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Crystalline Hafnia And Zirconia Based Dielectrics For Memory Applications
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Book Synopsis Crystalline Hafnia and Zirconia based Dielectrics for Memory Applications by : Tim S. Böscke
Download or read book Crystalline Hafnia and Zirconia based Dielectrics for Memory Applications written by Tim S. Böscke and published by Cuvillier Verlag. This book was released on 2010-05-31 with total page 180 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work investigates the crystallography and dielectric properties of Zirconium- and Hafnium-oxide based nano-scale thin film insulators for memory. Hafnium- and Zirconium-oxide are industry leading candidates for high-k dielectrics. Most application research has focused on the application of amorphous high-k due to formation of defects associated with the crystalline phase. However the application of crystalline dielectrics offers two advantages: Potentially high thermal stability, since no measures have to be taken to avoid crystallization, and the ability to manipulate crystalline phase composition to maximize dielectric constants. Pure ZrO2 crystallized at a lower temperature than HfO2 and always formed a metastable t’ higher-k phase. ZrO2 crystallized already during deposition, leading to leakage current degradation. It was shown that this problem could be solved by SiO2 addition to raise the crystallization temperature, allowing fabrication of low leakage, low effective oxide thickness (EOT) metal-insulator-metal (MIM) capacitors suitable for stack based DRAM down to the 4X nm node. HfO2, in contrast, formed a mixture of monoclinic and tetragonal phase which led to the formation of mechanical defects (microcracks). Addition of SiO2 allowed manipulating the phase composition of HfO2. When up to 7 mol% SiO2 was added, increased stabilization of the metastable t' phase with a dielectric constant of 34-36 was observed. It could be shown that the stabilization is due to a combination of a surface energy effect and solved SiO2 in the HfO2 lattice. Above 11 mol% SiO2 segregated from HfO2 and a tetragonal phase with higher c/a splitting and lower dielectric constant was stabilized instead. It was discovered that the behavior of HfSiO was fundamentally altered if it was crystallized under mechanical confinement in presence of a top electrode. Besides a significant increase in dielectric constant, the material exhibited ferroelectric and antiferroelectric polarization hysteresis, a characteristic not previously reported for HfO2 or ZrO2. This behavior originated from the formation of a new orthorhombic crystal phase. Utilizing the increased permittivity of the antiferroelectic phase, it was possible to demonstrate low EOT, highly temperature stable, MIM capacitors with potential application in sub 50 nm deep trench-DRAM generations. Novel ferroelectric HfSiO was used to fabricate ferroelectric field effect transistors which allowed long term nonvolatile data storage. The electrical characteristics of the devices meet or exceed that of the best published literature results. Full compatibility to silicon semiconductor technology with a gate stack thickness down to 5 nm was demonstrated for the first time, suggesting that HfSiO based FEFETs can potentially be scaled to below the 30 nm node. This goal could not be achieved with previously known materials.
Book Synopsis Formation of Ferroelectricity in Hafnium Oxide Based Thin Films by : Tony Schenk
Download or read book Formation of Ferroelectricity in Hafnium Oxide Based Thin Films written by Tony Schenk and published by BoD – Books on Demand. This book was released on 2017-03-15 with total page 194 pages. Available in PDF, EPUB and Kindle. Book excerpt: In 2011, Böscke et al. reported the unexpected discovery of ferroelectric properties in hafnia based thin films, which has since initiated many further studies and revitalized research on the topic of ferroelectric memories. In spite of many efforts, the unveiling of the fundamentals behind this surprising discovery has proven rather challenging. In this work, the originally claimed Pca21 phase is experimentally proven to be the root of the ferroelectric properties and the nature of this ferroelectricity is classified in the frame of existing concepts of ferroelectric materials. Parameters to stabilize this polar phase are examined from a theoretical and fabrication point of view. With these very basic questions addressed, the application relevant electric field cycling behavior is studied. The results of first-order reversal curves, impedance spectroscopy, scanning transmission electron microscopy and piezoresponse force microscopy significantly advance the understanding of structural mechanisms underlying wake-up, fatigue and the novel phenomenon of split-up/merging of transient current peaks. The impact of field cycling behavior on applications like ferroelectric memories is highlighted and routes to optimize it are derived. These findings help to pave the road for a successful commercialization of hafnia based ferroelectrics.
Book Synopsis Electrical Characterisation of Ferroelectric Field Effect Transistors based on Ferroelectric HfO2 Thin Films by : Ekaterina Yurchuk
Download or read book Electrical Characterisation of Ferroelectric Field Effect Transistors based on Ferroelectric HfO2 Thin Films written by Ekaterina Yurchuk and published by Logos Verlag Berlin GmbH. This book was released on 2015-06-30 with total page 184 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ferroelectric field effect transistor (FeFET) memories based on a new type of ferroelectric material (silicon doped hafnium oxide) were studied within the scope of the present work. Utilisation of silicon doped hafnium oxide (Si:HfO2 thin films instead of conventional perovskite ferroelectrics as a functional layer in FeFETs provides compatibility to the CMOS process as well as improved device scalability. The influence of different process parameters on the properties of Si:HfO2 thin films was analysed in order to gain better insight into the occurrence of ferroelectricity in this system. A subsequent examination of the potential of this material as well as its possible limitations with the respect to the application in non-volatile memories followed. The Si:HfO2-based ferroelectric transistors that were fully integrated into the state-of-the-art high-k metal gate CMOS technology were studied in this work for the first time. The memory performance of these devices scaled down to 28 nm gate length was investigated. Special attention was paid to the charge trapping phenomenon shown to significantly affect the device behaviour.
Book Synopsis Development and Investigation of Novel Logic-in-Memory and Nonvolatile Logic Circuits Utilizing Hafnium Oxide-Based Ferroelectric Field-Effect Transistors by : Evelyn Tina Breyer
Download or read book Development and Investigation of Novel Logic-in-Memory and Nonvolatile Logic Circuits Utilizing Hafnium Oxide-Based Ferroelectric Field-Effect Transistors written by Evelyn Tina Breyer and published by BoD – Books on Demand. This book was released on 2022-02-08 with total page 216 pages. Available in PDF, EPUB and Kindle. Book excerpt: Not only conventional computer architectures, such as the von-Neumann architecture with its inevitable von-Neumann bottleneck, but likewise the emerging field of edge computing require to substantially decrease the spatial separation of logic and memory units to overcome power and latency shortages. The integration of logic operations into memory units (Logic-in-Memory), as well as memory elements into logic circuits (Nonvolatile Logic), promises to fulfill this request by combining high-speed with low-power operation. Ferroelectric field-effect transistors (FeFETs) based on hafnium oxide prove to be auspicious candidates for the memory elements in applications of that kind, as those nonvolatile memory elements are CMOS-compatible and likewise scalable. This work presents implementations that merge logic and memory by exploiting the natural capability of the FeFET to combine logic functionality (transistor) and memory ability (nonvolatility).
Book Synopsis Ferroelectricity in Doped Hafnium Oxide by : Uwe Schroeder
Download or read book Ferroelectricity in Doped Hafnium Oxide written by Uwe Schroeder and published by Woodhead Publishing. This book was released on 2019-03-27 with total page 572 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, including non-volatile memories, negative capacitance field-effect-transistors, energy storage, harvesting, and solid-state cooling. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are also extensively discussed in the book, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more. Additional chapters consider the modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HFO2 and standard ferroelectric materials. Finally, HfO2 based devices are summarized. - Explores all aspects of the structural and electrical properties of HfO2, including processes, modelling and implementation into semiconductor devices - Considers potential applications including FeCaps, FeFETs, NCFETs, FTJs and more - Provides comparison of an emerging ferroelectric material to conventional ferroelectric materials with insights to the problems of downscaling that conventional ferroelectrics face
Book Synopsis High-k Gate Dielectrics for CMOS Technology by : Gang He
Download or read book High-k Gate Dielectrics for CMOS Technology written by Gang He and published by John Wiley & Sons. This book was released on 2012-08-10 with total page 560 pages. Available in PDF, EPUB and Kindle. Book excerpt: A state-of-the-art overview of high-k dielectric materials for advanced field-effect transistors, from both a fundamental and a technological viewpoint, summarizing the latest research results and development solutions. As such, the book clearly discusses the advantages of these materials over conventional materials and also addresses the issues that accompany their integration into existing production technologies. Aimed at academia and industry alike, this monograph combines introductory parts for newcomers to the field as well as advanced sections with directly applicable solutions for experienced researchers and developers in materials science, physics and electrical engineering.
Book Synopsis Metal Oxides for Non-volatile Memory by : Panagiotis Dimitrakis
Download or read book Metal Oxides for Non-volatile Memory written by Panagiotis Dimitrakis and published by Elsevier. This book was released on 2022-03-01 with total page 534 pages. Available in PDF, EPUB and Kindle. Book excerpt: Metal Oxides for Non-volatile Memory: Materials, Technology and Applications covers the technology and applications of metal oxides (MOx) in non-volatile memory (NVM) technology. The book addresses all types of NVMs, including floating-gate memories, 3-D memories, charge-trapping memories, quantum-dot memories, resistance switching memories and memristors, Mott memories and transparent memories. Applications of MOx in DRAM technology where they play a crucial role to the DRAM evolution are also addressed. The book offers a broad scope, encompassing discussions of materials properties, deposition methods, design and fabrication, and circuit and system level applications of metal oxides to non-volatile memory. Finally, the book addresses one of the most promising materials that may lead to a solution to the challenges in chip size and capacity for memory technologies, particular for mobile applications and embedded systems. - Systematically covers metal oxides materials and their properties with memory technology applications, including floating-gate memory, 3-D memory, memristors, and much more - Provides an overview on the most relevant deposition methods, including sputtering, CVD, ALD and MBE - Discusses the design and fabrication of metal oxides for wide breadth of non-volatile memory applications from 3-D flash technology, transparent memory and DRAM technology
Book Synopsis Atomic Layer Deposition for Semiconductors by : Cheol Seong Hwang
Download or read book Atomic Layer Deposition for Semiconductors written by Cheol Seong Hwang and published by Springer Science & Business Media. This book was released on 2013-10-18 with total page 266 pages. Available in PDF, EPUB and Kindle. Book excerpt: Offering thorough coverage of atomic layer deposition (ALD), this book moves from basic chemistry of ALD and modeling of processes to examine ALD in memory, logic devices and machines. Reviews history, operating principles and ALD processes for each device.
Book Synopsis Ceramic Abstracts by : American Ceramic Society
Download or read book Ceramic Abstracts written by American Ceramic Society and published by . This book was released on 1993 with total page 678 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Lead-Free Piezoelectrics by : Shashank Priya
Download or read book Lead-Free Piezoelectrics written by Shashank Priya and published by Springer Science & Business Media. This book was released on 2011-11-19 with total page 521 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ecological restrictions in many parts of the world are demanding the elimination of Pb from all consumer items. At this moment in the piezoelectric ceramics industry, there is no issue of more importance than the transition to lead-free materials. The goal of Lead-Free Piezoelectrics is to provide a comprehensive overview of the fundamentals and developments in the field of lead-free materials and products to leading researchers in the world. The text presents chapters on demonstrated applications of the lead-free materials, which will allow readers to conceptualize the present possibilities and will be useful for both students and professionals conducting research on ferroelectrics, piezoelectrics, smart materials, lead-free materials, and a variety of applications including sensors, actuators, ultrasonic transducers and energy harvesters.
Book Synopsis Internal Photoemission Spectroscopy by : Valeri V. Afanas'ev
Download or read book Internal Photoemission Spectroscopy written by Valeri V. Afanas'ev and published by Elsevier. This book was released on 2014-02-22 with total page 404 pages. Available in PDF, EPUB and Kindle. Book excerpt: The second edition of Internal Photoemission Spectroscopy thoroughly updates this vital, practical guide to internal photoemission (IPE) phenomena and measurements. The book's discussion of fundamental physical and technical aspects of IPE spectroscopic applications is supplemented by an extended overview of recent experimental results in swiftly advancing research fields. These include the development of insulating materials for advanced SiMOS technology, metal gate materials, development of heterostructures based on high-mobility semiconductors, and more. Recent results concerning the band structure of important interfaces in novel materials are covered as well. Internal photoemission involves the physics of charge carrier photoemission from one solid to another, and different spectroscopic applications of this phenomenon to solid state heterojunctions. This technique complements conventional external photoemission spectroscopy by analyzing interfaces separated from the sample surface by a layer of a different solid or liquid. Internal photoemission provides the most straightforward, reliable information regarding the energy spectrum of electron states at interfaces. At the same time, the method enables the analysis of heterostructures relevant to modern micro- and nano-electronic devices as well as new materials involved in their design and fabrication. - First complete model description of the internal photoemission phenomena - Overview of the most reliable energy barrier determination procedures and trap characterization methods - Overview of the most recent results on band structure of high-permittivity insulating materials and their interfaces with semiconductors and metals
Download or read book The Engineering Index Annual written by and published by . This book was released on 1992 with total page 2264 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its creation in 1884, Engineering Index has covered virtually every major engineering innovation from around the world. It serves as the historical record of virtually every major engineering innovation of the 20th century. Recent content is a vital resource for current awareness, new production information, technological forecasting and competitive intelligence. The world?s most comprehensive interdisciplinary engineering database, Engineering Index contains over 10.7 million records. Each year, over 500,000 new abstracts are added from over 5,000 scholarly journals, trade magazines, and conference proceedings. Coverage spans over 175 engineering disciplines from over 80 countries. Updated weekly.
Book Synopsis Resistive Switching by : Daniele Ielmini
Download or read book Resistive Switching written by Daniele Ielmini and published by . This book was released on 2016 with total page 755 pages. Available in PDF, EPUB and Kindle. Book excerpt: With its comprehensive coverage, this reference introduces readers to the wide topic of resistance switching, providing the knowledge, tools, and methods needed to understand, characterize and apply resistive switching memories. Starting with those materials that display resistive switching behavior, the book explains the basics of resistive switching as well as switching mechanisms and models. An in-depth discussion of memory reliability is followed by chapters on memory cell structures and architectures, while a section on logic gates rounds off the text. An invaluable self-contained book for materials scientists, electrical engineers and physicists dealing with memory research and development.
Book Synopsis Defects in HIgh-k Gate Dielectric Stacks by : Evgeni Gusev
Download or read book Defects in HIgh-k Gate Dielectric Stacks written by Evgeni Gusev and published by Springer Science & Business Media. This book was released on 2006-02-15 with total page 495 pages. Available in PDF, EPUB and Kindle. Book excerpt: The goal of this NATO Advanced Research Workshop (ARW) entitled “Defects in Advanced High-k Dielectric Nano-electronic Semiconductor Devices”, which was held in St. Petersburg, Russia, from July 11 to 14, 2005, was to examine the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. The special feature of this workshop was focus on an important issue of defects in this novel class of materials. One of the key obstacles to high-k integration into Si nano-technology are the electronic defects in high-k materials. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. However, very little is known about the nature of the defects or about possible techniques to eliminate, or at least minimize them. Given the absence of a feasible alternative in the near future, well-focused scientific research and aggressive development programs on high-k gate dielectrics and related devices must continue for semiconductor electronics to remain a competitive income producing force in the global market.
Book Synopsis Mechanical Properties of Ceramics by : John B. Wachtman
Download or read book Mechanical Properties of Ceramics written by John B. Wachtman and published by John Wiley & Sons. This book was released on 2009-08-13 with total page 496 pages. Available in PDF, EPUB and Kindle. Book excerpt: A Comprehensive and Self-Contained Treatment of the Theory and Practical Applications of Ceramic Materials When failure occurs in ceramic materials, it is often catastrophic, instantaneous, and total. Now in its Second Edition, this important book arms readers with a thorough and accurate understanding of the causes of these failures and how to design ceramics for failure avoidance. It systematically covers: Stress and strain Types of mechanical behavior Strength of defect-free solids Linear elastic fracture mechanics Measurements of elasticity, strength, and fracture toughness Subcritical crack propagation Toughening mechanisms in ceramics Effects of microstructure on toughness and strength Cyclic fatigue of ceramics Thermal stress and thermal shock in ceramics Fractography Dislocation and plastic deformation in ceramics Creep and superplasticity of ceramics Creep rupture at high temperatures and safe life design Hardness and wear And more While maintaining the first edition's reputation for being an indispensable professional resource, this new edition has been updated with sketches, explanations, figures, tables, summaries, and problem sets to make it more student-friendly as a textbook in undergraduate and graduate courses on the mechanical properties of ceramics.
Book Synopsis Fundamentals of III-V Semiconductor MOSFETs by : Serge Oktyabrsky
Download or read book Fundamentals of III-V Semiconductor MOSFETs written by Serge Oktyabrsky and published by Springer Science & Business Media. This book was released on 2010-03-16 with total page 451 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.
Book Synopsis Ferroelectric Thin Films by : Masanori Okuyama
Download or read book Ferroelectric Thin Films written by Masanori Okuyama and published by Springer Science & Business Media. This book was released on 2005-02-22 with total page 272 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ferroelectric thin films continue to attract much attention due to their developing applications in memory devices, FeRAM, infrared sensors, piezoelectric sensors and actuators. This book, aimed at students, researchers and developers, gives detailed information about the basic properties of these materials and the associated device physics. The contributing authors are acknowledged experts in the field.
