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Author : John Österman
Publisher :
ISBN 13 :
Total Pages : 42 pages
Book Rating : 4.:/5 (186 download)
Download or read book Characterization of Electrical Properties of 4H-SiC by Imaging Techniques written by John Österman and published by . This book was released on 2004 with total page 42 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Heather C. Crockett
Publisher :
ISBN 13 : 9781423506751
Total Pages : 85 pages
Book Rating : 4.5/5 (67 download)
Download or read book Characterization of the Optical and Electrical Properties of Proton- Irradiated 4H-Silicon Carbide written by Heather C. Crockett and published by . This book was released on 2002-03-01 with total page 85 pages. Available in PDF, EPUB and Kindle. Book excerpt: Epitaxial n-type 4H-silicon carbide (SiC) is irradiated with 2 MeV protons to evaluate the dislocation damage effects on the optical and electrical characteristics of the material. The optical properties of the material are investigated using temperature-dependant photoluminescence (PL) and the effects of proton irradiation on the electrical properties are evaluated using current- voltage measurements and constant-voltage deep level transient spectroscopy (CV- DLTS). Subsequent high-temperature thermal annealing and recovery of the irradiated material is investigated over the temperature range of 900-1500 deg C. Proton-induced irradiation damage is apparent in the 4H-SiC material, affecting both the optical and electrical characteristics of the devices. The radiative behavior of the nitrogen-related near band edge transitions is significantly reduced as a result of the irradiation with partial recovery observed after high-temperature thermal annealing at 1500 deg C. A deeper trapping complex (EC-ET 380 meV) is detected as a result of irradiation and shows signs of activation due to thermal annealing. Initial indications taken from I-V measurements of the Schottky diodes reveal that proton irradiation followed by thermal annealing at 900 deg C may, in fact, enhance the rectifying device characteristics. Increasing the anneal temperature (TA = 1300 deg C) causes the device to fail entirely. Further annealing of the irradiated 4H-SiC at 1500 deg C demonstrates recovery in the rectifying behavior of the material. Significant levels of deep level donor traps are observed, induced by irradiation in n-type material. Three detectable defect pairs emerge with energy levels ranging from 570-730 meV below the conduction band. The trap parameters were determined using curve-fitting algorithms.
Author : Tomasz Śledziewski
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (17 download)
Download or read book Electrical Characterization of N-type 4H Silicon Carbide with Improved Material and Interface Properties Using Advanced Doping Techniques written by Tomasz Śledziewski and published by . This book was released on 2018 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Zhe Chuan Feng
Publisher : CRC Press
ISBN 13 : 0429583958
Total Pages : 465 pages
Book Rating : 4.4/5 (295 download)
Download or read book Handbook of Silicon Carbide Materials and Devices written by Zhe Chuan Feng and published by CRC Press. This book was released on 2023-07-10 with total page 465 pages. Available in PDF, EPUB and Kindle. Book excerpt: This handbook presents the key properties of silicon carbide (SiC), the power semiconductor for the 21st century. It describes related technologies, reports the rapid developments and achievements in recent years, and discusses the remaining challenging issues in the field. The book consists of 15 chapters, beginning with a chapter by Professor W. J. Choyke, the leading authority in the field, and is divided into four sections. The topics include presolar SiC history, vapor-liquid-solid growth, spectroscopic investigations of 3C-SiC/Si, developments and challenges in the 21st century; CVD principles and techniques, homoepitaxy of 4H-SiC, cubic SiC grown on 4H-SiC, SiC thermal oxidation processes and MOS interface, Raman scattering, NIR luminescent studies, Mueller matrix ellipsometry, Raman microscopy and imaging, 4H-SiC UV photodiodes, radiation detectors, and short wavelength and synchrotron X-ray diffraction. This comprehensive work provides a strong contribution to the engineering, materials, and basic science knowledge of the 21st century, and will be of interest to material growers, designers, engineers, scientists, postgraduate students, and entrepreneurs.
Author : Christian Morath
Publisher :
ISBN 13 : 9781423546870
Total Pages : 166 pages
Book Rating : 4.5/5 (468 download)
Download or read book Electrical Characterization of Ion-Implanted 4H-Silicon Carbide written by Christian Morath and published by . This book was released on 1999-03-01 with total page 166 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electrical characterization has been performed on ion-implanted p- type 4H-SiC to assess the activation efficiency and implantation-related damage recrystallization with the intention of developing an implantation/annealing scheme. Low doped (Na - Nd = 5x10(exp 15)/cu cm) epitaxial p-type layers grown by MOCVD were implanted with Al or B at doses ranging from 1x10(exp 13) to 1x10(exp 14)/sq cm at room temperature or 500 deg. C. The electrical technique of Temperature Dependent Hall Effect (TDHE) indicated that Al and B act as shallow acceptors 4H-SiC with ionization energies of ^252 and ^285 meV, respectively. The highest activation efficiency for Al and B implanted samples was found to occur at anneal temperatures of ^1650 deg C and ^1550 deg C, respectively. The implantation dose resulting in the highest concentration for Al and B implantation was found to be 3x10(exp 13)/sq cm. An average peak mobility of ^200 sq cm/ V s was found for an Al implanted sample; this is considerably higher than the average peak mobility for the B implanted samples, ^100 sq cm/ V s. No significant gains in activation efficiency or mobility were evident with high temperature implantation compared to the room temperature implantation. Overall, Al implantation of 4H-SiC appears superior with regard to these properties compared to B implantation.
Author : Tsunenobu Kimoto
Publisher : John Wiley & Sons
ISBN 13 : 1118313550
Total Pages : 565 pages
Book Rating : 4.1/5 (183 download)
Download or read book Fundamentals of Silicon Carbide Technology written by Tsunenobu Kimoto and published by John Wiley & Sons. This book was released on 2014-09-23 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.
Author : Harsh Naik
Publisher :
ISBN 13 :
Total Pages : 330 pages
Book Rating : 4.:/5 (115 download)
Download or read book Study of Electrical Properties of 4H-SiC/SiO2 Interface written by Harsh Naik and published by . This book was released on 2013 with total page 330 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Peter Friedrichs
Publisher : John Wiley & Sons
ISBN 13 : 3527629068
Total Pages : 528 pages
Book Rating : 4.5/5 (276 download)
Download or read book Silicon Carbide written by Peter Friedrichs and published by John Wiley & Sons. This book was released on 2011-04-08 with total page 528 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book prestigiously covers our current understanding of SiC as a semiconductor material in electronics. Its physical properties make it more promising for high-powered devices than silicon. The volume is devoted to the material and covers methods of epitaxial and bulk growth. Identification and characterization of defects is discussed in detail. The contributions help the reader to develop a deeper understanding of defects by combining theoretical and experimental approaches. Apart from applications in power electronics, sensors, and NEMS, SiC has recently gained new interest as a substrate material for the manufacture of controlled graphene. SiC and graphene research is oriented towards end markets and has high impact on areas of rapidly growing interest like electric vehicles. The list of contributors reads like a "Who's Who" of the SiC community, strongly benefiting from collaborations between research institutions and enterprises active in SiC crystal growth and device development.
Author : Wolfgang J. Choyke
Publisher : Springer Science & Business Media
ISBN 13 : 3642188702
Total Pages : 911 pages
Book Rating : 4.6/5 (421 download)
Download or read book Silicon Carbide written by Wolfgang J. Choyke and published by Springer Science & Business Media. This book was released on 2013-04-17 with total page 911 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since the 1997 publication of "Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology" edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC field. So there is a growing need to update the scientific community on the important events in research and development since then. The editors have again gathered an outstanding team of the world's leading SiC researchers and design engineers to write on the most recent developments in SiC.
Author : Christian P. Morath (2LT, USAF.)
Publisher :
ISBN 13 :
Total Pages : 292 pages
Book Rating : 4.:/5 (132 download)
Download or read book Electrical Characterization of Ion-implanted 4H-silicon Carbide written by Christian P. Morath (2LT, USAF.) and published by . This book was released on 1999 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Blake Shelley Ginsberg Simpkins
Publisher :
ISBN 13 :
Total Pages : 246 pages
Book Rating : 4.:/5 (318 download)
Download or read book Electrical Characterization of Dislocations in GaN Using Advanced Scanning Probe Techniques written by Blake Shelley Ginsberg Simpkins and published by . This book was released on 2003 with total page 246 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Konstantinos Zekentes
Publisher : Materials Research Forum LLC
ISBN 13 : 1945291842
Total Pages : 250 pages
Book Rating : 4.9/5 (452 download)
Download or read book Advancing Silicon Carbide Electronics Technology I written by Konstantinos Zekentes and published by Materials Research Forum LLC. This book was released on 2018-09-25 with total page 250 pages. Available in PDF, EPUB and Kindle. Book excerpt: The rapidly advancing Silicon Carbide technology has a great potential in high temperature and high frequency electronics. High thermal stability and outstanding chemical inertness make SiC an excellent material for high-power, low-loss semiconductor devices. The present volume presents the state of the art of SiC device fabrication and characterization. Topics covered include: SiC surface cleaning and etching techniques; electrical characterization methods and processing of ohmic contacts to silicon carbide; analysis of contact resistivity dependence on material properties; limitations and accuracy of contact resistivity measurements; ohmic contact fabrication and test structure design; overview of different metallization schemes and processing technologies; thermal stability of ohmic contacts to SiC, their protection and compatibility with device processing; Schottky contacts to SiC; Schottky barrier formation; Schottky barrier inhomogeneity in SiC materials; technology and design of 4H-SiC Schottky and Junction Barrier Schottky diodes; Si/SiC heterojunction diodes; applications of SiC Schottky diodes in power electronics and temperature/light sensors; high power SiC unipolar and bipolar switching devices; different types of SiC devices including material and technology constraints on device performance; applications in the area of metal contacts to silicon carbide; status and prospects of SiC power devices.
Author : Sang-Kwon Lee
Publisher :
ISBN 13 :
Total Pages : 88 pages
Book Rating : 4.:/5 (186 download)
Download or read book Processing and Characterization of Silicon Carbide (6H- and 4H-SiC) Contacts for High Power and High Temperature Device Applications written by Sang-Kwon Lee and published by . This book was released on 2002 with total page 88 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 1048 pages
Book Rating : 4.F/5 ( download)
Download or read book International Aerospace Abstracts written by and published by . This book was released on 1999 with total page 1048 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : George Gibbs
Publisher :
ISBN 13 : 9781681176437
Total Pages : 284 pages
Book Rating : 4.1/5 (764 download)
Download or read book Physics and Technology of Silicon Carbide Devices written by George Gibbs and published by . This book was released on 2016-10-01 with total page 284 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon (Si) is by far the most widely used semiconductor material for power devices. On the other hand, Si-based power devices are approaching their material limits, which has provoked a lot of efforts to find alternatives to Si-based power devices for better performance. With the rapid innovations and developments in the semiconductor industry, Silicon Carbide (SiC) power devices have progressed from immature prototypes in laboratories to a viable alternative to Si-based power devices in high-efficiency and high-power density applications. SiC devices have numerous persuasive advantages--high-breakdown voltage, high-operating electric field, high-operating temperature, high-switching frequency and low losses. Silicon Carbide (SiC) devices belong to the so-called wide band gap semiconductor group, which offers a number of attractive characteristics for high voltage power semiconductors when compared to commonly used silicon (Si). Recently, some SiC power devices, for example, Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effecttransistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. Physics and Technology of Silicon Carbide Devices abundantly describes recent technologies on manufacturing, processing, characterization, modeling, etc. for SiC devices.
Author : Stephen E. Saddow
Publisher : Elsevier
ISBN 13 : 0123859077
Total Pages : 496 pages
Book Rating : 4.1/5 (238 download)
Download or read book Silicon Carbide Biotechnology written by Stephen E. Saddow and published by Elsevier. This book was released on 2011-11-14 with total page 496 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon Carbide (SiC) is a wide-band-gap semiconductor biocompatible material that has the potential to advance advanced biomedical applications. SiC devices offer higher power densities and lower energy losses, enabling lighter, more compact and higher efficiency products for biocompatible and long-term in vivo applications ranging from heart stent coatings and bone implant scaffolds to neurological implants and sensors. The main problem facing the medical community today is the lack of biocompatible materials that are also capable of electronic operation. Such devices are currently implemented using silicon technology, which either has to be hermetically sealed so it cannot interact with the body or the material is only stable in vivo for short periods of time. For long term use (permanent implanted devices such as glucose sensors, brain-machine-interface devices, smart bone and organ implants) a more robust material that the body does not recognize and reject as a foreign (i.e., not organic) material is needed. Silicon Carbide has been proven to be just such a material and will open up a whole new host of fields by allowing the development of advanced biomedical devices never before possible for long-term use in vivo. This book not only provides the materials and biomedical engineering communities with a seminal reference book on SiC that they can use to further develop the technology, it also provides a technology resource for medical doctors and practitioners who are hungry to identify and implement advanced engineering solutions to their everyday medical problems that currently lack long term, cost effective solutions. Discusses Silicon Carbide biomedical materials and technology in terms of their properties, processing, characterization, and application, in one book, from leading professionals and scientists Critical assesses existing literature, patents and FDA approvals for clinical trials, enabling the rapid assimilation of important data from the current disparate sources and promoting the transition from technology research and development to clinical trials Explores long-term use and applications in vivo in devices and applications with advanced sensing and semiconducting properties, pointing to new product devekipment particularly within brain trauma, bone implants, sub-cutaneous sensors and advanced kidney dialysis devices
Author :
Publisher :
ISBN 13 :
Total Pages : 1142 pages
Book Rating : 4.E/5 ( download)
Download or read book Diffusion and Defect Data written by and published by . This book was released on 2002 with total page 1142 pages. Available in PDF, EPUB and Kindle. Book excerpt:
