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Author : Richard J. Brown
Publisher :
ISBN 13 :
Total Pages : 98 pages
Book Rating : 4.E/5 ( download)
Download or read book Design and Fabrication of GaN UV Light Emitting Diodes Grown on Silicon Nanostructures written by Richard J. Brown and published by . This book was released on 2005 with total page 98 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Jong-Hyun Ahn
Publisher : Springer Nature
ISBN 13 : 9811655057
Total Pages : 161 pages
Book Rating : 4.8/5 (116 download)
Download or read book Micro Light Emitting Diode: Fabrication and Devices written by Jong-Hyun Ahn and published by Springer Nature. This book was released on 2022-01-04 with total page 161 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focuses on basic fundamental and applied aspects of micro-LED, ranging from chip fabrication to transfer technology, panel integration, and various applications in fields ranging from optics to electronics to and biomedicine. The focus includes the most recent developments, including the uses in large large-area display, VR/AR display, and biomedical applications. The book is intended as a reference for advanced students and researchers with backgrounds in optoelectronics and display technology. Micro-LEDs are thin, light-emitting diodes, which have attracted considerable research interest in the last few years. They exhibit a set of exceptional properties and unique optical, electrical, and mechanical behaviors of fundamental interest, with the capability to support a range of important exciting applications that cannot be easily addressed with other technologies. The content is divided into two parts to make the book approachable to readers of various backgrounds and interests. The first provides a detailed description with fundamental materials and production approaches and assembly/manufacturing strategies designed to target readers who seek an understanding ofof essential materials and production approaches and assembly/manufacturing strategies designed to target readers who want to understand the foundational aspects. The second provides detailed, comprehensive coverage of the wide range of device applications that have been achieved. This second part targets readers who seek a detailed account of the various applications that are enabled by micro-LEDs.
Author : Paulo Ki
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (16 download)
Download or read book Fabrication and Characterization of GaN Grown on Silicon Vertical Structure Light Emitting Diodes written by Paulo Ki and published by . This book was released on 2016 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : 高健智
Publisher :
ISBN 13 :
Total Pages : 144 pages
Book Rating : 4.:/5 (776 download)
Download or read book Investigation and Fabrication of GaN-based Light-Emitting Diodes by Nanostructures and Patterned Sapphire Substrates written by 高健智 and published by . This book was released on 2011 with total page 144 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Xianghua Wang
Publisher :
ISBN 13 : 9781360990644
Total Pages : pages
Book Rating : 4.9/5 (96 download)
Download or read book Design and Laser Fabrication of Gan/Sapphire Light-Emitting Diodes written by Xianghua Wang and published by . This book was released on 2017-01-26 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 0 pages
Book Rating : 4.:/5 (137 download)
Download or read book Fabrication and Characterization of GaN-Based Light-Emitting Diodes Grown on Patterned Sapphire Substrates written by and published by . This book was released on 2006 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Tae-Yeon Seong
Publisher : Springer
ISBN 13 : 9811037558
Total Pages : 498 pages
Book Rating : 4.8/5 (11 download)
Download or read book III-Nitride Based Light Emitting Diodes and Applications written by Tae-Yeon Seong and published by Springer. This book was released on 2017-05-18 with total page 498 pages. Available in PDF, EPUB and Kindle. Book excerpt: The revised edition of this important book presents updated and expanded coverage of light emitting diodes (LEDs) based on heteroepitaxial GaN on Si substrates, and includes new chapters on tunnel junction LEDs, green/yellow LEDs, and ultraviolet LEDs. Over the last two decades, significant progress has been made in the growth, doping and processing technologies of III-nitride based semiconductors, leading to considerable expectations for nitride semiconductors across a wide range of applications. LEDs are already used in traffic signals, signage lighting, and automotive applications, with the ultimate goal of the global replacement of traditional incandescent and fluorescent lamps, thus reducing energy consumption and cutting down on carbon-dioxide emission. However, some critical issues must be addressed to allow the further improvements required for the large-scale realization of solid-state lighting, and this book aims to provide the readers with details of some contemporary issues on which the performance of LEDs is seriously dependent. Most importantly, it describes why there must be a breakthrough in the growth of high-quality nitride semiconductor epitaxial layers with a low density of dislocations, in particular, in the growth of Al-rich and In-rich GaN-based semiconductors. The quality of materials is directly dependent on the substrates used, such as sapphire and Si, and the book discusses these as well as topics such as efficiency droop, growth in different orientations, polarization, and chip processing and packaging technologies. Offering an overview of the state of the art in III-Nitride LED science and technology, the book will be a core reference for researchers and engineers involved with the developments of solid state lighting, and required reading for students entering the field.
Author : Zhe Chuan Feng
Publisher : World Scientific
ISBN 13 : 1848162235
Total Pages : 477 pages
Book Rating : 4.8/5 (481 download)
Download or read book III-nitride Devices and Nanoengineering written by Zhe Chuan Feng and published by World Scientific. This book was released on 2008 with total page 477 pages. Available in PDF, EPUB and Kindle. Book excerpt: Devices, nanoscale science and technologies based on GaN and related materials, have achieved great developments in recent years. New GaN-based devices such as UV detectors, fast p-HEMT and microwave devices are developed far more superior than other semiconductor materials-based devices.Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory and experiment.This book is an invaluable resource for device design and processing engineers, material growers and evaluators, postgraduates and scientists as well as newcomers in the GaN field.
Author : 曾旭峰
Publisher :
ISBN 13 :
Total Pages : 147 pages
Book Rating : 4.:/5 (899 download)
Download or read book Investigation and Fabrication of GaN-and AlGaInP-Based Light-emitting Diodes by Nanostructures written by 曾旭峰 and published by . This book was released on 2014 with total page 147 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : 陳健中
Publisher :
ISBN 13 :
Total Pages : 266 pages
Book Rating : 4.:/5 (71 download)
Download or read book Investigation and Fabrication of GaN- and AlGaInP-Based Light-Emitting Diodes Applying Nanostructures written by 陳健中 and published by . This book was released on 2010 with total page 266 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : 汪楷茗
Publisher :
ISBN 13 :
Total Pages : 106 pages
Book Rating : 4.:/5 (774 download)
Download or read book Design and Fabrication of High Efficiency GaN-Based Light-Emitting Diodes written by 汪楷茗 and published by . This book was released on 2006 with total page 106 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Jasper Sicat Cabalu
Publisher :
ISBN 13 :
Total Pages : 630 pages
Book Rating : 4.:/5 (166 download)
Download or read book Development of Gallium Nitride-based Ultraviolet and Visible Light-emitting Diodes Using Hydride Vapor-phase Epitaxy and Molecular Epitaxy written by Jasper Sicat Cabalu and published by . This book was released on 2006 with total page 630 pages. Available in PDF, EPUB and Kindle. Book excerpt: ABSTRACT: Much of the work done on ultraviolet (UV) and visible III-Nitrides-based light emitting diodes (LEDs) involves growth by metal-organic chemical vapor deposition (MOCVD). In this dissertation, the growth, development, and fabrication of III-Nitrides-based UV and visible LEDs with very high photon conversion and extraction efficiencies using hydride vapor-phase epitaxy (HVPE) and radio frequency (rf) plasma-assisted molecular beam epitaxy (PAMBE) is presented. High-power electrically-pumped UV-LEDs based on GaN/AlGaN multiple quantum wells (MQWs) emitting at 340 nm and 350 nm have been fabricated in a flip-chip configuration and evaluated. Under pulsed operation, UV-LEDs emitting at 340 nm have output powers that saturate, due to device heating, at approximately 3 mW. Devices emitting at 350 nm show DC operation output powers as high as 4.5 mW under 200 mA drive current. These results were found to be equivalent with those of UV-LEDs produced by the MOCVD and HVPE methods. The concept of using textured MQWs on UV-LED structures was tested by optical pumping of GaN/AlGaN MQWs grown on textured GaN templates. Results show highly enhanced (>700 times) blue-shifted photoluminescence (PL) at 360 nm compared to similarly produced MQWs on smooth GaN templates whose PL emission is red-shifted. These results are attributed partly to enhancement in light extraction efficiency (LEE) and partly to enhancement in internal quantum efficiency (IQE). The origin of the increase in IQE is partly due to reduction of the quantum-confined Stark effect (QCSE) on QW-planes not perpendicular to the polarization direction and partly due to charge redistribution in the QWs caused by the polarization component parallel to the planes of the QWs. Similar studies have been done for visible LEDs using InGaN/GaN MQWs. Growth of LED structures on textured GaN templates employing textured MQW-active regions resulted in the production of dichromatic (430 nm and 530 nm) phosphorless white LEDs with good electrical characteristics. We attribute this behavior to different incorporation of In in different QW-planes. These studies show that textured MQW-based LEDs not only offers the benefit of enhanced IQE and LEE, but also the benefit of producing efficient white LEDs without the use of phosphor.
Author : Jinmin Li
Publisher : Springer Nature
ISBN 13 : 9811579490
Total Pages : 295 pages
Book Rating : 4.8/5 (115 download)
Download or read book III-Nitrides Light Emitting Diodes: Technology and Applications written by Jinmin Li and published by Springer Nature. This book was released on 2020-08-31 with total page 295 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book provides an overview of III-nitride-material-based light-emitting diode (LED) technology, from the basic material physics to the latest advances in the field, such as homoepitaxy and heteroepitaxy of the materials on different substrates. It also includes the latest advances in the field, such as approaches to improve quantum efficiency and reliability as well as novel structured LEDs. It explores the concept of material growth, chip structure, packaging, reliability and application of LEDs. With spectra coverage from ultraviolet (UV) to entire visible light wavelength, the III-nitride-material-based LEDs have a broad application potential, and are not just limited to illumination. These novel applications, such as health & medical, visible light communications, fishery and horticulture, are also discussed in the book.
Author : Wengang (Wayne) Bi
Publisher : CRC Press
ISBN 13 : 1498747140
Total Pages : 709 pages
Book Rating : 4.4/5 (987 download)
Download or read book Handbook of GaN Semiconductor Materials and Devices written by Wengang (Wayne) Bi and published by CRC Press. This book was released on 2017-10-20 with total page 709 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book addresses material growth, device fabrication, device application, and commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and power electronics devices. It begins with an overview on basics of semiconductor materials, physics, growth and characterization techniques, followed by detailed discussion of advantages, drawbacks, design issues, processing, applications, and key challenges for state of the art GaN-based devices. It includes state of the art material synthesis techniques with an overview on growth technologies for emerging bulk or free standing GaN and AlN substrates and their applications in electronics, detection, sensing, optoelectronics and photonics. Wengang (Wayne) Bi is Distinguished Chair Professor and Associate Dean in the College of Information and Electrical Engineering at Hebei University of Technology in Tianjin, China. Hao-chung (Henry) Kuo is Distinguished Professor and Associate Director of the Photonics Center at National Chiao-Tung University, Hsin-Tsu, Taiwan, China. Pei-Cheng Ku is an associate professor in the Department of Electrical Engineering & Computer Science at the University of Michigan, Ann Arbor, USA. Bo Shen is the Cheung Kong Professor at Peking University in China.
Author : Jung Han
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (316 download)
Download or read book Nanostructured High Performance Ultraviolet and Blue Light Emitting Diodes for Solid State Lighting written by Jung Han and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: We report on research results in this project which synergize advanced material science approaches with fundamental optical physics concepts pertaining to light-matter interaction, with the goal of solving seminal problems for the development of very high performance light emitting diodes (LEDs) in the blue and near ultraviolet for Solid State Lighting applications. Accomplishments in the second 12 month contract period include (i) new means of synthesizing AlGaN and InN quantum dots by droplet heteroepitaxy, (ii) synthesis of AlGaInN nanowires as building blocks for GaN-based microcavity devices, (iii) progress towards direct epitaxial alignment of the dense arrays of nanowires, (iv) observation and measurements of stimulated emission in dense InGaN nanopost arrays, (v) design and fabrication of InGaN photonic crystal emitters, and (vi) observation and measurements of enhanced fluorescence from coupled quantum dot and plasmonic nanostructures. The body of results is presented in this report shows how a solid foundation has been laid, with several noticeable accomplishments, for innovative research, consistent with the stated milestones.
Download or read book Progress and Prospects of GaN-based LEDs Using Nanostructures*Project Supported by the National Natural Science Foundation of China (Grant No. 61334009), the National High Technology Research and Development Program of China (Grant Nos. 2015AA03A101 and 2014BAK02B08), China International Science and Technology Cooperation Program (Grant No. 2014DFG62280), the "Import Outstanding Technical Talent Plan" and "Youth Innovation Promotion Association Program" of the Chinese Academy of Sciences written by and published by . This book was released on 2015 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: Progress with GaN-based light emitting diodes (LEDs) that incorporate nanostructures is reviewed, especially the recent achievements in our research group. Nano-patterned sapphire substrates have been used to grow an AlN template layer for deep-ultraviolet (DUV) LEDs. One efficient surface nano-texturing technology, hemisphere-cones-hybrid nanostructures, was employed to enhance the extraction efficiency of InGaN flip-chip LEDs. Hexagonal nanopyramid GaN-based LEDs have been fabricated and show electrically driven color modification and phosphor-free white light emission because of the linearly increased quantum well width and indium incorporation from the shell to the core. Based on the nanostructures, we have also fabricated surface plasmon-enhanced nanoporous GaN-based green LEDs using AAO membrane as a mask. Benefitting from the strong lateral SP coupling as well as good electrical protection by a passivation layer, the EL intensity of an SP-enhanced nanoporous LED was significantly enhanced by 380%. Furthermore, nanostructures have been used for the growth of GaN LEDs on amorphous substrates, the fabrication of stretchable LEDs, and for increasing the 3-dB modulation bandwidth for visible light communication.
Author : Dipayan Datta Choudhary
Publisher :
ISBN 13 :
Total Pages : 69 pages
Book Rating : 4.:/5 (123 download)
Download or read book III-nitride Nanowire Light-emitting Diodes : Design and Characterization written by Dipayan Datta Choudhary and published by . This book was released on 2017 with total page 69 pages. Available in PDF, EPUB and Kindle. Book excerpt: III-nitride semiconductors have been intensively studied for optoelectronic devices, due to the superb advantages offered by this materials system. The direct energy bandgap III-nitride semiconductors can absorb or emit light efficiently over a broad spectrum, ranging from 0.65 eV (InN) to 6.4 eV (AlN), which encompasses from deep ultraviolet to near infrared spectrum. However, due to the lack of native substrates, conventional III-nitride planar heterostructures generally exhibit very high dislocation densities that severely limit the device performance and reliability. On the other hand, nanowire heterostructures can be grown on lattice mismatched substrates with drastically reduced dislocation densities, due to highly effective lateral stress relaxation. Nanowire light-emitting diodes (LEDs) with emission in the ultraviolet to visible wavelength range have recently been studied for applications in solid-state lighting, flat-panel displays, and solar-blind detectors. In this thesis, investigation of the systematic process flow of design and epitaxial growth of group III-nitride nanoscale heterostructures was done. Moreover, demonstration of phosphor-free nanowire white LEDs using InGaN/AlGaN nanowire heterostructures grown directly on Si(111) substrates by molecular beam epitaxy was made. Full-color emission across nearly the entire visible wavelength range was realized by controlling the In composition in the InGaN active region. Strong white-light emission was recorded for the unpackaged nanowire LEDs with an unprecedentedly high color rendering index of 98. Moreover, LEDs with the operating wavelengths in the ultraviolet (UV) spectra, with emission wavelength in the range of 280-320 nm (UV-B) or shorter wavelength hold tremendous promise for applications in phototherapy, skin treatments, high speed dissociation and high density optical recording. Current planar AlGaN based UV-B LEDs have relatively low quantum efficiency due to their high dislocation density resulted from the large lattice mismatch between the AlGaN and suitable substrates. In this study, associated with the achievement of visible LEDs, the development of high brightness AlGaN/GaN nanowire UV-LEDs via careful design and device fabrication was shown. Strong photoluminescence spectra were recorded from these UV-B LEDs. The emission peak can be tunable from 290 nm to 320 nm by varying the Al content in AlGaN active region which can be done by optimizing the growth condition including Al/Ga flux ratio and also the growth temperature. Such visible to UV-B nanowire LEDs are ideally suited for future smart lighting, full-color display, phototherapy and skin treatments applications.
