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Design Fabrication And Characterization Of Gallium Nitride High Electron Mobility Transistors
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Book Synopsis Design, Fabrication and Characterization of Gallium Nitride High-electron-mobility Transistors by : Jonathan George Felbinger
Download or read book Design, Fabrication and Characterization of Gallium Nitride High-electron-mobility Transistors written by Jonathan George Felbinger and published by . This book was released on 2010 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Over the past few years, systems based on gallium nitride high-electron-mobility transistors (GaN HEMTs) have increasingly penetrated the markets for cellular telephone base stations, RADAR, and satellite communications. High power (several W/mm), continuous-wave (CW) operation of microwave HEMTs dissipates heat; as the device increases in temperature, its electron mobility drops and performance degrades. To enhance high-power performance and enable operation in high ambient temperature environments, the AlxGa1[-]xN/GaN epitaxial layers are attached to polycrystalline diamond substrates. e lower surface temperature rise on GaN-on- diamond is directly measured; subsequently, improved electrical performance is demonstrated on diamond versus the native (Si) substrates. Benchmark AlxGa1[-]xN/GaN devices are fabricated on SiC for comparison to diamond, Si, and bulk GaN substrates; the merits and performance of each is compared. In collaboration with Group4 Labs, X-band amplifier modules based on GaN-on-diamond HEMTs have been demonstrated for the first time. Recent efforts have focused on substituting AlxIn1[-]xN barriers in place of AlxGa1[-]xN to achieve higher output power at microwave frequencies and addressing the challenges of this new material system. Ultimately, these techniques may be combined to attain the utmost in device performance.
Book Synopsis Fabrication and Characterization of Gallium Nitride High Electron Mobility Transistors by : Wendi Zhou
Download or read book Fabrication and Characterization of Gallium Nitride High Electron Mobility Transistors written by Wendi Zhou and published by . This book was released on 2013 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: "Compound semiconductor gallium nitride high electron mobility transistors (HEMTs) have significant potential for use in the electronics industry, including radar applications and microwave transmitters for communications. These wide band gap semiconductors have unique material properties that lead to devices with high power, efficiency, and bandwidth compared with existing technologies. In this work, the electrical properties of gallium nitride HEMTs on silicon substrates were studied in the context of drain characteristics and breakdown voltage. The design, fabrication, and characterization of different devices are presented, in addition to a discussion on the effects of annealing and different gate contact materials. While demonstrating considerable promise in the field of high power radio frequency (RF) applications, this technology is yet immature and several fabrication issues still need to be addressed. The goal of this work is to represent a stepping stone in further developing this technology to be used in high power devices." --
Book Synopsis Design, Fabrication and Characterization of GaN-based Devices for Power Applications by : Burcu Ercan
Download or read book Design, Fabrication and Characterization of GaN-based Devices for Power Applications written by Burcu Ercan and published by . This book was released on 2020 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium Nitride (GaN) and related alloys have gained considerable momentum in recent years since the improvement in silicon (Si) based power devices is now only incremental. GaN is a promising material for high-power, high-frequency applications due to its wide bandgap, high carrier mobility which result in devices with high breakdown voltage, low on-resistance, and high temperature stability. Despite the superior properties of GaN there is still room for improvement in device design and fabrication to reach theoretical limits of GaN based devices. Reaching the theoretical critical electric field in GaN devices has been challenging due to the presence of threading dislocations, surface impurities introduced during material growth and fabrication process. In order to prevent premature breakdown of the devices, these defects must be mitigated. In this study, avalanche breakdown was observed in p-n diodes fabricated with low power reactive ion etch with a moat etch profile, followed by Mg ion implantation to passivate the plasma damages. Additionally, the devices were fabricated on free standing GaN substrates which has lower dislocation than sapphire or SiC substrates. The electron and hole impact ionization coefficients were extracted separately by analyzing the ultraviolet (UV) assisted reverse bias current voltage measurements of vertical p-n and n-p diodes. GaN and related alloy such as Indium Aluminum Nitride (InAlN) or Aluminum Gallium Nitride (AlGaN) form a high mobility, high density sheet charge at the heterojunction. High electron mobility transistor (HEMT) devices fabricated on these layer stacks are depletion mode (normally-on) devices with a negative threshold voltage. However, normally-on devices are not preferred in power applications due to safety reasons and to reduce the external circuitry. Therefore, the development of an enhancement mode (normally-off) GaN based high electron mobility transistors (HEMT) with positive threshold voltage is important for next generation power devices. Several methods, such as growing a p-GaN on the barrier layer, recessed gate by dry etching, plasma treatment under the gate have been previously studied to develop enhancement-mode HEMT devices. In this study, MOS-HEMT devices were fabricated by selective thermal oxidation of InAlN to reduce InAlN barrier thickness under the gate contact. The thermal oxidation of InAlN occurs at temperatures above 600°C, while GaN oxidation occurs above 1000°C at a slow rate which allows the decrease of the InAlN barrier layer thickness under the gate in a reliable way due to the self-limiting nature of oxidation. A positive shift in the threshold voltage and a reduction in reverse leakage current was demonstrated on MOS-diode structures by thermally oxidizing InAlN layers with In composition of 0.17, 0.178 and 0.255 for increasing oxidation durations at 700°C and 800°C. Enhancement mode device operation was demonstrated on lattice matched InAlN/AlN/GaN/Sapphire MOS-HEMT devices by selective thermal oxidation of InAlN layer under the gate contact. A positive threshold voltage was observed for devices which were subjected to thermal oxidation at 700°C for 10, 30 and 60 minutes. The highest threshold voltage was observed as 1.16 V for the device that was oxidized for 30 minutes at 700°C. The maximum transconductance and the maximum drain saturation current of this device was 4.27 mS/mm and 150 mA/mm, respectively.
Book Synopsis Fabrication and Electrical Measurements of Gallium Nitride High Electron Mobility Transistors by : Yi Fan Qi
Download or read book Fabrication and Electrical Measurements of Gallium Nitride High Electron Mobility Transistors written by Yi Fan Qi and published by . This book was released on 2014 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: "Gallium nitride (GaN) high electron mobility transistors (HEMTs) have a potential in electronic fields such as broadband communication and radar applications. GaN possesses many advantages including a direct and wide bandgap, making GaN HEMTs ideal to high voltage and high temperature. Experiments have yielded devices with high power output efficiency and bandwidth compared to other modern transistor devices. In this work, GaN HEMTs on silicon substrates with various gate lengths have been designed and fabricated. The current-voltage characteristics and breakdown voltages of the HEMTs have been measured. The design, fabrication, and characterization of different devices were presented, as well as the measurements and discussion of devices under effects of heat treatment. Although the fabrication technology is still immature and under development, GaN HEMTs have shown promising results in radio frequency, high power, and wireless power transfer applications. The goal of this work is to investigate the electrical properties of the GaN HEMTs and to develop this technology in high power devices in the future." --
Book Synopsis Design, Fabrication, and Characterzation of Gallium Nitride High Power Rectifiers by : Kwang Hyeon Baik
Download or read book Design, Fabrication, and Characterzation of Gallium Nitride High Power Rectifiers written by Kwang Hyeon Baik and published by . This book was released on 2004 with total page 176 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Fabrication and Characterization of Aluminum Gallium Nitride/gallium Nitride High Electron Mobility Transistors by : Vinayak Tilak
Download or read book Fabrication and Characterization of Aluminum Gallium Nitride/gallium Nitride High Electron Mobility Transistors written by Vinayak Tilak and published by . This book was released on 2002 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Design Fabrication and Characterization of Undoped AIGaN/GaN Based High Electron Mobility Transistor by : H. Sivanesswara Naidu
Download or read book Design Fabrication and Characterization of Undoped AIGaN/GaN Based High Electron Mobility Transistor written by H. Sivanesswara Naidu and published by . This book was released on 2009 with total page 87 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Gallium Nitride High Electron Mobility Transistors on Native Substrates for Power Switching Applications by : Muhammad Alshahed
Download or read book Gallium Nitride High Electron Mobility Transistors on Native Substrates for Power Switching Applications written by Muhammad Alshahed and published by . This book was released on 2019 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Fabrication and Characterization of Gallium Nitride Based High Electron Mobility Transistors for Mm-wave Applications by : Benjamin Simon Strang
Download or read book Fabrication and Characterization of Gallium Nitride Based High Electron Mobility Transistors for Mm-wave Applications written by Benjamin Simon Strang and published by . This book was released on 2012 with total page 176 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Fabrication and Characterization of AIGaN/GaN High Electron Mobility Transistors by : Peter Javorka
Download or read book Fabrication and Characterization of AIGaN/GaN High Electron Mobility Transistors written by Peter Javorka and published by . This book was released on 2004 with total page 244 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Fabrication and Characterization of AlGaN/GaN High Electron Mobility Transistors by : Peter Javorka
Download or read book Fabrication and Characterization of AlGaN/GaN High Electron Mobility Transistors written by Peter Javorka and published by . This book was released on 2004 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Gallium Nitride (GaN) by : Farid Medjdoub
Download or read book Gallium Nitride (GaN) written by Farid Medjdoub and published by CRC Press. This book was released on 2017-12-19 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt: Addresses a Growing Need for High-Power and High-Frequency Transistors Gallium Nitride (GaN): Physics, Devices, and Technology offers a balanced perspective on the state of the art in gallium nitride technology. A semiconductor commonly used in bright light-emitting diodes, GaN can serve as a great alternative to existing devices used in microelectronics. It has a wide band gap and high electron mobility that gives it special properties for applications in optoelectronic, high-power, and high-frequency devices, and because of its high off-state breakdown strength combined with excellent on-state channel conductivity, GaN is an ideal candidate for switching power transistors. Explores Recent Progress in High-Frequency GaN Technology Written by a panel of academic and industry experts from around the globe, this book reviews the advantages of GaN-based material systems suitable for high-frequency, high-power applications. It provides an overview of the semiconductor environment, outlines the fundamental device physics of GaN, and describes GaN materials and device structures that are needed for the next stage of microelectronics and optoelectronics. The book details the development of radio frequency (RF) semiconductor devices and circuits, considers the current challenges that the industry now faces, and examines future trends. In addition, the authors: Propose a design in which multiple LED stacks can be connected in a series using interband tunnel junction (TJ) interconnects Examine GaN technology while in its early stages of high-volume deployment in commercial and military products Consider the potential use of both sunlight and hydrogen as promising and prominent energy sources for this technology Introduce two unique methods, PEC oxidation and vapor cooling condensation methods, for the deposition of high-quality oxide layers A single-source reference for students and professionals, Gallium Nitride (GaN): Physics, Devices, and Technology provides an overall assessment of the semiconductor environment, discusses the potential use of GaN-based technology for RF semiconductor devices, and highlights the current and emerging applications of GaN.
Book Synopsis Advanced AlGaN/GaN HEMT Technology, Design, Fabrication and Characterization by : Abel Fontserè Recuenco
Download or read book Advanced AlGaN/GaN HEMT Technology, Design, Fabrication and Characterization written by Abel Fontserè Recuenco and published by . This book was released on 2014 with total page 240 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nowadays, the microelectronics technology is based on the mature and very well established silicon (Si) technology. However, Si exhibits some important limitations regarding its voltage blocking capability, operation temperature and switching frequency. In this sense, Gallium Nitride (GaN)-based high electron mobility transistors (HEMTs) devices have the potential to make this change possible. The unique combination of the high-breakdown field, the high-channel electron mobility of the two dimensional electron gas (2DEG), and high-temperature of operation has attracted enormous interest from social, academia and industry and in this context this PhD dissertation has been made. This thesis has focused on improving the device performance through the advanced design, fabrication and characterization of AlGaN/GaN HEMTs, primarily grown on Si templates. The first milestone of this PhD dissertation has been the establishment of a know-how on GaN HEMT technology from several points of view: the device design, the device modeling, the process fabrication and the advanced characterization primarily using devices fabricated at Centre de Recherche sur l'Hétéro-Epitaxie (CRHEA-CNRS) (France) in the framework of a collaborative project. In this project, the main workhorse of this dissertation was the explorative analysis performed on the AlGaN/GaN HEMTs by innovative electrical and physical characterization methods. A relevant objective of this thesis was also to merge the nanotechnology approach with the conventional characterization techniques at the device scale to understand the device performance. A number of physical characterization techniques have been imaginatively used during this PhD determine the main physical parameters of our devices such as the morphology, the composition, the threading dislocations density, the nanoscale conductive pattern and others. The conductive atomic force microscopy (CAFM) tool have been widely described and used to understand the conduction mechanisms through the AlGaN/GaN Ohmic contact by performing simultaneously topography and electrical conductivity measurements. As it occurs with the most of the electronic switches, the gate stack is maybe the critical part of the device in terms of performance and longtime reliability. For this reason, how the AlGaN/GaN HEMT gate contact affects the overall HEMT behaviour by means of advanced characterization and modeling has been intensively investigated. It is worth mentioning that the high-temperature characterization is also a cornerstone of this PhD. It has been reported the elevated temperature impact on the forward and the reverse leakage currents for analogous Schottky gate HEMTs grown on different substrates: Si, sapphire and free-standing GaN (FS-GaN). The HEMT' forward-current temperature coefficients (T̂a) as well as the thermal activation energies have been determined in the range of 25-300 oC. Besides, the impact of the elevated temperature on the Ohmic and gate contacts has also been investigated. The main results of the gold-free AlGaN/GaN HEMTs high-voltage devices fabricated with a 4 inch Si CMOS compatible technology at the clean room of the CNM in the framework of the industrial contract with ON semiconductor were presented. We have shown that the fabricated devices are in the state-of-the-art (gold-free Ohmic and Schottky contacts) taking into account their power device figure-of-merit ((VB̂2)/Ron) of 4.05×10̂8 W/cm̂2. Basically, two different families of AlGaN/GaN-on-Si MIS-HEMTs devices were fabricated on commercial 4 inch wafers: (i) using a thin ALD HfO2 (deposited on the CNM clean room) and (ii) thin in-situ grown Si3N4, as a gate insulator (grown by the vendor). The scientific impact of this PhD in terms of science indicators is of 17 journal papers (8 as first author) and 10 contributions at international conferences.
Book Synopsis Fabrication and Characterization of AlGaN/GaN High Electron Mobility Transistors by :
Download or read book Fabrication and Characterization of AlGaN/GaN High Electron Mobility Transistors written by and published by . This book was released on 2019 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Fabrication, Characterization, and Modeling of AlGaN/GaN High Electron Mobility Transistors by : Ekaterina Harvard
Download or read book Fabrication, Characterization, and Modeling of AlGaN/GaN High Electron Mobility Transistors written by Ekaterina Harvard and published by . This book was released on 2013 with total page 230 pages. Available in PDF, EPUB and Kindle. Book excerpt: Initially, advances in the high frequency markets were begun by work in Gallium Arsenide systems. In recent years, however, the focus has shifted to the promise of ever higher power at ever higher frequency with the emergence of wide bandgap group III-V semiconductors, including Gallium Nitride. One area receiving attention is that of novel passivation materials for the active areas of AlGaN/GaN devices. Passivation is a critical issue because surface trapping effects are essentially unavoidable, even with the highest queality epitaxial layers, due to the polarized nature of the material. The question then becomes, which passivation materials offer the best mitigation of surface trapping effects with the least impact on parasitic elements detrimental to device performance. In this work, AlGaN/GaN devices passivated with AlSiN for both high frequency and high power operation are studied. The high frequency devices were fabricated alongside devices passivated with SiN, a standard passivation material, and characterized for both small signal and large signal performance. The AlSiN passivation was found to enhance both small and large signal performance, and so another set of devices was fabricated with high voltage, high power switching as the intended application. These devices were characterized for off-state breakdown, which was more than 4 times that of typical SiN-passivated devices, and time-domain and loadline measurements were performed.
Book Synopsis Fabrication, Characterization, and Simulation of Gallium-Nitride Heterojunction Field-Effect Transistors by : Joseph Record
Download or read book Fabrication, Characterization, and Simulation of Gallium-Nitride Heterojunction Field-Effect Transistors written by Joseph Record and published by . This book was released on 2016 with total page 96 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis presents the fabrication, characterization, and off-state gate leakage simulation of Al x Ga 1−x N/GaN Heterojunction Field-Effect Transistors (HFETs). GaN HFETs are promising devices for high power, high frequency applications such as microwave amplifiers. This is due to the numerous benefits of the GaN material system including high electron mobility, breakdown field, saturation velocity, and thermal conductivity. This thesis is broken down into two major components. The first and most significant covers the fabrication and characterization of Al x Ga 1−x N/GaN HFETs. Devices were fabricated at McGill University’s Nanotools Microfabrication laboratory using a custom designed process flow. This process flow builds on previous work and presents Ohmic contact results of Ti/Al/Ti/Au and Ti/Al/Ti/Al/Ti/Au metalizations. A complete description of the process flow is provided including technology characterization results, such as mesa height profiling, where applicable. Electrical characterization of fabricated devices is performed. Results show an average contact resistance across temperature of 3.39Ωmm for the Ti/Al/Ti/Au metalization and 3.22Ωmm for the Ti/Al/Ti/Al/Ti/Au metalization. Full contact resistance results are provided over a wide range of temperature. The Ti-Al multi-layer metalization also outperforms the Ti/Al/Ti/Au metalization in terms of drain current density ( 0.12A/mm vs. 0.09A/mm ) and transconductance ( 60mS/mm vs. 40mS/mm ). Off-state gate leakage and current-voltage profiling are also carried out. The second part of this thesis concerns gate leakage current in Al x Ga 1−x N/GaN HFETs. A new off-state gate leakage model is presented to determine the variation in leakage mechanisms with the change in barrier layer aluminum mole fraction. A new metric of turning point is introduced to show where Fowler-Nordheim tunneling becomes the dominant leakage mechanism. Results show that as Al mole fraction is increased, the turning point becomes more negative and total gate leakage increases. Finally, improvements to the fabrication process and simulations are presented.
Book Synopsis Fabrication and Characterization of AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors for High Power Applications by : Anthony Calzolaro
Download or read book Fabrication and Characterization of AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors for High Power Applications written by Anthony Calzolaro and published by . This book was released on 2022 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
