An Optical Investigation of Implantation Damage in GaAs Superlattices

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ISBN 13 :
Total Pages : 226 pages
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Book Synopsis An Optical Investigation of Implantation Damage in GaAs Superlattices by : Kibreab Mebrahtom Haile

Download or read book An Optical Investigation of Implantation Damage in GaAs Superlattices written by Kibreab Mebrahtom Haile and published by . This book was released on 2004 with total page 226 pages. Available in PDF, EPUB and Kindle. Book excerpt:

An Optical Investigation of Implantation Damage as GaAs Superlattices

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Book Synopsis An Optical Investigation of Implantation Damage as GaAs Superlattices by : Kibreab Mebrahtom Haile

Download or read book An Optical Investigation of Implantation Damage as GaAs Superlattices written by Kibreab Mebrahtom Haile and published by . This book was released on 2013 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: In this work tunability, implantation damage and recovery of GaAs doping superlattices implanted with hydrogen ions were studied. The applicability of two models of the optical properties of semiconductors was also investigated. GaAs doping superlattices were implanted with 0.5 MeV hydrogen ions at doses of 1012 cm-2, 1014 cm-2 and 1016 cm-2. This gradually modifies their optical characteristics from superlattice behaviour to something resembling the bulk material and beyond. Such a processing technique therefore provides a convenient way of tuning the optical properties of a superlattice semi-permanently. A combined result of ellipsometry and near infrared reflectance measurements showed that a single effective oscillator as well as a more advanced three-parameter model could be applied to the virgin and ion-implanted doping superlattices. This allowed us to determine the dose dependent effective band gap as well as other model parameters. Photoluminescence as well as normal and resonance Raman techniques were applied to study hydrogen ion implantation damage and its recovery. These techniques showed that implantation damage could be reversed to a large extent by a simple thermal annealing step.

Investigation of Implantation Damage in Al0̳̳.6Ga0̳̳.4As/GaAs Heterostructures Using Ion Channeling and Transmission Electron Microscopy

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Total Pages : 260 pages
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Book Synopsis Investigation of Implantation Damage in Al0̳̳.6Ga0̳̳.4As/GaAs Heterostructures Using Ion Channeling and Transmission Electron Microscopy by : Britt Anne Turkot

Download or read book Investigation of Implantation Damage in Al0̳̳.6Ga0̳̳.4As/GaAs Heterostructures Using Ion Channeling and Transmission Electron Microscopy written by Britt Anne Turkot and published by . This book was released on 1996 with total page 260 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Energy Research Abstracts

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ISBN 13 :
Total Pages : 754 pages
Book Rating : 4.3/5 (129 download)

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Book Synopsis Energy Research Abstracts by :

Download or read book Energy Research Abstracts written by and published by . This book was released on 1993 with total page 754 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Ion Implantation Damage in GaAs

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ISBN 13 :
Total Pages : 10 pages
Book Rating : 4.:/5 (16 download)

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Book Synopsis Ion Implantation Damage in GaAs by : C. R. Elliott

Download or read book Ion Implantation Damage in GaAs written by C. R. Elliott and published by . This book was released on 1977 with total page 10 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Scientific and Technical Aerospace Reports

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ISBN 13 :
Total Pages : 836 pages
Book Rating : 4.:/5 (31 download)

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Book Synopsis Scientific and Technical Aerospace Reports by :

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1994 with total page 836 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Physics Briefs

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ISBN 13 :
Total Pages : 1058 pages
Book Rating : 4.3/5 (91 download)

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Download or read book Physics Briefs written by and published by . This book was released on 1993 with total page 1058 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Research in Progress

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ISBN 13 :
Total Pages : 644 pages
Book Rating : 4.:/5 (39 download)

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Download or read book Research in Progress written by and published by . This book was released on 1983 with total page 644 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Journal of Research of the National Institute of Standards and Technology

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ISBN 13 :
Total Pages : 904 pages
Book Rating : 4.E/5 ( download)

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Book Synopsis Journal of Research of the National Institute of Standards and Technology by :

Download or read book Journal of Research of the National Institute of Standards and Technology written by and published by . This book was released on 1994 with total page 904 pages. Available in PDF, EPUB and Kindle. Book excerpt: Reports NIST research and development in the physical and engineering sciences in which the Institute is active. These include physics, chemistry, engineering, mathematics, and computer sciences. Emphasis on measurement methodology and the basic technology underlying standardization.

Solar Energy Update

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ISBN 13 :
Total Pages : 250 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Solar Energy Update by :

Download or read book Solar Energy Update written by and published by . This book was released on 1986 with total page 250 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Ion Implantation Technology - 92

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Publisher : Elsevier
ISBN 13 : 0444599800
Total Pages : 716 pages
Book Rating : 4.4/5 (445 download)

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Book Synopsis Ion Implantation Technology - 92 by : D.F. Downey

Download or read book Ion Implantation Technology - 92 written by D.F. Downey and published by Elsevier. This book was released on 2012-12-02 with total page 716 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion implantation technology has made a major contribution to the dramatic advances in integrated circuit technology since the early 1970's. The ever-present need for accurate models in ion implanted species will become absolutely vital in the future due to shrinking feature sizes. Successful wide application of ion implantation, as well as exploitation of newly identified opportunities, will require the development of comprehensive implant models. The 141 papers (including 24 invited papers) in this volume address the most recent developments in this field. New structures and possible approaches are described. The implications for ion implantation technology as well as additional observations of needs and opportunities are discussed. The volume will be of value to all those who are interested in acquiring a more complete understanding of the current developments in ion implantation processes and comprehensive implant models.

INIS Atomindex

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ISBN 13 :
Total Pages : 682 pages
Book Rating : 4.3/5 (91 download)

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Download or read book INIS Atomindex written by and published by . This book was released on 1995 with total page 682 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Government Reports Annual Index

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ISBN 13 :
Total Pages : 1316 pages
Book Rating : 4.:/5 (3 download)

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Download or read book Government Reports Annual Index written by and published by . This book was released on 1984 with total page 1316 pages. Available in PDF, EPUB and Kindle. Book excerpt:

ERDA Energy Research Abstracts

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ISBN 13 :
Total Pages : 652 pages
Book Rating : 4.:/5 (31 download)

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Download or read book ERDA Energy Research Abstracts written by and published by . This book was released on 1987 with total page 652 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Heteroepitaxy of Semiconductors

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Publisher : CRC Press
ISBN 13 : 1315355175
Total Pages : 794 pages
Book Rating : 4.3/5 (153 download)

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Book Synopsis Heteroepitaxy of Semiconductors by : John E. Ayers

Download or read book Heteroepitaxy of Semiconductors written by John E. Ayers and published by CRC Press. This book was released on 2016-10-03 with total page 794 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the past ten years, heteroepitaxy has continued to increase in importance with the explosive growth of the electronics industry and the development of a myriad of heteroepitaxial devices for solid state lighting, green energy, displays, communications, and digital computing. Our ever-growing understanding of the basic physics and chemistry underlying heteroepitaxy, especially lattice relaxation and dislocation dynamic, has enabled an ever-increasing emphasis on metamorphic devices. To reflect this focus, two all-new chapters have been included in this new edition. One chapter addresses metamorphic buffer layers, and the other covers metamorphic devices. The remaining seven chapters have been revised extensively with new material on crystal symmetry and relationships, III-nitride materials, lattice relaxation physics and models, in-situ characterization, and reciprocal space maps.

ONR Far East Scientific Bulletin

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ISBN 13 :
Total Pages : 536 pages
Book Rating : 4.3/5 (91 download)

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Download or read book ONR Far East Scientific Bulletin written by and published by . This book was released on 1987 with total page 536 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Research in Progress

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ISBN 13 :
Total Pages : 316 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Research in Progress by : United States. Army Research Office

Download or read book Research in Progress written by United States. Army Research Office and published by . This book was released on 1983 with total page 316 pages. Available in PDF, EPUB and Kindle. Book excerpt: Vols. for 1977- consist of two parts: Chemistry, biological sciences, engineering sciences, metallurgy and materials science (issued in the spring); and Physics, electronics, mathematics, geosciences (issued in the fall).