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Advanced Gate Stack Source Drain And Channel Engineering For Si Based Cmos 5 New Materials Processes And Equipment
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Book Synopsis Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 5: New Materials, Processes, and Equipment by : V. Narayanan
Download or read book Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 5: New Materials, Processes, and Equipment written by V. Narayanan and published by The Electrochemical Society. This book was released on 2009-05 with total page 367 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue of ¿ECS Transactions¿ describes processing, materials and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics include strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.
Book Synopsis Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4: New Materials, Processes, and Equipment by : P. J. Timans
Download or read book Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4: New Materials, Processes, and Equipment written by P. J. Timans and published by The Electrochemical Society. This book was released on 2008-05 with total page 488 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue describes processing, materials and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics: strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.
Book Synopsis Advanced Gate Stack, Source/drain and Channel Engineering for Si-based CMOS by :
Download or read book Advanced Gate Stack, Source/drain and Channel Engineering for Si-based CMOS written by and published by . This book was released on 2005 with total page 658 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6: New Materials, Processes, and Equipment by : E. P. Gusev
Download or read book Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6: New Materials, Processes, and Equipment written by E. P. Gusev and published by The Electrochemical Society. This book was released on 2010-04 with total page 426 pages. Available in PDF, EPUB and Kindle. Book excerpt: These proceedings describe processing, materials and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics: strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.
Book Synopsis Advanced Gate Stack, Source/drain, and Channel Engineering for Si-based CMOS 2 by : Fred Roozeboom
Download or read book Advanced Gate Stack, Source/drain, and Channel Engineering for Si-based CMOS 2 written by Fred Roozeboom and published by The Electrochemical Society. This book was released on 2006 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: These proceedings describe processing, materials, and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics: strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.
Book Synopsis Advanced Gate Stack, Source/drain, and Channel Engineering So Si-based CMOS 6: New Materials, Processes and Equipment by : E. P. Gusev
Download or read book Advanced Gate Stack, Source/drain, and Channel Engineering So Si-based CMOS 6: New Materials, Processes and Equipment written by E. P. Gusev and published by . This book was released on 2010 with total page 412 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Defects in HIgh-k Gate Dielectric Stacks by : Evgeni Gusev
Download or read book Defects in HIgh-k Gate Dielectric Stacks written by Evgeni Gusev and published by Springer Science & Business Media. This book was released on 2006-01-27 with total page 516 pages. Available in PDF, EPUB and Kindle. Book excerpt: The main goal of this book is to review at the nano and atomic scale the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. One of the key obstacles to integrate this novel class of materials into Si nano-technology are the electronic defects in high-k dielectrics. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. The unique feature of this book is a special focus on the important issue of defects. The subject is covered from various angles, including silicon technology, processing aspects, materials properties, electrical defects, microstructural studies, and theory. The authors who have contributed to the book represents a diverse group of leading scientists from academic, industrial and governmental labs worldwide who bring a broad array of backgrounds (basic and applied physics, chemistry, electrical engineering, surface science, and materials science). The contributions to this book are accessible to both expert scientists and engineers who need to keep up with leading edge research, and newcomers to the field who wish to learn more about the exciting basic and applied research issues relevant to next generation device technology.
Book Synopsis Physics and Technology of High-k Gate Dielectrics 4 by : Samares Kar
Download or read book Physics and Technology of High-k Gate Dielectrics 4 written by Samares Kar and published by The Electrochemical Society. This book was released on 2006 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue covers, in detail, all aspects of the physics and the technology of high dielectric constant gate stacks, including high mobility substrates, high dielectric constant materials, processing, metals for gate electrodes, interfaces, physical, chemical, and electrical characterization, gate stack reliability, and DRAM and non-volatile memories.
Download or read book Plasma Processing 17 written by G. Mathad and published by The Electrochemical Society. This book was released on 2008-11 with total page 89 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue of ECS Transactions contains papers presented at the International Symposium on Plasma Processing. The symposium, 17th in the series, cosponsored by the Dielectric Science & Technology, Electronics, and Photonics Divisions was held as part of the 213th Meeting of The Electrochemical Society, Inc., in Phoenix, AZ, USA, May 18 - 23, 2008. A total of 14 papers were presented from Belgium, Germany, Italy, Japan, Republic of Korea, Russia, and the USA on topics mainly focused on diagnostics & measurements and etching & deposition processes.
Book Synopsis Solid State (General) - 214th ECS Meeting/PRiME 2008 by : J. Weidner
Download or read book Solid State (General) - 214th ECS Meeting/PRiME 2008 written by J. Weidner and published by The Electrochemical Society. This book was released on 2009-03 with total page 123 pages. Available in PDF, EPUB and Kindle. Book excerpt: The papers included in this issue of ECS Transactions were originally presented in the symposium ¿Solid-State Topics General Session¿, held during the PRiME 2008 joint international meeting of The Electrochemical Society and The Electrochemical Society of Japan, with the technical cosponsorship of the Japan Society of Applied Physics, the Korean Electrochemical Society, the Electrochemistry Division of the Royal Australian Chemical Institute, and the Chinese Society of Electrochemistry. This meeting was held in Honolulu, Hawaii, from October 12 to 17, 2008.
Book Synopsis Gate-stack and Channel Engineering for Advanced CMOS Technology by : Yee-Chia Yeo
Download or read book Gate-stack and Channel Engineering for Advanced CMOS Technology written by Yee-Chia Yeo and published by . This book was released on 2002 with total page 358 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Journal of the Electrochemical Society by :
Download or read book Journal of the Electrochemical Society written by and published by . This book was released on 2009 with total page 1020 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Advanced Gate Stack Materials and Processes for Sub-100 Nm CMOS Applcations by : Qiang Lu
Download or read book Advanced Gate Stack Materials and Processes for Sub-100 Nm CMOS Applcations written by Qiang Lu and published by . This book was released on 2002 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Advanced Gate Stacks for High-Mobility Semiconductors by : Athanasios Dimoulas
Download or read book Advanced Gate Stacks for High-Mobility Semiconductors written by Athanasios Dimoulas and published by Springer Science & Business Media. This book was released on 2008-01-01 with total page 397 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a comprehensive monograph on gate stacks in semiconductor technology. It covers the major latest developments and basics and will be useful as a reference work for researchers, engineers and graduate students alike. The reader will get a clear view of what has been done so far, what is the state-of-the-art and which are the main challenges ahead before we come any closer to a viable Ge and III-V MOS technology.
Book Synopsis Noise and Fluctuations by : Massimo Macucci
Download or read book Noise and Fluctuations written by Massimo Macucci and published by American Institute of Physics. This book was released on 2009-05-13 with total page 692 pages. Available in PDF, EPUB and Kindle. Book excerpt: The ICNF conference is a biennial event that brings together researchers interested in theoretical and experimental aspects of fluctuations across a wide spectrum of scientific and technological fields, ranging from heartbeat analysis to mesoscopic phsyics, to noise optimization of electron devices, to the variations of stock prices.
Book Synopsis IBM Journal of Research and Development by :
Download or read book IBM Journal of Research and Development written by and published by . This book was released on 2006 with total page 696 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Advanced Gate Stack Materials and Processes for Sub-nm CMOS Applications by : Qiang Lu
Download or read book Advanced Gate Stack Materials and Processes for Sub-nm CMOS Applications written by Qiang Lu and published by . This book was released on 2003 with total page 145 pages. Available in PDF, EPUB and Kindle. Book excerpt:
