Characterization And Modeling Of Deep Submicron Mosfets Including Frequency Effects

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Characterization and Modeling of SOI RF Integrated Components

Author : Morin Dehan
Publisher : Presses univ. de Louvain
ISBN 13 : 9782930344393
Total Pages : 238 pages
Book Rating : 4.3/5 (443 download)

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Book Synopsis Characterization and Modeling of SOI RF Integrated Components by : Morin Dehan

Download or read book Characterization and Modeling of SOI RF Integrated Components written by Morin Dehan and published by Presses univ. de Louvain. This book was released on 2003 with total page 238 pages. Available in PDF, EPUB and Kindle. Book excerpt: The boom of mobile communications leads to an increasing request of low cost and low power mixed mode integrated circuits. Maturity of SOI technology, and recent progresses of MOSFET's microwave performances, explain the success of silicon as compared to III-V technologies for low-cost multigigahertz analog applications. The design of efficient circuits requires accurate, wide-band models for both active and passive elements. Within this frame, passive and active components fabricated in SOI technologies have been studied. Various topologies of integrated transmission lines, like Coplanar Waveguides or thin film microstrip lines, have been analyzed. Also, a new physical model of integrated inductors has been developed. This model, based on a coupled line analysis of square spiral inductors, is scalable and independent of the technology used. Inductors with various spacing between strips, conductor widths, or number of turns can be simulated on different multi-layered substrates. Each layer that composes the substrate is defined using its electrical properties (permittivity, permeability, conductivity). The performances of integrated sub-micron MOSFETs are analyzed. New alternative structures of transistor (the Graded Channel MOSFET and the Dynamic Threshold MOSFET) are proposed to increase the performances of a CMOS technology for for analog, low power, low voltage, and microwave applications. They are studied from Low to High frequency. The graded channel MOSFET is an asymmetric doped channel MOSFET's which bring solutions for the problems of premature drain break-down, hot carrier effects, and threshold voltage (Vth) roll-off issues in deep submicrometer devices. The GCMOS processing is fully compatible with the conventional SOI MOSFET process flow, with no additional steps needed. The dynamic threshold voltage MOS is a MOS transistor for which the gate and the body channel are tied together. All DTMOS electrical properties can be deduced from standard MOS theory by introducing Vbs = Vgs. The main advantage of DTMOS over conventional MOS is its higher drive current at low bias conditions. To keep the body to source current as low as possible, the body bias voltage must be kept lower than 0.7 V. It seems obvious that the DTMOS transistor is an attractive component for low voltage applications.

Cmos Rf Modeling, Characterization And Applications

Author : M Jamal Deen
Publisher : World Scientific
ISBN 13 : 9814488925
Total Pages : 422 pages
Book Rating : 4.8/5 (144 download)

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Book Synopsis Cmos Rf Modeling, Characterization And Applications by : M Jamal Deen

Download or read book Cmos Rf Modeling, Characterization And Applications written by M Jamal Deen and published by World Scientific. This book was released on 2002-04-10 with total page 422 pages. Available in PDF, EPUB and Kindle. Book excerpt: CMOS technology has now reached a state of evolution, in terms of both frequency and noise, where it is becoming a serious contender for radio frequency (RF) applications in the GHz range. Cutoff frequencies of about 50 GHz have been reported for 0.18 µm CMOS technology, and are expected to reach about 100 GHz when the feature size shrinks to 100 nm within a few years. This translates into CMOS circuit operating frequencies well into the GHz range, which covers the frequency range of many of today's popular wireless products, such as cell phones, GPS (Global Positioning System) and Bluetooth. Of course, the great interest in RF CMOS comes from the obvious advantages of CMOS technology in terms of production cost, high-level integration, and the ability to combine digital, analog and RF circuits on the same chip. This book discusses many of the challenges facing the CMOS RF circuit designer in terms of device modeling and characterization, which are crucial issues in circuit simulation and design.

Characterization and Modeling of Advanced Gate Dielectrics

Author : Kevin J. Yang
Publisher :
ISBN 13 :
Total Pages : 284 pages
Book Rating : 4.:/5 (34 download)

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Book Synopsis Characterization and Modeling of Advanced Gate Dielectrics by : Kevin J. Yang

Download or read book Characterization and Modeling of Advanced Gate Dielectrics written by Kevin J. Yang and published by . This book was released on 2002 with total page 284 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Compact Modeling

Author : Gennady Gildenblat
Publisher : Springer Science & Business Media
ISBN 13 : 9048186145
Total Pages : 531 pages
Book Rating : 4.0/5 (481 download)

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Book Synopsis Compact Modeling by : Gennady Gildenblat

Download or read book Compact Modeling written by Gennady Gildenblat and published by Springer Science & Business Media. This book was released on 2010-06-22 with total page 531 pages. Available in PDF, EPUB and Kindle. Book excerpt: Most of the recent texts on compact modeling are limited to a particular class of semiconductor devices and do not provide comprehensive coverage of the field. Having a single comprehensive reference for the compact models of most commonly used semiconductor devices (both active and passive) represents a significant advantage for the reader. Indeed, several kinds of semiconductor devices are routinely encountered in a single IC design or in a single modeling support group. Compact Modeling includes mostly the material that after several years of IC design applications has been found both theoretically sound and practically significant. Assigning the individual chapters to the groups responsible for the definitive work on the subject assures the highest possible degree of expertise on each of the covered models.

Tradeoffs and Optimization in Analog CMOS Design

Author : David Binkley
Publisher : John Wiley & Sons
ISBN 13 : 047003369X
Total Pages : 632 pages
Book Rating : 4.4/5 (7 download)

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Book Synopsis Tradeoffs and Optimization in Analog CMOS Design by : David Binkley

Download or read book Tradeoffs and Optimization in Analog CMOS Design written by David Binkley and published by John Wiley & Sons. This book was released on 2008-09-15 with total page 632 pages. Available in PDF, EPUB and Kindle. Book excerpt: Analog CMOS integrated circuits are in widespread use for communications, entertainment, multimedia, biomedical, and many other applications that interface with the physical world. Although analog CMOS design is greatly complicated by the design choices of drain current, channel width, and channel length present for every MOS device in a circuit, these design choices afford significant opportunities for optimizing circuit performance. This book addresses tradeoffs and optimization of device and circuit performance for selections of the drain current, inversion coefficient, and channel length, where channel width is implicitly considered. The inversion coefficient is used as a technology independent measure of MOS inversion that permits design freely in weak, moderate, and strong inversion. This book details the significant performance tradeoffs available in analog CMOS design and guides the designer towards optimum design by describing: An interpretation of MOS modeling for the analog designer, motivated by the EKV MOS model, using tabulated hand expressions and figures that give performance and tradeoffs for the design choices of drain current, inversion coefficient, and channel length; performance includes effective gate-source bias and drain-source saturation voltages, transconductance efficiency, transconductance distortion, normalized drain-source conductance, capacitances, gain and bandwidth measures, thermal and flicker noise, mismatch, and gate and drain leakage current Measured data that validates the inclusion of important small-geometry effects like velocity saturation, vertical-field mobility reduction, drain-induced barrier lowering, and inversion-level increases in gate-referred, flicker noise voltage In-depth treatment of moderate inversion, which offers low bias compliance voltages, high transconductance efficiency, and good immunity to velocity saturation effects for circuits designed in modern, low-voltage processes Fabricated design examples that include operational transconductance amplifiers optimized for various tradeoffs in DC and AC performance, and micropower, low-noise preamplifiers optimized for minimum thermal and flicker noise A design spreadsheet, available at the book web site, that facilitates rapid, optimum design of MOS devices and circuits Tradeoffs and Optimization in Analog CMOS Design is the first book dedicated to this important topic. It will help practicing analog circuit designers and advanced students of electrical engineering build design intuition, rapidly optimize circuit performance during initial design, and minimize trial-and-error circuit simulations.

Noise in Devices and Circuits

Author :
Publisher :
ISBN 13 :
Total Pages : 546 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Noise in Devices and Circuits by :

Download or read book Noise in Devices and Circuits written by and published by . This book was released on 2003 with total page 546 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Low-Frequency Noise in Advanced MOS Devices

Author : Martin Haartman
Publisher : Springer Science & Business Media
ISBN 13 : 1402059108
Total Pages : 224 pages
Book Rating : 4.4/5 (2 download)

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Book Synopsis Low-Frequency Noise in Advanced MOS Devices by : Martin Haartman

Download or read book Low-Frequency Noise in Advanced MOS Devices written by Martin Haartman and published by Springer Science & Business Media. This book was released on 2007-08-23 with total page 224 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is an introduction to noise, describing fundamental noise sources and basic circuit analysis, discussing characterization of low-frequency noise and offering practical advice that bridges concepts of noise theory and modelling, characterization, CMOS technology and circuits. The text offers the latest research, reviewing the most recent publications and conference presentations. The book concludes with an introduction to noise in analog/RF circuits and describes how low-frequency noise can affect these circuits.

Solid State Circuits Technologies

Author : Jacobus Swart
Publisher : BoD – Books on Demand
ISBN 13 : 9533070455
Total Pages : 476 pages
Book Rating : 4.5/5 (33 download)

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Book Synopsis Solid State Circuits Technologies by : Jacobus Swart

Download or read book Solid State Circuits Technologies written by Jacobus Swart and published by BoD – Books on Demand. This book was released on 2010-01-01 with total page 476 pages. Available in PDF, EPUB and Kindle. Book excerpt: The evolution of solid-state circuit technology has a long history within a relatively short period of time. This technology has lead to the modern information society that connects us and tools, a large market, and many types of products and applications. The solid-state circuit technology continuously evolves via breakthroughs and improvements every year. This book is devoted to review and present novel approaches for some of the main issues involved in this exciting and vigorous technology. The book is composed of 22 chapters, written by authors coming from 30 different institutions located in 12 different countries throughout the Americas, Asia and Europe. Thus, reflecting the wide international contribution to the book. The broad range of subjects presented in the book offers a general overview of the main issues in modern solid-state circuit technology. Furthermore, the book offers an in depth analysis on specific subjects for specialists. We believe the book is of great scientific and educational value for many readers. I am profoundly indebted to the support provided by all of those involved in the work. First and foremost I would like to acknowledge and thank the authors who worked hard and generously agreed to share their results and knowledge. Second I would like to express my gratitude to the Intech team that invited me to edit the book and give me their full support and a fruitful experience while working together to combine this book.

Analytical and Compact Models (BSIM3v3) for Deep Submicron CMOS

Author : Kai Chen
Publisher :
ISBN 13 :
Total Pages : 480 pages
Book Rating : 4.:/5 (34 download)

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Book Synopsis Analytical and Compact Models (BSIM3v3) for Deep Submicron CMOS by : Kai Chen

Download or read book Analytical and Compact Models (BSIM3v3) for Deep Submicron CMOS written by Kai Chen and published by . This book was released on 1998 with total page 480 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Simulation of Semiconductor Processes and Devices 2001

Author : Dimitris Tsoukalas
Publisher : Springer Science & Business Media
ISBN 13 : 3709162440
Total Pages : 463 pages
Book Rating : 4.7/5 (91 download)

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Book Synopsis Simulation of Semiconductor Processes and Devices 2001 by : Dimitris Tsoukalas

Download or read book Simulation of Semiconductor Processes and Devices 2001 written by Dimitris Tsoukalas and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 463 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains the Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes, SISPAD 01, held on September 5–7, 2001, in Athens. The conference provided an open forum for the presentation of the latest results and trends in process and device simulation. The trend towards shrinking device dimensions and increasing complexity in process technology demands the continuous development of advanced models describing basic physical phenomena involved. New simulation tools are developed to complete the hierarchy in the Technology Computer Aided Design simulation chain between microscopic and macroscopic approaches. The conference program featured 8 invited papers, 60 papers for oral presentation and 34 papers for poster presentation, selected from a total of 165 abstracts from 30 countries around the world. These papers disclose new and interesting concepts for simulating processes and devices.

Analog Circuit Design

Author : Willy M.C. Sansen
Publisher : Springer Science & Business Media
ISBN 13 : 0792386221
Total Pages : 394 pages
Book Rating : 4.7/5 (923 download)

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Book Synopsis Analog Circuit Design by : Willy M.C. Sansen

Download or read book Analog Circuit Design written by Willy M.C. Sansen and published by Springer Science & Business Media. This book was released on 1999-10-31 with total page 394 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume of Analog Circuit Design concentrates on three topics: (X)DSL and other communication systems; RF MOST models; and integrated filters and oscillators. The book comprises five chapters on the first topic with six each on the other two, all written by internationally recognized experts. They are tutorial in nature and together make a substantial contribution to improving the design of analog circuits. The book is divided into three parts: Part I: (X)DSL and other Communication Systems presents some examples of recent improved modem techniques which have resulted in much higher transmission speeds over the local telephone network. It also presents components for the implementation of different standards. Part II: RF MOST Models investigates the state of the art in RF MOST models. It compares the existing BSIM3v3, Philips' Model 9 and the EKV model with respect to their capability to accurately predict GHz performance with submicron CMOST technologies. It shows how it has now become quite feasible to model a MOST at very high frequencies, giving rise to an increased use of MOST technologies in RF applications. Part III: Integrated Filters and Oscillators illustrates how the increasing use of communication tools goes hand-in-hand with the design of analog filters and oscillators with greater flexibility and higher bandwidth.

Proceedings

Author :
Publisher :
ISBN 13 :
Total Pages : 608 pages
Book Rating : 4.X/5 (6 download)

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Book Synopsis Proceedings by :

Download or read book Proceedings written by and published by . This book was released on 1999 with total page 608 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Device Modeling for Analog and RF CMOS Circuit Design

Author : Trond Ytterdal
Publisher : John Wiley & Sons
ISBN 13 : 0470864346
Total Pages : 306 pages
Book Rating : 4.4/5 (78 download)

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Book Synopsis Device Modeling for Analog and RF CMOS Circuit Design by : Trond Ytterdal

Download or read book Device Modeling for Analog and RF CMOS Circuit Design written by Trond Ytterdal and published by John Wiley & Sons. This book was released on 2003-08-01 with total page 306 pages. Available in PDF, EPUB and Kindle. Book excerpt: Bridges the gap between device modelling and analog circuit design. Includes dedicated software enabling actual circuit design. Covers the three significant models: BSIM3, Model 9 &, and EKV. Presents practical guidance on device development and circuit implementation. The authors offer a combination of extensive academic and industrial experience.

Mosfet Modeling For Circuit Analysis And Design

Author : Carlos Galup-montoro
Publisher : World Scientific
ISBN 13 : 9814477974
Total Pages : 445 pages
Book Rating : 4.8/5 (144 download)

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Book Synopsis Mosfet Modeling For Circuit Analysis And Design by : Carlos Galup-montoro

Download or read book Mosfet Modeling For Circuit Analysis And Design written by Carlos Galup-montoro and published by World Scientific. This book was released on 2007-02-27 with total page 445 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach.Both an overview of the basic physics theory required to build compact MOSFET models and a unified treatment of inversion-charge and surface-potential models are provided. The needs of digital, analog and RF designers as regards the availability of simple equations for circuit designs are taken into account. Compact expressions for hand analysis or for automatic synthesis, valid in all operating regions, are presented throughout the book. All the main expressions for computer simulation used in the new generation compact models are derived.Since designers in advanced technologies are increasingly concerned with fluctuations, the modeling of fluctuations is strongly emphasized. A unified approach for both space (matching) and time (noise) fluctuations is introduced.

Charge-Based MOS Transistor Modeling

Author : Christian C. Enz
Publisher : John Wiley & Sons
ISBN 13 : 0470855452
Total Pages : 328 pages
Book Rating : 4.4/5 (78 download)

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Book Synopsis Charge-Based MOS Transistor Modeling by : Christian C. Enz

Download or read book Charge-Based MOS Transistor Modeling written by Christian C. Enz and published by John Wiley & Sons. This book was released on 2006-08-14 with total page 328 pages. Available in PDF, EPUB and Kindle. Book excerpt: Modern, large-scale analog integrated circuits (ICs) are essentially composed of metal-oxide semiconductor (MOS) transistors and their interconnections. As technology scales down to deep sub-micron dimensions and supply voltage decreases to reduce power consumption, these complex analog circuits are even more dependent on the exact behavior of each transistor. High-performance analog circuit design requires a very detailed model of the transistor, describing accurately its static and dynamic behaviors, its noise and matching limitations and its temperature variations. The charge-based EKV (Enz-Krummenacher-Vittoz) MOS transistor model for IC design has been developed to provide a clear understanding of the device properties, without the use of complicated equations. All the static, dynamic, noise, non-quasi-static models are completely described in terms of the inversion charge at the source and at the drain taking advantage of the symmetry of the device. Thanks to its hierarchical structure, the model offers several coherent description levels, from basic hand calculation equations to complete computer simulation model. It is also compact, with a minimum number of process-dependant device parameters. Written by its developers, this book provides a comprehensive treatment of the EKV charge-based model of the MOS transistor for the design and simulation of low-power analog and RF ICs. Clearly split into three parts, the authors systematically examine: the basic long-channel intrinsic charge-based model, including all the fundamental aspects of the EKV MOST model such as the basic large-signal static model, the noise model, and a discussion of temperature effects and matching properties; the extended charge-based model, presenting important information for understanding the operation of deep-submicron devices; the high-frequency model, setting out a complete MOS transistor model required for designing RF CMOS integrated circuits. Practising engineers and circuit designers in the semiconductor device and electronics systems industry will find this book a valuable guide to the modelling of MOS transistors for integrated circuits. It is also a useful reference for advanced students in electrical and computer engineering.

MOSFET Modeling & BSIM3 User’s Guide

Author : Yuhua Cheng
Publisher : Springer Science & Business Media
ISBN 13 : 0306470500
Total Pages : 467 pages
Book Rating : 4.3/5 (64 download)

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Book Synopsis MOSFET Modeling & BSIM3 User’s Guide by : Yuhua Cheng

Download or read book MOSFET Modeling & BSIM3 User’s Guide written by Yuhua Cheng and published by Springer Science & Business Media. This book was released on 2007-05-08 with total page 467 pages. Available in PDF, EPUB and Kindle. Book excerpt: Circuit simulation is essential in integrated circuit design, and the accuracy of circuit simulation depends on the accuracy of the transistor model. BSIM3v3 (BSIM for Berkeley Short-channel IGFET Model) has been selected as the first MOSFET model for standardization by the Compact Model Council, a consortium of leading companies in semiconductor and design tools. In the next few years, many fabless and integrated semiconductor companies are expected to switch from dozens of other MOSFET models to BSIM3. This will require many device engineers and most circuit designers to learn the basics of BSIM3. MOSFET Modeling & BSIM3 User's Guide explains the detailed physical effects that are important in modeling MOSFETs, and presents the derivations of compact model expressions so that users can understand the physical meaning of the model equations and parameters. It is the first book devoted to BSIM3. It treats the BSIM3 model in detail as used in digital, analog and RF circuit design. It covers the complete set of models, i.e., I-V model, capacitance model, noise model, parasitics model, substrate current model, temperature effect model and non quasi-static model. MOSFET Modeling & BSIM3 User's Guide not only addresses the device modeling issues but also provides a user's guide to the device or circuit design engineers who use the BSIM3 model in digital/analog circuit design, RF modeling, statistical modeling, and technology prediction. This book is written for circuit designers and device engineers, as well as device scientists worldwide. It is also suitable as a reference for graduate courses and courses in circuit design or device modelling. Furthermore, it can be used as a textbook for industry courses devoted to BSIM3. MOSFET Modeling & BSIM3 User's Guide is comprehensive and practical. It is balanced between the background information and advanced discussion of BSIM3. It is helpful to experts and students alike.

MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch

Author : Viranjay M. Srivastava
Publisher : Springer Science & Business Media
ISBN 13 : 3319011650
Total Pages : 209 pages
Book Rating : 4.3/5 (19 download)

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Book Synopsis MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch by : Viranjay M. Srivastava

Download or read book MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch written by Viranjay M. Srivastava and published by Springer Science & Business Media. This book was released on 2013-10-07 with total page 209 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as well as the Cylindrical Surrounding double-gate (CSDG) MOSFET. The effect of HFO2 (high dielectric material) in the design of DG MOSFET and CSDG MOSFET is also explored. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters, as well as testing of MOSFETs parameters using image acquisition.