Characterization Of Si1 Xgex Si Alloys And Heterostructure Devices

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SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices

Author : John D. Cressler
Publisher : CRC Press
ISBN 13 : 1351834797
Total Pages : 373 pages
Book Rating : 4.3/5 (518 download)

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Book Synopsis SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices by : John D. Cressler

Download or read book SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices written by John D. Cressler and published by CRC Press. This book was released on 2017-12-19 with total page 373 pages. Available in PDF, EPUB and Kindle. Book excerpt: What seems routine today was not always so. The field of Si-based heterostructures rests solidly on the shoulders of materials scientists and crystal growers, those purveyors of the semiconductor “black arts” associated with the deposition of pristine films of nanoscale dimensionality onto enormous Si wafers with near infinite precision. We can now grow near-defect free, nanoscale films of Si and SiGe strained-layer epitaxy compatible with conventional high-volume silicon integrated circuit manufacturing. SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices tells the materials side of the story and details the many advances in the Si-SiGe strained-layer epitaxy for device applications. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume defines and details the many advances in the Si/SiGe strained-layer epitaxy for device applications. Mining the talents of an international panel of experts, the book covers modern SiGe epitaxial growth techniques, epi defects and dopant diffusion in thin films, stability constraints, and electronic properties of SiGe, strained Si, and Si-C alloys. It includes appendices on topics such as the properties of Si and Ge, the generalized Moll-Ross relations, integral charge-control relations, and sample SiGe HBT compact model parameters.

Characterization of Heteroepitaxial Silicon Germanium Carbon Layers for Metal Oxide Semiconductor Field Effect Transistor (MOSFET) Applications

Download Characterization of Heteroepitaxial Silicon Germanium Carbon Layers for Metal Oxide Semiconductor Field Effect Transistor (MOSFET) Applications PDF Online Free

Author : Peter John Bjeletich
Publisher :
ISBN 13 :
Total Pages : 480 pages
Book Rating : 4.:/5 (69 download)

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Book Synopsis Characterization of Heteroepitaxial Silicon Germanium Carbon Layers for Metal Oxide Semiconductor Field Effect Transistor (MOSFET) Applications by : Peter John Bjeletich

Download or read book Characterization of Heteroepitaxial Silicon Germanium Carbon Layers for Metal Oxide Semiconductor Field Effect Transistor (MOSFET) Applications written by Peter John Bjeletich and published by . This book was released on 2004 with total page 480 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Silicon Heterostructure Devices

Author : John D. Cressler
Publisher : CRC Press
ISBN 13 : 1420066919
Total Pages : 468 pages
Book Rating : 4.4/5 (2 download)

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Book Synopsis Silicon Heterostructure Devices by : John D. Cressler

Download or read book Silicon Heterostructure Devices written by John D. Cressler and published by CRC Press. This book was released on 2018-10-03 with total page 468 pages. Available in PDF, EPUB and Kindle. Book excerpt: SiGe HBTs are the most mature of the Si heterostructure devices and not surprisingly the most completely researched and discussed in the technical literature. However, new effects and nuances of device operation are uncovered year-after-year as transistor scaling advances and application targets march steadily upward in frequency and sophistication. Providing a comprehensive treatment of SiGe HBTs, Silicon Heterostructure Devices covers an amazingly diverse set of topics, ranging from basic transistor physics to noise, radiation effects, reliability, and TCAD simulation. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this text explores SiGe heterojunction bipolar transistors (HBTs), heterostructure FETs, various other heterostructure devices, as well as optoelectronic components. The book provides an overview, characteristics, and derivative applications for each device covered. It discusses device physics, broadband noise, performance limits, reliability, engineered substrates, and self-assembling nanostructures. Coverage of optoelectronic devices includes Si/SiGe LEDs, near-infrared detectors, photonic transistors for integrated optoelectronics, and quantum cascade emitters. In addition to this substantial collection of material, the book concludes with a look at the ultimate limits of SiGe HBTs scaling. It contains easy-to-reference appendices on topics including the properties of silicon and germanium, the generalized Moll-Ross relations, and the integral charge-control model, and sample SiGe HBT compact model parameters.

Multicomponent and Multilayered Thin Films for Advanced Microtechnologies: Techniques, Fundamentals and Devices

Author : O. Auciello
Publisher : Springer Science & Business Media
ISBN 13 : 9401117276
Total Pages : 625 pages
Book Rating : 4.4/5 (11 download)

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Book Synopsis Multicomponent and Multilayered Thin Films for Advanced Microtechnologies: Techniques, Fundamentals and Devices by : O. Auciello

Download or read book Multicomponent and Multilayered Thin Films for Advanced Microtechnologies: Techniques, Fundamentals and Devices written by O. Auciello and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 625 pages. Available in PDF, EPUB and Kindle. Book excerpt: The synthesis of multicomponent/multilayered superconducting, conducting, semiconducting and insulating thin films has become the subject of an intensive, worldwide, interdisciplinary research effort. The development of deposition-characterization techniques and the science and technology related to the synthesis of these films are critical for the successful evolution of this interdisciplinary field of research and the implementation of the new materials in a whole new generation of advanced microdevices. This book contains the lectures and contributed papers on various scientific and technological aspects of multicomponent and multilayered thin films presented at a NATO/ASI. Compared to other recent books on thin films, the distinctive character of this book is the interdisciplinary treatment of the various fields of research related to the different thin film materials mentioned above. The wide range of topics discussed in this book include vacuum-deposition techniques, synthesis-processing, characterization, and devices of multicomponent/multilayered oxide high temperature superconducting, ferroelectric, electro-optic, optical, metallic, silicide, and compound semiconductor thin films. The book presents an unusual intedisciplinary exchange of ideas between researchers with cross-disciplinary backgrounds and it will be useful to established investigators as well as postdoctoral and graduate students.

Physics of Semiconductor Devices

Author : K. N. Bhat
Publisher : Alpha Science Int'l Ltd.
ISBN 13 : 9788173195679
Total Pages : 1310 pages
Book Rating : 4.1/5 (956 download)

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Book Synopsis Physics of Semiconductor Devices by : K. N. Bhat

Download or read book Physics of Semiconductor Devices written by K. N. Bhat and published by Alpha Science Int'l Ltd.. This book was released on 2004 with total page 1310 pages. Available in PDF, EPUB and Kindle. Book excerpt: Contributed papers of the workshop held at IIT, Madras, in 2003.

Silicon-Germanium Carbon Alloys

Author : S. Pantellides
Publisher : CRC Press
ISBN 13 : 9781560329633
Total Pages : 552 pages
Book Rating : 4.3/5 (296 download)

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Book Synopsis Silicon-Germanium Carbon Alloys by : S. Pantellides

Download or read book Silicon-Germanium Carbon Alloys written by S. Pantellides and published by CRC Press. This book was released on 2002-07-26 with total page 552 pages. Available in PDF, EPUB and Kindle. Book excerpt: Carbon (C) and Silicon Germanium (SiGe) work like a magic sauce. At least in small concentrations, they make everything taste better. It is remarkable enough that SiGe, a new material, and the heterobipolar transistor, a new device, appear on the brink of impacting the exploding wireless market. The addition of C to SiGe, albeit in small concentrations, looks to have breakthrough potential. Here, at last, is proof that materials science can put a rocket booster on the silicon-mind, the silicon transistor. Scientific excitement arises, as always, from the new possibilities a multicomponent materials system offers. Bandgaps can be changed, strains can be tuned, and properties can be tailored. This is catnip to the materials scientist. The wide array of techniques applied here to the SiGeC system bear testimony to the ingenious approaches now available for mastering the complexities of new materials

Measurement and Modeling of Silicon Heterostructure Devices

Author : John D. Cressler
Publisher : CRC Press
ISBN 13 : 1351834762
Total Pages : 189 pages
Book Rating : 4.3/5 (518 download)

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Book Synopsis Measurement and Modeling of Silicon Heterostructure Devices by : John D. Cressler

Download or read book Measurement and Modeling of Silicon Heterostructure Devices written by John D. Cressler and published by CRC Press. This book was released on 2018-10-03 with total page 189 pages. Available in PDF, EPUB and Kindle. Book excerpt: When you see a nicely presented set of data, the natural response is: “How did they do that; what tricks did they use; and how can I do that for myself?” Alas, usually, you must simply keep wondering, since such tricks-of- the-trade are usually held close to the vest and rarely divulged. Shamefully ignored in the technical literature, measurement and modeling of high-speed semiconductor devices is a fine art. Robust measuring and modeling at the levels of performance found in modern SiGe devices requires extreme dexterity in the laboratory to obtain reliable data, and then a valid model to fit that data. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume focuses on measurement and modeling of high-speed silicon heterostructure devices. The chapter authors provide experience-based tricks-of-the-trade and the subtle nuances of measuring and modeling advanced devices, making this an important reference for the semiconductor industry. It includes easy-to-reference appendices covering topics such as the properties of silicon and germanium, the generalized Moll-Ross relations, the integral charge-control model, and sample SiGe HBT compact model parameters.

Electronic and Material Characterization of SiGe and SiGeC Epitaxial Layers

Author : Jeff J. Peterson
Publisher :
ISBN 13 :
Total Pages : 634 pages
Book Rating : 4.:/5 (65 download)

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Book Synopsis Electronic and Material Characterization of SiGe and SiGeC Epitaxial Layers by : Jeff J. Peterson

Download or read book Electronic and Material Characterization of SiGe and SiGeC Epitaxial Layers written by Jeff J. Peterson and published by . This book was released on 2002 with total page 634 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Technology Computer Aided Design for Si, SiGe and GaAs Integrated Circuits

Author : G.A. Armstrong
Publisher : IET
ISBN 13 : 0863417434
Total Pages : 457 pages
Book Rating : 4.8/5 (634 download)

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Book Synopsis Technology Computer Aided Design for Si, SiGe and GaAs Integrated Circuits by : G.A. Armstrong

Download or read book Technology Computer Aided Design for Si, SiGe and GaAs Integrated Circuits written by G.A. Armstrong and published by IET. This book was released on 2007-11-30 with total page 457 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first book to deal with a broad spectrum of process and device design, and modeling issues related to semiconductor devices, bridging the gap between device modelling and process design using TCAD. Presents a comprehensive perspective of emerging fields and covers topics ranging from materials to fabrication, devices, modelling and applications. Aimed at research-and-development engineers and scientists involved in microelectronics technology and device design via Technology CAD, and TCAD engineers and developers.

Handbook of Thin Films

Author : Hari Singh Nalwa
Publisher : Elsevier
ISBN 13 : 0080533248
Total Pages : 3436 pages
Book Rating : 4.0/5 (85 download)

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Book Synopsis Handbook of Thin Films by : Hari Singh Nalwa

Download or read book Handbook of Thin Films written by Hari Singh Nalwa and published by Elsevier. This book was released on 2001-11-17 with total page 3436 pages. Available in PDF, EPUB and Kindle. Book excerpt: This five-volume handbook focuses on processing techniques, characterization methods, and physical properties of thin films (thin layers of insulating, conducting, or semiconductor material). The editor has composed five separate, thematic volumes on thin films of metals, semimetals, glasses, ceramics, alloys, organics, diamonds, graphites, porous materials, noncrystalline solids, supramolecules, polymers, copolymers, biopolymers, composites, blends, activated carbons, intermetallics, chalcogenides, dyes, pigments, nanostructured materials, biomaterials, inorganic/polymer composites, organoceramics, metallocenes, disordered systems, liquid crystals, quasicrystals, and layered structures.Thin films is a field of the utmost importance in today's materials science, electrical engineering and applied solid state physics; with both research and industrial applications in microelectronics, computer manufacturing, and physical devices.Advanced, high-performance computers, high-definition TV, digital camcorders, sensitive broadband imaging systems, flat-panel displays, robotic systems, and medical electronics and diagnostics are but a few examples of miniaturized device technologies that depend the utilization of thin film materials. The Handbook of Thin Films Materials is a comprehensive reference focusing on processing techniques, characterization methods, and physical properties of these thin film materials.

Chemical Abstracts

Author :
Publisher :
ISBN 13 :
Total Pages : 2002 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Chemical Abstracts by :

Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2002 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Silicon Heterostructure Handbook

Author : John D. Cressler
Publisher : CRC Press
ISBN 13 : 1420026585
Total Pages : 1249 pages
Book Rating : 4.4/5 (2 download)

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Book Synopsis Silicon Heterostructure Handbook by : John D. Cressler

Download or read book Silicon Heterostructure Handbook written by John D. Cressler and published by CRC Press. This book was released on 2018-10-03 with total page 1249 pages. Available in PDF, EPUB and Kindle. Book excerpt: An extraordinary combination of material science, manufacturing processes, and innovative thinking spurred the development of SiGe heterojunction devices that offer a wide array of functions, unprecedented levels of performance, and low manufacturing costs. While there are many books on specific aspects of Si heterostructures, the Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits, and Applications of SiGe and Si Strained-Layer Epitaxy is the first book to bring all aspects together in a single source. Featuring broad, comprehensive, and in-depth discussion, this handbook distills the current state of the field in areas ranging from materials to fabrication, devices, CAD, circuits, and applications. The editor includes "snapshots" of the industrial state-of-the-art for devices and circuits, presenting a novel perspective for comparing the present status with future directions in the field. With each chapter contributed by expert authors from leading industrial and research institutions worldwide, the book is unequalled not only in breadth of scope, but also in depth of coverage, timeliness of results, and authority of references. It also includes a foreword by Dr. Bernard S. Meyerson, a pioneer in SiGe technology. Containing nearly 1000 figures along with valuable appendices, the Silicon Heterostructure Handbook authoritatively surveys materials, fabrication, device physics, transistor optimization, optoelectronics components, measurement, compact modeling, circuit design, and device simulation.

Proceedings of the International Conference on Microelectronics, Computing & Communication Systems

Author : Vijay Nath
Publisher : Springer
ISBN 13 : 9811055653
Total Pages : 384 pages
Book Rating : 4.8/5 (11 download)

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Book Synopsis Proceedings of the International Conference on Microelectronics, Computing & Communication Systems by : Vijay Nath

Download or read book Proceedings of the International Conference on Microelectronics, Computing & Communication Systems written by Vijay Nath and published by Springer. This book was released on 2017-12-29 with total page 384 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume comprises select papers from the International Conference on Microelectronics, Computing & Communication Systems(MCCS 2015). Electrical, Electronics, Computer, Communication and Information Technology and their applications in business, academic, industry and other allied areas. The main aim of this volume is to bring together content from international scientists, researchers, engineers from both academia and the industry. The contents of this volume will prove useful to researchers, professionals, and students alike.

Research in Progress

Author :
Publisher :
ISBN 13 :
Total Pages : 604 pages
Book Rating : 4.:/5 (334 download)

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Book Synopsis Research in Progress by :

Download or read book Research in Progress written by and published by . This book was released on 1984 with total page 604 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Quantum Heterostructures

Author : Vladimir Vasilʹevich Mitin
Publisher : Cambridge University Press
ISBN 13 : 9780521636353
Total Pages : 670 pages
Book Rating : 4.6/5 (363 download)

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Book Synopsis Quantum Heterostructures by : Vladimir Vasilʹevich Mitin

Download or read book Quantum Heterostructures written by Vladimir Vasilʹevich Mitin and published by Cambridge University Press. This book was released on 1999-07-13 with total page 670 pages. Available in PDF, EPUB and Kindle. Book excerpt: Quantum Heterostructures provides a detailed description of the key physical and engineering principles of quantum semiconductor heterostructures. Blending important concepts from physics, materials science, and electrical engineering, it also explains clearly the behavior and operating features of modern microelectronic and optoelectronic devices. The authors begin by outlining the trends that have driven development in this field, most importantly the need for high-performance devices in computer, information, and communications technologies. They then describe the basics of quantum nanoelectronics, including various transport mechanisms. In the latter part of the book, they cover novel microelectronic devices, and optical devices based on quantum heterostructures. The book contains many homework problems and is suitable as a textbook for undergraduate and graduate courses in electrical engineering, physics, or materials science. It will also be of great interest to those involved in research or development in microelectronic or optoelectronic devices.

Defect Engineering in Semiconductor Growth, Processing, and Device Technology

Author : S. Ashok
Publisher :
ISBN 13 :
Total Pages : 1176 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Defect Engineering in Semiconductor Growth, Processing, and Device Technology by : S. Ashok

Download or read book Defect Engineering in Semiconductor Growth, Processing, and Device Technology written by S. Ashok and published by . This book was released on 1992 with total page 1176 pages. Available in PDF, EPUB and Kindle. Book excerpt: Proceedings of the San Francisco meeting of April-May 1992. Papers emphasize deliberate and controlled introduction and manipulation of defects in order to engineer some desired properties in semiconductor materials and devices. Topics include: defects in bulk crystals, and in thin films; defect characterization; hydrogen interaction; processing induction of defects; quantum wells; ion implantation. Annotation copyright by Book News, Inc., Portland, OR

Silicon Molecular Beam Epitaxy

Author : John Condon Bean
Publisher :
ISBN 13 :
Total Pages : 682 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Silicon Molecular Beam Epitaxy by : John Condon Bean

Download or read book Silicon Molecular Beam Epitaxy written by John Condon Bean and published by . This book was released on 1991 with total page 682 pages. Available in PDF, EPUB and Kindle. Book excerpt: Featuring papers from the 1991 MRS Spring Meeting (April 29 - May 3, Anaheim, California), this volume contains 93 papers presenting research in Si MBE, including a key paper from the special Late News session on light from porous silicon. Topics covered include: homoepitaxy and substrate preparation; doping; GeSi growth; GeSi optical properties; GeSi electronic transport; device applications; epitaxial metals and insulators; novel materials and growth techniques.