with total page 360 pages. Available in PDF, EPUB and Kindle. Book excerpt: The last research frontier in high frequency electronics now lies in the so-called THz (or submillimeter-wave) regime between the traditional microwave and infrared domains. Significant scientific and technical challenges within the terahertz (THz) frequency regime have recently motivated an array of new research activities. During the last few years, major research programs have emerged that are focused on advancing the state of the art in THz frequency electronic technology and on investigating novel applications of THz frequency sensing. This book serves as a detailed reference for the new THz frequency technological advances that are emerging across a wide spectrum of sensing and technology areas.
Author : Dwight L. Woolard
Publisher : World Scientific
ISBN 13 : 9812383344
Total Pages : 360 pages
Book Rating : 4.8/5 (123 download)
Download or read book Terahertz Sensing Technology: Electronic devices and advanced systems technology written by Dwight L. Woolard and published by World Scientific. This book was released on 2003 with total page 360 pages. Available in PDF, EPUB and Kindle. Book excerpt: The last research frontier in high frequency electronics now lies in the so-called THz (or submillimeter-wave) regime between the traditional microwave and infrared domains. Significant scientific and technical challenges within the terahertz (THz) frequency regime have recently motivated an array of new research activities. During the last few years, major research programs have emerged that are focused on advancing the state of the art in THz frequency electronic technology and on investigating novel applications of THz frequency sensing. This book serves as a detailed reference for the new THz frequency technological advances that are emerging across a wide spectrum of sensing and technology areas.
Author : Sorin Voinigescu
Publisher : Cambridge University Press
ISBN 13 : 0521873029
Total Pages : 921 pages
Book Rating : 4.5/5 (218 download)
Download or read book High-Frequency Integrated Circuits written by Sorin Voinigescu and published by Cambridge University Press. This book was released on 2013-02-28 with total page 921 pages. Available in PDF, EPUB and Kindle. Book excerpt: A transistor-level, design-intensive overview of high speed and high frequency monolithic integrated circuits for wireless and broadband systems from 2 GHz to 200 GHz, this comprehensive text covers high-speed, RF, mm-wave, and optical fibre circuits using nanoscale CMOS, SiGe BiCMOS, and III-V technologies. Step-by-step design methodologies, end-of chapter problems, and practical simulation and design projects are provided, making this an ideal resource for senior undergraduate and graduate courses in circuit design. With an emphasis on device-circuit topology interaction and optimization, it gives circuit designers and students alike an in-depth understanding of device structures and process limitations affecting circuit performance.
Author : Albert G. Baca
Publisher : IET
ISBN 13 : 9780863413537
Total Pages : 372 pages
Book Rating : 4.4/5 (135 download)
Download or read book Fabrication of GaAs Devices written by Albert G. Baca and published by IET. This book was released on 2005-09 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides fundamental and practical information on all aspects of GaAs processing and gives pragmatic advice on cleaning and passivation, wet and dry etching and photolithography. Other topics covered include device performance for HBTs (Heterojunction Bipolar Transistors) and FETs (Field Effect Transistors), how these relate to processing choices, and special processing issues such as wet oxidation, which are especially important in optoelectronic devices. This book is suitable for both new and practising engineers.
Author :
Publisher : Institution of Electrical Engineers
ISBN 13 :
Total Pages : 528 pages
Book Rating : 4.3/5 (91 download)
Download or read book Properties of Indium Phosphide written by and published by Institution of Electrical Engineers. This book was released on 1991 with total page 528 pages. Available in PDF, EPUB and Kindle. Book excerpt: Invaluble to those studying or exploiting Indium Phosphide, which can provide tunable light sources at wavelengths which undergo minimum attenuation in fiber optic cables.
Author : Stuart Irvine
Publisher : John Wiley & Sons
ISBN 13 : 1119313015
Total Pages : 582 pages
Book Rating : 4.1/5 (193 download)
Download or read book Metalorganic Vapor Phase Epitaxy (MOVPE) written by Stuart Irvine and published by John Wiley & Sons. This book was released on 2019-10-07 with total page 582 pages. Available in PDF, EPUB and Kindle. Book excerpt: Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).
Author : D. Nirmal
Publisher : CRC Press
ISBN 13 : 0429862520
Total Pages : 434 pages
Book Rating : 4.4/5 (298 download)
Download or read book Handbook for III-V High Electron Mobility Transistor Technologies written by D. Nirmal and published by CRC Press. This book was released on 2019-05-14 with total page 434 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots
Author : Institute of Electrical and Electronics Engineers
Publisher :
ISBN 13 :
Total Pages : 848 pages
Book Rating : 4.3/5 (91 download)
Download or read book Index to IEEE Publications written by Institute of Electrical and Electronics Engineers and published by . This book was released on 1990 with total page 848 pages. Available in PDF, EPUB and Kindle. Book excerpt: Issues for 1973- cover the entire IEEE technical literature.
Author : Kevin F. Brennan
Publisher : Wiley-Interscience
ISBN 13 :
Total Pages : 472 pages
Book Rating : 4.3/5 (91 download)
Download or read book Theory of Modern Electronic Semiconductor Devices written by Kevin F. Brennan and published by Wiley-Interscience. This book was released on 2002-03-07 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: A thorough examination of the present and future of semiconductor device technology Engineers continue to develop new electronic semiconductor devices that are almost exponentially smaller, faster, and more efficient than their immediate predecessors. Theory of Modern Electronic Semiconductor Devices endeavors to provide an up-to-date, extended discussion of the most important emerging devices and trends in semiconductor technology, setting the pace for the next generation of the discipline's literature. Kevin Brennan and April Brown focus on three increasingly important areas: telecommunications, quantum structures, and challenges and alternatives to CMOS technology. Specifically, the text examines the behavior of heterostructure devices for communications systems, quantum phenomena that appear in miniaturized structures and new nanoelectronic device types that exploit these effects, the challenges faced by continued miniaturization of CMOS devices, and futuristic alternatives. Device structures on the commercial and research levels analyzed in detail include: * Heterostructure field effect transistors * Bipolar and CMOS transistors * Resonant tunneling diodes * Real space transfer transistors * Quantum dot cellular automata * Single electron transistors The book contains many homework exercises at the end of each chapter, and a solution manual can be obtained for instructors. Emphasizing the development of new technology, Theory of Modern Electronic Semiconductor Devices is an ideal companion to electrical and computer engineering graduate level courses and an essential reference for semiconductor device engineers.
Author : Mohamed Henini
Publisher : Elsevier
ISBN 13 : 0080455999
Total Pages : 648 pages
Book Rating : 4.0/5 (84 download)
Download or read book Dilute Nitride Semiconductors written by Mohamed Henini and published by Elsevier. This book was released on 2004-12-15 with total page 648 pages. Available in PDF, EPUB and Kindle. Book excerpt: - This book contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field. - It gives the reader easier access and better evaluation of future trends, Conveying important results and current ideas. - Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community. The high speed lasers operating at wavelength of 1.3 μm and 1.55 μm are very important light sources in optical communications since the optical fiber used as a transport media of light has dispersion and attenuation minima, respectively, at these wavelengths. These long wavelengths are exclusively made of InP-based material InGaAsP/InP. However, there are several problems with this material system. Therefore, there has been considerable effort for many years to fabricate long wavelength laser structures on other substrates, especially GaAs. The manufacturing costs of GaAs-based components are lower and the processing techniques are well developed. In 1996 a novel quaternary material GaInAsN was proposed which could avoid several problems with the existing technology of long wavelength lasers. In this book, several leaders in the field of dilute nitrides will cover the growth and processing, experimental characterization, theoretical understanding, and device design and fabrication of this recently developed class of semiconductor alloys. They will review their current status of research and development. Dilute Nitrides (III-N-V) Semiconductors: Physics and Technology organises the most current available data, providing a ready source of information on a wide range of topics, making this book essential reading for all post graduate students, researchers and practitioners in the fields of Semiconductors and Optoelectronics - Contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field - Gives the reader easier access and better evaluation of future trends, conveying important results and current ideas - Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community
Author : Lining Zhang
Publisher : Springer
ISBN 13 : 3319316532
Total Pages : 217 pages
Book Rating : 4.3/5 (193 download)
Download or read book Tunneling Field Effect Transistor Technology written by Lining Zhang and published by Springer. This book was released on 2016-04-09 with total page 217 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs). Readers will learn the TFETs physics from advanced atomistic simulations, the TFETs fabrication process and the important roles that TFETs will play in enabling integrated circuit designs for power efficiency.
Author : Norbert Grote
Publisher : Springer Science & Business Media
ISBN 13 : 9783540669777
Total Pages : 496 pages
Book Rating : 4.6/5 (697 download)
Download or read book Fibre Optic Communication Devices written by Norbert Grote and published by Springer Science & Business Media. This book was released on 2001-01-26 with total page 496 pages. Available in PDF, EPUB and Kindle. Book excerpt: Optoelectronic devices and fibre optics are the basis of cutting-edge communication systems. This monograph deals with the various components of these systems, including lasers, amplifiers, modulators, converters, filters, sensors, and more.
Author : Urs Hammer
Publisher :
ISBN 13 : 9783866283015
Total Pages : 265 pages
Book Rating : 4.2/5 (83 download)
Download or read book Sub-micron InP/GaAsSb/InP Double Heterojunction Bipolar Transistors for Ultra High-speed Digital Integrated Circuits written by Urs Hammer and published by . This book was released on 2010 with total page 265 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : IEEE Staff
Publisher :
ISBN 13 : 9781538617960
Total Pages : pages
Book Rating : 4.6/5 (179 download)
Download or read book 2021 IEEE International Workshop of Electronics, Control, Measurement, Signals and Their Application to Mechatronics (ECMSM) written by IEEE Staff and published by . This book was released on 2021-06-21 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Computer Engineering, Electronics, Information Sciences and Mechanical Engineering are the essential disciplines in Mechatronics and Robotics leading to powerful, compact and ever smarter systems Their evolution relies on progress in all these complementary scientific and technological fields This workshop provides an international forum for the exchange of ideas, discussions on research results and the presentation of theoretical and practical applications in these domains This workshop is a meeting plateform between the complementary technical and scientific fields required in mechatronic and robotic systems It brings together the actors in integrated circuits , computer sciences , signal processing and mechatronic systems in order to get to know the recent development in each domain
Author : Vassil Palankovski
Publisher : Springer Science & Business Media
ISBN 13 : 3709105609
Total Pages : 309 pages
Book Rating : 4.7/5 (91 download)
Download or read book Analysis and Simulation of Heterostructure Devices written by Vassil Palankovski and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 309 pages. Available in PDF, EPUB and Kindle. Book excerpt: The topic of this monograph is the physical modeling of heterostructure devices. A detailed discussion of physical models and parameters for compound semiconductors is presented including the relevant aspects of modern submicron heterostructure devices. More than 25 simulation examples for different types of Si(Ge)-based, GaAs-based, InP-based, and GaN-based heterostructure bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) are given in comparison with experimental data from state-of-the-art devices.
