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B Incorporation Kinetics And Charge Transport Property Of Silicon Germanide001 Layer Grown By Gs Mbe From Silicon Hydride Germanium Hydride And Boron Hydride
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Book Synopsis B-incorporation Kinetics and Charge Transport Property of Silicon Germanide(001) Layer Grown by GS-MBE from Silicon Hydride, Germanium Hydride, and Boron Hydride by : Qing Lu
Download or read book B-incorporation Kinetics and Charge Transport Property of Silicon Germanide(001) Layer Grown by GS-MBE from Silicon Hydride, Germanium Hydride, and Boron Hydride written by Qing Lu and published by . This book was released on 1996 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The growth rates of Si(001) and Ge(001) by gas-source molecular-beam epitaxy (GS-MBE) from $\rm Si\sb2H\sb6$ and $\rm Ge\sb2H\sb6$ as a function of T$\sb{\rm s}$ are well described by a model based upon dissociative $\rm Si\sb2H\sb6$ and $\rm Ge\sb2H\sb6$ chemisorption followed by a series of surface decomposition reactions with the rate-limiting step being first-order hydrogen desorption from Si and Ge monohydride for which the activation energy is 2.04 and 1.56 eV, respectively. The zero-coverage reactive sticking probability of $\rm Si\sb2H\sb6$ on Si(001)2 x 1 ($\rm Ge\sb2H\sb6$ on Ge(001)2 x 1) in the impingement-flux-limited growth regime was found to be $\rm S\sbsp{Si\sb2H\sb6}{Si} = 0.036\ (S\sbsp{Ge\sb2H\sb6}{Ge} = 0.052).$ The growth rate of $\rm Si\sb{1-x}Ge\sb{x}$ alloys R$\sb{\rm SiGe}$ decreases somewhat with increasing $\rm G\sb2H\sb6$ in the flux-limited growth mode while dramatically increasing $\rm R\sb{SiGe}$ in the surface-reaction-limited regime.
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2002 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis H-Mediated Film Growth and Dopant Incorporation Kinetics During Silicon Germanium(001):boron Gas-Source Molecular Beam Epitaxy by :
Download or read book H-Mediated Film Growth and Dopant Incorporation Kinetics During Silicon Germanium(001):boron Gas-Source Molecular Beam Epitaxy written by and published by . This book was released on 1998 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Ultra-High B Doping During Si(1-X)ge(x)(001) Gas-Source Molecular-Beam Epitaxy: A Mechanistic Study of Layer Growth Kinetics, Dopant Incorporation, Electrical Activation, and Carrier Transport by :
Download or read book Ultra-High B Doping During Si(1-X)ge(x)(001) Gas-Source Molecular-Beam Epitaxy: A Mechanistic Study of Layer Growth Kinetics, Dopant Incorporation, Electrical Activation, and Carrier Transport written by and published by . This book was released on 1999 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Germanium-silicon Strained Layers and Heterostructures by : Suresh C. Jain
Download or read book Germanium-silicon Strained Layers and Heterostructures written by Suresh C. Jain and published by . This book was released on 1994 with total page 330 pages. Available in PDF, EPUB and Kindle. Book excerpt: Biaxial strain in coherent GeSi layers grown on Si substrates provides a powerful tool for tailoring bandgaps and band offsets. Extremely high electron and hole mobilities have been obtained in modulation-doped GeSi strained layer heterostructures. Ultra-high-speed Heterojunction Bipolar Transistors and MODFETs, and long wavelength (1 to 20 micrometre) IR Detectors have been fabricated using these layers. Quantum wells, ultra-thin period superlattices, and quantum dots can also be fabricated using the strained layers. These devices were previously implemented using III-V semiconductors. Now they can be fabricated using existing Si technology, which is mature and reliable. GeSi strained layer technology has made it possible to manufacture monolithic Si integrated circuits containing heterojunction devices.
Book Synopsis Surface reactions, hydride kinetics and in situ boron doping of silicon and germanium by : Bin Gong
Download or read book Surface reactions, hydride kinetics and in situ boron doping of silicon and germanium written by Bin Gong and published by . This book was released on 1999 with total page 354 pages. Available in PDF, EPUB and Kindle. Book excerpt:
