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Conception Et Realisation Technologique De Transistors De La Filiere Hemts Algan Gan Sur Substrat Silicium Pour Lamplification De Puissance Hyperfrequence
Download Conception Et Realisation Technologique De Transistors De La Filiere Hemts Algan Gan Sur Substrat Silicium Pour Lamplification De Puissance Hyperfrequence full books in PDF, epub, and Kindle. Read online Conception Et Realisation Technologique De Transistors De La Filiere Hemts Algan Gan Sur Substrat Silicium Pour Lamplification De Puissance Hyperfrequence ebook anywhere anytime directly on your device. Fast Download speed and no annoying ads. We cannot guarantee that every ebooks is available!
Book Synopsis Analysis and Optimization of AlGaN/GaN High Electron Mobility Transistors for Microwave Applications by : Michael Hosch
Download or read book Analysis and Optimization of AlGaN/GaN High Electron Mobility Transistors for Microwave Applications written by Michael Hosch and published by Cuvillier Verlag. This book was released on 2011-08-08 with total page 129 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis deals with the analysis and optimization of some of the most prominent non-ideal effects in AlGaN/GaN high electron mobility transistors used in microwave applications as well as the optimization of the RF gain. The effect of current collapse, the root cause of leakage currents as well as field-dependent self-heating effects have been investigated by eletrical characterization using well established techniques and have been analyzed using 2-dimensional physical device simulations. It will be shown that the origin of all effects is strongly related to the device surface and some are even competing effects making device optimization a challenge. However, a detailed localization of the regions affecting device performance will be given leading to a better understanding for fabrication process optimization. Finally, I simulation study is conducted giving suggestions for RF gain improvement based on very simple device layout variations.
Book Synopsis AlGaN/GaN-Based Millimeter-Wave High Electron Mobility Transistors by : Christian Haupt
Download or read book AlGaN/GaN-Based Millimeter-Wave High Electron Mobility Transistors written by Christian Haupt and published by . This book was released on 2011 with total page 175 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this work a scaling approach is studied to develop a transistor technology which achieves a high gain as well as a high output power at W-band frequencies and can be applied in the existing fabrication process for MMICs. Following the theoretical scaling rules for field effect transistors lateral and vertical critical dimensions of 100 nm and 10 nm must be achieved, respectively. Therefore various new fabrication processes were developed to enable the new critical dimensions with a sufficient production yield for MMIC fabrication. Transistors fabricated with these methods were evaluated regarding the influence of the scaled geometries on the device characteristics using S-parameter as well as DC-measurements. As a result a transistor technology could be established with a transconductance above 600 mS/mm which is one of the highest reported values for GaN-based HEMTs so far. Furthermore, these transistors feature a very low parasitic capacitance of 0.3 pF/mm and can as a consequence achieve a current-gain cut-off frequency of more than 110 GHz. Besides the high frequency characteristics short channel effects and their influence on the device characteristics were also evaluated. The scaled transistors are dominated by a drain induced barrier lowering (DIBL) and a critical aspect ratio of approximately 14 is necessary to suppress the DIBL-effect in GaN-HEMTs.
Book Synopsis Different Types of Field-Effect Transistors by : Momčilo Pejović
Download or read book Different Types of Field-Effect Transistors written by Momčilo Pejović and published by BoD – Books on Demand. This book was released on 2017-06-07 with total page 194 pages. Available in PDF, EPUB and Kindle. Book excerpt: In 1959, Atalla and Kahng at Bell Labs produced the first successful field-effect transistor (FET), which had been long anticipated by other researchers by overcoming the "surface states" that blocked electric fields from penetrating into the semiconductor material. Very quickly, they became the fundamental basis of digital electronic circuits. Up to this point, there are more than 20 different types of field-effect transistors that are incorporated in various applications found in everyday's life. Based on this fact, this book was designed to overview some of the concepts regarding FETs that are currently used as well as some concepts that are still being developed.
Book Synopsis GaN Transistor Modeling for RF and Power Electronics by : Yogesh Singh Chauhan
Download or read book GaN Transistor Modeling for RF and Power Electronics written by Yogesh Singh Chauhan and published by Elsevier. This book was released on 2024-05-20 with total page 262 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaN Transistor Modeling for RF and Power Electronics: Using The ASM-GaN-HEMT Model covers all aspects of characterization and modeling of GaN transistors for both RF and Power electronics applications. Chapters cover an in-depth analysis of the industry standard compact model ASM-HEMT for GaN transistors. The book details the core surface-potential calculations and a variety of real device effects, including trapping, self-heating, field plate effects, and more to replicate realistic device behavior. The authors also include chapters on step-by-step parameter extraction procedures for the ASM-HEMT model and benchmark test results. GaN is the fastest emerging technology for RF circuits as well as power electronics. This technology is going to grow at an exponential rate over the next decade. This book is envisioned to serve as an excellent reference for the emerging GaN technology, especially for circuit designers, materials science specialists, device engineers and academic researchers and students. - Provides an overview of the operation and physics of GaN-based transistors - Features in-depth description (by the developers of the model) of all aspects of the industry standard ASM-HEMT model for GaN circuits - Details parameter extraction of GaN devices and measurement data requirements for GaN model extraction
Book Synopsis GaN Transistors for Efficient Power Conversion by : Alex Lidow
Download or read book GaN Transistors for Efficient Power Conversion written by Alex Lidow and published by John Wiley & Sons. This book was released on 2014-06-26 with total page 266 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium nitride (GaN) is an emerging technology that promises to displace silicon MOSFETs in the next generation of power transistors. As silicon approaches its performance limits, GaN devices offer superior conductivity and switching characteristics, allowing designers to greatly reduce system power losses, size, weight, and cost. This timely second edition has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices. With higher-frequency switching capabilities, GaN devices offer the chance to increase efficiency in existing applications such as DC–DC conversion, while opening possibilities for new applications including wireless power transfer and envelope tracking. This book is an essential learning tool and reference guide to enable power conversion engineers to design energy-efficient, smaller and more cost-effective products using GaN transistors. Key features: Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications. Contains useful discussions on device–circuit interactions, which are highly valuable since the new and high performance GaN power transistors require thoughtfully designed drive/control circuits in order to fully achieve their performance potential. Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors – see companion website for further details. A valuable learning resource for professional engineers and systems designers needing to fully understand new devices as well as electrical engineering students.
Book Synopsis Intermodulation Distortion in GaN HEMT by : Ibrahim Khalil
Download or read book Intermodulation Distortion in GaN HEMT written by Ibrahim Khalil and published by Cuvillier Verlag. This book was released on 2010-01-03 with total page 158 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work treats intermodulation distortion performance of GaN-HEMT high-power transistors. A detailed study on the physical parameters influencing third-order intermodulation distortions is carried out, based on the large-signal model and on physical device simulation. Devices are characterized in terms of linearity by setting up a sophisticated measurement system. Among others, an electronic fuse is used at the drain side to avoid catastrophic failure during measurement. The bias-dependent transconductance characteristic is identified as the dominating source for intermodulation distortion in GaN HEMTs, while drain-source capacitance and access resistances have only minor influence. The corresponding physical parameters governing the transconductance behavior are determined and optimized structures for high linearity are proposed. Besides characterization and analysis of conventional designs, a novel device architecture for very high linearity is presented. Finally, performance of GaN HEMTs within a hybrid amplifier configuration is shown and the combination of high power, high linearity, and low-noise characteristics is highlighted.
Book Synopsis Modeling of AlGaN/GaN High Electron Mobility Transistors by : D. Nirmal
Download or read book Modeling of AlGaN/GaN High Electron Mobility Transistors written by D. Nirmal and published by Springer. This book was released on 2025-02-11 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume focuses on GaN HEMT, the most promising transistor technology for RF power applications such as 5G communications, space and defense. The contents include accurate small signal models required to predict the RF power performance of RF electronic circuits, large signal modeling of GaN HEMTs, accurate and compact physical models to assist the RF circuit designers to optimize GaN HEMT-based power amplifiers and integrated circuits, among others. The book also covers thermal resistance modeling of GaN HEMTs, charge-based compact models, and surface potential-based models to study the impact of gate leakage current on the RF power performance of GaN HEMTs. This book also deals with the analytical modeling of intrinsic charges and surface potential of GaN HEMTs, physical modeling of charge trapping, neural network-based GaN HEMT models, numerical-based GaN HEMT models, modeling of short channel effects in GaN HEMTs, modeling of parasitic capacitances and resistances, modelingof current collapse and kink effects in HGaN HEMTs, etc. This volume will be a useful to those in industry and academia.
Book Synopsis GaN HEMT Modeling Including Trapping Effects Based on Chalmers Model and Pulsed S-Parameter Measurements by : Peng Luo
Download or read book GaN HEMT Modeling Including Trapping Effects Based on Chalmers Model and Pulsed S-Parameter Measurements written by Peng Luo and published by Cuvillier Verlag. This book was released on 2019-01-09 with total page 160 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaN HEMTs are regarded as one of the most promising RF power transistor technologies thanks to their high-voltage high-speed characteristics. However, they are still known to be prone to trapping effects, which hamper achievable output power and linearity. Hence, accurately and efficiently modeling the trapping effects is crucial in nonlinear large-signal modeling for GaN HEMTs. This work proposes a trap model based on Chalmers model, an industry standard large-signal model. Instead of a complex nonlinear trap description, only four constant parameters of the proposed trap model need to be determined to accurately describe the significant impacts of the trapping effects, e.g., drain-source current slump, typical kink observed in pulsed I/V characteristics, and degradation of the output power. Moreover, the extraction procedure of the trap model parameters is based on pulsed S-parameter measurements, which allow to freeze traps and isolate the trapping effects from self-heating. The model validity is tested through small- and large-signal model verification procedures. Particularly, it is shown that the use of this trap model enables to dramatically improve the large-signal simulation results.
Book Synopsis GaN-based Tri-gate High Electron Mobility Transistors by : Erdin Ture
Download or read book GaN-based Tri-gate High Electron Mobility Transistors written by Erdin Ture and published by Fraunhofer Verlag. This book was released on 2018 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The rapidly-growing data throughput rates in a wide range of wireless communication applications are pushing the established semiconductor device technologies to their limits. Considerably higher levels of solid-state output power will therefore be needed to meet the demand in the next generation satellite communications as well as the RADAR systems. Owing to their superior material properties such as high breakdown fields and peak electron velocities, GaN-based high electron mobility transistors (HEMTs) have recently prevailed in high-power systems operating in the microwave frequency bands. On the other hand at the millimetre-wave (MMW) and sub-MMW frequencies, highly-scaled GaN HEMTs are prone to experiencing deteriorated high frequency characteristics which severely limit the high-power performance. In an attempt to overcome this, 3-dimensional GaN HEMT devices featuring the Tri-gate topology are developed in this work, exhibiting enhanced performance in terms of both off- and on-state figures of merit. The demonstrated results promote the great potential of Tri-gate GaN HEMTs for both MMW power amplifier and high-speed logic applications.
Book Synopsis Advanced Modeling of AlGaN/GaN HEMTs and Si Power MOSFETs for Switched-mode Applications and Electromagnetic Interference Simulation by : Christian Marc Lautensack
Download or read book Advanced Modeling of AlGaN/GaN HEMTs and Si Power MOSFETs for Switched-mode Applications and Electromagnetic Interference Simulation written by Christian Marc Lautensack and published by . This book was released on 2013 with total page 164 pages. Available in PDF, EPUB and Kindle. Book excerpt:
