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Author : Joseph Nayfach-Battilana
Publisher :
ISBN 13 :
Total Pages : 554 pages
Book Rating : 4.:/5 (79 download)
Download or read book Accurate, Full-system, Thermal Characterization of Semiconductor Devices written by Joseph Nayfach-Battilana and published by . This book was released on 2008 with total page 554 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Clemens J.M. Lasance
Publisher : Springer Science & Business Media
ISBN 13 : 1461450918
Total Pages : 550 pages
Book Rating : 4.4/5 (614 download)
Download or read book Thermal Management for LED Applications written by Clemens J.M. Lasance and published by Springer Science & Business Media. This book was released on 2013-09-17 with total page 550 pages. Available in PDF, EPUB and Kindle. Book excerpt: Thermal Management for LED Applications provides state-of-the-art information on recent developments in thermal management as it relates to LEDs and LED-based systems and their applications. Coverage begins with an overview of the basics of thermal management including thermal design for LEDs, thermal characterization and testing of LEDs, and issues related to failure mechanisms and reliability and performance in harsh environments. Advances and recent developments in thermal management round out the book with discussions on advances in TIMs (thermal interface materials) for LED applications, advances in forced convection cooling of LEDs, and advances in heat sinks for LED assemblies.
Author : Richard Hopper
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (69 download)
Download or read book Accurate Temperature Measurements on Semiconductor Devices written by Richard Hopper and published by . This book was released on 2010 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Self-heating can have a detrimental effect on the performance and reliability of high power microwave devices. In this work, the thermal performance of the gallium arsenide (GaAs) Gunn diode was studied. Infrared (IR) thermal microscopy was used to measure the peak operating temperature of the graded-gap structured device. Temperature measurements were experimentally validated using micro-thermocouple probing and compared to values obtained from a standard 1D thermal resistance model. Thermal analysis of the conventionally structured Gunn diode was also undertaken using high resolution micro-Raman temperature profiling, IR thermal microscopy and electro/thermal finite element modeling. The accuracy of conventional IR temperature measurements, made on semiconductor devices, was investigated in detail. Significant temperature errors were shown to occur in IR temperature measurements made on IR transparent semiconductors layers and low emissivity/highly reflective metals. A new technique, employing spherical carbon microparticles, was developed to improve the measurement accuracy on such surfaces. The new 'IR microparticle' technique can be used with existing IR microscopes and potentially removes the need to coat a device with a high emissivity layer, which causes damage and heat spreading.
Author : Dieter K. Schroder
Publisher : John Wiley & Sons
ISBN 13 : 0471739065
Total Pages : 800 pages
Book Rating : 4.4/5 (717 download)
Download or read book Semiconductor Material and Device Characterization written by Dieter K. Schroder and published by John Wiley & Sons. This book was released on 2015-06-29 with total page 800 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.
Author : Mr. Zijian Li
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (87 download)
Download or read book Thermal Conduction Phenomena in Nanostructured Semiconductor Devices and Materials written by Mr. Zijian Li and published by . This book was released on 2012 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Thermal phenomena have become very important in a variety of nanostructured semiconductor devices and materials. The reduced dimensions and large interface densities lead to complex thermal phenomena which do not occur in bulk materials and larger devices. Successful designs of high-performance semiconductor devices, including phase change memory (PCM) and high electron mobility transistors (HEMT), rely on the accurate thermal characterization of thin film materials and improved understanding of nanoscale energy transport physics. This thesis addresses nanoscale thermal transport problems relevant for three promising electronics technologies. The first part of this work investigates thermal conduction phenomena in phase change memory. A combination of frequency-domain electrical thermometry and suspended microstructure design are used to measure the in- and out-of-plane thermal conductivities of thin-film Ge2Sb2Te5 in the amorphous and crystalline phases. The preferential grain orientation and mixed phase distribution lead to a reduced in-plane thermal conductivity that is 60% -- 80% of the out-of-plane value. Anisotropic heat conduction benefits PCM devices by reducing the programming current and mitigating the thermal disturbance to adjacent cells. A fully coupled electrothermal simulation unveils the detailed transient phase distribution during a programming operation, enabling more efficient structural designs for multilevel memory operation. This research extends the thermal characterization and modeling techniques to diamond-based high electron mobility transistors. The high thermal conductivity of the diamond provides superior thermal performance and allows for up to 10x higher power density. Nanoheaters down to 50 nm wide are patterned by electron-beam lithography in order to measure the thermal resistance experienced by the single transistor channel, the multi-gate configuration, and the device package. The thermal resistance data reveals the critical role of thermal interface between the GaN device layer and the diamond substrate. This work established a criterion for the diamond technology to be viable in HEMT applications. Specifically, the thermal interface resistance needs to be less than 30 m2K/GW. The lengthscales of thermal conduction studied in this research are further scaled down to a few nanometers in the final portion of this work. This work measures the thermal properties of the mirror material for extreme ultra-violet (EUV) lithography as the next-generation semiconductor manufacturing technology. The thermal transport across the interfaces of drastically different materials, such as the Mo/Si multilayers (2.8 nm / 4.1 nm), is important in the performance and reliability of the EUV mirrors. This work demonstrates strong anisotropy in the thermal conductivities of the multilayers, where the in-plane conductivity is 13 times higher than the out-of-plane value, owing to the high density of metal-semiconductor interfaces. This research reveals that thermal conduction in such periodic multilayer composites is largely determined by the nonequilibrium electron-phonon physics. A new model indicates that two additional mechanisms -- quasi-ballistic phonon transport normal to the metal film and inelastic electron-interface scattering -- can also impact conduction in metal-dielectric multilayers with period below 10 nm, the critical length scale for the EUV mirrors.
Author :
Publisher :
ISBN 13 :
Total Pages : 8 pages
Book Rating : 4.:/5 (227 download)
Download or read book High Resolution Non-Contact Thermal Characterization Semiconductor Devices written by and published by . This book was released on 2006 with total page 8 pages. Available in PDF, EPUB and Kindle. Book excerpt: Non-contact optical methods can be used for sub micron surface thermal characterization of active semiconductor devices. Point measurements were first made, and then real time thermal images were acquired with a specialized PINarray detector. This method of thermal imaging can have spatial resolution better than the diffraction limit of an infrared camera and can work in a wide range of ambient temperatures. The experimentally obtained thermal resolution is on the order of 50mK.
Author : Andrej Rumiantsev
Publisher : CRC Press
ISBN 13 : 1000792854
Total Pages : 279 pages
Book Rating : 4.0/5 (7 download)
Download or read book On-Wafer Calibration Techniques Enabling Accurate Characterization of High-Performance Silicon Devices at the mm-Wave Range and Beyond written by Andrej Rumiantsev and published by CRC Press. This book was released on 2022-09-01 with total page 279 pages. Available in PDF, EPUB and Kindle. Book excerpt: The increasing demand for more content, services, and security drives the development of high-speed wireless technologies, optical communication, automotive radar, imaging and sensing systems and many other mm-wave and THz applications. S-parameter measurement at mm-wave and sub-mm wave frequencies plays a crucial role in the modern IC design debug. Most importantly, however, is the step of device characterization for development and optimization of device model parameters for new technologies. Accurate characterization of the intrinsic device in its entire operation frequency range becomes extremely important and this task is very challenging. This book presents solutions for accurate mm-wave characterization of advanced semiconductor devices. It guides through the process of development, implementation and verification of the in-situ calibration methods optimized for high-performance silicon technologies. Technical topics discussed in the book include: Specifics of S-parameter measurements of planar structures Complete mathematical solution for lumped-standard based calibration methods, including the transfer Thru-Match-Reflect (TMR) algorithms Design guideline and examples for the on-wafer calibration standards realized in both advanced SiGe BiCMOS and RF CMOS processes Methods for verification of electrical characteristics of calibration standards and accuracy of the in-situ calibration results Comparison of the new technique vs. conventional approaches: the probe-tip calibration and the pad parasitic de-embedding for various device types, geometries and model parameters New aspects of the on-wafer RF measurements at mmWave frequency range and calibration assurance.
Author : Alhussein Albarbar
Publisher : Springer
ISBN 13 : 3319598287
Total Pages : 224 pages
Book Rating : 4.3/5 (195 download)
Download or read book Thermal Analysis of Power Electronic Devices Used in Renewable Energy Systems written by Alhussein Albarbar and published by Springer. This book was released on 2017-07-19 with total page 224 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book analyzes the thermal characteristics of power electronic devices (PEDs) with a focus on those used in wind and solar energy systems. The authors focus on the devices used in such applications, for example boost converters and inverters under different operating conditions. The book explains in detail finite element modeling techniques, setting up measuring systems, data analysis, and PEDs’ lifetime calculations. It is appropriate reading for graduate students and researchers who focus on the design and reliability of power electronic devices.
Author : Kaveh Azar
Publisher : CRC Press
ISBN 13 : 1000102769
Total Pages : 496 pages
Book Rating : 4.0/5 (1 download)
Download or read book Thermal Measurements in Electronics Cooling written by Kaveh Azar and published by CRC Press. This book was released on 2020-08-26 with total page 496 pages. Available in PDF, EPUB and Kindle. Book excerpt: Filled with careful explanations, step-by-step instructions, and useful examples, this handbook focuses on real-world considerations and applications of thermal measurement methods in electronics cooling. Fifteen experts in thermal engineering combine their expertise to create a complete guide to this complex topic. This practical reference covers all aspects of thermal characterization in electronics cooling and thermal management. The first part of the book introduces the concept of electronics cooling and its associated thermal phenomenon and explains why experimental investigation is required. Subsequent chapters explain methods of measuring different parameters and introduce relevant examples. Sources for locating needed equipment, tables, checklists, and to-do lists are included. Sample calculations and methodologies for error analysis ensure that you can put this valuable information to use in your work.
Author : F. Patrick McCluskey
Publisher : CRC Press
ISBN 13 : 1351440802
Total Pages : 354 pages
Book Rating : 4.3/5 (514 download)
Download or read book High Temperature Electronics written by F. Patrick McCluskey and published by CRC Press. This book was released on 2018-05-04 with total page 354 pages. Available in PDF, EPUB and Kindle. Book excerpt: The development of electronics that can operate at high temperatures has been identified as a critical technology for the next century. Increasingly, engineers will be called upon to design avionics, automotive, and geophysical electronic systems requiring components and packaging reliable to 200 °C and beyond. Until now, however, they have had no single resource on high temperature electronics to assist them. Such a resource is critically needed, since the design and manufacture of electronic components have now made it possible to design electronic systems that will operate reliably above the traditional temperature limit of 125 °C. However, successful system development efforts hinge on a firm understanding of the fundamentals of semiconductor physics and device processing, materials selection, package design, and thermal management, together with a knowledge of the intended application environments. High Temperature Electronics brings together this essential information and presents it for the first time in a unified way. Packaging and device engineers and technologists will find this book required reading for its coverage of the techniques and tradeoffs involved in materials selection, design, and thermal management and for its presentation of best design practices using actual fielded systems as examples. In addition, professors and students will find this book suitable for graduate-level courses because of its detailed level of explanation and its coverage of fundamental scientific concepts. Experts from the field of high temperature electronics have contributed to nine chapters covering topics ranging from semiconductor device selection to testing and final assembly.
Author : National Institute of Standards and Technology (U.S.)
Publisher :
ISBN 13 :
Total Pages : 178 pages
Book Rating : 4.E/5 ( download)
Download or read book Guide to NIST written by National Institute of Standards and Technology (U.S.) and published by . This book was released on 1996 with total page 178 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Seyed Masood Razavi
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (132 download)
Download or read book Advanced Thermal Analysis of Microelectronics Using Spreading Resistance Models written by Seyed Masood Razavi and published by . This book was released on 2016 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Thermal analysis of electronic devices is one of the most important steps for designing of modern devices. Precise thermal analysis is essential for designing an effective thermal management system of modern electronic devices such as batteries, LEDs, microelectronics, ICs, circuit boards, semiconductors and heat spreaders. For having a precise thermal analysis, the temperature profile and thermal spreading resistance of the device should be calculated by considering the geometry, property and boundary conditions. Thermal spreading resistance occurs when heat enters through a portion of a surface and flows by conduction. It is the primary source of thermal resistance when heat flows from a tiny heat source to a thin and wide heat spreader. In this thesis, analytical models for modeling the temperature behavior and thermal resistance in some common geometries of microelectronic devices such as heat channels and heat tubes are investigated. Different boundary conditions for the system are considered. Along the source plane, a combination of discretely specified heat flux, specified temperatures and adiabatic condition are studied. Along the walls of the system, adiabatic or convective cooling boundary conditions are assumed. Along the sink plane, convective cooling with constant or variable heat transfer coefficient are considered. Also, the effect of orthotropic properties is discussed. This thesis contains nine chapters. Chapter one is the introduction and shows the concepts of thermal spreading resistance besides the originality and importance of the work. Chapter two reviews the literatures on the thermal spreading resistance in the past fifty years with a focus on the recent advances. In chapters three and four, thermal resistance of a twodimensional flux channel with non-uniform convection coefficient in the heat sink plane is studied. The non-uniform convection is modeled by using two functions than can simulate a wide variety of different heat sink configurations. In chapter five, a non-symmetrical flux channel with different heat transfer coefficient along the right and left edges and sink plane is analytically modeled. Due to the edge cooling and non-symmetry, the eigenvalues of the system are defined using the heat transfer coefficient on both edges and for satisfying the orthogonality condition, a normalized function is calculated. In chapter six, thermal behavior of two-dimensional rectangular flux channel with arbitrary boundary conditions on the source plane is presented. The boundary condition along the source plane can be a combination of the first kind boundary condition (Dirichlet or prescribed temperature) and the second kind boundary condition (Neumann or prescribed heat flux). The proposed solution can be used for modeling the flux channels with numerous different source plane boundary conditions without any limitations in the number and position of heat sources. In chapter seven, temperature profile of a circular flux tube with discretely specified boundary conditions along the source plane is presented. Also, the effect of orthotropic properties are discussed. In chapter 8, a three-dimensional rectangular flux channel with a non-uniform heat convection along the heat sink plane is analytically modeled. In chapter nine, a summary of the achievements is presented and some systems are proposed for the future studies. It is worth mentioning that all the models and case studies in the thesis are compared with the Finite Element Method (FEM).
Author : Giovanni Agostini
Publisher : Elsevier
ISBN 13 : 0080558151
Total Pages : 501 pages
Book Rating : 4.0/5 (85 download)
Download or read book Characterization of Semiconductor Heterostructures and Nanostructures written by Giovanni Agostini and published by Elsevier. This book was released on 2011-08-11 with total page 501 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the last couple of decades, high-performance electronic and optoelectronic devices based on semiconductor heterostructures have been required to obtain increasingly strict and well-defined performances, needing a detailed control, at the atomic level, of the structural composition of the buried interfaces. This goal has been achieved by an improvement of the epitaxial growth techniques and by the parallel use of increasingly sophisticated characterization techniques and of refined theoretical models based on ab initio approaches. This book deals with description of both characterization techniques and theoretical models needed to understand and predict the structural and electronic properties of semiconductor heterostructures and nanostructures. - Comprehensive collection of the most powerful characterization techniques for semiconductor heterostructures and nanostructures - Most of the chapters are authored by scientists that are among the top 10 worldwide in publication ranking of the specific field - Each chapter starts with a didactic introduction on the technique - The second part of each chapter deals with a selection of top examples highlighting the power of the specific technique to analyze the properties of semiconductors
Author : DIANE Publishing Company
Publisher : DIANE Publishing
ISBN 13 : 9780788146237
Total Pages : 168 pages
Book Rating : 4.1/5 (462 download)
Download or read book Guide to NIST (National Institute of Standards and Technology) written by DIANE Publishing Company and published by DIANE Publishing. This book was released on 1997-07 with total page 168 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gathers in one place descriptions of NIST's many programs, products, services, and research projects, along with contact names, phone numbers, and e-mail and World Wide Web addresses for further information. It is divided into chapters covering each of NIST's major operating units. In addition, each chapter on laboratory programs includes subheadings for NIST organizational division or subject areas. Covers: electronics and electrical engineering; manufacturing engineering; chemical science and technology; physics; materials science and engineering; building and fire research and information technology.
Author : Qinggao Mei
Publisher : Open Dissertation Press
ISBN 13 : 9781361025307
Total Pages : 76 pages
Book Rating : 4.0/5 (253 download)
Download or read book EFFICIENT LARGE-SCALE TRANSIEN written by Qinggao Mei and published by Open Dissertation Press. This book was released on 2017-01-26 with total page 76 pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation, "An Efficient Large-scale Transient Electro-thermal Field Simulator for Power Devices" by Qinggao, Mei, 梅清高, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. Abstract: With ever-decreasing device size and extensive use of energy-consuming smart devices, heat generated within devices easily leads to extremely high temperature. In return, high temperature influences electrical operational characteristics of the semiconductor devices. Therefore, it is essential for designers to predict accurate temperature and voltage/current distribution and its impact on various devices. For this purpose, coupled electro-thermal (ET) simulation is indispensable. Another concern lies in the number of matrix elements for computation, possibly millions of elements, resulting in days of heavy computation. Therefore, a fast yet accurate modeling framework of overcoming the simulation difficulty is required. In this dissertation, a new transient electro-thermal simulation method for fast 3D chip-level analysis of power devices with field solver accuracy is proposed. The metallization stack and substrate are meshed and solved with 3D field solver using nonlinear temperature-dependent electrical and thermal parameters, and the active transistors are modeled with table models to avoid time-consuming TCAD simulation. Three main contributions are made to enhance physical relevance and computational performance. First, both implicit loose and tight coupling schemes are introduced to compare their computational performances under different coupling degrees. Also, their complexity analysis is presented. Second, the capacitive effects, including interconnect parasitic capacitance and gate capacitance of power devices with nonlinear dependence on bias and temperature, are explicitly accounted for. The inclusion of capacitive effects allows accurate modeling of devices with large numbers of transistor fingers and high frequency application. Third, a specialized nonlinear exponential integrator (EI) method is developed to address the considerably different time scales between electrical and thermal sectors. The EI-based transient solver allows the electrical system to step with much larger time step size than in conventional methods, thus the time step size gap between the electrical and the thermal simulation is largely reduced. Its benefits of scalability, adaptivity and accuracy are also demonstrated in the dissertation. Subjects: Power semiconductors
Author : Gerald Burton Lichtenberger
Publisher :
ISBN 13 :
Total Pages : 126 pages
Book Rating : 4.:/5 (257 download)
Download or read book Computer Aided Thermal Analysis of Semiconductor Devices written by Gerald Burton Lichtenberger and published by . This book was released on 1967 with total page 126 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Robert Anholt
Publisher : Artech House Microwave Library
ISBN 13 :
Total Pages : 338 pages
Book Rating : 4.3/5 (91 download)
Download or read book Electrical and Thermal Characterization of MESFETs, HEMTs, and HBTs written by Robert Anholt and published by Artech House Microwave Library. This book was released on 1995 with total page 338 pages. Available in PDF, EPUB and Kindle. Book excerpt: Encompassing three important technologies, this book explains why III-V transistor device electrical characteristics change with temperature, and develops models of the temperature change for use in integrated circuit design programs. You'll find a wealth of experimental S-equivalent-circuit parameter data on a wide variety of devices that has never before been presented, as well as learn how to measure S-parameters and fit equivalent circuits. Includes 200 equations and 181 illustrations.
