Author : Ihsan Jahed Djomehri
Publisher :
ISBN 13 :
Total Pages : 139 pages
Book Rating : 4.:/5 (52 download)
Book Synopsis Comprehensive Inverse Modeling for the Study of Carrier Transport Models in Sub-50nm MOSFETs by : Ihsan Jahed Djomehri
Download or read book Comprehensive Inverse Modeling for the Study of Carrier Transport Models in Sub-50nm MOSFETs written by Ihsan Jahed Djomehri and published by . This book was released on 2002 with total page 139 pages. Available in PDF, EPUB and Kindle. Book excerpt: (Cont.) The important application of this technique is in the calibration of carrier transport models. With an accurate device topology, the transport model parameters can be adjusted to predict the onstate behavior. Utilizing a mobility model that conforms to the experimental effective field dependence and including a correction for parasitic resistance, the transport model for an advanced NMOS generation at various gate lengths and voltages is calibrated. Employing the Energy Balance model yields an energy relaxation value valid over all devices examined in this work. Furthermore, what has been learned from profile and transport calibration is used in investigating optimal paths for sub-20 nm MOSFET scaling. In a study of candidate architectures such as double-gate, single-gate, and bulk-Si, metrics for the power versus performance trade-off were developed. To conclude, the best trade-off was observed by scaling as a function of gate length with a single near-mid-gap workfunction.