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Defects In Microelectronic Materials And Devices
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Book Synopsis Defects in Microelectronic Materials and Devices by : Daniel M. Fleetwood
Download or read book Defects in Microelectronic Materials and Devices written by Daniel M. Fleetwood and published by CRC Press. This book was released on 2008-11-19 with total page 772 pages. Available in PDF, EPUB and Kindle. Book excerpt: Uncover the Defects that Compromise Performance and ReliabilityAs microelectronics features and devices become smaller and more complex, it is critical that engineers and technologists completely understand how components can be damaged during the increasingly complicated fabrication processes required to produce them.A comprehensive survey of defe
Book Synopsis Microelectronic Materials and Processes by : R.A. Levy
Download or read book Microelectronic Materials and Processes written by R.A. Levy and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 992 pages. Available in PDF, EPUB and Kindle. Book excerpt: The primary thrust of very large scale integration (VLS!) is the miniaturization of devices to increase packing density, achieve higher speed, and consume lower power. The fabrication of integrated circuits containing in excess of four million components per chip with design rules in the submicron range has now been made possible by the introduction of innovative circuit designs and the development of new microelectronic materials and processes. This book addresses the latter challenge by assessing the current status of the science and technology associated with the production of VLSI silicon circuits. It represents the cumulative effort of experts from academia and industry who have come together to blend their expertise into a tutorial overview and cohesive update of this rapidly expanding field. A balance of fundamental and applied contributions cover the basics of microelectronics materials and process engineering. Subjects in materials science include silicon, silicides, resists, dielectrics, and interconnect metallization. Subjects in process engineering include crystal growth, epitaxy, oxidation, thin film deposition, fine-line lithography, dry etching, ion implantation, and diffusion. Other related topics such as process simulation, defects phenomena, and diagnostic techniques are also included. This book is the result of a NATO-sponsored Advanced Study Institute (AS!) held in Castelvecchio Pascoli, Italy. Invited speakers at this institute provided manuscripts which were edited, updated, and integrated with other contributions solicited from non-participants to this AS!.
Book Synopsis Reliability and Failure of Electronic Materials and Devices by : Milton Ohring
Download or read book Reliability and Failure of Electronic Materials and Devices written by Milton Ohring and published by Academic Press. This book was released on 2014-10-14 with total page 759 pages. Available in PDF, EPUB and Kindle. Book excerpt: Reliability and Failure of Electronic Materials and Devices is a well-established and well-regarded reference work offering unique, single-source coverage of most major topics related to the performance and failure of materials used in electronic devices and electronics packaging. With a focus on statistically predicting failure and product yields, this book can help the design engineer, manufacturing engineer, and quality control engineer all better understand the common mechanisms that lead to electronics materials failures, including dielectric breakdown, hot-electron effects, and radiation damage. This new edition adds cutting-edge knowledge gained both in research labs and on the manufacturing floor, with new sections on plastics and other new packaging materials, new testing procedures, and new coverage of MEMS devices. Covers all major types of electronics materials degradation and their causes, including dielectric breakdown, hot-electron effects, electrostatic discharge, corrosion, and failure of contacts and solder joints New updated sections on "failure physics," on mass transport-induced failure in copper and low-k dielectrics, and on reliability of lead-free/reduced-lead solder connections New chapter on testing procedures, sample handling and sample selection, and experimental design Coverage of new packaging materials, including plastics and composites
Book Synopsis Microelectronic Materials by : C.R.M. Grovenor
Download or read book Microelectronic Materials written by C.R.M. Grovenor and published by Routledge. This book was released on 2017-10-05 with total page 557 pages. Available in PDF, EPUB and Kindle. Book excerpt: This practical book shows how an understanding of structure, thermodynamics, and electrical properties can explain some of the choices of materials used in microelectronics, and can assist in the design of new materials for specific applications. It emphasizes the importance of the phase chemistry of semiconductor and metal systems for ensuring the long-term stability of new devices. The book discusses single-crystal and polycrystalline silicon, aluminium- and gold-based metallisation schemes, packaging semiconductor devices, failure analysis, and the suitability of various materials for optoelectronic devices and solar cells. It has been designed for senior undergraduates, graduates, and researchers in physics, electronic engineering, and materials science.
Book Synopsis Photo-induced Defects in Semiconductors by : David Redfield
Download or read book Photo-induced Defects in Semiconductors written by David Redfield and published by Cambridge University Press. This book was released on 2006-03-09 with total page 232 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book gives a complete overview of the properties of deep-level, localized defects in semiconductors. Such comparatively long-lived (or metastable) defects exhibit complex interactions with the surrounding material, and can significantly affect the performance and stability of certain semiconductor devices. After an introductory discussion of metastable defects, the authors present properties of DX and EL2 centers in IIISHV compounds. They also deal with additional crystalline materials before giving a detailed description of the properties and kinetics of photo-induced defects in amorphous semiconductors. The book closes with an examination of the effects of photo-induced defects in a range of practical applications. The book will be of great use to graduate students and researchers interested in the physics and materials science of semiconductors.
Book Synopsis Fundamentals of Silicon Carbide Technology by : Tsunenobu Kimoto
Download or read book Fundamentals of Silicon Carbide Technology written by Tsunenobu Kimoto and published by John Wiley & Sons. This book was released on 2014-09-23 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.
Book Synopsis Semiconductor Defect Engineering: Volume 864 by : S. Ashok
Download or read book Semiconductor Defect Engineering: Volume 864 written by S. Ashok and published by Cambridge University Press. This book was released on 2005-07-29 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book, first published in 2005, explores the deliberate introduction and manipulation of defects and impurities for the purpose of engineering desired properties in semiconductor materials and devices. The presentations are grouped around the distinct topics of materials, processing and devices. The papers on grown-in defects in bulk crystals deal with overviews of intrinsic and impurity-related defects and their influence on electrical, optical and mechanical properties, as well as the use of impurities to arrest certain types of defects during growth and defects to control growth. Most of the papers deal with dopant and defect issues relevant to widegap semiconductors. The scope of defect and impurity engineering is far-ranging, as exemplified by phase and morphological stability of silicides, interface control and passivation, and application of ion implantation, plasma treatment and rapid thermal processing for creating/activating/suppressing trap levels. Papers in these areas are also found in the book.
Book Synopsis Reliability and Failure of Electronic Materials and Devices by : Milton Ohring
Download or read book Reliability and Failure of Electronic Materials and Devices written by Milton Ohring and published by Elsevier. This book was released on 1998-06-12 with total page 715 pages. Available in PDF, EPUB and Kindle. Book excerpt: Suitable as a reference work for reliability professionals or as a text for advanced undergraduate or graduate students, this book introduces the reader to the widely dispersed reliability literature of microelectronic and electronic-optional devices. Reliability and Failure of Electronic Materials and Devices integrates a treatment of chip and packaging level failures within the context of the atomic mechanisms and models used to explain degradation, and the statistical handling of lifetime data. Electromigration, dielectric radiation damage and the mechanical failure of contacts and solder joints are among the failure mechanisms considered. An underlying thread of the book concerns product defects--their relation to yield and reliability, the role they play in failure, and the way they are experimentally exposed. The reader will gain a deeper physical understanding of failure mechanisms in electronic materials and devices, acquire skills in the mathematical handling of reliability data, and better appreciate future technology trends and the reliability issues they raise. Discusses reliability and failure on both the chip and packaging levels Handles the role of defects in yield and reliability Includes a tutorial chapter on the mathematics of reliability Focuses on electromigration, dielectric breakdown, hot-electron effects, electrostatic discharge, corrosion, radiation damage and the mechanical failure of packages, contacts, and solder joints Considers defect detection methods and failure analysis techniques
Book Synopsis Micro- and Nanoelectronics by : Tomasz Brozek
Download or read book Micro- and Nanoelectronics written by Tomasz Brozek and published by CRC Press. This book was released on 2017-12-19 with total page 388 pages. Available in PDF, EPUB and Kindle. Book excerpt: Micro- and Nanoelectronics: Emerging Device Challenges and Solutions presents a comprehensive overview of the current state of the art of micro- and nanoelectronics, covering the field from fundamental science and material properties to novel ways of making nanodevices. Containing contributions from experts in both industry and academia, this cutting-edge text: Discusses emerging silicon devices for CMOS technologies, fully depleted device architectures, characteristics, and scaling Explains the specifics of silicon compound devices (SiGe, SiC) and their unique properties Explores various options for post-CMOS nanoelectronics, such as spintronic devices and nanoionic switches Describes the latest developments in carbon nanotubes, iii-v devices structures, and more Micro- and Nanoelectronics: Emerging Device Challenges and Solutions provides an excellent representation of a complex engineering field, examining emerging materials and device architecture alternatives with the potential to shape the future of nanotechnology.
Book Synopsis Nano and Giga Challenges in Microelectronics by : J. Greer
Download or read book Nano and Giga Challenges in Microelectronics written by J. Greer and published by Elsevier. This book was released on 2003-10-24 with total page 264 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book is designed as an introduction for engineers and researchers wishing to obtain a fundamental knowledge and a snapshot in time of the cutting edge in technology research. As a natural consequence, Nano and Giga Challenges is also an essential reference for the "gurus" wishing to keep abreast of the latest directions and challenges in microelectronic technology development and future trends. The combination of viewpoints presented within the book can help to foster further research and cross-disciplinary interaction needed to surmount the barriers facing future generations of technology design. Key Features: • Quickly becoming the hottest topic of the new millennium (2.4 billion dollars funding in US alone • Current status and future trends of micro and nanoelectronics research • Written by leading experts in the corresponding research areas • Excellent tutorial for graduate students and reference for "gurus"
Book Synopsis Frontiers in Physics - 2019 Editor's Choice by : Alex Hansen
Download or read book Frontiers in Physics - 2019 Editor's Choice written by Alex Hansen and published by Frontiers Media SA. This book was released on 2020-05-19 with total page 186 pages. Available in PDF, EPUB and Kindle. Book excerpt: Frontiers in Physics – FPHY – is now in its eighth year. Up to last year, the journal received a slowly increasing trickle of manuscripts, and then during the summer… Boom! The number of manuscripts we receive started increasing exponentially. This is of course a signal to us who are associated with the journal that we are on the right track to build a first-rate journal spanning the entire field of physics. And it is not the only signal. We also see it in other indicators such as the number of views and downloads, Impact Factor and the Cite Score. Should we be surprised at this increase? If I were to describe FPHY in one word, it would be “innovation”. Attaching the names of the reviewers that have endorsed publication permanently to the published paper is certainly in this class. It ensures that the reviewers are accountable; furthermore, the level of transparency this implies ensures that any conflict of interest is detected at the very beginning of the process. The review process itself is innovative. After an initial review that proceeds traditionally, the reviewers and authors enter a back-and-forth dialog that irons out any misunderstanding. The reviewers retain their anonymity throughout the process. The entire review process and any question concerning editorial decisions is fully in the hands of active scientists. The Frontiers staff is not allowed to make any such decision. They oversee the process and make sure that the manuscript and the process leading to publication or rejection upholds the standard. FPHY is of course a gold open access journal. This is the only scientific publication model that is compatible with the information revolution. A journal’s prestige is traditionally associated with how difficult it is to publish there. Exclusivity as criterion for desirability, is a mechanism we know very well from the consumer market. However, is this criterion appropriate for scientific publishing? It is almost by definition not possible to predict the importance of a new idea – otherwise it would not have been new. So, why should journals make decisions on publishing based on predicting the possible importance of a given work. This can only be properly assessed after publication. Frontiers has removed “importance” from the list of criteria for publication. That the work is new, is another matter: the work must be new and scientifically correct. It would seem that removing the criterion of “importance” would be a risky one, but it turns out not to be. The Specialty Chief Editors who lead the 18 sections that constitute FPHY, have made this selection of papers published in FPHY in 2019. We have chosen the papers that we have found most striking. Even though this is far from a random selection, they do give a good idea of what PFHY is about. Enjoy! We certainly did while making this selection. Professor Alex Hansen (Field Chief Editor)
Book Synopsis Advanced Calculations for Defects in Materials by : Audrius Alkauskas
Download or read book Advanced Calculations for Defects in Materials written by Audrius Alkauskas and published by John Wiley & Sons. This book was released on 2011-05-16 with total page 374 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book investigates the possible ways of improvement by applying more sophisticated electronic structure methods as well as corrections and alternatives to the supercell model. In particular, the merits of hybrid and screened functionals, as well as of the +U methods are assessed in comparison to various perturbative and Quantum Monte Carlo many body theories. The inclusion of excitonic effects is also discussed by way of solving the Bethe-Salpeter equation or by using time-dependent DFT, based on GW or hybrid functional calculations. Particular attention is paid to overcome the side effects connected to finite size modeling. The editors are well known authorities in this field, and very knowledgeable of past developments as well as current advances. In turn, they have selected respected scientists as chapter authors to provide an expert view of the latest advances. The result is a clear overview of the connections and boundaries between these methods, as well as the broad criteria determining the choice between them for a given problem. Readers will find various correction schemes for the supercell model, a description of alternatives by applying embedding techniques, as well as algorithmic improvements allowing the treatment of an ever larger number of atoms at a high level of sophistication.
Book Synopsis Point and Extended Defects in Semiconductors by : Giorgio Benedek
Download or read book Point and Extended Defects in Semiconductors written by Giorgio Benedek and published by Springer Science & Business Media. This book was released on 2013-06-29 with total page 286 pages. Available in PDF, EPUB and Kindle. Book excerpt: The systematic study of defects in semiconductors began in the early fifties. FrQm that time on many questions about the defect structure and properties have been an swered, but many others are still a matter of investigation and discussion. Moreover, during these years new problems arose in connection with the identification and char acterization of defects, their role in determining transport and optical properties of semiconductor materials and devices, as well as from the technology of the ever in creasing scale of integration. This book presents to the reader a view into both basic concepts of defect physics and recent developments of high resolution experimental techniques. The book does not aim at an exhaustive presentation of modern defect physics; rather it gathers a number of topics which represent the present-time research in this field. The volume collects the contributions to the Advanced Research Workshop "Point, Extended and Surface Defects in Semiconductors" held at the Ettore Majo rana Centre at Erice (Italy) from 2 to 7 November 1988, in the framework of the International School of Materials Science and Technology. The workshop has brought together scientists from thirteen countries. Most participants are currently working on defect problems in either silicon submicron technology or in quantum wells and superlattices, where point defects, dislocations, interfaces and surfaces are closely packed together.
Book Synopsis Charged Semiconductor Defects by : Edmund G. Seebauer
Download or read book Charged Semiconductor Defects written by Edmund G. Seebauer and published by Springer Science & Business Media. This book was released on 2008-11-14 with total page 304 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of “defect engineering”. For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. “Charged Defects in Semiconductors” details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors. Features: group IV, III-V, and oxide semiconductors; intrinsic and extrinsic defects; and, point defects, as well as defect pairs, complexes and clusters.
Book Synopsis Photo-induced Defects in Semiconductors by : David Redfield
Download or read book Photo-induced Defects in Semiconductors written by David Redfield and published by Cambridge University Press. This book was released on 1996-01-26 with total page 231 pages. Available in PDF, EPUB and Kindle. Book excerpt: A thorough review of the properties of deep-level, localized defects in semiconductors.
Author :Victor A. Perevostchikov Publisher :Springer Science & Business Media ISBN 13 :3540294996 Total Pages :400 pages Book Rating :4.5/5 (42 download)
Book Synopsis Gettering Defects in Semiconductors by : Victor A. Perevostchikov
Download or read book Gettering Defects in Semiconductors written by Victor A. Perevostchikov and published by Springer Science & Business Media. This book was released on 2005-12-12 with total page 400 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gettering Defects in Semiconductors fulfills three basic purposes: – to systematize the experience and research in exploiting various gettering techniques in microelectronics and nanoelectronics; – to identify new directions in research, particularly to enhance the perspective of professionals and young researchers and specialists; – to fill a gap in the contemporary literature on the underlying semiconductor-material theory. The authors address not only well-established gettering techniques but also describe contemporary trends in gettering technologies from an international perspective. The types and properties of structural defects in semiconductors, their generating and their transforming mechanisms during fabrication are described. The primary emphasis is placed on classifying and describing specific gettering techniques, their specificity arising from both their position in a general technological process and the regimes of their application. This book addresses both engineers and material scientists interested in semiconducting materials theory and also undergraduate and graduate students in solid–state microelectronics and nanoelectronics. A comprehensive list of references provides readers with direction for further reading.
Book Synopsis Defects and Impurities in Silicon Materials by : Yutaka Yoshida
Download or read book Defects and Impurities in Silicon Materials written by Yutaka Yoshida and published by Springer. This book was released on 2016-03-30 with total page 498 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book emphasizes the importance of the fascinating atomistic insights into the defects and the impurities as well as the dynamic behaviors in silicon materials, which have become more directly accessible over the past 20 years. Such progress has been made possible by newly developed experimental methods, first principle theories, and computer simulation techniques. The book is aimed at young researchers, scientists, and technicians in related industries. The main purposes are to provide readers with 1) the basic physics behind defects in silicon materials, 2) the atomistic modeling as well as the characterization techniques related to defects and impurities in silicon materials, and 3) an overview of the wide range of the research fields involved.
