Ballistic Electron Transport Through Organic Semiconductors

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Publisher :
ISBN 13 : 9783838100326
Total Pages : 132 pages
Book Rating : 4.1/5 (3 download)

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Book Synopsis Ballistic Electron Transport Through Organic Semiconductors by : Soner Özcan

Download or read book Ballistic Electron Transport Through Organic Semiconductors written by Soner Özcan and published by . This book was released on 2008-10-01 with total page 132 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the framework of this thesis Ballistic Electron Emission Microscopy/ Spectroscopy (BEEM/S) was used to investigate semiconductor heterostructures. Including organic semiconductors like titanylphthalocyanine (TiOPc) and hexa-peri hexabenzocoronene (HBe. Analyzing the BEEM spectra we find that the TiOPc increases the BEEM threshold voltage compared to reference Au/GaAs diodes. The energy dependent electron transmission properties of TiOPc were investigated too. Additionally, an approach for the determination of the attenuation length of TiOPc as a function of energy has been successfully introduced. Finally, the Schottky barrier heights of Au/HBC/GaAs heterostructures were investigated by BEEM. The high barrier at the HBiGaAs interface makes this material a promising interfacial layer for increasing the open circuit voltage of GaAs Schottky barrier solar cells.

Transport of Information-Carriers in Semiconductors and Nanodevices

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Publisher : IGI Global
ISBN 13 : 1522523138
Total Pages : 690 pages
Book Rating : 4.5/5 (225 download)

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Book Synopsis Transport of Information-Carriers in Semiconductors and Nanodevices by : El-Saba, Muhammad

Download or read book Transport of Information-Carriers in Semiconductors and Nanodevices written by El-Saba, Muhammad and published by IGI Global. This book was released on 2017-03-31 with total page 690 pages. Available in PDF, EPUB and Kindle. Book excerpt: Rapid developments in technology have led to enhanced electronic systems and applications. When utilized correctly, these can have significant impacts on communication and computer systems. Transport of Information-Carriers in Semiconductors and Nanodevices is an innovative source of academic material on transport modelling in semiconductor material and nanoscale devices. Including a range of perspectives on relevant topics such as charge carriers, semiclassical transport theory, and organic semiconductors, this is an ideal publication for engineers, researchers, academics, professionals, and practitioners interested in emerging developments on transport equations that govern information carriers.

Electron Transport Phenomena in Semiconductors

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Publisher : World Scientific
ISBN 13 : 9789810212834
Total Pages : 416 pages
Book Rating : 4.2/5 (128 download)

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Book Synopsis Electron Transport Phenomena in Semiconductors by : B. M. Askerov

Download or read book Electron Transport Phenomena in Semiconductors written by B. M. Askerov and published by World Scientific. This book was released on 1994 with total page 416 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the first systematic and detailed exposition of the linear theory of the stationary electron transport phenomena in semiconductors. Arbitrary isotropic and anisotropic nonparabolic bands as well as p-Ge-type bands are considered. Phonon drag effect are taken account of in an arbitrary nonquantizing magnetic field. Scattering theory is discussed in detail with account taken of the Bloch wave functions effect. Transport phenomena in the quantizing magnetic field are studied as well as the size effects in thin films. Band structures of the semiconductors and semiconductor compounds of interest are also considered.The main part of the book deals with the three important problems: charge carrier statistics in a semiconductor, classical and quantum theory of the electron transport phenomena. All the theoretical results considered as well as the validity conditions are presented in the form which may be directly used to interpret experimental data.

Ballistic Electron Transport in Nanoscale Three-branch Junctions

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Publisher :
ISBN 13 :
Total Pages : 202 pages
Book Rating : 4.:/5 (77 download)

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Book Synopsis Ballistic Electron Transport in Nanoscale Three-branch Junctions by : Hiroshi Irie

Download or read book Ballistic Electron Transport in Nanoscale Three-branch Junctions written by Hiroshi Irie and published by . This book was released on 2010 with total page 202 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Presented here is an experimental study on a novel electron device utilizing ballistic electron transport. This device is a three-terminal structure comprised of lithographically defined Y-shaped two-dimensional electron gas (2DEG) in a compound semiconductor heterostructure. Ballistic electron transport causes a nonlinear input-output transfer curve, which can be exploited for signal rectification, frequency multiplication, and logic gate function. Device fabrication technique using electron beam lithography and a carbon-hard-mask was developed, in order to reliably fabricate ~100-nm-wide 2DEG wires. Direct current measurements while changing the device length and operating temperature revealed the role of ballistic transport in the nonlinear behavior and elucidated that the intervalley transfer mechanism took over the nonlinear behavior under the high electric field. Electrical response at terahertz frequencies was studied by ultrafast time-domain analysis based on an electro-optic sampling and sub-picosecond pulse generation using a photoconductive switch. The terahertz measurement validated the superior high-speed performance of this device as a consequence of small internal capacitance. This research opens up a way to realize various ballistic devices with room-temperature operation and terahertz-bandwidth performance."--Leaf v.

Electron Correlation in New Materials and Nanosystems

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Publisher : Springer Science & Business Media
ISBN 13 : 1402056591
Total Pages : 429 pages
Book Rating : 4.4/5 (2 download)

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Book Synopsis Electron Correlation in New Materials and Nanosystems by : Kurt Scharnberg

Download or read book Electron Correlation in New Materials and Nanosystems written by Kurt Scharnberg and published by Springer Science & Business Media. This book was released on 2007-05-24 with total page 429 pages. Available in PDF, EPUB and Kindle. Book excerpt: The articles collected in this book cover a wide range of materials with extraordinary superconducting and magnetic properties. For many of the materials studied, strong electronic correlations provide a link between these two phenomena which were long thought to be highly antagonistic. The book reports both the progress in our understanding of fundamental physical processes and the advances made towards the development of devices.

Hot Electron Transport Through Molecular Diodes

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Publisher :
ISBN 13 :
Total Pages : 258 pages
Book Rating : 4.:/5 (112 download)

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Book Synopsis Hot Electron Transport Through Molecular Diodes by : Wenjie Li

Download or read book Hot Electron Transport Through Molecular Diodes written by Wenjie Li and published by . This book was released on 2009 with total page 258 pages. Available in PDF, EPUB and Kindle. Book excerpt: Single-molecule devices potentially offer a promising future for next-generation electronics. Understanding the mechanism of electron transport through single molecules is fundamental for developing such molecular electronics. In this thesis, we apply the method ballistic electron emission microscopy (BEEM) to study hot electron transport through a two-dimensional, self-assembled molecular layer. The molecular layer is sandwiched by a thin layer of metal and a semiconductor substrate, either silicon or gallium arsenide. Various linear organic molecules with different end functional groups were studied attached in a monolayer to the substrate via Si-C or (GaAs)-S bonds. We conclude that the presence of the organic can dramatically change the electrical properties of the metal/molecule/semiconductor diode and that the end-functional group plays a key role in controlling the barrier height and electron transmission. Those molecules bonded to the top metal contacts via metal-S bonds resulted in an insulating layer at the junction, while those bonded via weak van de Waals bonds resulted in an intermixed layer with the Au. We conclude that this molecular interface design offers a promising method for control of device function.

Introduction to Organic Electronic and Optoelectronic Materials and Devices

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Publisher : CRC Press
ISBN 13 : 1466585129
Total Pages : 1394 pages
Book Rating : 4.4/5 (665 download)

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Book Synopsis Introduction to Organic Electronic and Optoelectronic Materials and Devices by : Sam-Shajing Sun

Download or read book Introduction to Organic Electronic and Optoelectronic Materials and Devices written by Sam-Shajing Sun and published by CRC Press. This book was released on 2016-10-03 with total page 1394 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers the combined subjects of organic electronic and optoelectronic materials/devices. It is designed for classroom instruction at the senior college level. Highlighting emerging organic and polymeric optoelectronic materials and devices, it presents the fundamentals, principle mechanisms, representative examples, and key data.

Handbook of Spin Transport and Magnetism

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Publisher : CRC Press
ISBN 13 : 1439803781
Total Pages : 797 pages
Book Rating : 4.4/5 (398 download)

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Book Synopsis Handbook of Spin Transport and Magnetism by : Evgeny Y. Tsymbal

Download or read book Handbook of Spin Transport and Magnetism written by Evgeny Y. Tsymbal and published by CRC Press. This book was released on 2016-04-19 with total page 797 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the past several decades, the research on spin transport and magnetism has led to remarkable scientific and technological breakthroughs, including Albert Fert and Peter Grunberg's Nobel Prize-winning discovery of giant magnetoresistance (GMR) in magnetic metallic multilayers. Handbook of Spin Transport and Magnetism provides a comprehensive, bal

Advanced Physics of Electron Transport in Semiconductors and Nanostructures

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Publisher : Springer
ISBN 13 : 3319011014
Total Pages : 481 pages
Book Rating : 4.3/5 (19 download)

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Book Synopsis Advanced Physics of Electron Transport in Semiconductors and Nanostructures by : Massimo V. Fischetti

Download or read book Advanced Physics of Electron Transport in Semiconductors and Nanostructures written by Massimo V. Fischetti and published by Springer. This book was released on 2016-05-20 with total page 481 pages. Available in PDF, EPUB and Kindle. Book excerpt: This textbook is aimed at second-year graduate students in Physics, Electrical Engineering, or Materials Science. It presents a rigorous introduction to electronic transport in solids, especially at the nanometer scale.Understanding electronic transport in solids requires some basic knowledge of Hamiltonian Classical Mechanics, Quantum Mechanics, Condensed Matter Theory, and Statistical Mechanics. Hence, this book discusses those sub-topics which are required to deal with electronic transport in a single, self-contained course. This will be useful for students who intend to work in academia or the nano/ micro-electronics industry.Further topics covered include: the theory of energy bands in crystals, of second quantization and elementary excitations in solids, of the dielectric properties of semiconductors with an emphasis on dielectric screening and coupled interfacial modes, of electron scattering with phonons, plasmons, electrons and photons, of the derivation of transport equations in semiconductors and semiconductor nanostructures somewhat at the quantum level, but mainly at the semi-classical level. The text presents examples relevant to current research, thus not only about Si, but also about III-V compound semiconductors, nanowires, graphene and graphene nanoribbons. In particular, the text gives major emphasis to plane-wave methods applied to the electronic structure of solids, both DFT and empirical pseudopotentials, always paying attention to their effects on electronic transport and its numerical treatment. The core of the text is electronic transport, with ample discussions of the transport equations derived both in the quantum picture (the Liouville-von Neumann equation) and semi-classically (the Boltzmann transport equation, BTE). An advanced chapter, Chapter 18, is strictly related to the ‘tricky’ transition from the time-reversible Liouville-von Neumann equation to the time-irreversible Green’s functions, to the density-matrix formalism and, classically, to the Boltzmann transport equation. Finally, several methods for solving the BTE are also reviewed, including the method of moments, iterative methods, direct matrix inversion, Cellular Automata and Monte Carlo. Four appendices complete the text.

Electronic Processes in Organic Electronics

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Publisher : Springer
ISBN 13 : 4431552065
Total Pages : 427 pages
Book Rating : 4.4/5 (315 download)

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Book Synopsis Electronic Processes in Organic Electronics by : Hisao Ishii

Download or read book Electronic Processes in Organic Electronics written by Hisao Ishii and published by Springer. This book was released on 2015-01-07 with total page 427 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book covers a variety of studies of organic semiconductors, from fundamental electronic states to device applications, including theoretical studies. Furthermore, innovative experimental techniques, e.g., ultrahigh sensitivity photoelectron spectroscopy, photoelectron yield spectroscopy, spin-resolved scanning tunneling microscopy (STM), and a material processing method with optical-vortex and polarization-vortex lasers, are introduced. As this book is intended to serve as a textbook for a graduate level course or as reference material for researchers in organic electronics and nanoscience from electronic states, fundamental science that is necessary to understand the research is described. It does not duplicate the books already written on organic electronics, but focuses mainly on electronic properties that arise from the nature of organic semiconductors (molecular solids). The new experimental methods introduced in this book are applicable to various materials (e.g., metals, inorganic and organic materials). Thus the book is also useful for experts working in physics, chemistry, and related engineering and industrial fields.

Impact of Chemical Doping on the Thermoelectric Charge Transport of Organic Semiconductors

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Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (18 download)

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Book Synopsis Impact of Chemical Doping on the Thermoelectric Charge Transport of Organic Semiconductors by : Connor J. Boyle

Download or read book Impact of Chemical Doping on the Thermoelectric Charge Transport of Organic Semiconductors written by Connor J. Boyle and published by . This book was released on 2018 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The thermoelectric properties of organic semiconductors allow them to directly convert heat into electricity without the use of moving parts and to directly convert electricity into heat without the use of working fluids. These properties offer opportunities for the generation of electricity from non-conventional or renewable sources of heat and for refrigeration without the risk of leaking harmful working fluids at any length scale down to the nanoscale. Since organic materials are lightweight, flexible, and made from abundant resources, these opportunities could one day become affordable for widespread use and could be expanded to include specialized and otherwise difficult to reach applications, such as wearable refrigeration and electricity generation from anthropogenic heat. Since these properties are a result of how charge carriers in organic materials transfer energy upon conduction, measuring these properties also allows us to better understand the factors that influence how charge carriers carry energy during charge transport. One of the remaining challenges in developing organic thermoelectric materials for practical use is the preparation of n-type thermoelectric materials, which transport electrons as their charge carrier, since most n-type organic semiconductors are unstable in air due to electron transfer to oxygen gas. We synthesized three organic conjugated polymers based on electron deficient rylene diimides and a vinylene spacer - PDNDIV, PFNDIV, and PDIV - to study how these could be doped into n-type semiconductors and how long these persist in air. Each polymer was capable of electron transport, and PFNDIV was capable of remaining n-doped with electronic charges for at least one week in air. Blending conducting fillers into organic thermoelectric materials can alter their thermoelectric properties by altering the mechanism of charge transport. We blended the conductive filler SWNT into the organic conjugated polymer PBTDV2 and measured the thermoelectric properties. Although PBTDV2 was originally developed for use as an electron transporting polymer, all blends of SWNT with PBTDV2 had p-type, hole transporting, thermoelectric properties similar to those of oxygen-doped SWNT. We measured the thermoelectric properties of two p-type organic polymers - P3HT and PDPP4T - that were doped to achieve a high concentration of charge carriers as they spontaneously de-doped and decreased their charge carrier concentration. Modeling these thermoelectric properties revealed that the spatial distribution of dopants in the polymers impacted the how much energy was carried per charge carrier due to Coulombic interactions of the dopants with the charge carriers, and that more heterogeneous spatial distributions of dopants can limit the thermoelectric performance by limiting how much energy is carried per charge carrier. These findings aid in the future development of organic thermoelectric materials by highlighting the importance of doping organic thermoelectric materials in ways that achieve homogeneous spatial distributions of dopants.

Physics of Hot Electron Transport in Semiconductors

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Publisher : World Scientific
ISBN 13 : 9789810210083
Total Pages : 336 pages
Book Rating : 4.2/5 (1 download)

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Book Synopsis Physics of Hot Electron Transport in Semiconductors by : Chin Sen Ting

Download or read book Physics of Hot Electron Transport in Semiconductors written by Chin Sen Ting and published by World Scientific. This book was released on 1992 with total page 336 pages. Available in PDF, EPUB and Kindle. Book excerpt: This review volume is based primarily on the balance equation approach developed since 1984. It provides a simple and analytical description about hot electron transport, particularly, in semiconductors with higher carrier density where the carrier-carrier collision is much stronger than the single particle scattering. The steady state and time-dependent hot electron transport, thermal noise, hot phonon effect, the memory effect, and other related subjects of charge carriers under strong electric fields are reviewed. The application of Zubarev's nonequilibrium statistical operator to hot electron transport and its equivalence to the balance equation method are also presented. For semiconductors with very low carrier density, the problem can be regarded as a single carrier transport which will be treated non-perturbatively by the nonequilibrium Green's function technique and the path integral theory. The last part of this book consists of a chapter on the dynamic conductivity and the shot noise suppression of a double-carrier resonant tunneling system.

Charge Injection and Transport in Organic Semiconductors

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Publisher :
ISBN 13 :
Total Pages : 262 pages
Book Rating : 4.E/5 ( download)

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Book Synopsis Charge Injection and Transport in Organic Semiconductors by : Yulong Shen

Download or read book Charge Injection and Transport in Organic Semiconductors written by Yulong Shen and published by . This book was released on 2004 with total page 262 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Ballistic Electrons

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Publisher :
ISBN 13 :
Total Pages : 294 pages
Book Rating : 4.:/5 (531 download)

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Book Synopsis Ballistic Electrons by : Ian Appelbaum

Download or read book Ballistic Electrons written by Ian Appelbaum and published by . This book was released on 2003 with total page 294 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis describes research to theoretically model and experimentally measure electronic systems which employ ballistic electron emission. First, a Monte-Carlo framework for simulating electron injection from a tunnel junction emitter into a semiconductor collector is presented in detail and a few applications of this theory are described. Second, a method of treating ballistic electron transport through nano-scale heterostructures by considering realistic, atomic-scale periodic potentials is examined. Third, experimental results toward development of a novel scanning-probe microscopy for the local study of buried luminescent heterostructure layers is presented. Finally, a number of future research directions suggested by these results are described.

24th International Conference on the Physics of Semiconductors

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Publisher : World Scientific
ISBN 13 : 9789810236137
Total Pages : 334 pages
Book Rating : 4.2/5 (361 download)

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Book Synopsis 24th International Conference on the Physics of Semiconductors by : David Gershoni

Download or read book 24th International Conference on the Physics of Semiconductors written by David Gershoni and published by World Scientific. This book was released on 1999 with total page 334 pages. Available in PDF, EPUB and Kindle. Book excerpt: The proceedings of this important conference consist of plenary and invited papers published in hard copy and CD-ROM versions. The contributed oral and poster presentations are included in the CD-ROM version only.

Single-Molecule Electronics

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Publisher : Springer
ISBN 13 : 9811007241
Total Pages : 239 pages
Book Rating : 4.8/5 (11 download)

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Book Synopsis Single-Molecule Electronics by : Manabu Kiguchi

Download or read book Single-Molecule Electronics written by Manabu Kiguchi and published by Springer. This book was released on 2016-05-23 with total page 239 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents a multidisciplinary approach to single-molecule electronics. It includes a complete overview of the field, from the synthesis and design of molecular candidates to the prevalent experimental techniques, complemented by a detailed theoretical description. This all-inclusive strategy provides the reader with the much-needed perspective to fully understand the far-reaching ramifications of single-molecule electronics. In addition, a number of state-of-the-art topics are discussed, including single-molecule spectro-electrical methods, electrochemical DNA sequencing technology, and single-molecule chemical reactions. As a result of this integrative effort, this publication may be used as an introductory textbook to both graduate and advanced undergraduate students, as well as researchers with interests in single-molecule electronics, organic electronics, surface science, and nanoscience.

The Physics of Submicron Structures

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Publisher : Springer Science & Business Media
ISBN 13 : 1461327776
Total Pages : 349 pages
Book Rating : 4.4/5 (613 download)

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Book Synopsis The Physics of Submicron Structures by : Harold L. Grubin

Download or read book The Physics of Submicron Structures written by Harold L. Grubin and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 349 pages. Available in PDF, EPUB and Kindle. Book excerpt: Research on electronic transport in ultra small dimensions has been highly stimulated by the sensational developments in silicon technology and very large scale integration. The papers in this volume, however, have been influenced to no lesser extent by the advent of molecular beam epitaxy and metal/organic chemical vapor deposition which has made possible the control of semiconductor boundaries on a quantum level. This new control of boundary condi tions in ultra small electronic research is the mathematical reason for a whole set of innovative ideas. For the first time in the history of semiconductors, it is possible to design device functions from physical considerations involving ~ngstom scale dimensions. At the time the meeting was held, July 1982, it was one of the first strong signals of the powerful developments in this area. During the meeting, important questions have been answered concerning ballistic transport, Monte Carlo simulations of high field transport and other developments pertinent to new device concepts and the understanding of small devices from physics to function. The committee members want to express their deep appreciation to the speakers who have made the meeting a success. The USER pro ject of DOD has been a vital stimulous and thanks go to the Army Research Office and the Office of Naval Research for financial sup port. Urbana, January 1984 K. Hess, Conference Chairman J. R. Brews L. R. Cooper, Ex Officio D. K. Ferry H. L. Grubin G. J. Iafrate M. I. Nathan A. F.