Handbook of Aerospace Electromagnetic Compatibility

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Publisher : John Wiley & Sons
ISBN 13 : 1119082781
Total Pages : 768 pages
Book Rating : 4.1/5 (19 download)

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Book Synopsis Handbook of Aerospace Electromagnetic Compatibility by : Dr. Reinaldo J. Perez

Download or read book Handbook of Aerospace Electromagnetic Compatibility written by Dr. Reinaldo J. Perez and published by John Wiley & Sons. This book was released on 2018-11-30 with total page 768 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive resource that explores electromagnetic compatibility (EMC) for aerospace systems Handbook of Aerospace Electromagnetic Compatibility is a groundbreaking book on EMC for aerospace systems that addresses both aircraft and space vehicles. With contributions from an international panel of aerospace EMC experts, this important text deals with the testing of spacecraft components and subsystems, analysis of crosstalk and field coupling, aircraft communication systems, and much more. The text also includes information on lightning effects and testing, as well as guidance on design principles and techniques for lightning protection. The book offers an introduction to E3 models and techniques in aerospace systems and explores EMP effects on and technology for aerospace systems. Filled with the most up-to-date information, illustrative examples, descriptive figures, and helpful scenarios, Handbook of Aerospace Electromagnetic Compatibility is designed to be a practical information source. This vital guide to electromagnetic compatibility: • Provides information on a range of topics including grounding, coupling, test procedures, standards, and requirements • Offers discussions on standards for aerospace applications • Addresses aerospace EMC through the use of testing and theoretical approaches Written for EMC engineers and practitioners, Handbook of Aerospace Electromagnetic Compatibility is a critical text for understanding EMC for aerospace systems.

The Challenge of Change

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Author :
Publisher : Christian Faith Publishing, Inc.
ISBN 13 : 1098051017
Total Pages : 533 pages
Book Rating : 4.0/5 (98 download)

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Book Synopsis The Challenge of Change by : Rebecca Hampl

Download or read book The Challenge of Change written by Rebecca Hampl and published by Christian Faith Publishing, Inc.. This book was released on 2022-08-01 with total page 533 pages. Available in PDF, EPUB and Kindle. Book excerpt: At the age of twenty-eight, Marty Ellis is still a bachelor who graduated with a major in journalism and a minor in photojournalism. He enjoys his life with various girlfriends while knocking back drinks in bars, going out to dinner, and rolling in the sheets. Yet inevitably, he grows tired of these surface-level-only feelings, shells out his standard goodbye speech, and moves on. However, using only his body and saying sayonara to his love lifeaEUR(tm)s revolving door is not how he wants to live for the rest of his life. How will he ever know what true love feels like if he doesnaEUR(tm)t ascertain how to actually give it? In what way will he begin to be able to discover the whole package that runs beneath the surface of a woman? Unexpectedly, Marty is blindsided when his best friend invites him to leave New Jersey for a weekend trip. Lauren Morris is a beautiful thirty-two-year-old woman who, after graduating at the age of twenty-one with a masteraEUR(tm)s degree in business, took a huge leap of faith and purchased an old farmhouse in Vermont. After ten years of hard work and sweat equity, she has transformed it into a beautiful inn that has become extremely lucrative. But winter is fast approaching, and she is dreading that feeling of loneliness that is connected to darkened afternoons and long, empty nights. Will a man ever enter her life? One that she could love and perhaps be with until death due them part? After meeting Marty, Lauren begins to consider if this man might be the one she has been waiting for her whole life. But then again, she is older than he is; long distance relationships hardly ever work out; and sudden heartbreaking unforeseen events rock both of their worlds. And if they do fall in love, which one of them will have to make the ultimate sacrifice and give up what theyaEUR(tm)ve worked so hard to achieve in order to be together? With so many changes causing so many challenges, will they get through them together, or will one push the other away?

The Political Economy of Populism

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Author :
Publisher : Routledge
ISBN 13 : 100020071X
Total Pages : 94 pages
Book Rating : 4.0/5 (2 download)

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Book Synopsis The Political Economy of Populism by : Petar Stankov

Download or read book The Political Economy of Populism written by Petar Stankov and published by Routledge. This book was released on 2020-07-21 with total page 94 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Political Economy of Populism explores the interplay between identity, the economy and inequality to explain the dynamics of populist votes since the beginning of the 20th century. The book discusses the political and economic implications of populist governance using data on populist incumbencies and linking it to historical data on the macro economy and democracy. Chapters draw from the most recent political science, economics and other social science literature, as well as historical data, to explain the long-term causes and consequences of populism. Populism emerges and gains traction when political entrepreneurs exploit underlying identity conflicts for political gains. As the distributional consequences of both economic distress and economic growth typically favor the elite over the poor and the lower middle class, economic shocks usually sharpen the underlying identity conflicts between the groups. The book provides evidence of significant differences in the ways fiscal and monetary policies are conducted by incumbent populists in Latin America, Europe and the OECD. The work concludes by suggesting avenues through which a 21st century social consensus can be built, so that our society can avoid repeating the mistakes that led to wars and failed economic experiments in the 20th century. The Political Economy of Populism marks a significant contribution to the study of populism and is suited to students and scholars across the social sciences, including economics, political science and sociology.

Silicon-on-Insulator Technology

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Publisher : Springer Science & Business Media
ISBN 13 : 1475726112
Total Pages : 277 pages
Book Rating : 4.4/5 (757 download)

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Book Synopsis Silicon-on-Insulator Technology by : J.-P. Colinge

Download or read book Silicon-on-Insulator Technology written by J.-P. Colinge and published by Springer Science & Business Media. This book was released on 2013-03-09 with total page 277 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon-on-Insulator Technology: Materials to VLSI, 2nd Edition describes the different facets of SOI technology. SOI chips are now commercially available and SOI wafer manufacturers have gone public. SOI has finally made it out of the academic world and is now a big concern for every major semiconductor company. SOI technology has indeed deserved serious recognition: high-temperature (400°C), extremely rad-hard (500 Mrad(Si)), high-density (16 Mb, 0.9-volt DRAM), high-speed (several GHz) and low-voltage (0.5 V) SOI circuits have been demonstrated. Strategic choices in favor of the use of SOI for low-voltage, low-power portable systems have been made by several major semiconductor manufacturers. Silicon-on-Insulator Technology: Materials to VLSI, 2nd Edition presents a complete and state-of-the-art review of SOI materials, devices and circuits. SOI fabrication and characterization techniques, SOI device processing, the physics of the SOI MOSFET as well as that of SOI other devices, and the performances of SOI circuits are discussed in detail. The SOI specialist will find this book invaluable as a source of compiled references covering the different aspects of SOI technology. For the non-specialist, the book serves as an excellent introduction to the topic with detailed, yet simple and clear explanations. Silicon-on-Insulator Technology: Materials to VLSI, 2nd Edition is recommended for use as a textbook for classes on semiconductor device processing and physics. The level of the book is appropriate for teaching at both the undergraduate and graduate levels. Silicon-on-Insulator Technology: Materials to VLSI, 2nd Edition includes the new materials, devices, and circuit concepts which have been devised since the publication of the first edition. The circuit sections, in particular, have been updated to present the performances of SOI devices for low-voltage, low-power applications, as well as for high-temperature, smart-power, and DRAM applications. The other sections, such as those describing SOI materials, the physics of the SOI MOSFET and other devices have been updated to present the state of the art in SOI technology.

Low-Voltage SOI CMOS VLSI Devices and Circuits

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Author :
Publisher : Wiley-Interscience
ISBN 13 :
Total Pages : 432 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Low-Voltage SOI CMOS VLSI Devices and Circuits by : James B. Kuo

Download or read book Low-Voltage SOI CMOS VLSI Devices and Circuits written by James B. Kuo and published by Wiley-Interscience. This book was released on 2001-10 with total page 432 pages. Available in PDF, EPUB and Kindle. Book excerpt: A practical, comprehensive survey of SOI CMOS devices and circuits for microelectronics engineers The microelectronics industry is becoming increasingly dependent on SOI CMOS VLSI devices and circuits. This book is the first to address this important topic with a practical focus on devices and circuits. It provides an up-to-date survey of the current knowledge regarding SOI device behaviors and describes state-of-the-art low-voltage CMOS VLSI analog and digital circuit techniques. Low-Voltage SOI CMOS VLSI Devices and Circuits covers the entire field, from basic concepts to the most advanced ideas. Topics include: * SOI device behavior: fundamental and floating body effects, hot carrier effects, sensitivity, reliability, self-heating, breakdown, ESD, dual-gate devices, accumulation-mode devices, short channel effects, and narrow channel effects * Low-voltage SOI digital circuits: floating body effects, DRAM, SRAM, static logic, dynamic logic, gate array, CPU, frequency divider, and DSP * Low-voltage SOI analog circuits: op amps, filters, ADC/DAC, sigma-delta modulators, RF circuits, VCO, mixers, low-noise amplifiers, and high-temperature circuits With over 300 references to the state of the art and over 300 important figures on low-voltage SOI CMOS devices and circuits, this volume serves as an authoritative, reliable resource for engineers designing these circuits in high-tech industries.

Silicon Nanowire Transistors

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Author :
Publisher : Springer
ISBN 13 : 3319271776
Total Pages : 176 pages
Book Rating : 4.3/5 (192 download)

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Book Synopsis Silicon Nanowire Transistors by : Ahmet Bindal

Download or read book Silicon Nanowire Transistors written by Ahmet Bindal and published by Springer. This book was released on 2016-02-23 with total page 176 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes the n and p-channel Silicon Nanowire Transistor (SNT) designs with single and dual-work functions, emphasizing low static and dynamic power consumption. The authors describe a process flow for fabrication and generate SPICE models for building various digital and analog circuits. These include an SRAM, a baseband spread spectrum transmitter, a neuron cell and a Field Programmable Gate Array (FPGA) platform in the digital domain, as well as high bandwidth single-stage and operational amplifiers, RF communication circuits in the analog domain, in order to show this technology’s true potential for the next generation VLSI.

Matching Properties of Deep Sub-Micron MOS Transistors

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Author :
Publisher : Springer Science & Business Media
ISBN 13 : 0387243135
Total Pages : 214 pages
Book Rating : 4.3/5 (872 download)

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Book Synopsis Matching Properties of Deep Sub-Micron MOS Transistors by : Jeroen A. Croon

Download or read book Matching Properties of Deep Sub-Micron MOS Transistors written by Jeroen A. Croon and published by Springer Science & Business Media. This book was released on 2006-06-20 with total page 214 pages. Available in PDF, EPUB and Kindle. Book excerpt: Matching Properties of Deep Sub-Micron MOS Transistors examines this interesting phenomenon. Microscopic fluctuations cause stochastic parameter fluctuations that affect the accuracy of the MOSFET. For analog circuits this determines the trade-off between speed, power, accuracy and yield. Furthermore, due to the down-scaling of device dimensions, transistor mismatch has an increasing impact on digital circuits. The matching properties of MOSFETs are studied at several levels of abstraction: A simple and physics-based model is presented that accurately describes the mismatch in the drain current. The model is illustrated by dimensioning the unit current cell of a current-steering D/A converter. The most commonly used methods to extract the matching properties of a technology are bench-marked with respect to model accuracy, measurement accuracy and speed, and physical contents of the extracted parameters. The physical origins of microscopic fluctuations and how they affect MOSFET operation are investigated. This leads to a refinement of the generally applied 1/area law. In addition, the analysis of simple transistor models highlights the physical mechanisms that dominate the fluctuations in the drain current and transconductance. The impact of process parameters on the matching properties is discussed. The impact of gate line-edge roughness is investigated, which is considered to be one of the roadblocks to the further down-scaling of the MOS transistor. Matching Properties of Deep Sub-Micron MOS Transistors is aimed at device physicists, characterization engineers, technology designers, circuit designers, or anybody else interested in the stochastic properties of the MOSFET.

Nano-CMOS Circuit and Physical Design

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Author :
Publisher : John Wiley & Sons
ISBN 13 : 0471678864
Total Pages : 413 pages
Book Rating : 4.4/5 (716 download)

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Book Synopsis Nano-CMOS Circuit and Physical Design by : Ban Wong

Download or read book Nano-CMOS Circuit and Physical Design written by Ban Wong and published by John Wiley & Sons. This book was released on 2005-04-08 with total page 413 pages. Available in PDF, EPUB and Kindle. Book excerpt: Based on the authors' expansive collection of notes taken over the years, Nano-CMOS Circuit and Physical Design bridges the gap between physical and circuit design and fabrication processing, manufacturability, and yield. This innovative book covers: process technology, including sub-wavelength optical lithography; impact of process scaling on circuit and physical implementation and low power with leaky transistors; and DFM, yield, and the impact of physical implementation.

MOSFET Modeling for Circuit Analysis and Design

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Publisher : World Scientific
ISBN 13 : 9812568107
Total Pages : 445 pages
Book Rating : 4.8/5 (125 download)

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Book Synopsis MOSFET Modeling for Circuit Analysis and Design by : Carlos Galup-Montoro

Download or read book MOSFET Modeling for Circuit Analysis and Design written by Carlos Galup-Montoro and published by World Scientific. This book was released on 2007 with total page 445 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach.Both an overview of the basic physics theory required to build compact MOSFET models and a unified treatment of inversion-charge and surface-potential models are provided. The needs of digital, analog and RF designers as regards the availability of simple equations for circuit designs are taken into account. Compact expressions for hand analysis or for automatic synthesis, valid in all operating regions, are presented throughout the book. All the main expressions for computer simulation used in the new generation compact models are derived.Since designers in advanced technologies are increasingly concerned with fluctuations, the modeling of fluctuations is strongly emphasized. A unified approach for both space (matching) and time (noise) fluctuations is introduced.

Transistor Level Modeling for Analog/RF IC Design

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Author :
Publisher : Springer Science & Business Media
ISBN 13 : 1402045565
Total Pages : 298 pages
Book Rating : 4.4/5 (2 download)

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Book Synopsis Transistor Level Modeling for Analog/RF IC Design by : Wladyslaw Grabinski

Download or read book Transistor Level Modeling for Analog/RF IC Design written by Wladyslaw Grabinski and published by Springer Science & Business Media. This book was released on 2006-07-01 with total page 298 pages. Available in PDF, EPUB and Kindle. Book excerpt: The editors and authors present a wealth of knowledge regarding the most relevant aspects in the field of MOS transistor modeling. The variety of subjects and the high quality of content of this volume make it a reference document for researchers and users of MOSFET devices and models. The book can be recommended to everyone who is involved in compact model developments, numerical TCAD modeling, parameter extraction, space-level simulation or model standardization. The book will appeal equally to PhD students who want to understand the ins and outs of MOSFETs as well as to modeling designers working in the analog and high-frequency areas.

SOI Circuit Design Concepts

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Publisher : Springer Science & Business Media
ISBN 13 : 0387740996
Total Pages : 232 pages
Book Rating : 4.3/5 (877 download)

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Book Synopsis SOI Circuit Design Concepts by : Kerry Bernstein

Download or read book SOI Circuit Design Concepts written by Kerry Bernstein and published by Springer Science & Business Media. This book was released on 2007-09-18 with total page 232 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book first introduces SOI device physics and its fundamental idiosyncrasies. It then walks the reader through realizations of these mechanisms, which are observed in common high-speed microprocessor designs. The book also offers rules of thumb and comparisons to conventional bulk CMOS to guide implementation and describes a number of unique circuit topologies that SOI supports.

Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications

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Author :
Publisher : Springer Science & Business Media
ISBN 13 : 9400776632
Total Pages : 203 pages
Book Rating : 4.4/5 (7 download)

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Book Synopsis Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications by : Jacopo Franco

Download or read book Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications written by Jacopo Franco and published by Springer Science & Business Media. This book was released on 2013-10-19 with total page 203 pages. Available in PDF, EPUB and Kindle. Book excerpt: Due to the ever increasing electric fields in scaled CMOS devices, reliability is becoming a showstopper for further scaled technology nodes. Although several groups have already demonstrated functional Si channel devices with aggressively scaled Equivalent Oxide Thickness (EOT) down to 5Å, a 10 year reliable device operation cannot be guaranteed anymore due to severe Negative Bias Temperature Instability. This book focuses on the reliability of the novel (Si)Ge channel quantum well pMOSFET technology. This technology is being considered for possible implementation in next CMOS technology nodes, thanks to its benefit in terms of carrier mobility and device threshold voltage tuning. We observe that it also opens a degree of freedom for device reliability optimization. By properly tuning the device gate stack, sufficiently reliable ultra-thin EOT devices with a 10 years lifetime at operating conditions are demonstrated. The extensive experimental datasets collected on a variety of processed 300mm wafers and presented here show the reliability improvement to be process - and architecture-independent and, as such, readily transferable to advanced device architectures as Tri-Gate (finFET) devices. We propose a physical model to understand the intrinsically superior reliability of the MOS system consisting of a Ge-based channel and a SiO2/HfO2 dielectric stack. The improved reliability properties here discussed strongly support (Si)Ge technology as a clear frontrunner for future CMOS technology nodes.

Charge-Based MOS Transistor Modeling

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Author :
Publisher : John Wiley & Sons
ISBN 13 : 0470855452
Total Pages : 328 pages
Book Rating : 4.4/5 (78 download)

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Book Synopsis Charge-Based MOS Transistor Modeling by : Christian C. Enz

Download or read book Charge-Based MOS Transistor Modeling written by Christian C. Enz and published by John Wiley & Sons. This book was released on 2006-08-14 with total page 328 pages. Available in PDF, EPUB and Kindle. Book excerpt: Modern, large-scale analog integrated circuits (ICs) are essentially composed of metal-oxide semiconductor (MOS) transistors and their interconnections. As technology scales down to deep sub-micron dimensions and supply voltage decreases to reduce power consumption, these complex analog circuits are even more dependent on the exact behavior of each transistor. High-performance analog circuit design requires a very detailed model of the transistor, describing accurately its static and dynamic behaviors, its noise and matching limitations and its temperature variations. The charge-based EKV (Enz-Krummenacher-Vittoz) MOS transistor model for IC design has been developed to provide a clear understanding of the device properties, without the use of complicated equations. All the static, dynamic, noise, non-quasi-static models are completely described in terms of the inversion charge at the source and at the drain taking advantage of the symmetry of the device. Thanks to its hierarchical structure, the model offers several coherent description levels, from basic hand calculation equations to complete computer simulation model. It is also compact, with a minimum number of process-dependant device parameters. Written by its developers, this book provides a comprehensive treatment of the EKV charge-based model of the MOS transistor for the design and simulation of low-power analog and RF ICs. Clearly split into three parts, the authors systematically examine: the basic long-channel intrinsic charge-based model, including all the fundamental aspects of the EKV MOST model such as the basic large-signal static model, the noise model, and a discussion of temperature effects and matching properties; the extended charge-based model, presenting important information for understanding the operation of deep-submicron devices; the high-frequency model, setting out a complete MOS transistor model required for designing RF CMOS integrated circuits. Practising engineers and circuit designers in the semiconductor device and electronics systems industry will find this book a valuable guide to the modelling of MOS transistors for integrated circuits. It is also a useful reference for advanced students in electrical and computer engineering.

Nano-scale CMOS Analog Circuits

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Author :
Publisher : CRC Press
ISBN 13 : 1466564288
Total Pages : 397 pages
Book Rating : 4.4/5 (665 download)

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Book Synopsis Nano-scale CMOS Analog Circuits by : Soumya Pandit

Download or read book Nano-scale CMOS Analog Circuits written by Soumya Pandit and published by CRC Press. This book was released on 2018-09-03 with total page 397 pages. Available in PDF, EPUB and Kindle. Book excerpt: Reliability concerns and the limitations of process technology can sometimes restrict the innovation process involved in designing nano-scale analog circuits. The success of nano-scale analog circuit design requires repeat experimentation, correct analysis of the device physics, process technology, and adequate use of the knowledge database. Starting with the basics, Nano-Scale CMOS Analog Circuits: Models and CAD Techniques for High-Level Design introduces the essential fundamental concepts for designing analog circuits with optimal performances. This book explains the links between the physics and technology of scaled MOS transistors and the design and simulation of nano-scale analog circuits. It also explores the development of structured computer-aided design (CAD) techniques for architecture-level and circuit-level design of analog circuits. The book outlines the general trends of technology scaling with respect to device geometry, process parameters, and supply voltage. It describes models and optimization techniques, as well as the compact modeling of scaled MOS transistors for VLSI circuit simulation. • Includes two learning-based methods: the artificial neural network (ANN) and the least-squares support vector machine (LS-SVM) method • Provides case studies demonstrating the practical use of these two methods • Explores circuit sizing and specification translation tasks • Introduces the particle swarm optimization technique and provides examples of sizing analog circuits • Discusses the advanced effects of scaled MOS transistors like narrow width effects, and vertical and lateral channel engineering Nano-Scale CMOS Analog Circuits: Models and CAD Techniques for High-Level Design describes the models and CAD techniques, explores the physics of MOS transistors, and considers the design challenges involving statistical variations of process technology parameters and reliability constraints related to circuit design.

CMOS

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Author :
Publisher : Wiley-IEEE Press
ISBN 13 :
Total Pages : 1088 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis CMOS by : R. Jacob Baker

Download or read book CMOS written by R. Jacob Baker and published by Wiley-IEEE Press. This book was released on 2005 with total page 1088 pages. Available in PDF, EPUB and Kindle. Book excerpt: As with the first edition of CMOS: Circuit Design, Layout, and Simulation, the book provides an important contemporary view of a wide range of analog/digital circuit blocks, the BSIM model, data converter architectures, and much more.

Planar Double-Gate Transistor

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Author :
Publisher : Springer Science & Business Media
ISBN 13 : 1402093411
Total Pages : 215 pages
Book Rating : 4.4/5 (2 download)

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Book Synopsis Planar Double-Gate Transistor by : Amara Amara

Download or read book Planar Double-Gate Transistor written by Amara Amara and published by Springer Science & Business Media. This book was released on 2009-01-16 with total page 215 pages. Available in PDF, EPUB and Kindle. Book excerpt: Until the 1990s, the reduction of the minimum feature sizes used to fabricate in- grated circuits, called “scaling”, has highlighted serious advantages as integration density, speed, power consumption, functionality and cost. Direct consequence was the decrease of cost-per-function, so the electronic productivity has largely progressed in this period. Another usually cited trend is the evolution of the in- gration density as expressed by the well-know Moore’s Law in 1975: the number of devices per chip doubles every 2 years. This evolution has allowed improving signi?cantly the circuit complexity, offering a great computing power in the case of microprocessor, for example. However, since few years, signi?cant issues appeared such as the increase of the circuit heating, device complexity, variability and dif?culties to improve the integration density. These new trends generate an important growth in development and production costs. Though is it, since 40 years, the evolution of the microelectronics always f- lowed the Moore’s law and each dif?culty has found a solution.

MOS/LSI Design and Application

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Author :
Publisher : McGraw-Hill Companies
ISBN 13 :
Total Pages : 356 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis MOS/LSI Design and Application by : William N. Carr

Download or read book MOS/LSI Design and Application written by William N. Carr and published by McGraw-Hill Companies. This book was released on 1972 with total page 356 pages. Available in PDF, EPUB and Kindle. Book excerpt: