Chemical Beam Epitaxial Regrowth, Etching, and Doping of III-V Compounds Using Novel Gas Sources for Applications of Heterojunction Bipolar Transistors

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Total Pages : 446 pages
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Book Synopsis Chemical Beam Epitaxial Regrowth, Etching, and Doping of III-V Compounds Using Novel Gas Sources for Applications of Heterojunction Bipolar Transistors by : Nein-Yi Li

Download or read book Chemical Beam Epitaxial Regrowth, Etching, and Doping of III-V Compounds Using Novel Gas Sources for Applications of Heterojunction Bipolar Transistors written by Nein-Yi Li and published by . This book was released on 1997 with total page 446 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Dissertation Abstracts International

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ISBN 13 :
Total Pages : 830 pages
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Physics Briefs

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ISBN 13 :
Total Pages : 1058 pages
Book Rating : 4.3/5 (91 download)

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Ceramic Abstracts

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ISBN 13 :
Total Pages : 1000 pages
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Electrical & Electronics Abstracts

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ISBN 13 :
Total Pages : 1860 pages
Book Rating : 4.3/5 (243 download)

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Download or read book Electrical & Electronics Abstracts written by and published by . This book was released on 1997 with total page 1860 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Topics in Growth and Device Processing of III-V Semiconductors

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Publisher : World Scientific
ISBN 13 : 9789810218843
Total Pages : 568 pages
Book Rating : 4.2/5 (188 download)

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Book Synopsis Topics in Growth and Device Processing of III-V Semiconductors by : S. J. Pearton

Download or read book Topics in Growth and Device Processing of III-V Semiconductors written by S. J. Pearton and published by World Scientific. This book was released on 1996 with total page 568 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes advanced epitaxial growth and self-aligned processing techniques for the fabrication of III-V semiconductor devices such as heterojunction bipolar transistors and high electron mobility transistors. It is the first book to describe the use of carbon-doping and low damage dry etching techniques that have proved indispensable in making reliable, high performance devices. These devices are used in many applications such as cordless telephones and high speed lightwave communication systems.

Proceedings of the ... IEEE International Caracas Conference on Devices, Circuits and Systems

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ISBN 13 :
Total Pages : 420 pages
Book Rating : 4.3/5 (91 download)

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International Aerospace Abstracts

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ISBN 13 :
Total Pages : 660 pages
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Proceedings of the 1995 First IEEE International Caracas Conference on Devices, Circuits and Systems

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Publisher : Institute of Electrical & Electronics Engineers(IEEE)
ISBN 13 :
Total Pages : 426 pages
Book Rating : 4.:/5 (318 download)

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Scientific and Technical Aerospace Reports

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ISBN 13 :
Total Pages : 1124 pages
Book Rating : 4.:/5 (31 download)

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Chemical Abstracts

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ISBN 13 :
Total Pages : 2692 pages
Book Rating : 4.3/5 (91 download)

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Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2692 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Metals Abstracts

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ISBN 13 :
Total Pages : 1306 pages
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The Journal of the Korean Physical Society

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ISBN 13 :
Total Pages : 424 pages
Book Rating : 4.6/5 (157 download)

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Download or read book The Journal of the Korean Physical Society written by and published by . This book was released on 2002 with total page 424 pages. Available in PDF, EPUB and Kindle. Book excerpt:

GaN and Related Materials

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Publisher : CRC Press
ISBN 13 : 1000448428
Total Pages : 556 pages
Book Rating : 4.0/5 (4 download)

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Book Synopsis GaN and Related Materials by : Stephen J. Pearton

Download or read book GaN and Related Materials written by Stephen J. Pearton and published by CRC Press. This book was released on 2021-10-08 with total page 556 pages. Available in PDF, EPUB and Kindle. Book excerpt: Presents views on current developments in heat and mass transfer research related to the modern development of heat exchangers. Devotes special attention to the different modes of heat and mass transfer mechanisms in relation to the new development of heat exchangers design. Dedicates particular attention to the future needs and demands for further development in heat and mass transfer. GaN and related materials are attracting tremendous interest for their applications to high-density optical data storage, blue/green diode lasers and LEDs, high-temperature electronics for high-power microwave applications, electronics for aerospace and automobiles, and stable passivation films for semiconductors. In addition, there is great scientific interest in the nitrides, because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. This series provides a forum for the latest research in this rapidly-changing field, offering readers a basic understanding of new developments in recent research. Series volumes feature a balance between original theoretical and experimental research in basic physics, device physics, novel materials and quantum structures, processing, and systems.

Science & Technology in Japan

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ISBN 13 :
Total Pages : 588 pages
Book Rating : 4.3/5 (243 download)

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The Engineering Index Annual

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ISBN 13 :
Total Pages : 2264 pages
Book Rating : 4.:/5 (319 download)

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Semiconductors — Basic Data

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Publisher : Springer Science & Business Media
ISBN 13 : 3642976751
Total Pages : 327 pages
Book Rating : 4.6/5 (429 download)

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Book Synopsis Semiconductors — Basic Data by : Otfried Madelung

Download or read book Semiconductors — Basic Data written by Otfried Madelung and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 327 pages. Available in PDF, EPUB and Kindle. Book excerpt: The frequent use of well known critical data handbooks like Beilstein, Gmelin and Landolt-Bomstein is impeded by the fact that merely larger libraries - often far away from the scientist's working place - can afford such precious collections. To satisfy an urgent need of many scientists working in the field of semiconductor physics for having at their working place a comprehensive, high quality, but cheap collection of at least the basic data of their field of interest this volume contains the most important data of semiconductors. All data were compiled from information on semiconductors presented on more than 6000 pages in various volumes of the New Series of Landolt-Bomstein. We hope to meet the needs of the community of semiconductor physicists with this volume, forming a bridge between the laboratory and additional information sources in the libraries. The Editor Marburg, January 1996 Table of contents A Introduction 1 General remarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 The corresponding Landolt-Bomstein volumes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 3 Physical quantities tabulated in this volume . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 B Physical data Elements of the IVth group and IV-IV compounds 1. 1 Diamond (C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 1. 2 Silicon (Si) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 1. 3 Germanium (Ge) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 1. 4 Grey tin (a-Sn) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42 1. 5 Silicon carbide (SiC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47 1. 6 Silicon germanium alloys (SixGel_x) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57 2 III-V compounds 2. 1 Boron nitride (BN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 2. 2 Boron phosphide (BP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 2. 3 Boron arsenide (BAs) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68 2. 4 Aluminium nitride (AIN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69 2. 5 Aluminium phosphide (AlP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72 2. 6 Aluminium arsenide (AlAs) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .