An Analysis of the Effects of Low Energy Electron Radiation of Al(sub X) Ga(sub 1-x)N/GaN Modulation-Doped Field-Effect Transistors

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ISBN 13 : 9781423516590
Total Pages : 143 pages
Book Rating : 4.5/5 (165 download)

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Book Synopsis An Analysis of the Effects of Low Energy Electron Radiation of Al(sub X) Ga(sub 1-x)N/GaN Modulation-Doped Field-Effect Transistors by : James M. Sattler

Download or read book An Analysis of the Effects of Low Energy Electron Radiation of Al(sub X) Ga(sub 1-x)N/GaN Modulation-Doped Field-Effect Transistors written by James M. Sattler and published by . This book was released on 2004-03-01 with total page 143 pages. Available in PDF, EPUB and Kindle. Book excerpt: The effects of radiation on AlxGa1-xN/GaN MODFETs is an area of increasing interest to the USAF as these devices become developed and integrated in satellite-based systems Irradiation is also a valuable tool for analyzing the quantum-level characteristics and properties that are responsible for device operation AlxGa1-xN/GaN MODFETs were fabricated and irradiated at liquid nitrogen temperatures by 0,45-1,2MeV electrons up to doses of 6*10(exp 16) e/ cm2. Following irradiation, low temperature I-V measurements were recorded providing dose-dependent measurements Temperature-dependent I-V measurements were also made during room temperature annealing following irradiation I-V measurements indicate radiation-induced changes occur in these devices creating increased gate and drain currents These increased currents are only maintained at low temperatures (T

An Analysis of the Effects of Low Energy Electron Radiation on AlxGa1-xN/GaN Modulation-doped Field-effect Transistors

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ISBN 13 :
Total Pages : 240 pages
Book Rating : 4.:/5 (132 download)

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Book Synopsis An Analysis of the Effects of Low Energy Electron Radiation on AlxGa1-xN/GaN Modulation-doped Field-effect Transistors by : James M. Sattler (2LT, USAF.)

Download or read book An Analysis of the Effects of Low Energy Electron Radiation on AlxGa1-xN/GaN Modulation-doped Field-effect Transistors written by James M. Sattler (2LT, USAF.) and published by . This book was released on 2004 with total page 240 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Power GaN Devices

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Publisher : Springer
ISBN 13 : 3319431994
Total Pages : 383 pages
Book Rating : 4.3/5 (194 download)

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Book Synopsis Power GaN Devices by : Matteo Meneghini

Download or read book Power GaN Devices written by Matteo Meneghini and published by Springer. This book was released on 2016-09-08 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.

Strain Effect in Semiconductors

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Publisher : Springer Science & Business Media
ISBN 13 : 1441905529
Total Pages : 353 pages
Book Rating : 4.4/5 (419 download)

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Book Synopsis Strain Effect in Semiconductors by : Yongke Sun

Download or read book Strain Effect in Semiconductors written by Yongke Sun and published by Springer Science & Business Media. This book was released on 2009-11-14 with total page 353 pages. Available in PDF, EPUB and Kindle. Book excerpt: Strain Effect in Semiconductors: Theory and Device Applications presents the fundamentals and applications of strain in semiconductors and semiconductor devices that is relevant for strain-enhanced advanced CMOS technology and strain-based piezoresistive MEMS transducers. Discusses relevant applications of strain while also focusing on the fundamental physics pertaining to bulk, planar, and scaled nano-devices. Hence, this book is relevant for current strained Si logic technology as well as for understanding the physics and scaling for future strained nano-scale devices.

Social Transformation – Digital Way

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Publisher : Springer
ISBN 13 : 9811313431
Total Pages : 749 pages
Book Rating : 4.8/5 (113 download)

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Book Synopsis Social Transformation – Digital Way by : Jyotsna Kumar Mandal

Download or read book Social Transformation – Digital Way written by Jyotsna Kumar Mandal and published by Springer. This book was released on 2018-08-23 with total page 749 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book constitutes the refereed proceedings of the 52nd Annual Convention of the Computer Society of India, CSI 2017, held in Kolkata, India, in January 2018. The 59 revised papers presented were carefully reviewed and selected from 157 submissions. The theme of CSI 2017, Social Transformation – Digital Way, was selected to highlight the importance of technology for both central and state governments at their respective levels to achieve doorstep connectivity with its citizens. The papers are organized in the following topical sections: Signal processing, microwave and communication engineering; circuits and systems; data science and data analytics; bio computing; social computing; mobile, nano, quantum computing; data mining; security and forensics; digital image processing; and computational intelligence.

Semiconductor Optoelectronic Devices

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Publisher : Elsevier
ISBN 13 : 0080469787
Total Pages : 296 pages
Book Rating : 4.0/5 (84 download)

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Book Synopsis Semiconductor Optoelectronic Devices by : Joachim Piprek

Download or read book Semiconductor Optoelectronic Devices written by Joachim Piprek and published by Elsevier. This book was released on 2013-10-22 with total page 296 pages. Available in PDF, EPUB and Kindle. Book excerpt: Optoelectronics has become an important part of our lives. Wherever light is used to transmit information, tiny semiconductor devices are needed to transfer electrical current into optical signals and vice versa. Examples include light emitting diodes in radios and other appliances, photodetectors in elevator doors and digital cameras, and laser diodes that transmit phone calls through glass fibers. Such optoelectronic devices take advantage of sophisticated interactions between electrons and light. Nanometer scale semiconductor structures are often at the heart of modern optoelectronic devices. Their shrinking size and increasing complexity make computer simulation an important tool to design better devices that meet ever rising perfomance requirements. The current need to apply advanced design software in optoelectronics follows the trend observed in the 1980's with simulation software for silicon devices. Today, software for technology computer-aided design (TCAD) and electronic design automation (EDA) represents a fundamental part of the silicon industry. In optoelectronics, advanced commercial device software has emerged recently and it is expected to play an increasingly important role in the near future. This book will enable students, device engineers, and researchers to more effectively use advanced design software in optoelectronics. - Provides fundamental knowledge in semiconductor physics and in electromagnetics, while helping to understand and use advanced device simulation software - Demonstrates the combination of measurements and simulations in order to obtain realistic results and provides data on all required material parameters - Gives deep insight into the physics of state-of-the-art devices and helps to design and analyze of modern optoelectronic devices

Physical Foundations of Solid-State Devices

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Publisher : E. Fred Schubert
ISBN 13 : 0986382620
Total Pages : 318 pages
Book Rating : 4.9/5 (863 download)

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Book Synopsis Physical Foundations of Solid-State Devices by : E. Fred Schubert

Download or read book Physical Foundations of Solid-State Devices written by E. Fred Schubert and published by E. Fred Schubert. This book was released on 2022-02-22 with total page 318 pages. Available in PDF, EPUB and Kindle. Book excerpt: It is beneficial for technical personnel working in the field of microelectronics, optoelectronics, and photonics to get a good understanding of the physical foundations of modern semiconductor devices. Questions that technical personnel may ask are: How are electrons propagating in the periodic potential of a crystal lattice? What are the foundations of semiconductor heterostructure devices? How does quantum mechanics relate to semiconductor heterostructures? This book tries to answer questions such as these. The book provides a basis for the understanding of modern semiconductor devices that have dimensions in the nanometer range, that is, comparable to the electron de Broglie wavelength. For such small spatial dimensions, classical physics no longer gives a full description of physical processes. The inclusion of quantum mechanical principles becomes mandatory and provides a useful description of common physical processes in electronic, optoelectronic, and photonic devices. Chapters 1 to 11 teach the quantum‐mechanical principles, including the postulates of quantum mechanics, operators, the uncertainty principle, the Schrödinger equation, non‐periodic and periodic potentials, quantum wells, and perturbation theory. Chapters 12 to 20 apply these principles to semiconductor devices and discuss the density of states, semiconductor statistics, carrier concentrations, doping, tunneling, and aspects of heterostructure devices. The 2022 edition is a complete revision of the 2015 edition and also updates the formatting to make it easily viewable with electronic display devices.

Semiconductor Laser Theory

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Publisher : CRC Press
ISBN 13 : 1466561920
Total Pages : 551 pages
Book Rating : 4.4/5 (665 download)

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Book Synopsis Semiconductor Laser Theory by : Prasanta Kumar Basu

Download or read book Semiconductor Laser Theory written by Prasanta Kumar Basu and published by CRC Press. This book was released on 2015-06-17 with total page 551 pages. Available in PDF, EPUB and Kindle. Book excerpt: Developed from the authors' classroom-tested material, Semiconductor Laser Theory takes a semiclassical approach to teaching the principles, structure, and applications of semiconductor lasers. Designed for graduate students in physics, electrical engineering, and materials science, the text covers many recent developments, including diode lasers u

Optoelectronic Devices

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Publisher : Elsevier
ISBN 13 : 9780080444260
Total Pages : 602 pages
Book Rating : 4.4/5 (442 download)

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Book Synopsis Optoelectronic Devices by : M Razeghi

Download or read book Optoelectronic Devices written by M Razeghi and published by Elsevier. This book was released on 2004 with total page 602 pages. Available in PDF, EPUB and Kindle. Book excerpt: Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. Broad review of optoelectronic applications of III-V nitrides

Ultra-wide Bandgap Semiconductor Materials

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Publisher : Elsevier
ISBN 13 : 0128172568
Total Pages : 506 pages
Book Rating : 4.1/5 (281 download)

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Book Synopsis Ultra-wide Bandgap Semiconductor Materials by : Meiyong Liao

Download or read book Ultra-wide Bandgap Semiconductor Materials written by Meiyong Liao and published by Elsevier. This book was released on 2019-06-18 with total page 506 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ultra-wide Bandgap Semiconductors (UWBG) covers the most recent progress in UWBG materials, including sections on high-Al-content AlGaN, diamond, B-Ga2O3, and boron nitrides. The coverage of these materials is comprehensive, addressing materials growth, physics properties, doping, device design, fabrication and performance. The most relevant and important applications are covered, including power electronics, RF electronics and DUV optoelectronics. There is also a chapter on novel structures based on UWBG, such as the heterojunctions, the low-dimensional structures, and their devices. This book is ideal for materials scientists and engineers in academia and R&D searching for materials superior to silicon carbide and gallium nitride. - Provides a one-stop resource on the most promising ultra-wide bandgap semiconducting materials, including high-Al-content AlGaN, diamond, ß-Ga2O3, boron nitrides, and low-dimensional materials - Presents comprehensive coverage, from materials growth and properties, to device design, fabrication and performance - Features the most relevant applications, including power electronics, RF electronics and DUV optoelectronics

Photovoltaic Fundamentals

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Publisher :
ISBN 13 :
Total Pages : 70 pages
Book Rating : 4.3/5 ( download)

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Book Synopsis Photovoltaic Fundamentals by : Gary Cook

Download or read book Photovoltaic Fundamentals written by Gary Cook and published by . This book was released on 1991 with total page 70 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Bismuth-Containing Alloys and Nanostructures

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Publisher : Springer
ISBN 13 : 9811380783
Total Pages : 403 pages
Book Rating : 4.8/5 (113 download)

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Book Synopsis Bismuth-Containing Alloys and Nanostructures by : Shumin Wang

Download or read book Bismuth-Containing Alloys and Nanostructures written by Shumin Wang and published by Springer. This book was released on 2019-07-03 with total page 403 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focuses on novel bismuth-containing alloys and nanostructures, covering a wide range of materials from semiconductors, topological insulators, silica optical fibers and to multiferroic materials. It provides a timely overview of bismuth alloys and nanostructures, from material synthesis and physical properties to device applications and also includes the latest research findings. Bismuth is considered to be a sustainable and environmentally friendly element, and has received increasing attention in a variety of innovative research areas in recent years. The book is intended as a reference resource and textbook for graduate students and researchers working in these fields.

Gallium Nitride Power Devices

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Publisher : CRC Press
ISBN 13 : 1351767607
Total Pages : 301 pages
Book Rating : 4.3/5 (517 download)

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Book Synopsis Gallium Nitride Power Devices by : Hongyu Yu

Download or read book Gallium Nitride Power Devices written by Hongyu Yu and published by CRC Press. This book was released on 2017-07-06 with total page 301 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaN is considered the most promising material candidate in next-generation power device applications, owing to its unique material properties, for example, bandgap, high breakdown field, and high electron mobility. Therefore, GaN power device technologies are listed as the top priority to be developed in many countries, including the United States, the European Union, Japan, and China. This book presents a comprehensive overview of GaN power device technologies, for example, material growth, property analysis, device structure design, fabrication process, reliability, failure analysis, and packaging. It provides useful information to both students and researchers in academic and related industries working on GaN power devices. GaN wafer growth technology is from Enkris Semiconductor, currently one of the leading players in commercial GaN wafers. Chapters 3 and 7, on the GaN transistor fabrication process and GaN vertical power devices, are edited by Dr. Zhihong Liu, who has been working on GaN devices for more than ten years. Chapters 2 and 5, on the characteristics of polarization effects and the original demonstration of AlGaN/GaN heterojunction field-effect transistors, are written by researchers from Southwest Jiaotong University. Chapters 6, 8, and 9, on surface passivation, reliability, and package technologies, are edited by a group of researchers from the Southern University of Science and Technology of China.

Ultrawide Bandgap Semiconductors

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Publisher : Elsevier
ISBN 13 : 0128228709
Total Pages : 480 pages
Book Rating : 4.1/5 (282 download)

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Book Synopsis Ultrawide Bandgap Semiconductors by : Yuji Zhao

Download or read book Ultrawide Bandgap Semiconductors written by Yuji Zhao and published by Elsevier. This book was released on 2021-08-17 with total page 480 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ultrawide Bandgap Semiconductors, Volume 107 in the Semiconductors and Semimetals series, highlights the latest breakthrough in fundamental science and technology development of ultrawide bandgap (UWBG) semiconductor materials and devices based on gallium oxide, aluminium nitride, boron nitride, and diamond. It includes important topics on the materials growth, characterization, and device applications of UWBG materials, where electronic, photonic, thermal and quantum properties are all thoroughly explored. Contains the latest breakthrough in fundamental science and technology development of ultrawide bandgap (UWBG) semiconductor materials and devices Provides a comprehensive presentation that covers the fundamentals of materials growth and characterization, as well as design and performance characterization of state-of-the-art UWBG materials, structures, and devices Presents an in-depth discussion on electronic, photonic, thermal, and quantum technologies based on UWBG materials

Millimeter-Wave Integrated Circuits

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Publisher : Springer Science & Business Media
ISBN 13 : 038723666X
Total Pages : 277 pages
Book Rating : 4.3/5 (872 download)

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Book Synopsis Millimeter-Wave Integrated Circuits by : Eoin Carey

Download or read book Millimeter-Wave Integrated Circuits written by Eoin Carey and published by Springer Science & Business Media. This book was released on 2005-12-05 with total page 277 pages. Available in PDF, EPUB and Kindle. Book excerpt: Millimeter-Wave Integrated Circuits delivers a detailed overview of MMIC design, specifically focusing on designs for the millimeter-wave (mm-wave) frequency range. The scope of the book is broad, spanning detailed discussions of high-frequency materials and technologies, high-frequency devices, and the design of high-frequency circuits. The design material is supplemented as appropriate by theoretical analyses. The broad scope of the book gives the reader a good theoretical and practical understanding of mm-wave circuit design. It is best-suited for both undergraduate students who are reading or studying high frequency circuit design and postgraduate students who are specializing in the mm-wave field.

Silicon Nanomembranes

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Publisher : John Wiley & Sons
ISBN 13 : 3527338314
Total Pages : 368 pages
Book Rating : 4.5/5 (273 download)

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Book Synopsis Silicon Nanomembranes by : John A. Rogers

Download or read book Silicon Nanomembranes written by John A. Rogers and published by John Wiley & Sons. This book was released on 2016-08-08 with total page 368 pages. Available in PDF, EPUB and Kindle. Book excerpt: Edited by the leaders in the fi eld, with chapters from highly renowned international researchers, this is the fi rst coherent overview of the latest in silicon nanomembrane research. As such, it focuses on the fundamental and applied aspects of silicon nanomembranes, ranging from synthesis and manipulation to manufacturing, device integration and system level applications, including uses in bio-integrated electronics, three-dimensional integrated photonics, solar cells, and transient electronics. The first part describes in detail the fundamental physics and materials science involved, as well as synthetic approaches and assembly and manufacturing strategies, while the second covers the wide range of device applications and system level demonstrators already achieved, with examples taken from electronics and photonics and from biomedicine and energy.

Gallium Oxide

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Publisher : Springer Nature
ISBN 13 : 3030371530
Total Pages : 768 pages
Book Rating : 4.0/5 (33 download)

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Book Synopsis Gallium Oxide by : Masataka Higashiwaki

Download or read book Gallium Oxide written by Masataka Higashiwaki and published by Springer Nature. This book was released on 2020-04-23 with total page 768 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides comprehensive coverage of the new wide-bandgap semiconductor gallium oxide (Ga2O3). Ga2O3 has been attracting much attention due to its excellent materials properties. It features an extremely large bandgap of greater than 4.5 eV and availability of large-size, high-quality native substrates produced from melt-grown bulk single crystals. Ga2O3 is thus a rising star among ultra-wide-bandgap semiconductors and represents a key emerging research field for the worldwide semiconductor community. Expert chapters cover physical properties, synthesis, and state-of-the-art applications, including materials properties, growth techniques of melt-grown bulk single crystals and epitaxial thin films, and many types of devices. The book is an essential resource for academic and industry readers who have an interest in, or plan to start, a new R&D project related to Ga2O3.