Characterization And Modeling Of Silicon Carbide Junction Barrier Schottky Diodes

Download Characterization And Modeling Of Silicon Carbide Junction Barrier Schottky Diodes full books in PDF, epub, and Kindle. Read online Characterization And Modeling Of Silicon Carbide Junction Barrier Schottky Diodes ebook anywhere anytime directly on your device. Fast Download speed and no annoying ads. We cannot guarantee that every ebooks is available!

Fundamentals of Silicon Carbide Technology

Author : Tsunenobu Kimoto
Publisher : John Wiley & Sons
ISBN 13 : 1118313526
Total Pages : 565 pages
Book Rating : 4.1/5 (183 download)

DOWNLOAD NOW!

Book Synopsis Fundamentals of Silicon Carbide Technology by : Tsunenobu Kimoto

Download or read book Fundamentals of Silicon Carbide Technology written by Tsunenobu Kimoto and published by John Wiley & Sons. This book was released on 2014-11-24 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.

Modeling And Electrothermal Simulation Of Sic Power Devices: Using Silvaco© Atlas

Author : Bejoy N Pushpakaran
Publisher : World Scientific
ISBN 13 : 9813237848
Total Pages : 462 pages
Book Rating : 4.8/5 (132 download)

DOWNLOAD NOW!

Book Synopsis Modeling And Electrothermal Simulation Of Sic Power Devices: Using Silvaco© Atlas by : Bejoy N Pushpakaran

Download or read book Modeling And Electrothermal Simulation Of Sic Power Devices: Using Silvaco© Atlas written by Bejoy N Pushpakaran and published by World Scientific. This book was released on 2019-03-22 with total page 462 pages. Available in PDF, EPUB and Kindle. Book excerpt: The primary goal of this book is to provide a sound understanding of wide bandgap Silicon Carbide (SiC) power semiconductor device simulation using Silvaco© ATLAS Technology Computer Aided Design (TCAD) software. Physics-based TCAD modeling of SiC power devices can be extremely challenging due to the wide bandgap of the semiconductor material. The material presented in this book aims to shorten the learning curve required to start successful SiC device simulation by providing a detailed explanation of simulation code and the impact of various modeling and simulation parameters on the simulation results. Non-isothermal simulation to predict heat dissipation and lattice temperature rise in a SiC device structure under switching condition has been explained in detail. Key pointers including runtime error messages, code debugging, implications of using certain models and parameter values, and other factors beneficial to device simulation are provided based on the authors' experience while simulating SiC device structures. This book is useful for students, researchers, and semiconductor professionals working in the area of SiC semiconductor technology. Readers will be provided with the source code of several fully functional simulation programs that illustrate the use of Silvaco© ATLAS to simulate SiC power device structure, as well as supplementary material for download.Related Link(s)

Sic Materials And Devices - Volume 1

Author : Sergey Rumyantsev
Publisher : World Scientific
ISBN 13 : 981447777X
Total Pages : 342 pages
Book Rating : 4.8/5 (144 download)

DOWNLOAD NOW!

Book Synopsis Sic Materials And Devices - Volume 1 by : Sergey Rumyantsev

Download or read book Sic Materials And Devices - Volume 1 written by Sergey Rumyantsev and published by World Scientific. This book was released on 2006-07-25 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt: After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices — power switching Schottky diodes and high temperature MESFETs — are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology.

Conference Proceedings of 2021 International Joint Conference on Energy, Electrical and Power Engineering

Author : Cungang Hu
Publisher : Springer Nature
ISBN 13 : 9811919224
Total Pages : 733 pages
Book Rating : 4.8/5 (119 download)

DOWNLOAD NOW!

Book Synopsis Conference Proceedings of 2021 International Joint Conference on Energy, Electrical and Power Engineering by : Cungang Hu

Download or read book Conference Proceedings of 2021 International Joint Conference on Energy, Electrical and Power Engineering written by Cungang Hu and published by Springer Nature. This book was released on 2022-09-02 with total page 733 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book will be a collection of the papers presented in the 2021 International Joint Conference on Energy, Electrical and Power Engineering (CoEEPE’21), covering new and renewable energy, electrical and power engineering. It is expected to report the latest technological developments in the fields developed by academic researchers and industrial practitioners, with a focus on power electronics, energy storage and system control in energy and electrical power systems. The applications and dissemination of these technologies will benefit research society as new research directions are getting more and more inter-disciplinary which require researchers from different research areas to come together and form ideas jointly. It will also benefit the electrical engineering and power industry as we are now experiencing a new wave of industrial revelation, that is, electrification, intelligentization and digitalization of our transport, manufacturing process and way of thinking.

SiC Materials and Devices

Author : Michael Shur
Publisher : World Scientific
ISBN 13 : 9812568352
Total Pages : 342 pages
Book Rating : 4.8/5 (125 download)

DOWNLOAD NOW!

Book Synopsis SiC Materials and Devices by : Michael Shur

Download or read book SiC Materials and Devices written by Michael Shur and published by World Scientific. This book was released on 2006 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt: After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices ? power switching Schottky diodes and high temperature MESFETs ? are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology.

Advancing Silicon Carbide Electronics Technology I

Author : Konstantinos Zekentes
Publisher : Materials Research Forum LLC
ISBN 13 : 1945291850
Total Pages : 249 pages
Book Rating : 4.9/5 (452 download)

DOWNLOAD NOW!

Book Synopsis Advancing Silicon Carbide Electronics Technology I by : Konstantinos Zekentes

Download or read book Advancing Silicon Carbide Electronics Technology I written by Konstantinos Zekentes and published by Materials Research Forum LLC. This book was released on 2018-09-20 with total page 249 pages. Available in PDF, EPUB and Kindle. Book excerpt: The rapidly advancing Silicon Carbide technology has a great potential in high temperature and high frequency electronics. High thermal stability and outstanding chemical inertness make SiC an excellent material for high-power, low-loss semiconductor devices. The present volume presents the state of the art of SiC device fabrication and characterization. Topics covered include: SiC surface cleaning and etching techniques; electrical characterization methods and processing of ohmic contacts to silicon carbide; analysis of contact resistivity dependence on material properties; limitations and accuracy of contact resistivity measurements; ohmic contact fabrication and test structure design; overview of different metallization schemes and processing technologies; thermal stability of ohmic contacts to SiC, their protection and compatibility with device processing; Schottky contacts to SiC; Schottky barrier formation; Schottky barrier inhomogeneity in SiC materials; technology and design of 4H-SiC Schottky and Junction Barrier Schottky diodes; Si/SiC heterojunction diodes; applications of SiC Schottky diodes in power electronics and temperature/light sensors; high power SiC unipolar and bipolar switching devices; different types of SiC devices including material and technology constraints on device performance; applications in the area of metal contacts to silicon carbide; status and prospects of SiC power devices.

Silicon Carbide

Author : Wolfgang J. Choyke
Publisher : Springer Science & Business Media
ISBN 13 : 3642188702
Total Pages : 911 pages
Book Rating : 4.6/5 (421 download)

DOWNLOAD NOW!

Book Synopsis Silicon Carbide by : Wolfgang J. Choyke

Download or read book Silicon Carbide written by Wolfgang J. Choyke and published by Springer Science & Business Media. This book was released on 2013-04-17 with total page 911 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since the 1997 publication of "Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology" edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC field. So there is a growing need to update the scientific community on the important events in research and development since then. The editors have again gathered an outstanding team of the world's leading SiC researchers and design engineers to write on the most recent developments in SiC.

Fundamentals of Silicon Carbide Technology

Author : Tsunenobu Kimoto
Publisher : John Wiley & Sons
ISBN 13 : 1118313550
Total Pages : 565 pages
Book Rating : 4.1/5 (183 download)

DOWNLOAD NOW!

Book Synopsis Fundamentals of Silicon Carbide Technology by : Tsunenobu Kimoto

Download or read book Fundamentals of Silicon Carbide Technology written by Tsunenobu Kimoto and published by John Wiley & Sons. This book was released on 2014-09-23 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.

Silicon Carbide Power Devices

Author : B. Jayant Baliga
Publisher : World Scientific
ISBN 13 : 9812774521
Total Pages : 526 pages
Book Rating : 4.8/5 (127 download)

DOWNLOAD NOW!

Book Synopsis Silicon Carbide Power Devices by : B. Jayant Baliga

Download or read book Silicon Carbide Power Devices written by B. Jayant Baliga and published by World Scientific. This book was released on 2006-01-05 with total page 526 pages. Available in PDF, EPUB and Kindle. Book excerpt: Power semiconductor devices are widely used for the control and management of electrical energy. The improving performance of power devices has enabled cost reductions and efficiency increases resulting in lower fossil fuel usage and less environmental pollution. This book provides the first cohesive treatment of the physics and design of silicon carbide power devices with an emphasis on unipolar structures. It uses the results of extensive numerical simulations to elucidate the operating principles of these important devices. Sample Chapter(s). Chapter 1: Introduction (72 KB). Contents: Material Properties and Technology; Breakdown Voltage; PiN Rectifiers; Schottky Rectifiers; Shielded Schottky Rectifiers; Metal-Semiconductor Field Effect Transistors; The Baliga-Pair Configuration; Planar Power MOSFETs; Shielded Planar MOSFETs; Trench-Gate Power MOSFETs; Shielded Trendch-Gate MOSFETs; Charge Coupled Structures; Integral Diodes; Lateral High Voltage FETs; Synopsis. Readership: For practising engineers working on power devices, and as a supplementary textbook for a graduate level course on power devices.

Silicon Carbide

Author : Peter Friedrichs
Publisher : John Wiley & Sons
ISBN 13 : 3527629068
Total Pages : 528 pages
Book Rating : 4.5/5 (276 download)

DOWNLOAD NOW!

Book Synopsis Silicon Carbide by : Peter Friedrichs

Download or read book Silicon Carbide written by Peter Friedrichs and published by John Wiley & Sons. This book was released on 2011-04-08 with total page 528 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book prestigiously covers our current understanding of SiC as a semiconductor material in electronics. Its physical properties make it more promising for high-powered devices than silicon. The volume is devoted to the material and covers methods of epitaxial and bulk growth. Identification and characterization of defects is discussed in detail. The contributions help the reader to develop a deeper understanding of defects by combining theoretical and experimental approaches. Apart from applications in power electronics, sensors, and NEMS, SiC has recently gained new interest as a substrate material for the manufacture of controlled graphene. SiC and graphene research is oriented towards end markets and has high impact on areas of rapidly growing interest like electric vehicles. The list of contributors reads like a "Who's Who" of the SiC community, strongly benefiting from collaborations between research institutions and enterprises active in SiC crystal growth and device development.

Wide Bandgap Semiconductor Power Devices

Author : B. Jayant Baliga
Publisher : Woodhead Publishing
ISBN 13 : 0081023073
Total Pages : 420 pages
Book Rating : 4.0/5 (81 download)

DOWNLOAD NOW!

Book Synopsis Wide Bandgap Semiconductor Power Devices by : B. Jayant Baliga

Download or read book Wide Bandgap Semiconductor Power Devices written by B. Jayant Baliga and published by Woodhead Publishing. This book was released on 2018-10-17 with total page 420 pages. Available in PDF, EPUB and Kindle. Book excerpt: Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why these devices are superior to existing silicon devices. The book lays the groundwork for an understanding of an array of applications and anticipated benefits in energy savings. Authored by the Founder of the Power Semiconductor Research Center at North Carolina State University (and creator of the IGBT device), Dr. B. Jayant Baliga is one of the highest regarded experts in the field. He thus leads this team who comprehensively review the materials, device physics, design considerations and relevant applications discussed. - Comprehensively covers power electronic devices, including materials (both gallium nitride and silicon carbide), physics, design considerations, and the most promising applications - Addresses the key challenges towards the realization of wide bandgap power electronic devices, including materials defects, performance and reliability - Provides the benefits of wide bandgap semiconductors, including opportunities for cost reduction and social impact

SiC Materials and Devices

Author :
Publisher : Academic Press
ISBN 13 : 0080864503
Total Pages : 435 pages
Book Rating : 4.0/5 (88 download)

DOWNLOAD NOW!

Book Synopsis SiC Materials and Devices by :

Download or read book SiC Materials and Devices written by and published by Academic Press. This book was released on 1998-07-02 with total page 435 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume addresses the subject of materials science, specifically the materials aspects, device applications, and fabricating technology of SiC.

Proceedings of the 4th International Conference on Electrical and Information Technologies for Rail Transportation (EITRT) 2019

Author : Limin Jia
Publisher : Springer Nature
ISBN 13 : 9811528624
Total Pages : 869 pages
Book Rating : 4.8/5 (115 download)

DOWNLOAD NOW!

Book Synopsis Proceedings of the 4th International Conference on Electrical and Information Technologies for Rail Transportation (EITRT) 2019 by : Limin Jia

Download or read book Proceedings of the 4th International Conference on Electrical and Information Technologies for Rail Transportation (EITRT) 2019 written by Limin Jia and published by Springer Nature. This book was released on 2020-04-07 with total page 869 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book reflects the latest research trends, methods and experimental results in the field of electrical and information technologies for rail transportation, which covers abundant state-of-the-art research theories and ideas. As a vital field of research that is highly relevant to current developments in a number of technological domains, the subjects it covered include intelligent computing, information processing, Communication Technology, Automatic Control, etc. The objective of the proceedings is to provide a major interdisciplinary forum for researchers, engineers, academicians as well as industrial professionals to present the most innovative research and development in the field of rail transportation electrical and information technologies. Engineers and researchers in academia, industry, and the government will also explore an insight view of the solutions that combine ideas from multiple disciplines in this field. The volumes serve as an excellent reference work for researchers and graduate students working on rail transportation, electrical and information technologies.

Advancing Silicon Carbide Electronics Technology I

Author : Konstantinos Zekentes
Publisher : Materials Research Forum LLC
ISBN 13 : 1945291842
Total Pages : 249 pages
Book Rating : 4.9/5 (452 download)

DOWNLOAD NOW!

Book Synopsis Advancing Silicon Carbide Electronics Technology I by : Konstantinos Zekentes

Download or read book Advancing Silicon Carbide Electronics Technology I written by Konstantinos Zekentes and published by Materials Research Forum LLC. This book was released on 2018-09-25 with total page 249 pages. Available in PDF, EPUB and Kindle. Book excerpt: The rapidly advancing Silicon Carbide technology has a great potential in high temperature and high frequency electronics. High thermal stability and outstanding chemical inertness make SiC an excellent material for high-power, low-loss semiconductor devices. The present volume presents the state of the art of SiC device fabrication and characterization. Topics covered include: SiC surface cleaning and etching techniques; electrical characterization methods and processing of ohmic contacts to silicon carbide; analysis of contact resistivity dependence on material properties; limitations and accuracy of contact resistivity measurements; ohmic contact fabrication and test structure design; overview of different metallization schemes and processing technologies; thermal stability of ohmic contacts to SiC, their protection and compatibility with device processing; Schottky contacts to SiC; Schottky barrier formation; Schottky barrier inhomogeneity in SiC materials; technology and design of 4H-SiC Schottky and Junction Barrier Schottky diodes; Si/SiC heterojunction diodes; applications of SiC Schottky diodes in power electronics and temperature/light sensors; high power SiC unipolar and bipolar switching devices; different types of SiC devices including material and technology constraints on device performance; applications in the area of metal contacts to silicon carbide; status and prospects of SiC power devices.

Silicon Carbide and Related Materials

Author :
Publisher :
ISBN 13 :
Total Pages : 868 pages
Book Rating : 4.3/5 (91 download)

DOWNLOAD NOW!

Book Synopsis Silicon Carbide and Related Materials by :

Download or read book Silicon Carbide and Related Materials written by and published by . This book was released on 2000 with total page 868 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Physics and Technology of Silicon Carbide Devices

Author : Yasuto Hijikata
Publisher : BoD – Books on Demand
ISBN 13 : 9535109170
Total Pages : 416 pages
Book Rating : 4.5/5 (351 download)

DOWNLOAD NOW!

Book Synopsis Physics and Technology of Silicon Carbide Devices by : Yasuto Hijikata

Download or read book Physics and Technology of Silicon Carbide Devices written by Yasuto Hijikata and published by BoD – Books on Demand. This book was released on 2012-10-16 with total page 416 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recently, some SiC power devices such as Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effect-transistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. However, to stably supply them and reduce their cost, further improvements for material characterizations and those for device processing are still necessary. This book abundantly describes recent technologies on manufacturing, processing, characterization, modeling, and so on for SiC devices. In particular, for explanation of technologies, I was always careful to argue physics underlying the technologies as much as possible. If this book could be a little helpful to progress of SiC devices, it will be my unexpected happiness.

Silicon Carbide and Related Materials 2004

Author : Roberta Nipoti
Publisher :
ISBN 13 :
Total Pages : 1134 pages
Book Rating : 4.:/5 (318 download)

DOWNLOAD NOW!

Book Synopsis Silicon Carbide and Related Materials 2004 by : Roberta Nipoti

Download or read book Silicon Carbide and Related Materials 2004 written by Roberta Nipoti and published by . This book was released on 2005 with total page 1134 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon Carbide (SiC), Gallium Nitride (GaN) and Diamond are examples of wide-bandgap semiconductors having chemical, electrical and optical properties which make them very attractive for the fabrication of high-power and high-frequency electronic devices, as well as of light-emitters and sensors which have to operate under harsh conditions. The book comprises the proceedings of the 5th edition of the European Conference on Silicon Carbide and Related Materials, held from the 31st August to the 4th September 2004 in Bologna, Italy. This conference series here continued its tradition of being the main European forum for exchanging results, and discussing progress, between those university and industry researchers who are most active in the fields of SiC and related materials. Attendees at the conference highlighted the progress made in material growth technology, characterization of material properties and technological processing for electronic applications. Many electronics devices were presented: including high-voltage, high power-density and high-temperature components; as well as microwave components. Radiation-hard sensors were also presented.These proceedings fully document the latest experimental and theoretical understanding of the growth of bulk and epitaxial layers, the properties of the resultant materials, the development of suitable processes and of electronic devices that can best exploit and benefit from the outstanding physical properties that are offered by wide-bandgap materials.