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Characterization Of Zns Thin Films Grown On The Basal Face Of Zn Single Crystals By Reactive Diffusion
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Book Synopsis Characterization of ZnS Thin Films Grown on the Basal Face of Zn Single Crystals by Reactive Diffusion by : Dave S. Gahunia
Download or read book Characterization of ZnS Thin Films Grown on the Basal Face of Zn Single Crystals by Reactive Diffusion written by Dave S. Gahunia and published by . This book was released on 1991 with total page 230 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Growth, Characterization and Applications of Zinc Sulfide Thin Films by Solution-Based Processes by : Dick Chiu
Download or read book Growth, Characterization and Applications of Zinc Sulfide Thin Films by Solution-Based Processes written by Dick Chiu and published by . This book was released on 2017 with total page 132 pages. Available in PDF, EPUB and Kindle. Book excerpt: Zinc Sulfide (ZnS) thin film, with a wide band gap, has been used for many applications, such as buffer layer for CIGS solar cells, light emitting diodes and thin film electroluminescent devices. In this work, ZnS thin films were prepared using two different deposition processes. In the first method, ZnS thin films were deposited by using conventional chemical bath deposition (CBD) process. Micro-reactor assisted solution deposition (MASD) with a flow cell was used as the second method. Growth kinetics of ZnS thin films in CBD was analyzed using in-situ quartz crystal microbalance measurements, and ex-situ transmission electron microscopy (TEM) and scanning electron microscopy (SEM) measurements. The results from the TEM and SEM measurements suggest that the film growth follows a two-step process with the formation of the nuclei in the solution first, attachment to the surface, followed by aggregation of nanoparticles into half spheres on the surface of the substrate and finally half spheres connect to the neighbor half spheres, thereby forming a continuous film. The mechanism study, verified by the SEM images, shows that nucleation starts very early in the CBD process. The degree of supersaturation influences the growth rate and final surface morphology. Temperature-dependent growth rate in the linear growth region follows the Arrhenius equation with an estimated value of activation energy (Ea) to be around 36 KJ/mol. This value, which is considered low (less than 40 kJ/mol), indicates that the rate limiting step is more likely to be a physical process such as adsorption or diffusion, rather than a chemical process, which tends to have higher activation energies. In our study, the chemical bath is vigorously stirred so that the rate-limiting step is likely controlled by a physically adsorption mechanism. The continuous flow micro reactor was used to deposit ZnS thin films using various flow cells of different designs. The depositions were carried out on display glass of 1 inch wide by 3 inches long. Both analytical equations (Hagen-Poiseuille) and computational fluid dynamics were applied to determine proper height for the flow channel. COMSOL Multiphysics simulation of fluid flow along with particle tracer was carried out to find an optimum cut out radius for further study. The film thickness growth kinetics and solute concentration near the substrate surface was simulated using the COMSOL Multiphysics program with an assumption of laminar flow, transport of diluted species and a simplified first order reaction. An insert that mimics a cut out radius of 2.31 inches was fabricated using a 3D printer and installed in the flow cell to deposit ZnS thin films. ZnS thin films deposited using the flow cells with and without the 3D printed insert were investigated. The results were analyzed using plane-view and cross-sectional SEM images. The film thickness was determined by cross-sectional SEM image. The results indicated that the thickness uniformity was improved with the 3D printed insert. We found toward the end of the substrate, the ZnS thin film was not continuous due to the lower solution concentration caused by the depletion of reactants. New flow cell designs were proposed and COMSOL simulation was performed to examine the effectiveness of these flow cells. To demonstrate the utility of the ZnS thin films by solution-based processes, SnS and CuS thin films were deposited on top of the ZnS thin film to form SnS/CuS/ZnS layered precursor film then followed by selenziation at various temperatures in an attempt to produce CZTSSe absorber layers for CZTSSe thin film solar cells.
Book Synopsis Радиобиология и радиационная медицина by :
Download or read book Радиобиология и радиационная медицина written by and published by . This book was released on 1959 with total page 429 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Electrical Characterization of ZnO thin films grown by molecular beam epitaxy by : Vladimir Petukhov
Download or read book Electrical Characterization of ZnO thin films grown by molecular beam epitaxy written by Vladimir Petukhov and published by Cuvillier Verlag. This book was released on 2012-04-25 with total page 112 pages. Available in PDF, EPUB and Kindle. Book excerpt: For the electronic and optoelectronic device realization a precise control of the electrical properties in the utilized material is a very important issue. Doping profiles in realized p-njunctions influence the functionality of the devices. The morphological and crystal properties of a device material directly influence the electrical ones. Dislocations present in a region of p-n-junctions can short circuit them leading to malfunctions. Too rough surfaces during epitaxial growth could lead to inhomogeneities in a single or multiple quantum wells and superlattices. The main goal of the present work was to provide the basis for a reliable p-type doping of ZnO grown by molecular beam epitaxy. Firstly, the well established heteroepitaxial growth on c-sapphire substrates has been employed. Based on the theoretical and experimental works, suggesting nitrogen to be the impurity that builds the most shallow acceptor level in ZnO comparing to other group-V elements, it has been implied as a dopant. To generate reactive nitrogen atoms an rf-plasma source has been utilized in the MBE process. The resulting samples have been characterized by such methods as AFM, XRD, TEM, PL spectroscopy, temperature domain Hall measurements (TDHM) and ECV-profiling. First results of TDHM have shown that even in undoped samples the temperature dependencies of the electron mobility and carrier concentration have regions which are difficult to interpret. It is necessary to fit them with theoretical curves in order to extract the correct values. This task has proven to be very difficult. The complicated character of the dependencies has been explained in terms of the multilayer conduction model dividing a layer in thin interfacial region with mobility and carrier concentration μ1 and n1 respectivly and bulk region with a higher mobility μ2 and lower carrier concentration n2. The electrical transport in the bulk region has been modeled in terms of the general scattering theory in polar semiconductors. Such scattering mechanisms as scattering on polar-optical phonons, piezoelectric phonons, acoustic deformation potential, strain induced fields, dislocations, ionized and neutral impurities have been taken into account. Two cases have been considered to model transport in the interfacial region: 1) transport takes place in the conduction band of a highly doped degenerate semiconductor; 2) transport takes place in the impurity band formed by intermediate concentration of impurities and in conduction band in parallel. In the second case transport at the interface in conduction band has been neglected in the region of the low temperatures due to the impurities freeze-out and carrier concentration has been taken temperature independent like in the first case. To investigate experimentally the transport character in these two regions independently a mobility-spectrum analysis has been conducted. Theoretical results utilizing the two models have been compared with experimentally extracted mobility and carrier concentration in the interfacial region. It has been concluded that the concentration of donors in the layers is not high enough for the impurity band to merge with the conduction band and the second model is more consistent. The theoretically acquired donor concentration profiles have been compared with ECV-profiles. The agreement is very good. Simulations have revealed a shallow donor state with the ionization energy of approximately 45 meV . In the literature, this donor state in ZnO is attributed to hydrogen. However, due to the high diffusion mobility of hydrogen in ZnO, an annealing process would obviously decrease the carrier concentration in the samples which has not been the case. It has been suggested that the main donor centers are the electrically active crystal point defects generated by dislocations. Layers doped with nitrogen have been grown at very low temperatures (≈ 200°C) and at temperatures ranging from 400°C to 500°C, which are optimal for the epitaxial growth of ZnO. The samples grown at low temperatures are single crystalline with mosaic structure. In both cases, the introduction of the dopant increased the carrier concentration. This has been accounted for a bad crystal quality resulting in the inhomogeneous incorporation of nitrogen and for high background donor concentration due to the high dislocations densities. Additionally, the incorporation of acceptor centers shifts the Fermi-level increasing the formation probability of the compensating point defects. The analysis of TDHM showed an inconsistency of the one donor level model in the case of nitrogen doped samples. This fact and the decrease in the carrier concentration after annealing at 800°C for 30 minutes in ambient air can be explained by nitrogen forming donor-like defect complexes. In an attempt to improve the crystal quality of the heteroepitaxial layers, 15 periods of a ZnO/Zn0.6Mg0.4O superlattice structure have been inserted between the conventional double HT-MgO/LT-ZnO buffer and a main HT-ZnO layer. TDHM has revealed a very high mobility close to the values measured in a bulk ZnO for the temperature range of 20 - 300 K. However, TEM investigations of the samples have not indicated any decrease in the dislocation density comparing with the similar samples without a superlattice. Such a high mobility has been attributed to an electron transport in the superlattice structure. Heteroepitaxial growth of high quality ZnO-layers has proven to be challenging leaving the homoepitaxial growth as the only possibility to obtain the epitaxial layers with the best structural and electrical properties. The hydrothermally grown bulk ZnO substrates from two supplying companies, CrysTec and TokyoDenpa, have been employed for homoepitaxy. The substrates from CrysTec have not been epi-ready. Although AFM images reveal very flat surface, this has been damaged by the process of the chemomechanical polishing. This damaged layer must be removed. This has been achieved by the thermal annealing for 3 hours at 1050°C in ambient air. The thermally treated surfaces resulted in atomically flat terraces. XRD measurements have indicated an improvement of the crystal quality after annealing. The resistivity of the bulk substrates decreased after the thermal treatment due to out-diffusion of the compensating Li atoms letting Al, Ga and In atoms to contribute to conduction. After the longer annealing processes the etch-pits have been discovered on O-polar faces. The same features could be achieved by the chemical etching in a nitric acid on Zn-polar faces. The density of the threading dislocations on both polar faces for both types of substrates calculated by the etch-pit density investigation is about 105 1/cm2. Further the thermally treated substrates with atomically flat terraces have been utilized for homoepitaxy. The differences in growth kinetics during the molecular beam epitaxy on such substrates with the improved surface quality depending on their polarity have been investigated by RHEED measurements. The growth on a Zn-polar face has a 3D-character independently on a supplier. Morphologies of the resulting O- and Zn-polar layers have shown to be different. This has been explained by the presence of dangling bonds on Opolar face and thus, shorter diffusion time of the impinging Zn atoms on the surface. XRD and TEM measurements have shown a perfect crystal quality of the overgrown layers. The PL spectra of homoepitaxial layers are governed by the donor impurities diffused from the substrates. Considering the SIMS measurements of homoepitaxial layers found in the literature it has been concluded that the diffusion of donors in the layers grown on Zn-polar faces takes less effect then for the O-polar films. This conclusion has enforced the utilization of Zn-polar substrates supplied by CrysTec for the experiments with nitrogen doping of ZnO because of their affordable price. The electrical properties measured by ECV-profiling in series of homoepitaxial layers with varied growth parameters have shown an increase of the carrier concentration with the nitrogen incorporation. In addition, it has also been shown that the resulting electrical properties near the interface are governed mostly by the initial properties of the substrates. With increasing thickness of the layers carrier concentration saturated to the values of around 1016 1/cm3. The recent successful realization of the p-type MgZnO layers on TokyoDenpa substrates by researchers from Japan suggests switching to the p-type doped alloys because the above discussed results indicate that p-type doping with nitrogen of a pure ZnO is very difficult or even impossible. This is due to a rather fundamental reason: the formation of the compensating donor centers with the incorporation of acceptor atoms. As the first step in the future works, it is obvious to try to reproduce the results of the ZnMgO p-type doping with nitrogen employing growth on ZnO substrates.
Book Synopsis Zinc Oxide Bulk, Thin Films and Nanostructures by : Chennupati Jagadish
Download or read book Zinc Oxide Bulk, Thin Films and Nanostructures written by Chennupati Jagadish and published by Elsevier. This book was released on 2011-10-10 with total page 600 pages. Available in PDF, EPUB and Kindle. Book excerpt: With an in-depth exploration of the following topics, this book covers the broad uses of zinc oxide within the fields of materials science and engineering:- Recent advances in bulk , thin film and nanowire growth of ZnO (including MBE, MOCVD and PLD), - The characterization of the resulting material (including the related ternary systems ZgMgO and ZnCdO), - Improvements in device processing modules (including ion implantation for doping and isolation ,Ohmic and Schottky contacts , wet and dry etching), - The role of impurities and defects on materials properties - Applications of ZnO in UV light emitters/detectors, gas, biological and chemical-sensing, transparent electronics, spintronics and thin film
Book Synopsis Characterization of ZnS Thin Films Grown by MOCVD by : Jie Fang
Download or read book Characterization of ZnS Thin Films Grown by MOCVD written by Jie Fang and published by . This book was released on 1992 with total page 188 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Development of in situ methods for process monitoring and control and characterization of Cu-Zn-Sn-S based thin films by : Van Duren, Stephan
Download or read book Development of in situ methods for process monitoring and control and characterization of Cu-Zn-Sn-S based thin films written by Van Duren, Stephan and published by Universitätsverlag der TU Berlin. This book was released on 2019-06-03 with total page 188 pages. Available in PDF, EPUB and Kindle. Book excerpt: In recent years, kesterite Cu2ZnSnS4 (CZTS) has become an interesting alternative to copper indium gallium (di)selenide (CIGS) due to its non-toxic and earth abundant constituents. A variety of methods is being used to fabricate kesterite thin films, such as coevaporation, sputtering, electrodeposition, spray pyrolysis and others. Most of them include an annealing step to stimulate elemental mixing and interdiffusion. Although conversion efficiencies of kesterite solar cells have increased among different research groups, the record value of 12.6% set by IBM in 2014 has not been broken yet. Therefore, experimental and theoretical studies are needed to predict the effect of the secondary phases and detrimental defects on the electronical properties of the CZTS based solar devices. The work presented here studies non-destructive techniques for in situ process control and monitoring. With the aim to detect phases and phase transitions to optimize crucial processing steps such as pre-annealing of metal precursors, high temperature annealing and vacuum deposition of Cu-Sn-Zn-S based thin films. The research consists of three parts in which Raman spectroscopy, X-ray diffraction (XRD) and reflectometry are used to explore this objective. In the first part Raman spectroscopy is investigated as an in situ monitoring technique during high temperature annealing of thin films. It investigates whether the occurrence of CZTS can be monitored when it is created from annealing a Mo/CTS/ZnS layered thin film. CuS, SnS, ZnS and CTS (Cu-Sn-S) films are prepared by physical vapor deposition. The Raman scattering intensity was compared to investigate whether their specific vibrational modes can be distinguished from each other at room temperature. Then, the CTS film is annealed between 50 and 550 °C in order to investigate whether CTS vibrational modes can be identified at elevated temperatures and to see which transitions take place within the thin film. Also, a CZTS reference film is annealed between 50 and 550 °C for reference purposes. The temperature dependence of the main CZTS modes is examined to investigate whether it can be used for in situ temperature control. Finally, a ZnS layer is deposited on the unannealed CTS film to obtain a Mo/CTS/ZnS layered film. This film is used to study the conversion of CTS/ZnS into CZTS at elevated temperatures. It was found that Raman spectroscopy can successfully be used to monitor formation of CZTS by identifying its main vibrational mode during the annealing process. The intensity of the CTS modes reduces at elevated temperatures. At 450 °C, the main CZTS mode at 338 cm-1 can be clearly identified. The second part also focuses on high temperature annealing. However, in this part the focus lies on annealing of the metal precursor films. It is explored whether specific alloys benefit or hinder the formation of secondary phases during formation of the CZTS absorber films. Also, to what extent this influences solar cell performance. In situ XRD was investigated for in situ monitoring of the pre-annealing process. Cu-poor metal precursor films are prepared by sputtering deposition. The precursors are annealed at 150 °C, 200 °C, 300 °C and 450 °C in a three zone tube furnace. The effect on the structural properties is analysed by XRD to study the formation mechanism of alloys. The precursor films are then sulfurized in a three zone tube furnace. The structural properties of the absorber are analysed and correlated with structures in the precursor. It is found that formation of SnS2 in the absorber is proportional to the remaining Sn in the pre-annealed precursor. Also, electron micrographs showed that pre-annealing temperature influences grain growth and surface precipitation of Sn-S and Zn-S. Pre-annealed absorbers at 450 °C did not exhibit these phases on the surface. Solar devices are fabricated from the absorber films and best performing devices were obtained from pre-annealed absorbers at 450 °C. They showed absence of Sn and SnS2 in, respectively, the precursor and absorber. It could be concluded that SnS2 phases are detrimental to device efficiency and that SnS2 XRD peak intensity follows an inverse proportionality with device efficiency. The third part explores reflectometry as a method to monitor a growing film during thermal evaporation in a physical vapor deposition (PVD) system. A set of six CZTS absorbers is examined by ex situ Raman spectroscopy and reflectometry to study the influence of secondary phases CuS and ZnS on reflection spectra. Composition strongly influences reflection spectra and CuS leaves a characteristic dip in the reflection spectrum at about 600 nm. An integration method was used to analyze this phenomenon quantitatively. Subsequently, a reflectometry setup is designed, developed and integrated in the PVD system. Four different CZTS co-evaporated and multi-layered films are deposited. Structural, morphological and vibrational properties are investigated. The reflection spectra are monitored during deposition and time-dependent reflection spectra are analyzed for characteristic aspects related to properties such as thickness, band gap and phase formation. CuS could not be detected in the films by the integration method due to the superposition of the CuS dip with developing interference fringes during film growth. However, in multilayered CTS/ZnS film it is found that the onset of ZnS deposition can be detected by increased reflection intensity due to reduced surface roughness. Additionally, the shifting onset of the interference fringes to lower photon energies can be used as a characteristic fingerprint during the deposition process. In conclusion, this work showed that Raman spectroscopy, XRD and reflectometry could be successfully implemented for in situ process control and monitoring of high temperature annealing and vacuum deposition of Cu-Sn-Zn-S based precursors and absorbers. The application of these in situ techniques can lead to the optimization of thin film material properties and solar cells. As such, this study has paved the way for further improvement of Cu-Sn-Zn-S based precursors and thin film absorbers. Innerhalb der letzten Jahre hat sich Kesterit Cu2ZnSnS4 (CZTS) aufgrund seiner ungiftigen Bestandteile und deren hoher Verfügbarkeit zu einer interessanten Alternative zu Kupfer Indium Gallium (di-)Selenid (CIGS) entwickelt. Zur Herstellung von Kesterit Dünnschichten wird eine Vielzahl von Methoden verwendet wie Ko-Verdampfung, Sputtern, Elektrodeposition, Spray Pyrolyse und andere. Die meisten davon beinhalten einen Temper-Schritt um die Durchmischung und Interdiffusion der Elemente zu stimulieren. Obwohl der Wirkungsgrad der Kersterit Solarzellen von verschiedenen Forschungsgruppen erhöht wurde, ist der Rekordwert von IBM von 12,6 % noch nicht gebrochen worden. Daher werden experimentelle und theoretische Studien benötigt, die den Einfluss von Fremdphasen und schädlichen Defekten auf die elektronischen Eigenschaften der CZTS Solarzellen vorhersagen. Die vorliegende Arbeit untersucht zerstörungsfreie Methoden für die in situ Prozesskontrolle und -überwachung. Dabei ist das Ziel, entscheidende Prozessschritte wie das Vortempern der Metall-Vorläufer sowie das Hochtemperatur-Tempern und die Vakuum-Abscheidung von Cu-Sn-Zn-S basierten Schichten zu optimieren. Die Untersuchung besteht aus drei Teilen, in denen Raman-Spektroskopie, Röntgendiffraktion (XRD) und Reflektometrie benutzt werden um dieses Ziel zu erreichen. Im ersten Teil wird die Ramanspektroskopie als in situ Methode zur Überwachung des Hochtemperatur-Temperns von Dünnschichten betrachtet. Es wird untersucht, ob das Entstehen von CZTS beim Tempern von gestapelten Mo/CTS/ZnS Dünnschichten beobachtet werden kann. CuS, SnS, ZnS und CTS (Cu-Sn-S) Schichten werden durch physikalische Gasabscheidung hergestellt. Die Intensität der Raman Streuung wurde vergleichen um zu untersuchen, ob die spezifischen Vibrations-Moden bei Raumtemperatur voneinander unterschieden werden können. Dann werden die CTS Schichten zwischen 50 °C und 550 °C getempert um zu untersuchen, ob die CTS Vibrations-Moden bei höheren Temperaturen identifiziert werden können und um festzustellen, welche Übergänge innerhalb der Schicht auftreten. Außerdem wurde eine CZTS Referenzschicht zwischen 50 °C und 550 °C für Referenzzwecke getempert worden. Die Temperaturabhängigkeit der CZTS Haupt-Moden werden betrachtet, um zu untersuche, ob sie für die in situ Temperaturüberwachung verwendet werden können. Abschließend wurde eine ZnS Schicht auf einem nicht getemperten CTS Film abgeschieden, um eine gestapelte Mo/CTS/ZnS Schicht zu erhalten. Diese Schicht wird verwendet, um die Umwandlung von CTS/ZnS zu CZTS bei erhöhten Temperaturen zu untersuchen. Es wurde festgestellt, dass Raman Spektroskopie erfolgreich verwendet werden kann, um die Bildung von CZTS zu überwachen, indem die Haupt-Vibrations-Moden während des Temperns identifiziert werden. Die Intensität der CTS Moden verringert sich bei höheren Temperaturen. Bei 450 °C kann die CZTS Hauptmode bei 338 cm-1 klar identifiziert werden. Der zweite Teil konzentriert sich ebenfalls auf das Hochtemperatur-Tempern. In diesem Teil liegt der Fokus allerdings auf dem Tempern der Metal-Vorläufer-Schichten. Es wird erforscht, ob bestimmte Legierungen die Entstehung von Fremdphasen während der Entstehung der CZTS Absorberschichten begünstigen oder hemmen und welchen Einfluss dies auf die Leistung der Solarzelle hat. In situ XRD wird verwendet, um die Prozesse des Vortemperns zu überwachen. Kupfer arme Metall-Vorläufer-Schichten werden durch Sputtern aufgetragen. Die Vorläufer werden bei 150 °C, 200 °C, 300 °C und 450 °C in einem Drei-Zonen-Röhren-Ofen getempert. Die Auswirkungen auf die strukturellen Eigenschaften werden mit XRD analysiert, um den Entstehungsmechanismus der Legierungen zu untersuchen. Die Vorläuferschichten werden dann in einem Drei-Zonen-Röhren-Ofen sulfurisiert. Die strukturellen Eigenschaften des Absorbers werden analysiert und mit der Struktur der Vorläufer korreliert. Es wurde festgestellt, dass die Entstehung von SnS2 im Absorber proportional zum verbleibenden Sn im vorgetemperten Vorläufer ist. Außerdem zeigen Bilder des Rasterelektronenmikroskops, dass die Temperatur des Vortemperns das Kornwachstum und das Abschieden von Sn-S und Zn-S an der Oberfläche beeinflusst. Bei 450 °C vorgetemperte Absorber weisen keine dieser Phasen an der Oberfläche auf. Solarzellen werden aus diesen Absorber-Schichten hergestellt und die besten Zellen entstanden aus den bei 450 °C vorgetemperten Absorbern. Bei diesen traten Sn und SnS2 weder im Vorläufer noch im Absorber auf. Es konnte geschlussfolgert werden, dass SnS2 Phasen schädlich für den Wirkungsgrad der Zellen sind und dass die Intensität der SnS2 XRD Peaks invers proportional zum Wirkungsgrad der Zellen ist. Der dritte Teil erforscht die Reflektometrie als Methode zur Überwachung des Schichtwachstums während des thermischen Verdampfens in einer Anlage zur physikalischen Gasabscheidung (PVD). Ein Satz aus sechs CZTS Absorbern wird mittels ex situ Raman-Spektroskopie und Reflektometrie vermessen, um den Einfluss der Fremdphasen CuS und ZnS auf die Reflexionsspektren zu untersuchen. Die Zusammensetzung beeinflusst die Reflexionsspektren stark und CuS hinterlässt eine charakteristische Senkung bei 600 nm im Reflexionsspektrum. Eine Integrationsmethode wurde verwendet um dieses Phänomen quantitativ zu analysieren. Anschließend wurde ein Reflektometrieaufbau entworfen, entwickelt und in die PVD-Anlage integriert. Vier verschiedene CZTS koverdampfte und Mehrschicht-Filme wurden abgeschieden. Strukturelle, morphologische und Vibrationseigenschaften werden untersucht. Die Reflexionsspektren werden während des Abscheidens aufgenommen und zeitabhängige Reflexionsspektren werden auf charakteristische Aspekte im Zusammenhang mit Eigenschaften wie Dicke, Bandlücke und Entstehung von Phasen untersucht. CuS konnte in den Schichten mit der Integrations-Methode wegen der Überlagerung der CuS Senkung mit dem entstehenden Interferenzmuster nicht detektiert werden. Allerdings wurde in gestapelten CTS/ZnS Schichten beobachtet werden, dass der Beginn der ZnS Abscheidung durch eine ansteigende Intensität der Reflektion aufgrund der verringerten Oberflächenrauigkeit detektiert werden kann. Zusätzlich kann die Verschiebung des Startpunkts der Interferenzen zu niedrigeren Photonenenergien als charakteristischer Fingerabdruck während des Abscheidungsprozesses verwendet werden. Zusammenfassend zeigt diese Arbeit, dass Raman-Spektroskopie, XRD und Reflektrometrie erfolgreich als in situ Prozesskontrolle und –überwachung bei Hochtemperatur-Tempern und Vakuum-Abscheidung von Cu-Sn-Zn-S basierten Vorläufern und Absorbern realisiert werden konnten. Die Anwendung dieser in situ Techniken kann zu einer Optimierung der Eigenschaften von Dünnschicht-Materialien und von Solarzellen führen. Als solche hat diese Untersuchung den Weg für weitere Verbesserung von Cu-Sn-Zn-S basierte Vorläufer und Dünnschicht-Absorber geebnet.
Book Synopsis Structural and Optical Properties of ZnS Thin Films by : Hamza Bakr
Download or read book Structural and Optical Properties of ZnS Thin Films written by Hamza Bakr and published by LAP Lambert Academic Publishing. This book was released on 2014-08-08 with total page 64 pages. Available in PDF, EPUB and Kindle. Book excerpt: The II - VI semiconductors, such as Zinc Sulphide (ZnS) have attracted growing interest owing to their possible application in electro-optic device, it is important semiconductor material for the development of various modern technologies of solid - state devices. Zinc Sulphide have wide direct band gap of about (3.50 -4.1) eV in the UV region; it is used as a key material for blue light emitting diodes and other optoelectronic devices such as cathodluminescent displays, multilayer dielectric filters, electroluminescent displays and multilayer dielectric filters. Zinc Sulpide is highly studied as a window layer in hetrojunction photovoltaic solar cells because the wide band decreases the window absorption loss and improve the short circuit current of the cell. In the area of optics ZnS can be used as reflector, because of it's high visible range. There have been various studies on the bulk and thin film characteristics of ZnS including optical and electrical properties. Zinc sulfide has two types of crystal structures; hexagonal wurtzite and cubic zinc blende, it has a cubic crystal structure in its most stable state.
Book Synopsis The Successive Ionic Layer Adsorption and Reaction (SILAR) Growth and Characterization of ZnS and ZnS:Mn Thin Films by : Seppo Lindroos
Download or read book The Successive Ionic Layer Adsorption and Reaction (SILAR) Growth and Characterization of ZnS and ZnS:Mn Thin Films written by Seppo Lindroos and published by . This book was released on 1997 with total page 47 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :Sanders, Brian Wayne Publisher :National Library of Canada = Bibliothèque nationale du Canada ISBN 13 :9780315762718 Total Pages :181 pages Book Rating :4.7/5 (627 download)
Book Synopsis Growth and Characterization of Electrodeposited Zinc Sulphide and Chemical Vapour Atomic Layer Deposited Zinc Oxide, Sulphide, and Oxysulphide Thin Films [microform] by : Sanders, Brian Wayne
Download or read book Growth and Characterization of Electrodeposited Zinc Sulphide and Chemical Vapour Atomic Layer Deposited Zinc Oxide, Sulphide, and Oxysulphide Thin Films [microform] written by Sanders, Brian Wayne and published by National Library of Canada = Bibliothèque nationale du Canada. This book was released on 1991 with total page 181 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Studies and Characterization of ZnS Thin Films by : Arunkumar Alagesan
Download or read book Studies and Characterization of ZnS Thin Films written by Arunkumar Alagesan and published by LAP Lambert Academic Publishing. This book was released on 2017-06-19 with total page 60 pages. Available in PDF, EPUB and Kindle. Book excerpt: The II-VI compound semiconductors are of great importance due to their application in various electro-optic devices. Thin films of ZnS find many more applications in the area of opto electronic device fabrication like UV light emitting diodes, blue light emitting diodes, emissive flat screens, electroluminescent devices and antireflection coating in solar cell technology. Several methods have been used to prepare ZnS thin films. We have deposited ZnS films using chemical bath deposition method using sodium hydroxide as a complexing agent. The structural and morphological characteristics of films have been investigated by X-ray diffraction (XRD) and scanning electron microscope. XRD shows deposited film was polycrystalline nature with cubic structure. The grain size is estimated to be in the range of 35-70 nm. The crystallinity of the ZnS film was analysed by HRTEM with the help of the electron diffraction pattern. The films show good optical properties with high transmittance in the visible region and the band gap value were found 3.3 eV - 2.1 eV. ZnS films can be used as buffer layers on CdTe solar cells.
Book Synopsis Elaboration, Characterization and Design of ZnS Thin Films for Optoelectronic Applications by : Abdelhak Jrad
Download or read book Elaboration, Characterization and Design of ZnS Thin Films for Optoelectronic Applications written by Abdelhak Jrad and published by . This book was released on 2017 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Zinc sulfide is one of the first semiconductors discovered. It has great potential application thanks to its physicochemical properties. It is used extensively in optoelectronic, photocatalytic and gas detection applications. In particular, it is used for photovoltaic applications. In this work, the effect of doping by transition metals (manganese, cobalt and copper) on the structural, microstructural, morphological, optical, electrical and magnetic properties of zinc sulfide thin films prepared by chemical bath deposition (CBD) technique are studied by X-ray diffraction, X-ray photoelectron spectroscopy, Raman spectroscopy, infrared spectroscopy, scanning electron microscopy, UV-VIS-NIR spectrophotometry, Hall effect and SQUID. The modeling and optimization of higher efficiency Cu(In,Ga)Se2 solar cells are also investigated in this thesis for various layers thickness by using Silvaco ATLAS.
Book Synopsis Growth and Characterization of Nickel-Doped ZnS Single Crystals by :
Download or read book Growth and Characterization of Nickel-Doped ZnS Single Crystals written by and published by . This book was released on 1988 with total page 8 pages. Available in PDF, EPUB and Kindle. Book excerpt: Crystals of zinc sulfide containing up to 3 atomic percent of nickel were grown by chemical vapor transport using iodine as the transport agent. It was found that these crystals had the same long-wavelength IR transmission characteristics as pure ZnS. Furthermore, the addition of small amounts of nickel significantly increased the hardness of ZnS. These materials may be useful for the development of IR windows in the 8-12 micrometer range. Infrared transmission.
Book Synopsis Epitaxial Growth and Characterization of Zn(Mg)O Thin Films by : Thomas Andreas Wassner
Download or read book Epitaxial Growth and Characterization of Zn(Mg)O Thin Films written by Thomas Andreas Wassner and published by . This book was released on 2012 with total page 225 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book ZnO Thin Films written by Paolo Mele and published by Nova Science Publishers. This book was released on 2019 with total page 318 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Zinc oxide (ZnO) is an n-type semiconductor with versatile applications such as optical devices in ultraviolet region, piezoelectric transducers, transparent electrode for solar cells and gas sensors. This book "ZnO Thin Films: Properties, Performance and Applications" gives a deep insight in the intriguing science of zinc oxide thin films. It is devoted to cover the most recent advances and reviews the state of the art of ZnO thin films applications involving energy harvesting, microelectronics, magnetic devices, photocatalysis, photovoltaics, optics, thermoelectricity, piezoelectricity, electrochemistry, temperature sensing. It serves as a fundamental information source on the techniques and methodologies involved in zinc oxide thin films growth, characterization, post-deposition plasma treatments and device processing. This book will be invaluable to the experts to consolidate their knowledge and provide insight and inspiration to beginners wishing to learn about zinc oxide thin films"--
Book Synopsis The Crystal Growth and Characterization of the Solid Solutions (ZnS)1- X(CuMS2)x by :
Download or read book The Crystal Growth and Characterization of the Solid Solutions (ZnS)1- X(CuMS2)x written by and published by . This book was released on 1992 with total page 19 pages. Available in PDF, EPUB and Kindle. Book excerpt: Polycrystalline samples of members of the systems (ZnS)1-x(CuMS2)x(M = A1, In or Fe) were prepared by direct combination of the elements. Single crystals have been grown by chemical vapor transport using iodine as the transport agent. They all crystallize with the zinc blende structure. Their IR transmission range is narrower than that observed for pure Zinc Sulfide, but all, except for the ZnS-CuInS2 system, still show good transmission in the long wavelength IR range. The addition of small amounts of I-III-VI2 modifies the hardness and the thermal stability of ZnS. Zinc Sulfide has been studied extensively because it offers a variety of unique device applications. ZnS crystallizes with the cubic zinc blende structure below 1020 C and with the hexagonal wurtzite structure above this phase transition temperature. The ternary chalcogenides, CuMS2(M = A1, Ga, In or Fe) crystallize with the chalcopyrite structure, which is closely related to the cubic zince blende structure. In the chalcopyrite structure, there is an ordering of Cu(I) and M(III) (M = A1, Ga, In Or Fe) which results in a doubling of the c-axis. There have been relatively few studies carried out on the preparation and characterization of solid solutions formed between ZnS and CuMS2(M = A1, Ga, In or Fe).
Book Synopsis ZnO Based Thin Films, Nano-Wires, and Nano-Belts for Photonic and Electronic Devices and Sensors by : Fan Ren
Download or read book ZnO Based Thin Films, Nano-Wires, and Nano-Belts for Photonic and Electronic Devices and Sensors written by Fan Ren and published by The Electrochemical Society. This book was released on 2008-10 with total page 127 pages. Available in PDF, EPUB and Kindle. Book excerpt: The papers included in this issue of ECS Transactions were originally presented in the symposium ¿ZnO Based Thin Films, Nano-Wires, and Nano-Belts for Photonic and Electronic Devices and Sensors¿, during the PRiME 2008 meeting, held in Honolulu, Hawaii, from October 12 to 17, 2008.
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