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Au Ge Ni Ohmic Contacts To N Gaas
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Book Synopsis Processing of 'Wide Band Gap Semiconductors by : S. J. Pearton
Download or read book Processing of 'Wide Band Gap Semiconductors written by S. J. Pearton and published by Cambridge University Press. This book was released on 2013-01-15 with total page 593 pages. Available in PDF, EPUB and Kindle. Book excerpt: Wide bandgap semiconductors, made from such materials as GaN, SiC, diamond, and ZnSe, are undergoing a strong resurgence in recent years, principally because of their direct bandgaps, which give them a huge advantage over the indirect gap Sic As an example, more than 10 million blue LEDs using this technology are sold each month, and new, high brightness (15 lumens per watt), long-life white LEDs are under development with the potential to replace incandescent bulbs in many situations. This book provides readers with a broad overview of this rapidly expanding technology, bringing them up to speed on new discoveries and commercial applications. It provides specific technical applications of key processes such as laser diodes, LEDs, and very high temperature electronic controls on engines, focusing on doping, etching, oxidation passivation, growth techniques and more.
Book Synopsis Ohmic Contacts to N-type Aluminum Gallium Arsenide (Al[subscript X]Gá́[subscript X]As, O[lesser Than Or Equal To]x[lesser Than Or Equal To]0.3) Utilizing Limited Solid-phase Reactions by : Eric David Marshall
Download or read book Ohmic Contacts to N-type Aluminum Gallium Arsenide (Al[subscript X]Gá́[subscript X]As, O[lesser Than Or Equal To]x[lesser Than Or Equal To]0.3) Utilizing Limited Solid-phase Reactions written by Eric David Marshall and published by . This book was released on 1989 with total page 590 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis GaAs High-Speed Devices by : C. Y. Chang
Download or read book GaAs High-Speed Devices written by C. Y. Chang and published by John Wiley & Sons. This book was released on 1994-10-28 with total page 632 pages. Available in PDF, EPUB and Kindle. Book excerpt: The performance of high-speed semiconductor devices—the genius driving digital computers, advanced electronic systems for digital signal processing, telecommunication systems, and optoelectronics—is inextricably linked to the unique physical and electrical properties of gallium arsenide. Once viewed as a novel alternative to silicon, gallium arsenide has swiftly moved into the forefront of the leading high-tech industries as an irreplaceable material in component fabrication. GaAs High-Speed Devices provides a comprehensive, state-of-the-science look at the phenomenally expansive range of engineering devices gallium arsenide has made possible—as well as the fabrication methods, operating principles, device models, novel device designs, and the material properties and physics of GaAs that are so keenly integral to their success. In a clear five-part format, the book systematically examines each of these aspects of GaAs device technology, forming the first authoritative study to consider so many important aspects at once and in such detail. Beginning with chapter 2 of part one, the book discusses such basic subjects as gallium arsenide materials and crystal properties, electron energy band structures, hole and electron transport, crystal growth of GaAs from the melt and defect density analysis. Part two describes the fabrication process of gallium arsenide devices and integrated circuits, shedding light, in chapter 3, on epitaxial growth processes, molecular beam epitaxy, and metal organic chemical vapor deposition techniques. Chapter 4 provides an introduction to wafer cleaning techniques and environment control, wet etching methods and chemicals, and dry etching systems, including reactive ion etching, focused ion beam, and laser assisted methods. Chapter 5 provides a clear overview of photolithography and nonoptical lithography techniques that include electron beam, x-ray, and ion beam lithography systems. The advances in fabrication techniques described in previous chapters necessitate an examination of low-dimension device physics, which is carried on in detail in chapter 6 of part three. Part four includes a discussion of innovative device design and operating principles which deepens and elaborates the ideas introduced in chapter 1. Key areas such as metal-semiconductor contact systems, Schottky Barrier and ohmic contact formation and reliability studies are examined in chapter 7. A detailed discussion of metal semiconductor field-effect transistors, the fabrication technology, and models and parameter extraction for device analyses occurs in chapter 8. The fifth part of the book progresses to an up-to-date discussion of heterostructure field-effect (HEMT in chapter 9), potential-effect (HBT in chapter 10), and quantum-effect devices (chapters 11 and 12), all of which are certain to have a major impact on high-speed integrated circuits and optoelectronic integrated circuit (OEIC) applications. Every facet of GaAs device technology is placed firmly in a historical context, allowing readers to see instantly the significant developmental changes that have shaped it. Featuring a look at devices still under development and device structures not yet found in the literature, GaAs High-Speed Devices also provides a valuable glimpse into the newest innovations at the center of the latest GaAs technology. An essential text for electrical engineers, materials scientists, physicists, and students, GaAs High-Speed Devices offers the first comprehensive and up-to-date look at these formidable 21st century tools. The unique physical and electrical properties of gallium arsenide has revolutionized the hardware essential to digital computers, advanced electronic systems for digital signal processing, telecommunication systems, and optoelectronics. GaAs High-Speed Devices provides the first fully comprehensive look at the enormous range of engineering devices gallium arsenide has made possible as well as the backbone of the technology—ication methods, operating principles, and the materials properties and physics of GaAs—device models and novel device designs. Featuring a clear, six-part format, the book covers: GaAs materials and crystal properties Fabrication processes of GaAs devices and integrated circuits Electron beam, x-ray, and ion beam lithography systems Metal-semiconductor contact systems Heterostructure field-effect, potential-effect, and quantum-effect devices GaAs Microwave Monolithic Integrated Circuits and Digital Integrated Circuits In addition, this comprehensive volume places every facet of the technology in an historical context and gives readers an unusual glimpse at devices still under development and device structures not yet found in the literature.
Download or read book Semiconductors and Semimetals written by and published by Academic Press. This book was released on 1988-12-24 with total page 405 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors and Semimetals
Book Synopsis CRC Handbook of Metal Etchants by : Perrin Walker
Download or read book CRC Handbook of Metal Etchants written by Perrin Walker and published by CRC Press. This book was released on 1990-12-11 with total page 1434 pages. Available in PDF, EPUB and Kindle. Book excerpt: This publication presents cleaning and etching solutions, their applications, and results on inorganic materials. It is a comprehensive collection of etching and cleaning solutions in a single source. Chemical formulas are presented in one of three standard formats - general, electrolytic or ionized gas formats - to insure inclusion of all necessary operational data as shown in references that accompany each numbered formula. The book describes other applications of specific solutions, including their use on other metals or metallic compounds. Physical properties, association of natural and man-made minerals, and materials are shown in relationship to crystal structure, special processing techniques and solid state devices and assemblies fabricated. This publication also presents a number of organic materials which are widely used in handling and general processing...waxes, plastics, and lacquers for example. It is useful to individuals involved in study, development, and processing of metals and metallic compounds. It is invaluable for readers from the college level to industrial R & D and full-scale device fabrication, testing and sales. Scientific disciplines, work areas and individuals with great interest include: chemistry, physics, metallurgy, geology, solid state, ceramic and glass, research libraries, individuals dealing with chemical processing of inorganic materials, societies and schools.
Book Synopsis Physics and Chemistry of III-V Compound Semiconductor Interfaces by : Carl Wilmsen
Download or read book Physics and Chemistry of III-V Compound Semiconductor Interfaces written by Carl Wilmsen and published by Springer Science & Business Media. This book was released on 2013-06-29 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: The application of the 111-V compound semiconductors to device fabrica tion has grown considerably in the last few years. This process has been stimulated, in part, by the advancement in the understanding of the interface physics and chemistry of the III-V's. The literature on this subject is spread over the last 15 years and appears in many journals and conference proceedings. Understanding this literature requires consider able effort by the seasoned researcher, and even more for those starting out in the field or by engineers and scientists who wish to apply this knowledge to the fabrication of devices. The purpose of this book is to bring together much of the fundamental and practical knowledge on the physics and chemistry of the 111-V compounds with metals and dielectrics. The authors of this book have endeavored to provide concise overviews of these areas with many tahles ancI grarhs whic. h c. omr>are and summarize the literature. In this way, the book serves as both an insightful treatise on III-V interfaces and a handy reference to the literature. The selection of authors was mandated by the desire to include both fundamental and practical approaches, covering device and material aspects of the interfaces. All of the authors are recognized experts on III-V interfaces and each has worked for many years in his subject area. This experience is projected in the breadth of understanding in each chapter.
Book Synopsis Compound Semiconductor Electronics by : Michael Shur
Download or read book Compound Semiconductor Electronics written by Michael Shur and published by World Scientific. This book was released on 1996 with total page 388 pages. Available in PDF, EPUB and Kindle. Book excerpt: In many respects, compound semiconductor technology has reached the age of maturity when applications will have been defined, yields are high enough and well established, and gallium arsenide and related compounds have carved many important niches in electronics. This book reviews the state-of-the-art of compound semiconductor electronics. It covers the microwave, millimeter wave, and submillimeter wave devices, monolithic microwave and digital integrated circuits made from compound semiconductors and emerging wide band semiconductor materials. The book is written by leading experts in compound semiconductor electronics from industry and academia and strikes the balance between practical applications, record-breaking results, and design and modeling tools specific for compound semiconductor technology. Engineers, scientists, and graduate students working in solid state electronics and especially in the area of compound semiconductor electronics will find this book very useful. It could also be used as a text or a supplementary text for graduate courses in this field.
Book Synopsis Defects in Optoelectronic Materials by : Kazumi Wada
Download or read book Defects in Optoelectronic Materials written by Kazumi Wada and published by CRC Press. This book was released on 2001-11-06 with total page 430 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defects in Optoelectronic Materials bridges the gap between device process engineers and defect physicists by describing current problems in device processing and current understanding of these defects based on defect physics. The volume covers defects and their behaviors in epitaxial growth, in various processes such as plasma processing, deposition and implantation, and in device degradation. This book also provides graduate students cutting-edge information on devices and materials interaction.
Book Synopsis VLSI Metallization by : Norman G. Einspruch
Download or read book VLSI Metallization written by Norman G. Einspruch and published by Academic Press. This book was released on 2014-12-01 with total page 491 pages. Available in PDF, EPUB and Kindle. Book excerpt: VLSI Electronics Microstructure Science, Volume 15: VLSI Metallization discusses the various issues and problems related to VLSI metallization. It details the available solutions and presents emerging trends. This volume is comprised of 10 chapters. The two introductory chapters, Chapter 1 and 2 serve as general references for the electrical and metallurgical properties of thin conducting films. Subsequent chapters review the various aspects of VLSI metallization. The order of presentation has been chosen to follow the common processing sequence. In Chapter 3, some relevant metal deposition techniques are discussed. Chapter 4 presents the methods of VLSI lithography and etching. Conducting films are first deposited at the gate definition step; therefore, the issues related to gate metallization are discussed next in Chapter 5.In Chapter 6, contact metallization is elaborated, and Chapter 7 is devoted to multilevel metallization schemes. Long-time reliability is the subject of Chapter 8, which discusses the issues of contact and interconnect electromigration. GaAs metallization is tackled in Chapter 9. The volume concludes with a general discussion of the functions of interconnect systems in VLSI. Materials scientists, processing and design engineers, and device physicists will find the book very useful.
Book Synopsis Survey of Semiconductor Physics by : Karl W. Böer
Download or read book Survey of Semiconductor Physics written by Karl W. Böer and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 1477 pages. Available in PDF, EPUB and Kindle. Book excerpt: Any book that covers a large variety of subjects and is written by one author lacks by necessity the depth provided by an expert in his or her own field of specialization. This book is no exception. It has been written with the encouragement of my students and colleagues, who felt that an extensive card file I had accumulated over the years of teaching solid state and semiconductor physics would be helpful to more than just a few of us. This file, updated from time to time, contained lecture notes and other entries that were useful in my research and permitted me to give to my students a broader spectrum of information than is available in typical textbooks. When assembling this material into a book, I divided the top ics into material dealing with the homogeneous semiconductor, the subject of the previously published Volume 1, and the inhomoge neous semiconductor, the subject of this Volume 2. In order to keep the book to a manageable size, sections of tutorial character which can be used as text for a graduate level class had to be interwoven with others written in shorter, reference style. The pointers at the right-hand page header will assist in distinguishing the more diffi cult reference parts of the book (with the pointer to the right) from the more easy-to-read basic educational sections (with the pointer tending to the left).
Book Synopsis Gallium Arsenide and Related Compounds 1991, Proceedings of the Eighteenth INT Symposium, 9-12 September 1991, Seattle, USA by : Gerald B. Stringfellow
Download or read book Gallium Arsenide and Related Compounds 1991, Proceedings of the Eighteenth INT Symposium, 9-12 September 1991, Seattle, USA written by Gerald B. Stringfellow and published by CRC Press. This book was released on 2020-11-26 with total page 696 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium Arsenide and Related Compounds 1991emphasizes current results on the materials, characterization, and device aspects of a broad range of semiconductor materials, particularly the III-V compounds and alloys. The book is a valuable reference for researchers in physics, materials science, and electronics and electrical engineering who work on III-V compounds.
Book Synopsis Reliability of Compound Analogue Semiconductor Integrated Circuits by : Aris Christou
Download or read book Reliability of Compound Analogue Semiconductor Integrated Circuits written by Aris Christou and published by RIAC. This book was released on 2006 with total page 487 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Proceedings of the Twenty-First State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXI) by : S. N. G. Chu
Download or read book Proceedings of the Twenty-First State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXI) written by S. N. G. Chu and published by The Electrochemical Society. This book was released on 1995 with total page 324 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Official Gazette of the United States Patent and Trademark Office by : United States. Patent and Trademark Office
Download or read book Official Gazette of the United States Patent and Trademark Office written by United States. Patent and Trademark Office and published by . This book was released on 2000 with total page 1514 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Compound Semiconductors 1994, Proceedings of the Twenty-First INT Symposium on Compound Semiconductors held in San Diego, California, 18-22 September 1994 by : Herb Goronkin
Download or read book Compound Semiconductors 1994, Proceedings of the Twenty-First INT Symposium on Compound Semiconductors held in San Diego, California, 18-22 September 1994 written by Herb Goronkin and published by CRC Press. This book was released on 1995-01-01 with total page 946 pages. Available in PDF, EPUB and Kindle. Book excerpt: Compound Semiconductors 1994 provides a comprehensive overview of research and applications of gallium arsenide, indium phosphide, silicon carbide, and other compound semiconducting materials. Contributed by leading experts, the book discusses growth, characterization, processing techniques, device applications, high-power, high-temperature semiconductor devices, visible emitters and optoelectronic integrated circuits (OEICs), heterojunction transistors, nanoelectronics, and nanophotonics, and simulation and modeling. The book is an essential reference for researchers working on the fabrication of semiconductors, characterization of materials, and their applications for devices, such as lasers, photodiodes, sensors, and transistors, particularly in the high-speed telecommunications industries.
Book Synopsis III-V Integrated Circuit Fabrication Technology by : Shiban Tiku
Download or read book III-V Integrated Circuit Fabrication Technology written by Shiban Tiku and published by CRC Press. This book was released on 2016-04-27 with total page 706 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaAs processing has reached a mature stage. New semiconductor compounds are emerging that will dominate future materials and device research, although the processing techniques used for GaAs will still remain relevant. This book covers all aspects of the current state of the art of III-V processing, with emphasis on HBTs. It is aimed at practicing
Book Synopsis Proceedings of the Twenty-Seventh State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXVII) by : S. N. G. Chu
Download or read book Proceedings of the Twenty-Seventh State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXVII) written by S. N. G. Chu and published by The Electrochemical Society. This book was released on 1997 with total page 408 pages. Available in PDF, EPUB and Kindle. Book excerpt:
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