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Characterization Of Semi Insulating Gaas For Detector Fabrication
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Book Synopsis Characterization of Semi-insulating GaAs for Detector Fabrication by :
Download or read book Characterization of Semi-insulating GaAs for Detector Fabrication written by and published by . This book was released on 1904 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Radiation detectors work as Schottky devices. The Schottky contact of the investigated detectors consists of a Ti/Pt/Au layer on the front-side of a 500?m thick semi-insulating GaAs substrate. The back-side is an alloyed Ge/Au ohmic contact. The structure of these contacts are squares with sides of between 1,5mm and 5mm. In order to seperate the behaviour of the contacts, an independent determination of those parameters of the bulk material which are responsible for a satisfactory functioning of the detector are necessary. We present a theoretical model of the detector which simulates detector properties according to relevant parameters such as the resistivity p, the mobility? of the charge carriers, the energy level EDD and concentration NDD of the bulk-defects and the leakage-current jL of the device. The aim of this study is to determine these parameters experimentally and compare materials from different suppliers. The relevant parameters are then used for the detector simulation.
Book Synopsis SI LEC GaAs Nuclear Detectors: Characterization, Performance and Applications by :
Download or read book SI LEC GaAs Nuclear Detectors: Characterization, Performance and Applications written by and published by . This book was released on 1906 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: We report on characterization, performance and applications of nuclear detectors fabricated on Semi-Insulating (SI) Liquid Encapsulated Czokralski (LEC) grown GaAs. We have developed a non alloyed and non injecting ohmic contact (NAOC) based on ion implantation to fabricate detectors which can operate at applied voltages greater than the one needed to make them fully depleted. With such a detectors and at high applied voltages, Va> 500 V, a nearly full charge collection efficiency has been achieved for both alpha particles and X-rays. Furthermore the best energy resolution achieved at room temperature has been 1.1% for 5.48 MeV alpha particles and 26.1% for 59.5 keV X-rays, while at -30 °C the best energy resolution measured for X-rays has been 4.1%.
Book Synopsis Characterization and qualification of GaAs semi-insulating substrates by : James D. Oliver
Download or read book Characterization and qualification of GaAs semi-insulating substrates written by James D. Oliver and published by . This book was released on 1981 with total page 66 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Characterization of Semi-insulating, Cu Contaminated, and Gettered GaAs by : Thomas Eugene Zirkle
Download or read book Characterization of Semi-insulating, Cu Contaminated, and Gettered GaAs written by Thomas Eugene Zirkle and published by . This book was released on 1990 with total page 426 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Gallium Arsenide And Related Compounds - Proceedings Of The 3rd International Workshop by : Pier Giovanni Pelfer
Download or read book Gallium Arsenide And Related Compounds - Proceedings Of The 3rd International Workshop written by Pier Giovanni Pelfer and published by World Scientific. This book was released on 1996-02-09 with total page 258 pages. Available in PDF, EPUB and Kindle. Book excerpt: The subject of the workshop was the Gallium Arsenide and related compounds devices for Physics research and applications. The topics were the GaAs detectors for the experimental apparatus, the characterisation of the materials and the detectors, the GaAs electronics and optoelectronics, the radiation hardness and the x-ray detectors for x-ray imaging in medical applications. The purpose of the workshop was to discuss the status of the art of these fields in view of the construction of devices for the stringent demands imposed by the future Physics experiments and the applications in term of speed and radiation hardness.
Book Synopsis Optical and Electrical Characterization of Metal/semi-insulating GaAs Contacts by :
Download or read book Optical and Electrical Characterization of Metal/semi-insulating GaAs Contacts written by and published by . This book was released on 1997 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Optical Characterization of EL2 and Carbon in Semi-insulating GaAs by : Ju Zheng
Download or read book Optical Characterization of EL2 and Carbon in Semi-insulating GaAs written by Ju Zheng and published by . This book was released on 1992 with total page 168 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Semiconductor Materials Analysis and Fabrication Process Control by : G.M. Crean
Download or read book Semiconductor Materials Analysis and Fabrication Process Control written by G.M. Crean and published by Elsevier. This book was released on 2012-12-02 with total page 352 pages. Available in PDF, EPUB and Kindle. Book excerpt: There is a growing awareness that the successful implementation of novel material systems and technology steps in the fabrication of microelectronic and optoelectronic devices, is critically dependent on the understanding and control of the materials, the process steps and their interactions. The contributions in this volume demonstrate that characterisation and analysis techniques are an essential support mechanism for research in these fields. Current major research themes are reviewed both in the development and application of diagnostic techniques for advanced materials analysis and fabrication process control. Two distinct trends are elucidated: the emergence and evaluation of sophisticated in situ optical diagnostic techniques such as photoreflectance and spectroellipsometry and the industrial application of ultra-high sensitivity chemical analysis techniques for contamination monitoring. The volume will serve as a useful and timely overview of this increasingly important field.
Author :Cornelius T. Leondes Publisher :Springer Science & Business Media ISBN 13 :0387257861 Total Pages :2142 pages Book Rating :4.3/5 (872 download)
Download or read book Mems/Nems written by Cornelius T. Leondes and published by Springer Science & Business Media. This book was released on 2007-10-08 with total page 2142 pages. Available in PDF, EPUB and Kindle. Book excerpt: This significant and uniquely comprehensive five-volume reference is a valuable source for research workers, practitioners, computer scientists, students, and technologists. It covers all of the major topics within the subject and offers a comprehensive treatment of MEMS design, fabrication techniques, and manufacturing methods. It also includes current medical applications of MEMS technology and provides applications of MEMS to opto-electronic devices. It is clearly written, self-contained, and accessible, with helpful standard features including an introduction, summary, extensive figures and design examples with comprehensive reference lists.
Book Synopsis Analysis of Semi-Insulating Bulk GaAs Using Glow Discharge Mass Spectrometry by :
Download or read book Analysis of Semi-Insulating Bulk GaAs Using Glow Discharge Mass Spectrometry written by and published by . This book was released on 1993 with total page 23 pages. Available in PDF, EPUB and Kindle. Book excerpt: The ability to perform sub-part per billion (ppb) analysis of semi- insulating (SI) GaAs substrate material is of critical importance for the development of electronic materials used in microelectronic device applications. Glow discharge mass spectrometry (GDMS) is commonly used to perform high sensitivity (part-per-trillion) measurements of metals and semiconductors. Since the sample is utilized as the cathode in a DC glow discharge, it must be conducting to some degree. Thus analysis of SI wafers presents major difficulties. Possible solutions include the use of a high purity mask or the mixing of pulverized sample material with high purity powder. Due to the finite purity of available materials, these methods have limitations. This study has resulted in the development of a novel method to perform maskless analysis of SI wafers with sub-ppb sensitivity across virtually the entire periodic table. This method has been utilized in various studies related to electronic device applications. GaAs, Trace analysis, Glow discharge mass spectrometry, Semi- insulating, Bulk chemical characterization.
Book Synopsis Characterization in Compound Semiconductor Processing by : Yale Strausser
Download or read book Characterization in Compound Semiconductor Processing written by Yale Strausser and published by Momentum Press. This book was released on 2010 with total page 217 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Characterization in Compound Semiconductor Processing is for scientists and engineers working with compound semiconductor materials and devices who are not characterization specialists. Materials and processes typically used in R&D and in the fabrication of GaAs, GaA1As, InP and HgCdTe based devices provide examples of common analytical problems. The book discusses a variety of characterization techniques to provide insight into how each individually, or in combination, might be used in solving problems associated with these materials. The book will help in the selection and application of the appropriate analytical techniques by its coverage of all stages of materials or device processing: substrate preparation, epitaxial growth, dielectric film deposition, contact formation and dopant introduction."--P. [4] of cover.
Download or read book Nuclear Science Abstracts written by and published by . This book was released on 1975-07 with total page 1018 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Gaas Detectors And Electronics For High Energy Physics - Proceedings Of The 20th Infn Eloisatron Project Workshop by : C Del Papa
Download or read book Gaas Detectors And Electronics For High Energy Physics - Proceedings Of The 20th Infn Eloisatron Project Workshop written by C Del Papa and published by World Scientific. This book was released on 1992-12-18 with total page 300 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book makes an assessment of the state of the art regarding a new technology, GaAs, which will eventually become vital to construction of the apparatus for high energy physics at future accelerators.
Book Synopsis Solid-State Radiation Detectors by : Salah Awadalla
Download or read book Solid-State Radiation Detectors written by Salah Awadalla and published by CRC Press. This book was released on 2017-12-19 with total page 318 pages. Available in PDF, EPUB and Kindle. Book excerpt: Integrating aspects of engineering, application physics, and medical science, Solid-State Radiation Detectors: Technology and Applications offers a comprehensive review of new and emerging solid-state materials-based technologies for radiation detection. Each chapter is structured to address the current advantages and challenges of each material and technology presented, as well as to discuss novel research and applications. Featuring contributions from leading experts in industry and academia, this authoritative text: Covers modern semiconductors used for radiation monitoring Examines CdZnTe and CdTe technology for imaging applications including three-dimensional capability detectors Highlights interconnect technology for current pixel detectors Describes hybrid pixel detectors and their characterizations Tackles the integrated analog signal processing read-out front ends for particle detectors Considers new organic materials with direct bandgap for direct energy detection Summarizes recent developments involving lanthanum halide and cerium bromide scintillators Analyzes the potential of recent progress in the field of crystallogenesis, quantum dots, and photonics crystals toward a new concept of x- and gamma-ray detectors based on metamaterials Explores position-sensitivity photomultipliers and silicon photomultipliers for scintillation crystals Solid-State Radiation Detectors: Technology and Applications provides a valuable reference for engineers and scientists looking to enhance the performance of radiation detector technology for medical imaging and other applications.
Book Synopsis Scientific and Technical Aerospace Reports by :
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 702 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Modeling and Testing of Semi-insulating Gallium Arsenide Interdigitated Photodetectors by : Ravindranath Tagore Kollipara
Download or read book Modeling and Testing of Semi-insulating Gallium Arsenide Interdigitated Photodetectors written by Ravindranath Tagore Kollipara and published by . This book was released on 1991 with total page 252 pages. Available in PDF, EPUB and Kindle. Book excerpt: High speed photodetectors are a necessary element in broad band digital and analog optical communication systems. In this thesis easily integrable planar high speed photodetectors made on undoped semi-insulating (SI) GaAs substrates are modeled and tested. The fabrication process of the detectors is fully compatible with GaAs metal-semiconductor field effect transistor (MESFET) processing technology. Interdigitated fingers are used as the contacts to achieve both high sensitivity and large bandwidth. Detectors made with both ohmic and Schottky contacts are fabricated and tested. The equivalent circuit elements of the interdigitated structure are modeled using accurate lumped element circuit models associated with the various discontinuities of the structure. The results of the model agree well with the experimental results as well as with other published results. Numerical simulation of the SI-GaAs metal-semiconductor- metal (MSM) photodetector is performed. The carriers are tracked after an ideal optical pulse is applied and the intrinsic current as a function of time is computed. Then the influence of all the external circuit elements is included and the output current across the load resistor is computed. The simulated response is compared with other published models. The electrical and optical characteristics of the detectors are measured. For ohmic contact detectors, the dark current increases linearly with bias until some critical field is reached beyond which the dark current increases nonlinearly with bias. The time response of the detectors is measured with a 10 ps pulsed laser operating at - 600 nm and also with a pulsed GaAs /AlGaAs semiconductor laser operating at 850 nm. The ohmic and Schottky contact detectors have approximately the same rise time. The fall time of the Schottky contact detector is much smaller than the fall time of ohmic contact detector. The long fall time of the ohmic detector does not depend on the spacing between contacts. This long fall time is due to the large barrier that exists near the ohmic metal/SI-GaAs cathode contact. No such barrier exists for SI-GaAs MSM photodetector. The simulated impulse response of the SI-GaAs MSM photodetector is compared with the measured impulse response.
Book Synopsis Novel Techniques for the Fabricating and Characterization of GaAs MIS (Metal Insulator Semiconductor) Structures by : R. S. Ehle
Download or read book Novel Techniques for the Fabricating and Characterization of GaAs MIS (Metal Insulator Semiconductor) Structures written by R. S. Ehle and published by . This book was released on 1984 with total page 26 pages. Available in PDF, EPUB and Kindle. Book excerpt: Organometallic chemical vapor deposition (OMCVD) of Al2O3 on GaAs has been investigated as a means of fabricating metal-insulator-semiconductor field effect transistors (MISFET). Deposition at temperatures less than 400C forms high-quality films of Al2O3. Diffusion can alter the composition during high-temperature anneals. In-situ etching of the GaAs just prior to depositing the Al2O3 markedly reduced surface generation velocities, but inversion at the interface was not conclusively demonstrated. (Author).
