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Caracterisation Des Transistors Bipolaires A Heterojonction Sige A Tres Hautes Frequences
Download Caracterisation Des Transistors Bipolaires A Heterojonction Sige A Tres Hautes Frequences full books in PDF, epub, and Kindle. Read online Caracterisation Des Transistors Bipolaires A Heterojonction Sige A Tres Hautes Frequences ebook anywhere anytime directly on your device. Fast Download speed and no annoying ads. We cannot guarantee that every ebooks is available!
Book Synopsis Caractérisation des transistors bipolaires à hétérojonction SiGe à très hautes fréquences by : Jad Bazzi
Download or read book Caractérisation des transistors bipolaires à hétérojonction SiGe à très hautes fréquences written by Jad Bazzi and published by . This book was released on 2011 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Les TBH SiGe sont parmi les composants les plus rapides et sont utilisés pour les applications millimétriques. Des systèmes fonctionnent à 820GHz avec ces composants ont été déjà mis en œuvre. Afin de concevoir des circuits fonctionnant à ces fréquences très élevées, une analyse détaillée du comportement intrinsèque doit être effectuée. L'objectif principal de cette thèse est la caractérisation de la partie intrinsèque de ces composants. Une bonne précision de mesure dans la gamme de fréquences ondes millimétriques représente un vrai challenge, puisque les grandeurs intrinsèques du dispositifs ont beaucoup plus faibles que les données brutes de mesure auxquelles est associée la partie extrinsèque du composant. Afin de corriger la partie extrinsèque, des techniques de de-embedding spécifiques sont mises au point pour obtenir ces caractéristiques intrinsèques réelles. De plus, une technique de calibration directement sur la puce, sans utiliser de calkit, a été élaborée. Ceci permet de s'affranchir des effets de couplage entre la surface du standard de calibrage et les pointes de test hyperfréquences. L'ensemble a été validé par des simulations de type électromagnétique.
Book Synopsis Contribution à la modélisation et à la caractérisation en hautes fréquences des transistors bipolaires à hétérojonction Si/SiGe by : Bertrand Ardouin
Download or read book Contribution à la modélisation et à la caractérisation en hautes fréquences des transistors bipolaires à hétérojonction Si/SiGe written by Bertrand Ardouin and published by . This book was released on 2001 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Etude des phénomènes de bruit électrique dans les transistors bipolaires micro-ondes à hétérojonction Si/SiGe/Si by : Bart Van Haaren
Download or read book Etude des phénomènes de bruit électrique dans les transistors bipolaires micro-ondes à hétérojonction Si/SiGe/Si written by Bart Van Haaren and published by . This book was released on 1998 with total page 210 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis CARACTERISATION ELECTRIQUE DES DEFAUTS INDUITS LORS DE L'INTEGRATION DE LA BASE D'UN TRANSISTOR BIPOLAIRE A HETEROJONCTION SIGE EN TECHNOLOGIE BICMOS by : OSCAR.. DE BARROS
Download or read book CARACTERISATION ELECTRIQUE DES DEFAUTS INDUITS LORS DE L'INTEGRATION DE LA BASE D'UN TRANSISTOR BIPOLAIRE A HETEROJONCTION SIGE EN TECHNOLOGIE BICMOS written by OSCAR.. DE BARROS and published by . This book was released on 1997 with total page 222 pages. Available in PDF, EPUB and Kindle. Book excerpt: LES PROGRES DES TECHNIQUES D'EPITAXIE ONT PERMIS LA FABRICATION DE COUCHES DE SIGE CONTRAINT SUR SUBSTRAT SILICIUM ET LEUR MISE EN APPLICATION DANS DES TRANSISTORS BIPOLAIRES A HETEROJONCTION, PERMETTANT A LA TECHNOLOGIE SILICIUM D'ATTEINDRE DES PERFORMANCES DYNAMIQUES INTERESSANTES POUR LES APPLICATIONS HAUTE FREQUENCE. TOUTEFOIS L'INTEGRATION DE L'ALLIAGE SIGE DANS UNE FILIERE DOIT REPONDRE AU DOUBLE IMPERATIF DE QUALITE FINALE DE L'ALLIAGE ET DE PERTURBATION MINIMUM A APPORTER A LA FILIERE TECHNOLOGIQUE. C'EST DANS CET OBJECTIF ET DANS LE CADRE DE L'INTEGRATION DU TBH SIGE DANS UNE FILIERE BICMOS DEVELOPPEE AU CNET MEYLAN QUE S'INSCRIT CE SUJET DE THESE. AU COURS DE CE TRAVAIL, NOUS AVONS ETUDIE LA QUALITE DU SYSTEME EMETTEUR-BASE DES TRANSISTORS BIPOLAIRES A HETEROJONCTION A BASE SIGE A L'AIDE DE TECHNIQUES DE CARACTERISATION ELECTRIQUE, MESURE DE COURANT STATIQUE ET SPECTROSCOPIE DE TRANSITOIRE. LES RESULTATS EXPERIMENTAUX OBTENUS SUR DES TRANSITORS SIMPLE-POLYSILICIUM AUTOALIGNES ONT MIS EN EVIDENCE LA PRESENCE DE DEFAUTS DANS LA ZONE ACTIVE DU COMPOSANT, LOCALISES A LA PERIPHERIE DE LA JONCTION EMETTEUR-BASE LE LONG DES ESPACEURS SIO#2. L'ENERGIE D'ACTIVATION APPARENTE DE CES PIEGES EST DE 0,6 EV, CE QUI EN FAIT DES CENTRES DE RECOMBINAISON TRES EFFICACES. CES DEFAUTS AYANT PU ETRE CORRELES A L'ETAPE DE GRAVURE LORS DE LA DEFINITION DU SYSTEME EMETTEUR-BASE, LA QUALITE CRISTALLINE DES COUCHES EPITAXIEES N'EST DONC PAS DEGRADEE PAR LE PROCESS POST-EPITAXIE. CE RESULTAT EST UNE CONTRIBUTION AU CHOIX D'UNE NOUVELLE ARCHITECTURE POUR LES FILIERES DEVELOPPEES PLUS RECEMMENT, DANS LAQUELLE LA ZONE ACTIVE EST ELOIGNEE DES ZONES GRAVEES. LES ETUDES INITIEES SUR LES TRANSISTORS SIMPLE-POLYSILICIUM QUASI-AUTOALIGNES DE CETTE FILIERE MONTRENT LA PRESENCE DE PLUSIEURS NIVEAUX PROFONDS DANS LA BASE DU COMPOSANT, CE QUI EST UN POINT CRITIQUE POUR LE BON FONCTIONNEMENT DE CES COMPOSANTS.
Download or read book HEMTs and HBTs written by Fazal Ali and published by Artech House Microwave Library. This book was released on 1991 with total page 404 pages. Available in PDF, EPUB and Kindle. Book excerpt: Presents reprinted tutorial papers on HEMTs, HBTs and heterojunctions, including papers which report major achievements of the HEMT and HBT technologies in the fields of microwave, millimeter-wave and digital ICs.
Book Synopsis Influence of Temperature on Microelectronics and System Reliability by : Pradeep Lall
Download or read book Influence of Temperature on Microelectronics and System Reliability written by Pradeep Lall and published by CRC Press. This book was released on 2020-07-09 with total page 332 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book raises the level of understanding of thermal design criteria. It provides the design team with sufficient knowledge to help them evaluate device architecture trade-offs and the effects of operating temperatures. The author provides readers a sound scientific basis for system operation at realistic steady state temperatures without reliability penalties. Higher temperature performance than is commonly recommended is shown to be cost effective in production for life cycle costs. The microelectronic package considered in the book is assumed to consist of a semiconductor device with first-level interconnects that may be wirebonds, flip-chip, or tape automated bonds; die attach; substrate; substrate attach; case; lid; lid seal; and lead seal. The temperature effects on electrical parameters of both bipolar and MOSFET devices are discussed, and models quantifying the temperature effects on package elements are identified. Temperature-related models have been used to derive derating criteria for determining the maximum and minimum allowable temperature stresses for a given microelectronic package architecture. The first chapter outlines problems with some of the current modeling strategies. The next two chapters present microelectronic device failure mechanisms in terms of their dependence on steady state temperature, temperature cycle, temperature gradient, and rate of change of temperature at the chip and package level. Physics-of-failure based models used to characterize these failure mechanisms are identified and the variabilities in temperature dependence of each of the failure mechanisms are characterized. Chapters 4 and 5 describe the effects of temperature on the performance characteristics of MOS and bipolar devices. Chapter 6 discusses using high-temperature stress screens, including burn-in, for high-reliability applications. The burn-in conditions used by some manufacturers are examined and a physics-of-failure approach is described. The
Book Synopsis Process and Device Modeling by : Walter L. Engl
Download or read book Process and Device Modeling written by Walter L. Engl and published by North Holland. This book was released on 1986 with total page 480 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is the first of a new, seven volume series which aims to provide a comprehensive description of basic methods and technologies related to CAD for VLSI. The series includes up-to-date results and latest developments, with a good balance between theoretical and practical aspects of VLSI design. In this volume emphasis is placed on the basics of modeling, the opening chapters being devoted to fundamental process and device modeling. The following chapters cover different aspects of device modeling and also bridge to process simulation on the one side, and circuit simulation on the other. A systems approach to physical modeling, spanning the whole range of topics covered, is also dealt with. Recent conferences on the subject have signalled that physical modeling combined with technology, device and circuit optimization, will undoubtedly become a major trend in the future.
Book Synopsis Scientific Canadian Mechanics' Magazine and Patent Office Record by : Canada. Patent Office
Download or read book Scientific Canadian Mechanics' Magazine and Patent Office Record written by Canada. Patent Office and published by . This book was released on 1966-03 with total page 1070 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Masters Theses in the Pure and Applied Sciences by : Wade H. Shafer
Download or read book Masters Theses in the Pure and Applied Sciences written by Wade H. Shafer and published by Springer. This book was released on 1976 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt: Masters Theses in the Pure and Applied Sciences was first conceived, published, and dis· seminated by the Center for Information and Numerical Data Analysis and Synthesis (CINDAS) *at Purdue University in 1957, starting its coverage of theses with the academic year 1955. Beginning with Volume 13, the printing and dissemination phases of the ac· tivity were transferred to University Microfilms/Xerox of Ann Arbor, Michigan, with the thought that such an arrangement would be more beneficial to the academic and general scientific and technical community. After five years of this joint undertaking we had concluded that it was in the interest of all concerned if the printing and distribution of the volume were handled by an international publishing house to assure improved service and broader dissemination. Hence, starting with Volume 18, Masters Theses in the Pure and Applied Sciences has been disseminated on a worldwide basis by Plenum Publishing Corporation of New York, and in the same year the coverage was broadened to include Canadian universities. All back issues can also be ordered from Plenum. We have reported in Volume 20 (thesis year 1975) a total of 10,374 theses titles from 28 Canadian and 239 United States universities. We are sure that this broader base for theses titles reported will greatly enhance the value of this important annual reference work. The organization of Volume 20 is identical to that of past years. It consists of theses titles arranged by discipline and by university within each discipline.
