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Download Bulk Silicon Germanium Heterojunction Bipolar Transistor Process Feature Implications For Single Event Effects Analysis And Charge Collection Mechanisms full books in PDF, epub, and Kindle. Read online Bulk Silicon Germanium Heterojunction Bipolar Transistor Process Feature Implications For Single Event Effects Analysis And Charge Collection Mechanisms ebook anywhere anytime directly on your device. Fast Download speed and no annoying ads. We cannot guarantee that every ebooks is available!
Author :
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ISBN 13 :
Total Pages : 1048 pages
Book Rating : 4.3/5 (91 download)
Download or read book Physics Briefs written by and published by . This book was released on 1990 with total page 1048 pages. Available in PDF, EPUB and Kindle. Book excerpt:
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ISBN 13 :
Total Pages : 2668 pages
Book Rating : 4.3/5 (91 download)
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2668 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Peter Ashburn
Publisher : John Wiley & Sons
ISBN 13 : 0470090731
Total Pages : 286 pages
Book Rating : 4.4/5 (7 download)
Download or read book SiGe Heterojunction Bipolar Transistors written by Peter Ashburn and published by John Wiley & Sons. This book was released on 2004-02-06 with total page 286 pages. Available in PDF, EPUB and Kindle. Book excerpt: SiGe HBTs is a hot topic within the microelectronics community because of its applications potential within integrated circuits operating at radio frequencies. Applications range from high speed optical networking to wireless communication devices. The addition of germanium to silicon technologies to form silicon germanium (SiGe) devices has created a revolution in the semiconductor industry. These transistors form the enabling devices in a wide range of products for wireless and wired communications. This book features: SiGe products include chip sets for wireless cellular handsets as well as WLAN and high-speed wired network applications Describes the physics and technology of SiGe HBTs, with coverage of Si and Ge bipolar transistors Written with the practising engineer in mind, this book explains the operating principles and applications of bipolar transistor technology. Essential reading for practising microelectronics engineers and researchers. Also, optical communications engineers and communication technology engineers. An ideal reference tool for masters level students in microelectronics and electronics engineering.
Author : Helmuth Spieler
Publisher : OUP Oxford
ISBN 13 : 0191523658
Total Pages : 513 pages
Book Rating : 4.1/5 (915 download)
Download or read book Semiconductor Detector Systems written by Helmuth Spieler and published by OUP Oxford. This book was released on 2005-08-25 with total page 513 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor sensors patterned at the micron scale combined with custom-designed integrated circuits have revolutionized semiconductor radiation detector systems. Designs covering many square meters with millions of signal channels are now commonplace in high-energy physics and the technology is finding its way into many other fields, ranging from astrophysics to experiments at synchrotron light sources and medical imaging. This book is the first to present a comprehensive discussion of the many facets of highly integrated semiconductor detector systems, covering sensors, signal processing, transistors and circuits, low-noise electronics, and radiation effects. The diversity of design approaches is illustrated in a chapter describing systems in high-energy physics, astronomy, and astrophysics. Finally a chapter "Why things don't work" discusses common pitfalls. Profusely illustrated, this book provides a unique reference in a key area of modern science.
Author : Christian W. Fabjan
Publisher : Springer Nature
ISBN 13 : 3030353184
Total Pages : 1083 pages
Book Rating : 4.0/5 (33 download)
Download or read book Particle Physics Reference Library written by Christian W. Fabjan and published by Springer Nature. This book was released on 2020 with total page 1083 pages. Available in PDF, EPUB and Kindle. Book excerpt: This second open access volume of the handbook series deals with detectors, large experimental facilities and data handling, both for accelerator and non-accelerator based experiments. It also covers applications in medicine and life sciences. A joint CERN-Springer initiative, the "Particle Physics Reference Library" provides revised and updated contributions based on previously published material in the well-known Landolt-Boernstein series on particle physics, accelerators and detectors (volumes 21A, B1,B2,C), which took stock of the field approximately one decade ago. Central to this new initiative is publication under full open access
Author : IEEE Staff
Publisher :
ISBN 13 : 9781728138299
Total Pages : pages
Book Rating : 4.1/5 (382 download)
Download or read book 2019 IEEE Radiation Effects Data Workshop written by IEEE Staff and published by . This book was released on 2019-07-08 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Part of the 2019 IEEE Nuclear and Space Radiation Effects Conference (NSREC) It is a poster presentation of radiation testing of electronics and radiation test facilities There will be between 50 to 70 posters
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ISBN 13 :
Total Pages : 52 pages
Book Rating : 4.:/5 (31 download)
Download or read book HZETRN written by and published by . This book was released on 1991 with total page 52 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : E. Ajith Amerasekera
Publisher : John Wiley & Sons
ISBN 13 :
Total Pages : 434 pages
Book Rating : 4.3/5 (91 download)
Download or read book ESD in Silicon Integrated Circuits written by E. Ajith Amerasekera and published by John Wiley & Sons. This book was released on 2002-05-22 with total page 434 pages. Available in PDF, EPUB and Kindle. Book excerpt: * Examines the various methods available for circuit protection, including coverage of the newly developed ESD circuit protection schemes for VLSI circuits. * Provides guidance on the implementation of circuit protection measures. * Includes new sections on ESD design rules, layout approaches, package effects, and circuit concepts. * Reviews the new Charged Device Model (CDM) test method and evaluates design requirements necessary for circuit protection.
Author : Dieter K. Schroder
Publisher : John Wiley & Sons
ISBN 13 : 0471739065
Total Pages : 800 pages
Book Rating : 4.4/5 (717 download)
Download or read book Semiconductor Material and Device Characterization written by Dieter K. Schroder and published by John Wiley & Sons. This book was released on 2015-06-29 with total page 800 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.
Author : J.-P. Colinge
Publisher : Springer Science & Business Media
ISBN 13 : 9781402077739
Total Pages : 392 pages
Book Rating : 4.0/5 (777 download)
Download or read book Silicon-on-Insulator Technology: Materials to VLSI written by J.-P. Colinge and published by Springer Science & Business Media. This book was released on 2004-02-29 with total page 392 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon-on-Insulator Technology: Materials to VLSI, Third Edition, retraces the evolution of SOI materials, devices and circuits over a period of roughly twenty years. Twenty years of progress, research and development during which SOI material fabrication techniques have been born and abandoned, devices have been invented and forgotten, but, most importantly, twenty years during which SOI Technology has little by little proven it could outperform bulk silicon in every possible way. The turn of the century turned out to be a milestone for the semiconductor industry, as high-quality SOI wafers suddenly became available in large quantities. From then on, it took only a few years to witness the use of SOI technology in a wealth of applications ranging from audio amplifiers and wristwatches to 64-bit microprocessors. This book presents a complete and state-of-the-art review of SOI materials, devices and circuits. SOI fabrication and characterization techniques, SOI CMOS processing, and the physics of the SOI MOSFET receive an in-depth analysis. Silicon-on-Insulator Technology: Materials to VLSI, Third Edition, also describes the properties of other SOI devices, such as multiple gate MOSFETs, dynamic threshold devices and power MOSFETs. The advantages and performance of SOI circuits used in both niche and mainstream applications are discussed in detail. The SOI specialist will find this book invaluable as a source of compiled references covering the different aspects of SOI technology. For the non-specialist, the book serves an excellent introduction to the topic with detailed, yet simple and clear explanations. Silicon-on-Insulator Technology: Materials to VLSI, Third Edition is recommended for use as a textbook for classes on semiconductor device processing and physics at the graduate level.
Author : Marin Alexe
Publisher : Springer Science & Business Media
ISBN 13 : 9783540210498
Total Pages : 524 pages
Book Rating : 4.2/5 (14 download)
Download or read book Wafer Bonding written by Marin Alexe and published by Springer Science & Business Media. This book was released on 2004-05-14 with total page 524 pages. Available in PDF, EPUB and Kindle. Book excerpt: During the past decade direct wafer bonding has developed into a mature materials integration technology. This book presents state-of-the-art reviews of the most important applications of wafer bonding written by experts from industry and academia. The topics include bonding-based fabrication methods of silicon-on-insulator, photonic crystals, VCSELs, SiGe-based FETs, MEMS together with hybrid integration and laser lift-off. The non-specialist will learn about the basics of wafer bonding and its various application areas, while the researcher in the field will find up-to-date information about this fast-moving area, including relevant patent information.
Author : Wolfgang J. Choyke
Publisher : Springer Science & Business Media
ISBN 13 : 3642188702
Total Pages : 911 pages
Book Rating : 4.6/5 (421 download)
Download or read book Silicon Carbide written by Wolfgang J. Choyke and published by Springer Science & Business Media. This book was released on 2013-04-17 with total page 911 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since the 1997 publication of "Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology" edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC field. So there is a growing need to update the scientific community on the important events in research and development since then. The editors have again gathered an outstanding team of the world's leading SiC researchers and design engineers to write on the most recent developments in SiC.
Author : Michael Levinshtein
Publisher : World Scientific
ISBN 13 : 9812563954
Total Pages : 223 pages
Book Rating : 4.8/5 (125 download)
Download or read book Breakdown Phenomena in Semiconductors and Semiconductor Devices written by Michael Levinshtein and published by World Scientific. This book was released on 2005 with total page 223 pages. Available in PDF, EPUB and Kindle. Book excerpt: Impact ionization, avalanche and breakdown phenomena form the basis of many very interesting and important semiconductor devices, such as avalanche photodiodes, avalanche transistors, suppressors, sharpening diodes (diodes with delayed breakdown), as well as IMPATT and TRAPATT diodes. In order to provide maximal speed and power, many semiconductor devices must operate under or very close to breakdown conditions. Consequently, an acquaintance with breakdown phenomena is essential for scientists or engineers dealing with semiconductor devices.The aim of this book is to summarize the main experimental results on avalanche and breakdown phenomena in semiconductors and semiconductor devices and to analyze their features from a unified point of view. Attention is focused on the phenomenology of avalanche multiplication and the various kinds of breakdown phenomena and their qualitative analysis.
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ISBN 13 :
Total Pages : 1066 pages
Book Rating : 4.F/5 ( download)
Download or read book International Aerospace Abstracts written by and published by . This book was released on 1992 with total page 1066 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Michael Reisch
Publisher : Springer Science & Business Media
ISBN 13 : 9783540677024
Total Pages : 686 pages
Book Rating : 4.6/5 (77 download)
Download or read book High-Frequency Bipolar Transistors written by Michael Reisch and published by Springer Science & Business Media. This book was released on 2003-03-05 with total page 686 pages. Available in PDF, EPUB and Kindle. Book excerpt: This modern book-length treatment gives a detailed presentation of high-frequency bipolar transistors in silicon or silicon-germanium technology, with particular emphasis placed on today's advanced compact models and their physical foundations.
Author : Sandip Tiwari
Publisher : Academic Press
ISBN 13 : 148328929X
Total Pages : 845 pages
Book Rating : 4.4/5 (832 download)
Download or read book Compound Semiconductor Device Physics written by Sandip Tiwari and published by Academic Press. This book was released on 2013-10-22 with total page 845 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides one of the most rigorous treatments of compound semiconductor device physics yet published. A complete understanding of modern devices requires a working knowledge of low-dimensional physics, the use of statistical methods, and the use of one-, two-, and three-dimensional analytical and numerical analysis techniques. With its systematic and detailed**discussion of these topics, this book is ideal for both the researcher and the student. Although the emphasis of this text is on compound semiconductor devices, many of the principles discussed will also be useful to those interested in silicon devices. Each chapter ends with exercises that have been designed to reinforce concepts, to complement arguments or derivations, and to emphasize the nature of approximations by critically evaluating realistic conditions.One of the most rigorous treatments of compound semiconductor device physics yet published**Essential reading for a complete understanding of modern devices**Includes chapter-ending exercises to facilitate understanding
Author : Niccolò Rinaldi
Publisher : CRC Press
ISBN 13 : 1000794407
Total Pages : 377 pages
Book Rating : 4.0/5 (7 download)
Download or read book Silicon-Germanium Heterojunction Bipolar Transistors for Mm-wave Systems Technology, Modeling and Circuit Applications written by Niccolò Rinaldi and published by CRC Press. This book was released on 2022-09-01 with total page 377 pages. Available in PDF, EPUB and Kindle. Book excerpt: The semiconductor industry is a fundamental building block of the new economy, there is no area of modern life untouched by the progress of nanoelectronics. The electronic chip is becomingan ever-increasing portion of system solutions, starting initially from less than 5% in the 1970 microcomputer era, to more than 60% of the final cost of a mobile telephone, 50% of the price of a personal computer (representing nearly 100% of the functionalities) and 30% of the price of a monitor in the early 2000’s.Interest in utilizing the (sub-)mm-wave frequency spectrum for commercial and research applications has also been steadily increasing. Such applications, which constitute a diverse but sizeable future market, span a large variety of areas such as health, material science, mass transit, industrial automation, communications, and space exploration.Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems Technology, Modeling and Circuit Applications provides an overview of results of the DOTSEVEN EU research project, and as such focusses on key material developments for mm-Wave Device Technology. It starts with the motivation at the beginning of the project and a summary of its major achievements. The subsequent chapters provide a detailed description of the obtained research results in the various areas of process development, device simulation, compact device modeling, experimental characterization, reliability, (sub-)mm-wave circuit design and systems.
