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Author : Kevin J. Yang
Publisher :
ISBN 13 :
Total Pages : 284 pages
Book Rating : 4.:/5 (34 download)
Download or read book Characterization and Modeling of Advanced Gate Dielectrics written by Kevin J. Yang and published by . This book was released on 2002 with total page 284 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Mikhail Baklanov
Publisher : John Wiley & Sons
ISBN 13 : 0470065419
Total Pages : 508 pages
Book Rating : 4.4/5 (7 download)
Download or read book Dielectric Films for Advanced Microelectronics written by Mikhail Baklanov and published by John Wiley & Sons. This book was released on 2007-04-04 with total page 508 pages. Available in PDF, EPUB and Kindle. Book excerpt: The topic of thin films is an area of increasing importance in materials science, electrical engineering and applied solid state physics; with both research and industrial applications in microelectronics, computer manufacturing, and physical devices. Advanced, high-performance computers, high-definition TV, broadband imaging systems, flat-panel displays, robotic systems, and medical electronics and diagnostics are a few examples of the miniaturized device technologies that depend on the utilization of thin film materials. This book presents an in-depth overview of the novel developments made by the scientific leaders in the area of modern dielectric films for advanced microelectronic applications. It contains clear, concise explanations of material science of dielectric films and their problem for device operation, including high-k, low-k, medium-k dielectric films and also specific features and requirements for dielectric films used in the packaging technology. A broad range of related topics are covered, from physical principles to design, fabrication, characterization, and applications of novel dielectric films.
Author : National Research Council
Publisher : National Academies Press
ISBN 13 : 0309085268
Total Pages : 364 pages
Book Rating : 4.3/5 (9 download)
Download or read book An Assessment of the National Institute of Standards and Technology Measurement and Standards Laboratories written by National Research Council and published by National Academies Press. This book was released on 2002-10-26 with total page 364 pages. Available in PDF, EPUB and Kindle. Book excerpt: This assessment of the technical quality and relevance of the programs of the Measurement and Standards Laboratories of the National Institute of Standards and Technology is the work of the 165 members of the National Research Council's (NRC's) Board on Assessment of NIST Programs and its panels. These individuals were chosen by the NRC for their technical expertise, their practical experience in running research programs, and their knowledge of industry's needs in basic measurements and standards. This assessment addresses the following: The technical merit of the laboratory programs relative to the state of the art worldwide; The effectiveness with which the laboratory programs are carried out and the results disseminated to their customers; The relevance of the laboratory programs to the needs of their customers; and The ability of the laboratories' facilities, equipment, and human resources to enable the laboratories to fulfill their mission and meet their customers' needs.
Author : Michel Houssa
Publisher : CRC Press
ISBN 13 : 1000687244
Total Pages : 500 pages
Book Rating : 4.0/5 (6 download)
Download or read book High k Gate Dielectrics written by Michel Houssa and published by CRC Press. This book was released on 2003-12-01 with total page 500 pages. Available in PDF, EPUB and Kindle. Book excerpt: The drive toward smaller and smaller electronic componentry has huge implications for the materials currently being used. As quantum mechanical effects begin to dominate, conventional materials will be unable to function at scales much smaller than those in current use. For this reason, new materials with higher electrical permittivity will be requ
Author :
Publisher :
ISBN 13 :
Total Pages : 62 pages
Book Rating : 4.3/5 (91 download)
Download or read book NISTIR. written by and published by . This book was released on 2001 with total page 62 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 696 pages
Book Rating : 4.3/5 (91 download)
Download or read book IBM Journal of Research and Development written by and published by . This book was released on 2006 with total page 696 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Electrochemical society. Meeting
Publisher : The Electrochemical Society
ISBN 13 : 1566778654
Total Pages : 950 pages
Book Rating : 4.5/5 (667 download)
Download or read book Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11 written by Electrochemical society. Meeting and published by The Electrochemical Society. This book was released on 2011 with total page 950 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue of ECS Transactions contains the peer-reviewed full length papers of the International Symposium on Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics held May 1-6, 2011 in Montreal as a part of the 219th Meeting of The Electrochemical Society. The papers address a very diverse range of topics. In addition to the deposition and characterization of the dielectrics, more specific topics addressed by the papers include applications, device characterization and reliability, interface states, interface traps, defects, transistor and gate oxide studies, and modeling.
Author : Niladri Pratap Maity
Publisher : CRC Press
ISBN 13 : 1000517764
Total Pages : 246 pages
Book Rating : 4.0/5 (5 download)
Download or read book High-k Gate Dielectric Materials written by Niladri Pratap Maity and published by CRC Press. This book was released on 2020-12-18 with total page 246 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume explores and addresses the challenges of high-k gate dielectric materials, one of the major concerns in the evolving semiconductor industry and the International Technology Roadmap for Semiconductors (ITRS). The application of high-k gate dielectric materials is a promising strategy that allows further miniaturization of microelectronic components. This book presents a broad review of SiO2 materials, including a brief historical note of Moore’s law, followed by reliability issues of the SiO2 based MOS transistor. It goes on to discuss the transition of gate dielectrics with an EOT ~ 1 nm and a selection of high-k materials. A review of the various deposition techniques of different high-k films is also discussed. High-k dielectrics theories (quantum tunneling effects and interface engineering theory) and applications of different novel MOSFET structures, like tunneling FET, are also covered in this book. The volume also looks at the important issues in the future of CMOS technology and presents an analysis of interface charge densities with the high-k material tantalum pentoxide. The issue of CMOS VLSI technology with the high-k gate dielectric materials is covered as is the advanced MOSFET structure, with its working structure and modeling. This timely volume will prove to be a valuable resource on both the fundamentals and the successful integration of high-k dielectric materials in future IC technology.
Author : Evgeni Gusev
Publisher : Springer Science & Business Media
ISBN 13 : 1402043678
Total Pages : 495 pages
Book Rating : 4.4/5 (2 download)
Download or read book Defects in HIgh-k Gate Dielectric Stacks written by Evgeni Gusev and published by Springer Science & Business Media. This book was released on 2006-02-15 with total page 495 pages. Available in PDF, EPUB and Kindle. Book excerpt: The goal of this NATO Advanced Research Workshop (ARW) entitled “Defects in Advanced High-k Dielectric Nano-electronic Semiconductor Devices”, which was held in St. Petersburg, Russia, from July 11 to 14, 2005, was to examine the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. The special feature of this workshop was focus on an important issue of defects in this novel class of materials. One of the key obstacles to high-k integration into Si nano-technology are the electronic defects in high-k materials. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. However, very little is known about the nature of the defects or about possible techniques to eliminate, or at least minimize them. Given the absence of a feasible alternative in the near future, well-focused scientific research and aggressive development programs on high-k gate dielectrics and related devices must continue for semiconductor electronics to remain a competitive income producing force in the global market.
Author : Tibor Grasser
Publisher : Springer Science & Business Media
ISBN 13 : 1461479096
Total Pages : 805 pages
Book Rating : 4.4/5 (614 download)
Download or read book Bias Temperature Instability for Devices and Circuits written by Tibor Grasser and published by Springer Science & Business Media. This book was released on 2013-10-22 with total page 805 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a single-source reference to one of the more challenging reliability issues plaguing modern semiconductor technologies, negative bias temperature instability. Readers will benefit from state-of-the art coverage of research in topics such as time dependent defect spectroscopy, anomalous defect behavior, stochastic modeling with additional metastable states, multiphonon theory, compact modeling with RC ladders and implications on device reliability and lifetime.
Author : Francis Balestra
Publisher : John Wiley & Sons
ISBN 13 : 1118622472
Total Pages : 518 pages
Book Rating : 4.1/5 (186 download)
Download or read book Nanoscale CMOS written by Francis Balestra and published by John Wiley & Sons. This book was released on 2013-03-01 with total page 518 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a comprehensive review of the state-of-the-art in the development of new and innovative materials, and of advanced modeling and characterization methods for nanoscale CMOS devices. Leading global industry bodies including the International Technology Roadmap for Semiconductors (ITRS) have created a forecast of performance improvements that will be delivered in the foreseeable future – in the form of a roadmap that will lead to a substantial enlargement in the number of materials, technologies and device architectures used in CMOS devices. This book addresses the field of materials development, which has been the subject of a major research drive aimed at finding new ways to enhance the performance of semiconductor technologies. It covers three areas that will each have a dramatic impact on the development of future CMOS devices: global and local strained and alternative materials for high speed channels on bulk substrate and insulator; very low access resistance; and various high dielectric constant gate stacks for power scaling. The book also provides information on the most appropriate modeling and simulation methods for electrical properties of advanced MOSFETs, including ballistic transport, gate leakage, atomistic simulation, and compact models for single and multi-gate devices, nanowire and carbon-based FETs. Finally, the book presents an in-depth investigation of the main nanocharacterization techniques that can be used for an accurate determination of transport parameters, interface defects, channel strain as well as RF properties, including capacitance-conductance, improved split C-V, magnetoresistance, charge pumping, low frequency noise, and Raman spectroscopy.
Author : Tarek Zaki
Publisher : Springer
ISBN 13 : 3319188968
Total Pages : 232 pages
Book Rating : 4.3/5 (191 download)
Download or read book Short-Channel Organic Thin-Film Transistors written by Tarek Zaki and published by Springer. This book was released on 2015-05-27 with total page 232 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work takes advantage of high-resolution silicon stencil masks to build air-stable complementary OTFTs using a low-temperature fabrication process. Plastic electronics based on organic thin-film transistors (OTFTs) pave the way for cheap, flexible and large-area products. Over the past few years, OTFTs have undergone remarkable advances in terms of reliability, performance and scale of integration. Many factors contribute to the allure of this technology; the masks exhibit excellent stiffness and stability, thus allowing OTFTs with submicrometer channel lengths and superb device uniformity to be patterned. Furthermore, the OTFTs employ an ultra-thin gate dielectric that provides a sufficiently high capacitance to enable the transistors to operate at voltages as low as 3 V. The critical challenges in this development are the subtle mechanisms that govern the properties of aggressively scaled OTFTs. These mechanisms, dictated by device physics, are well described and implemented into circuit-design tools to ensure adequate simulation accuracy.
Author : Shubham Tayal
Publisher : CRC Press
ISBN 13 : 1000438783
Total Pages : 176 pages
Book Rating : 4.0/5 (4 download)
Download or read book High-k Materials in Multi-Gate FET Devices written by Shubham Tayal and published by CRC Press. This book was released on 2021-09-16 with total page 176 pages. Available in PDF, EPUB and Kindle. Book excerpt: High-k Materials in Multi-Gate FET Devices focuses on high-k materials for advanced FET devices. It discusses emerging challenges in the engineering and applications and considers issues with associated technologies. It covers the various way of utilizing high-k dielectrics in multi-gate FETs for enhancing their performance at the device as well as circuit level. Provides basic knowledge about FET devices Presents the motivation behind multi-gate FETs, including current and future trends in transistor technologies Discusses fabrication and characterization of high-k materials Contains a comprehensive analysis of the impact of high-k dielectrics utilized in the gate-oxide and the gate-sidewall spacers on the GIDL of emerging multi-gate FET architectures Offers detailed application of high-k materials for advanced FET devices Considers future research directions This book is of value to researchers in materials science, electronics engineering, semiconductor device modeling, IT, and related disciplines studying nanodevices such as FinFET and Tunnel FET and device-circuit codesign issues.
Author : Jan Grym
Publisher : BoD – Books on Demand
ISBN 13 : 9533070803
Total Pages : 500 pages
Book Rating : 4.5/5 (33 download)
Download or read book Semiconductor Technologies written by Jan Grym and published by BoD – Books on Demand. This book was released on 2010-04-01 with total page 500 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor technologies continue to evolve and amaze us. New materials, new structures, new manufacturing tools, and new advancements in modelling and simulation form a breeding ground for novel high performance electronic and photonic devices. This book covers all aspects of semiconductor technology concerning materials, technological processes, and devices, including their modelling, design, integration, and manufacturing.
Author : ASM International
Publisher : ASM International
ISBN 13 : 1615039953
Total Pages : 643 pages
Book Rating : 4.6/5 (15 download)
Download or read book ISTFA 2012 written by ASM International and published by ASM International. This book was released on 2012 with total page 643 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Y. Obeng
Publisher : The Electrochemical Society
ISBN 13 : 1607687135
Total Pages : 130 pages
Book Rating : 4.6/5 (76 download)
Download or read book International Symposium on Functional Diversification of Semiconductor Electronics 3 (More-Than-Moore 3) written by Y. Obeng and published by The Electrochemical Society. This book was released on with total page 130 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : David G. Seiler
Publisher :
ISBN 13 :
Total Pages : 734 pages
Book Rating : 4.3/5 (91 download)
Download or read book Characterization and Metrology for ULSI Technology, 2000 written by David G. Seiler and published by . This book was released on 2001 with total page 734 pages. Available in PDF, EPUB and Kindle. Book excerpt:
