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Analysis And Optimization Of Algan Gan High Electron Mobility Transistors For Microwave Applications
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Book Synopsis Analysis and Optimization of AlGaN/GaN High Electron Mobility Transistors for Microwave Applications by : Michael Hosch
Download or read book Analysis and Optimization of AlGaN/GaN High Electron Mobility Transistors for Microwave Applications written by Michael Hosch and published by Cuvillier Verlag. This book was released on 2011-08-08 with total page 129 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis deals with the analysis and optimization of some of the most prominent non-ideal effects in AlGaN/GaN high electron mobility transistors used in microwave applications as well as the optimization of the RF gain. The effect of current collapse, the root cause of leakage currents as well as field-dependent self-heating effects have been investigated by eletrical characterization using well established techniques and have been analyzed using 2-dimensional physical device simulations. It will be shown that the origin of all effects is strongly related to the device surface and some are even competing effects making device optimization a challenge. However, a detailed localization of the regions affecting device performance will be given leading to a better understanding for fabrication process optimization. Finally, I simulation study is conducted giving suggestions for RF gain improvement based on very simple device layout variations.
Book Synopsis Handbook for III-V High Electron Mobility Transistor Technologies by : D. Nirmal
Download or read book Handbook for III-V High Electron Mobility Transistor Technologies written by D. Nirmal and published by CRC Press. This book was released on 2019-05-14 with total page 443 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots
Book Synopsis Comprehensive Semiconductor Science and Technology by :
Download or read book Comprehensive Semiconductor Science and Technology written by and published by Newnes. This book was released on 2011-01-28 with total page 3572 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts
Book Synopsis Integration of AI, Quantum Computing, and Semiconductor Technology by : Mishra, Brojo Kishore
Download or read book Integration of AI, Quantum Computing, and Semiconductor Technology written by Mishra, Brojo Kishore and published by IGI Global. This book was released on 2024-10-29 with total page 534 pages. Available in PDF, EPUB and Kindle. Book excerpt: The integration of artificial intelligence (AI), quantum computing, and semiconductor technology offers improved innovation to redefine computational power and capabilities. As AI drives advances in machine learning and data processing, quantum computing revolutionizes problem-solving with its ability to handle complex calculations at improved speeds. Advancements in semiconductor technology push the limits of processing efficiency and miniaturization. Continued exploration on this convergence may accelerate breakthroughs in various fields such as cryptography, material science, and healthcare. Integration of AI, Quantum Computing, and Semiconductor Technology explores the intersection of artificial intelligence (AI) and semiconductor technology within the context of quantum computing. It offers a comprehensive analysis of the current advancements, challenges, and potential applications resulting from this convergence. This book covers topics such as cyber security, healthcare monitoring, and machine learning, and is a useful resource for computer engineers, energy scientists, business owners, healthcare administrators, environmental scientists, academicians, and researchers.
Book Synopsis VLSI, Microwave and Wireless Technologies by : Brijesh Mishra
Download or read book VLSI, Microwave and Wireless Technologies written by Brijesh Mishra and published by Springer Nature. This book was released on 2022-09-03 with total page 790 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book comprises the proceedings of the International Conference on VLSI & Microwave and Wireless Technologies (ICVMWT-2021). The book includes peer-reviewed papers on the core technological developments in emerging fields like wireless communication, RF microwave/radar, VLSI, optical communication, etc. The book will serve as a valuable reference resource for academics and researchers across the globe.
Book Synopsis Electronic Devices, Circuits, and Systems for Biomedical Applications by : Suman Lata Tripathi
Download or read book Electronic Devices, Circuits, and Systems for Biomedical Applications written by Suman Lata Tripathi and published by Academic Press. This book was released on 2021-04-28 with total page 586 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electronic Devices, Circuits, and Systems for Biomedical Applications: Challenges and Intelligent Approaches explains the latest information on the design of new technological solutions for low-power, high-speed efficient biomedical devices, circuits and systems. The book outlines new methods to enhance system performance, provides key parameters to explore the electronic devices and circuit biomedical applications, and discusses innovative materials that improve device performance, even for those with smaller dimensions and lower costs. This book is ideal for graduate students in biomedical engineering and medical informatics, biomedical engineers, medical device designers, and researchers in signal processing. - Presents major design challenges and research potential in biomedical systems - Walks readers through essential concepts in advanced biomedical system design - Focuses on healthcare system design for low power-efficient and highly-secured biomedical electronics
Book Synopsis Nanoelectronic Devices and Applications by : Trupti Ranjan Lenka
Download or read book Nanoelectronic Devices and Applications written by Trupti Ranjan Lenka and published by Bentham Science Publishers. This book was released on 2024-07-02 with total page 358 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanoelectronic Devices and Applications presents reviews on recent advances in nanoelectronic device design and new directions for their practical use. The volume includes 16 edited chapters that cover novel material systems, band engineering, modelling and simulations, fabrication and characterization techniques, and their emerging applications. The discussions presented in this book are based on current understandings on innovations and future trends, and references are provided for advanced scholars. Chapter 1 presents an overview of recent innovations and future prospects in III-nitride semiconductor technologies for RF, power, digital and quantum applications. Chapter 2 reports new trends in GaN-based optical devices for sensing and micro-display applications. Chapter 3 shows current interests in nanophosphors and their utilizations in improving device performance of InGaN nanowire light-emitting diodes (LEDs). Recent studies on the effect of potential profile on the carrier transport in AlGaAs based double quantum well structures and their applications are presented in Chapter 4. The recent progress in high-electron-mobility transistors (HEMTs) is presented through Chapters 5, 6, and 7. A comprehensive review on β-Ga2O3 emphasizing material properties, growth approaches, and its applications for next-generation high-power nanoelectronics; the effect of dielectric layers on the characteristics of AlN/β-Ga2O3 HEMTs are presented in Chapter 8 and 9 respectively. Chapters 10-14 summarize the recent studies in field-effect transistors (FETs) adopting different materials and structures. Chapter 15 presents current research in 2D Tungsten Diselenide (WSe2) with special focus on the material properties, device structures, applications, and challenges. Finally, Chapter 16 presents a systematic review of memristors, and memristive semiconductor devices. The book is intended as a primary resource for elective subjects in advanced electronics and computer engineering courses at university level. Researchers and industry professionals will also learn about emerging trends and state-of-the-art research in nanoelectronics.
Book Synopsis Gallium Nitride (GaN) by : Farid Medjdoub
Download or read book Gallium Nitride (GaN) written by Farid Medjdoub and published by CRC Press. This book was released on 2017-12-19 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt: Addresses a Growing Need for High-Power and High-Frequency Transistors Gallium Nitride (GaN): Physics, Devices, and Technology offers a balanced perspective on the state of the art in gallium nitride technology. A semiconductor commonly used in bright light-emitting diodes, GaN can serve as a great alternative to existing devices used in microelectronics. It has a wide band gap and high electron mobility that gives it special properties for applications in optoelectronic, high-power, and high-frequency devices, and because of its high off-state breakdown strength combined with excellent on-state channel conductivity, GaN is an ideal candidate for switching power transistors. Explores Recent Progress in High-Frequency GaN Technology Written by a panel of academic and industry experts from around the globe, this book reviews the advantages of GaN-based material systems suitable for high-frequency, high-power applications. It provides an overview of the semiconductor environment, outlines the fundamental device physics of GaN, and describes GaN materials and device structures that are needed for the next stage of microelectronics and optoelectronics. The book details the development of radio frequency (RF) semiconductor devices and circuits, considers the current challenges that the industry now faces, and examines future trends. In addition, the authors: Propose a design in which multiple LED stacks can be connected in a series using interband tunnel junction (TJ) interconnects Examine GaN technology while in its early stages of high-volume deployment in commercial and military products Consider the potential use of both sunlight and hydrogen as promising and prominent energy sources for this technology Introduce two unique methods, PEC oxidation and vapor cooling condensation methods, for the deposition of high-quality oxide layers A single-source reference for students and professionals, Gallium Nitride (GaN): Physics, Devices, and Technology provides an overall assessment of the semiconductor environment, discusses the potential use of GaN-based technology for RF semiconductor devices, and highlights the current and emerging applications of GaN.
Book Synopsis Innovations in Electronics and Communication Engineering by : H. S. Saini
Download or read book Innovations in Electronics and Communication Engineering written by H. S. Saini and published by Springer Nature. This book was released on 2020-04-22 with total page 781 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is a collection of the best research papers presented at the 8th International Conference on Innovations in Electronics and Communication Engineering at Guru Nanak Institutions Hyderabad, India. Featuring contributions by researchers, technocrats and experts, the book covers various areas of communication engineering, like signal processing, VLSI design, embedded systems, wireless communications, and electronics and communications in general, as well as cutting-edge technologies. As such, it is a valuable reference resource for young researchers.
Book Synopsis Micro and Nanoelectronics Devices, Circuits and Systems by : Trupti Ranjan Lenka
Download or read book Micro and Nanoelectronics Devices, Circuits and Systems written by Trupti Ranjan Lenka and published by Springer Nature. This book was released on 2023-10-04 with total page 519 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents select proceedings of the International Conference on Micro and Nanoelectronics Devices, Circuits and Systems (MNDCS-2023). The book includes cutting-edge research papers in the emerging fields of micro and nanoelectronics devices, circuits, and systems from experts working in these fields over the last decade. The book is a unique collection of chapters from different areas with a common theme and is immensely useful to academic researchers and practitioners in the industry who work in this field.
Author :Jaime Alberto Zamudio Flores Publisher :kassel university press GmbH ISBN 13 :3862193640 Total Pages :257 pages Book Rating :4.8/5 (621 download)
Book Synopsis Device Characterization and Modeling of Large-Size GaN HEMTs by : Jaime Alberto Zamudio Flores
Download or read book Device Characterization and Modeling of Large-Size GaN HEMTs written by Jaime Alberto Zamudio Flores and published by kassel university press GmbH. This book was released on 2012-08-21 with total page 257 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work presents a comprehensive modeling strategy for advanced large-size AlGaN/GaN HEMTs. A 22-element equivalent circuit with 12 extrinsic elements, including 6 capacitances, serves as small-signal model and as basis for a large-signal model. ANalysis of such capacitances leads to original equations, employed to form capacitance ratios. BAsic assumptions of existing parameter extractions for 22-element equivalent circuits are perfected: A) Required capacitance ratios are evaluated with device's top-view images. B) Influences of field plates and source air-bridges on these ratios are considered. The large-signal model contains a gate charge's non-quasi-static model and a dispersive-IDS model. THe extrinsic-to-intrinsic voltage transformation needed to calculate non-quasi-static parameters from small-signal parameters is improved with a new description for the measurement's boundary bias points. ALl IDS-model parameters, including time constants of charge-trapping and self-heating, are extracted using pulsed-DC IV and IDS-transient measurements, highlighting the modeling strategy's empirical character.
Book Synopsis Physics of Semiconductor Devices by : Vikram Kumar
Download or read book Physics of Semiconductor Devices written by Vikram Kumar and published by Allied Publishers. This book was released on 2002 with total page 748 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Envelope Tracking Power Amplifiers for Wireless Communications by : Zhancang Wang
Download or read book Envelope Tracking Power Amplifiers for Wireless Communications written by Zhancang Wang and published by Artech House. This book was released on 2014-06-01 with total page 363 pages. Available in PDF, EPUB and Kindle. Book excerpt: Envelope tracking technology is seen as the most promising efficiency enhancement technology for RF power amplifiers for 4G and beyond wireless communications. More and more organizations are investing and researching on this topic with huge potential in academic and commercial areas. This is the first book on the market to offer complete introduction, theory, and design considerations on envelope tracking for wireless communications. This resource presents you with a full introduction to the subject and covers underlying theory and practical design considerations.
Book Synopsis Physics of Semiconductor Devices by : J.-P. Colinge
Download or read book Physics of Semiconductor Devices written by J.-P. Colinge and published by Springer Science & Business Media. This book was released on 2007-05-08 with total page 442 pages. Available in PDF, EPUB and Kindle. Book excerpt: Physics of Semiconductor Devices covers both basic classic topics such as energy band theory and the gradual-channel model of the MOSFET as well as advanced concepts and devices such as MOSFET short-channel effects, low-dimensional devices and single-electron transistors. Concepts are introduced to the reader in a simple way, often using comparisons to everyday-life experiences such as simple fluid mechanics. They are then explained in depth and mathematical developments are fully described. Physics of Semiconductor Devices contains a list of problems that can be used as homework assignments or can be solved in class to exemplify the theory. Many of these problems make use of Matlab and are aimed at illustrating theoretical concepts in a graphical manner.
Book Synopsis Nanoelectronic Materials, Devices and Modeling by : Qiliang Li
Download or read book Nanoelectronic Materials, Devices and Modeling written by Qiliang Li and published by MDPI. This book was released on 2019-07-15 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt: As CMOS scaling is approaching the fundamental physical limits, a wide range of new nanoelectronic materials and devices have been proposed and explored to extend and/or replace the current electronic devices and circuits so as to maintain progress with respect to speed and integration density. The major limitations, including low carrier mobility, degraded subthreshold slope, and heat dissipation, have become more challenging to address as the size of silicon-based metal oxide semiconductor field effect transistors (MOSFETs) has decreased to nanometers, while device integration density has increased. This book aims to present technical approaches that address the need for new nanoelectronic materials and devices. The focus is on new concepts and knowledge in nanoscience and nanotechnology for applications in logic, memory, sensors, photonics, and renewable energy. This research on nanoelectronic materials and devices will be instructive in finding solutions to address the challenges of current electronics in switching speed, power consumption, and heat dissipation and will be of great interest to academic society and the industry.
Book Synopsis Advances in GaN, GaAs, SiC and Related Alloys on Silicon Substrates: Volume 1068 by : Materials Research Society. Meeting Symposium C.
Download or read book Advances in GaN, GaAs, SiC and Related Alloys on Silicon Substrates: Volume 1068 written by Materials Research Society. Meeting Symposium C. and published by . This book was released on 2008-08-29 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Book Synopsis Proceedings of the Scientific-Practical Conference "Research and Development - 2016" by : K. V. Anisimov
Download or read book Proceedings of the Scientific-Practical Conference "Research and Development - 2016" written by K. V. Anisimov and published by Springer. This book was released on 2017-12-04 with total page 715 pages. Available in PDF, EPUB and Kindle. Book excerpt: This open access book relates to the III Annual Conference hosted by The Ministry of Education and Science of the Russian Federation in December 2016. This event has summarized, analyzed and discussed the interim results, academic outputs and scientific achievements of the Russian Federal Targeted Programme “Research and Development in Priority Areas of Development of the Russian Scientific and Technological Complex for 2014–2020.” It contains 75 selected papers from 6 areas considered priority by the Federal Targeted Programme: computer science, ecology & environment sciences; energy and energy efficiency; lifesciences; nanoscience & nanotechnology and transport & communications. The chapters report the results of the 3-years research projects supported by the Programme and finalized in 2016.
