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Defects And Diffusion Studied Using Pac Spectroscopy
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Book Synopsis Defects and Diffusion Studied Using PAC Spectroscopy by : Herbert Jaeger
Download or read book Defects and Diffusion Studied Using PAC Spectroscopy written by Herbert Jaeger and published by Trans Tech Publications Ltd. This book was released on 2011-03-15 with total page 185 pages. Available in PDF, EPUB and Kindle. Book excerpt: Special topic volume with invited peer reviewed papers only.
Book Synopsis HFI/NQI 2007 by : Alberto Pasquevich
Download or read book HFI/NQI 2007 written by Alberto Pasquevich and published by Springer Science & Business Media. This book was released on 2010-04-08 with total page 648 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume of proceedings includes new and original scientific results along with recent developments in instrumentation and methods, in invited and contributed papers. Researchers and graduate students interested in hyperfine interaction detected by nuclear radiation as well as nuclear quadrupole interactions detected by resonance methods in the areas of materials, biological and medical science will find this volume indispensable.
Book Synopsis Spectroscopy And Structure Of Molecules And Nuclei - Proceedings Of The International Symposium by : Noah R Johnson
Download or read book Spectroscopy And Structure Of Molecules And Nuclei - Proceedings Of The International Symposium written by Noah R Johnson and published by World Scientific. This book was released on 1992-11-14 with total page 408 pages. Available in PDF, EPUB and Kindle. Book excerpt: This proceedings is a result of the conference held in honor of Professor Raymond K Sheline for his major contributions to our understanding of the properties of both nuclei and molecules and in celebration of his 70th birthday. The proceedings contains up-to-date treatments of forefront nuclear and molecular topics such as a determination of the mass of the neutrino, the unusual properties exhibited by nuclei under the stress of very rapid rotation, the structure of very loosely bound quantum systems, and the molecular mechanism of the solar to electric conversion.
Book Synopsis Defects and Impurities in Silicon Materials by : Yutaka Yoshida
Download or read book Defects and Impurities in Silicon Materials written by Yutaka Yoshida and published by Springer. This book was released on 2016-03-30 with total page 498 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book emphasizes the importance of the fascinating atomistic insights into the defects and the impurities as well as the dynamic behaviors in silicon materials, which have become more directly accessible over the past 20 years. Such progress has been made possible by newly developed experimental methods, first principle theories, and computer simulation techniques. The book is aimed at young researchers, scientists, and technicians in related industries. The main purposes are to provide readers with 1) the basic physics behind defects in silicon materials, 2) the atomistic modeling as well as the characterization techniques related to defects and impurities in silicon materials, and 3) an overview of the wide range of the research fields involved.
Book Synopsis Defect and Diffusion Forum Vols. 125-126 by : Graeme E. Murch
Download or read book Defect and Diffusion Forum Vols. 125-126 written by Graeme E. Murch and published by Trans Tech Publications Ltd. This book was released on 1995-03-03 with total page 302 pages. Available in PDF, EPUB and Kindle. Book excerpt: Journal issue
Book Synopsis Methods in Physical Chemistry, 2 Volume Set by : Rolf Schäfer
Download or read book Methods in Physical Chemistry, 2 Volume Set written by Rolf Schäfer and published by John Wiley & Sons. This book was released on 2012-05-29 with total page 902 pages. Available in PDF, EPUB and Kindle. Book excerpt: Thanks to the progress made in instruments and techniques, the methods in physical chemistry have developed rapidly over the past few decades, making them increasingly valuable for scientists of many disciplines. These two must-have volumes meet the needs of the scientific community for a thorough overview of all the important methods currently used. As such, this work bridges the gap between standard textbooks and review articles, covering a large number of methods, as well as the motivation behind their use. A uniform approach is adopted throughout both volumes, while the critical comparison of the advantages and disadvantages of each method makes this a valuable reference for physical chemists and other scientists working with these techniques.
Book Synopsis Nuclear Methods in Semiconductor Physics by : G. Langouche
Download or read book Nuclear Methods in Semiconductor Physics written by G. Langouche and published by Elsevier. This book was released on 1992-04-01 with total page 270 pages. Available in PDF, EPUB and Kindle. Book excerpt: The two areas of experimental research explored in this volume are: the Hyperfine Interaction Methods, focusing on the microscopic configuration surrounding radioactive probe atoms in semiconductors, and Ion Beam Techniques using scattering, energy loss and channeling properties of highly energetic ions penetrating in semiconductors. A large area of interesting local defect studies is discussed. Less commonly used methods in the semiconductor field, such as nuclear magnetic resonance, electron nuclear double resonance, muon spin resonance and positron annihilation, are also reviewed. The broad scope of the contributions clearly demonstrates the growing interest in the use of sometimes fairly unconventional nuclear methods in the field of semiconductor physics.
Book Synopsis Identification of Defects in Semiconductors by :
Download or read book Identification of Defects in Semiconductors written by and published by Academic Press. This book was released on 1998-10-27 with total page 449 pages. Available in PDF, EPUB and Kindle. Book excerpt: GENERAL DESCRIPTION OF THE SERIESSince its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry. GENERAL DESCRIPTION OF THE VOLUMEThis volume has contributions on Advanced Characterization Techniques with a focus on defect identification. The combination of beam techniques with electrical and optical characterization has not been discussed elsewhere.
Book Synopsis Semiconductor Device Reliability by : A. Christou
Download or read book Semiconductor Device Reliability written by A. Christou and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 571 pages. Available in PDF, EPUB and Kindle. Book excerpt: This publication is a compilation of papers presented at the Semiconductor Device Reliabi lity Workshop sponsored by the NATO International Scientific Exchange Program. The Workshop was held in Crete, Greece from June 4 to June 9, 1989. The objective of the Workshop was to review and to further explore advances in the field of semiconductor reliability through invited paper presentations and discussions. The technical emphasis was on quality assurance and reliability of optoelectronic and high speed semiconductor devices. The primary support for the meeting was provided by the Scientific Affairs Division of NATO. We are indebted to NATO for their support and to Dr. Craig Sinclair, who admin isters this program. The chapters of this book follow the format and order of the sessions of the meeting. Thirty-six papers were presented and discussed during the five-day Workshop. In addi tion, two panel sessions were held, with audience participation, where the particularly controversial topics of bum-in and reliability modeling and prediction methods were dis cussed. A brief review of these sessions is presented in this book.
Download or read book Diffusion and Defect Data written by and published by . This book was released on 1995 with total page 696 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Scientific and Technical Aerospace Reports by :
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1994 with total page 564 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Research With Fission Fragments - International Workshop by : Till Von Egidy
Download or read book Research With Fission Fragments - International Workshop written by Till Von Egidy and published by World Scientific. This book was released on 1997-06-27 with total page 434 pages. Available in PDF, EPUB and Kindle. Book excerpt: The acceleration of radioactive beams is a new and attractive field in nuclear physics. One of the most intense sources of very neutron-rich radioactive isotopes can be obtained by fission in a special uranium target close to the core of a research reactor. Two such installations are being planned: the PIAFE project in Grenoble and a similar facility at the new Munich research reactor FRM II. Accelerated fission fragments will facilitate the production of the heaviest elements by fusion and the investigation of nuclear structure and nuclear reactions for astrophysical purposes. This book discusses the application of fission fragments for many research fields.
Book Synopsis SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices by : John D. Cressler
Download or read book SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices written by John D. Cressler and published by CRC Press. This book was released on 2017-12-19 with total page 264 pages. Available in PDF, EPUB and Kindle. Book excerpt: What seems routine today was not always so. The field of Si-based heterostructures rests solidly on the shoulders of materials scientists and crystal growers, those purveyors of the semiconductor “black arts” associated with the deposition of pristine films of nanoscale dimensionality onto enormous Si wafers with near infinite precision. We can now grow near-defect free, nanoscale films of Si and SiGe strained-layer epitaxy compatible with conventional high-volume silicon integrated circuit manufacturing. SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices tells the materials side of the story and details the many advances in the Si-SiGe strained-layer epitaxy for device applications. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume defines and details the many advances in the Si/SiGe strained-layer epitaxy for device applications. Mining the talents of an international panel of experts, the book covers modern SiGe epitaxial growth techniques, epi defects and dopant diffusion in thin films, stability constraints, and electronic properties of SiGe, strained Si, and Si-C alloys. It includes appendices on topics such as the properties of Si and Ge, the generalized Moll-Ross relations, integral charge-control relations, and sample SiGe HBT compact model parameters.
Download or read book Superfluidity written by Fouad Sabry and published by One Billion Knowledgeable. This book was released on 2022-01-17 with total page 297 pages. Available in PDF, EPUB and Kindle. Book excerpt: What Is Superfluidity Superfluidity is the characteristic property of a fluid with zero viscosity which therefore flows without any loss of kinetic energy. When stirred, a superfluid forms vortices that continue to rotate indefinitely. Superfluidity occurs in two isotopes of helium when they are liquefied by cooling to cryogenic temperatures. It is also a property of various other exotic states of matter theorized to exist in astrophysics, high-energy physics, and theories of quantum gravity. The theory of superfluidity was developed by Soviet theoretical physicists Lev Landau and Isaak Khalatnikov. How You Will Benefit (I) Insights, and validations about the following topics: Chapter 1: Superfluidity Chapter 2: Superfluid vacuum theory Chapter 3: Boojum (superfluidity) Chapter 4: Condensed matter physics Chapter 5: Macroscopic quantum phenomena Chapter 6: Quantum hydrodynamics Chapter 7: Materials science (II) Answering the public top questions about superfluidity. (III) Real world examples for the usage of superfluidity in many fields. (IV) 17 appendices to explain, briefly, 266 emerging technologies in each industry to have 360-degree full understanding of superfluidity' technologies. Who This Book Is For Professionals, undergraduate and graduate students, enthusiasts, hobbyists, and those who want to go beyond basic knowledge or information for any kind of superfluidity.
Book Synopsis Silicon, Germanium, and Their Alloys by : Gudrun Kissinger
Download or read book Silicon, Germanium, and Their Alloys written by Gudrun Kissinger and published by CRC Press. This book was released on 2014-12-09 with total page 436 pages. Available in PDF, EPUB and Kindle. Book excerpt: Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these materials still demand research, eminently in view of the improvement of knowledge on silicon–germanium alloys and the potentialities of silicon as a substrate for high-efficiency solar cells and for compound semiconductors and the ongoing development of nanodevices based on nanowires and nanodots. Silicon, Germanium, and Their Alloys: Growth, Defects, Impurities, and Nanocrystals covers the entire spectrum of R&D activities in silicon, germanium, and their alloys, presenting the latest achievements in the field of crystal growth, point defects, extended defects, and impurities of silicon and germanium nanocrystals. World-recognized experts are the authors of the book’s chapters, which span bulk, thin film, and nanostructured materials growth and characterization problems, theoretical modeling, crystal defects, diffusion, and issues of key applicative value, including chemical etching as a defect delineation technique, the spectroscopic analysis of impurities, and the use of devices as tools for the measurement of materials quality.
Book Synopsis Point Defects and Defect Interactions in Metals by : Jin-ichi Takamura
Download or read book Point Defects and Defect Interactions in Metals written by Jin-ichi Takamura and published by Elsevier Science & Technology. This book was released on 1982 with total page 1026 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Silicon Heterostructure Handbook by : John D. Cressler
Download or read book Silicon Heterostructure Handbook written by John D. Cressler and published by CRC Press. This book was released on 2018-10-03 with total page 1248 pages. Available in PDF, EPUB and Kindle. Book excerpt: An extraordinary combination of material science, manufacturing processes, and innovative thinking spurred the development of SiGe heterojunction devices that offer a wide array of functions, unprecedented levels of performance, and low manufacturing costs. While there are many books on specific aspects of Si heterostructures, the Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits, and Applications of SiGe and Si Strained-Layer Epitaxy is the first book to bring all aspects together in a single source. Featuring broad, comprehensive, and in-depth discussion, this handbook distills the current state of the field in areas ranging from materials to fabrication, devices, CAD, circuits, and applications. The editor includes "snapshots" of the industrial state-of-the-art for devices and circuits, presenting a novel perspective for comparing the present status with future directions in the field. With each chapter contributed by expert authors from leading industrial and research institutions worldwide, the book is unequalled not only in breadth of scope, but also in depth of coverage, timeliness of results, and authority of references. It also includes a foreword by Dr. Bernard S. Meyerson, a pioneer in SiGe technology. Containing nearly 1000 figures along with valuable appendices, the Silicon Heterostructure Handbook authoritatively surveys materials, fabrication, device physics, transistor optimization, optoelectronics components, measurement, compact modeling, circuit design, and device simulation.
