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Author : Viktor Leopolʹdovich Bonch-Bruevich
Publisher :
ISBN 13 :
Total Pages : 154 pages
Book Rating : 4.3/5 (91 download)
Download or read book The Electronic Theory of Heavily Doped Semiconductors written by Viktor Leopolʹdovich Bonch-Bruevich and published by . This book was released on 1966 with total page 154 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : V. I. Fistul
Publisher : Springer Science & Business Media
ISBN 13 : 146848821X
Total Pages : 428 pages
Book Rating : 4.4/5 (684 download)
Download or read book Heavily Doped Semiconductors written by V. I. Fistul and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 428 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recently, there has been a considerable upsurge of interest in heavily doped semiconductors. This interest is due primarily to the expanding range of applications of such. materials. Moreover, the heavy doping of semiconductors produces new effects (the forma tion of impurity aggregates, the appearance of allowed states in the forbidden band, etc J, which are of great interest in solid-state physics. The rapid growth in the number of papers on heavily doped semiconductors makes it difficult to review the results obtained so far. Therefore, many investigations carried out in 1966-7, par ticularly those on AIIIBV semiconductors, are not discussed in the present monograph, which represents the state of the knowledge in 1965. Nevertheless, the author hopes that, in spite of this, the book will be useful. An attempt is made, first, to review investigations of heavily doped semiconductors from a certain viewpoint and, sec ondly, to suggest some ideas (Chap. 5) which may be controversial but which are intended to stimulate further studies of heavily doped semiconductors which can be regarded as a special case of dis ordered systems. The work of American scientists investigating heavily doped semiconductors, in particular the efforts of E. O. Kane, J. 1. Pan kove, R. N. Hall, R. A. Logan, W. G. Spitzer, F. A. Trumbore, and many others, is well known to Soviet investigators. It gives me pleasure to learn that Western readers will now have an - v vi PREFACE portunity to become acquainted with the work done in the USSR.
Author : B.I. Shklovskii
Publisher : Springer Science & Business Media
ISBN 13 : 3662024039
Total Pages : 400 pages
Book Rating : 4.6/5 (62 download)
Download or read book Electronic Properties of Doped Semiconductors written by B.I. Shklovskii and published by Springer Science & Business Media. This book was released on 2013-11-09 with total page 400 pages. Available in PDF, EPUB and Kindle. Book excerpt: First-generation semiconductors could not be properly termed "doped- they were simply very impure. Uncontrolled impurities hindered the discovery of physical laws, baffling researchers and evoking pessimism and derision in advocates of the burgeoning "pure" physical disciplines. The eventual banish ment of the "dirt" heralded a new era in semiconductor physics, an era that had "purity" as its motto. It was this era that yielded the successes of the 1950s and brought about a new technology of "semiconductor electronics". Experiments with pure crystals provided a powerful stimulus to the develop ment of semiconductor theory. New methods and theories were developed and tested: the effective-mass method for complex bands, the theory of impurity states, and the theory of kinetic phenomena. These developments constitute what is now known as semiconductor phys ics. In the last fifteen years, however, there has been a noticeable shift towards impure semiconductors - a shift which came about because it is precisely the impurities that are essential to a number of major semiconductor devices. Technology needs impure semiconductors, which unlike the first-generation items, are termed "doped" rather than "impure" to indicate that the impurity levels can now be controlled to a certain extent.
Author : Gershoni David
Publisher : World Scientific
ISBN 13 : 9814544426
Total Pages : 332 pages
Book Rating : 4.8/5 (145 download)
Download or read book Physics Of Semiconductors, The - Proceedings Of The 24th International Conference (With Cd-rom) written by Gershoni David and published by World Scientific. This book was released on 1999-03-12 with total page 332 pages. Available in PDF, EPUB and Kindle. Book excerpt: The proceedings of this important conference consist of plenary and invited papers published in hard copy and CD-ROM versions. The contributed oral and poster presentations are included in the CD-ROM version only.
Author :
Publisher :
ISBN 13 :
Total Pages : 868 pages
Book Rating : 4.3/5 (91 download)
Download or read book NBS Special Publication written by and published by . This book was released on 1971 with total page 868 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher : Academic Press
ISBN 13 : 0080864368
Total Pages : 425 pages
Book Rating : 4.0/5 (88 download)
Download or read book Semiconductors and Semimetals written by and published by Academic Press. This book was released on 1993-08-10 with total page 425 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors and Semimetals
Author : Charles P. Poole Jr.
Publisher : Academic Press
ISBN 13 : 0080545238
Total Pages : 1658 pages
Book Rating : 4.0/5 (85 download)
Download or read book Encyclopedic Dictionary of Condensed Matter Physics written by Charles P. Poole Jr. and published by Academic Press. This book was released on 2004-03-11 with total page 1658 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume is a translation and revision of the Original Russian version by Baryahktar. It covers all of the main fields involved in Condensed Matter Physics, such as crystallography, electrical properties, fluids, magnetism, material properties, optics, radiation, semiconductors, and superconductivity, as well as highlights of important related subjects such as quantum mechanics, spectroscopy, and statistical mechanics. Both theoretical and experimental aspects of condensed matter are covered in detail. The entries range from very short paragraphs on topics where definitions are needed, such as Bloch's law, clathrate compound, donor, domain, Kondo lattice, mean free path, and Wigner crystal, to long discussions of more general or more comprehensive topics such as antiferromagnetism, crystal lattice dynamics, dislocations, Fermi surface, Josephson effect, luminescence, magnetic films, phase transitions and semiconductors. The main theoretical approaches to Condensed Matter Physics are explained. There are several long tables on, for example, Bravais lattices, characteristics of magnetic materials, units of physical quantities, symmetry groups. The properties of the main elements of the periodic table are given. Numerous entries not covered by standard Solid State Physics texts o Self-similarity o The adiabatic approximation o Bistability Emphasis on materials not discussed in standard texts o Activated carborn o Austenite o Bainite o Calamitics o Carbine o Delat phase o Discotics o Gunier-Preston zones o Heterodesmic structures o Heusler Alloys o Stress and strain deviators o Vicalloy · Each entry is fully cross-referenced to help tracking down all aspects of a topic under investigation Highly illustrated to clarify many concepts
Author : Satoshi Koizumi
Publisher : Woodhead Publishing
ISBN 13 : 0081021844
Total Pages : 468 pages
Book Rating : 4.0/5 (81 download)
Download or read book Power Electronics Device Applications of Diamond Semiconductors written by Satoshi Koizumi and published by Woodhead Publishing. This book was released on 2018-06-29 with total page 468 pages. Available in PDF, EPUB and Kindle. Book excerpt: Power Electronics Device Applications of Diamond Semiconductors presents state-of-the-art research on diamond growth, doping, device processing, theoretical modeling and device performance. The book begins with a comprehensive and close examination of diamond crystal growth from the vapor phase for epitaxial diamond and wafer preparation. It looks at single crystal vapor deposition (CVD) growth sectors and defect control, ultra high purity SC-CVD, SC diamond wafer CVD, heteroepitaxy on Ir/MqO and needle-induced large area growth, also discussing the latest doping and semiconductor characterization methods, fundamental material properties and device physics. The book concludes with a discussion of circuits and applications, featuring the switching behavior of diamond devices and applications, high frequency and high temperature operation, and potential applications of diamond semiconductors for high voltage devices. - Includes contributions from today's most respected researchers who present the latest results for diamond growth, doping, device fabrication, theoretical modeling and device performance - Examines why diamond semiconductors could lead to superior power electronics - Discusses the main challenges to device realization and the best opportunities for the next generation of power electronics
Author :
Publisher : Academic Press
ISBN 13 : 0128030445
Total Pages : 326 pages
Book Rating : 4.1/5 (28 download)
Download or read book Semiconductor Nanowires I: Growth and Theory written by and published by Academic Press. This book was released on 2015-11-26 with total page 326 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor Nanowires: Part A, Number 93 in the Semiconductor and Semimetals series, focuses on semiconductor nanowires. - Contains comments from leading contributors in the field semiconductor nanowires - Provides reviews of the most important recent literature - Presents a broad view, including an examination of semiconductor nanowires - Comprises up to date advancements in the technological development of nanowire devices and systems, and is comprehensive enough to be used as a reference book on nanowires as well as a graduate student text book
Author : Freeman D. Shepherd (Jr.)
Publisher :
ISBN 13 :
Total Pages : 98 pages
Book Rating : 4.3/5 (91 download)
Download or read book A Study of Band Edge Distortion in Heavily Doped Germanium written by Freeman D. Shepherd (Jr.) and published by . This book was released on 1965 with total page 98 pages. Available in PDF, EPUB and Kindle. Book excerpt: Details of the energy band structure of degenerate n-type germanium were determined by analysis of fine structure in the 4.2K volt-ampere characteristic of germanium tunnel diodes. No shift in the relative energy of the conduction band minima was observed. The band edge is found to be exponentially distributed with 1/e energies of the order of 10 MeV. There appears to be an ordering mechanism among the group V impurity atoms used as substrate dopants. (Author).
Author : Gerhard Heller
Publisher : Elsevier
ISBN 13 : 0323141846
Total Pages : 998 pages
Book Rating : 4.3/5 (231 download)
Download or read book Thermophysics of Spacecraft and Planetary Bodies written by Gerhard Heller and published by Elsevier. This book was released on 2012-12-02 with total page 998 pages. Available in PDF, EPUB and Kindle. Book excerpt: Progress in Astronautics and Aeronautics, Volume 20: Thermophysics of Spacecraft and Planetary Bodies: Radiation Properties of Solids and the Electromagnetic Radiation Environment in Space is a collection of technical papers drawn mainly from the American Institute of Aeronautics and Astronautics Thermophysics Specialist Conference, held in New Orleans on April 17-20, 1967. This volume is organized into six part encompassing 45 chapters that offer a selection of the most advanced studies in the dynamic field of thermophysics. Part I deals with radiation properties of solid state materials and the measuring techniques in the laboratory, while Part II describes the thermophysical properties of surfaces used for spacecraft. The papers of Part II also include solid state physics studies of the processes involved in the interaction of UV radiation with solids. Part III discusses the results of thermal flight experiments and on the radiation characteristics of planetary bodies, followed by topics on general radiative properties and the measurements of radiative properties of natural surfaces from satellites in Part IV. Part V contains papers on thermal similitude and on the closely related subject of radiant heat transfer analysis of thermal systems. Lastly, Part VI focuses on the heat transfer within the spacecraft under the conditions of space environment, specifically conductive and radiative transfer. This book is of great value to thermophysicists, space engineers and designers, as well as researchers in the fields of astronautics and aeronautics.
Author : Richard K Ahrenkiel
Publisher : World Scientific
ISBN 13 : 9813277149
Total Pages : 326 pages
Book Rating : 4.8/5 (132 download)
Download or read book Theory And Methods Of Photovoltaic Material Characterization: Optical And Electrical Measurement Techniques written by Richard K Ahrenkiel and published by World Scientific. This book was released on 2019-02-27 with total page 326 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides an extensive review of the theory of transport and recombination properties in semiconductors. The emphasis is placed on electrical and optical techniques. There is a presentation of the latest experimental and theoretical techniques used to analyze minority-carrier lifetime. The relevant hardware and instrumentation are described. The newest techniques of lifetime mapping are presented. The issues are discussed relating to effects that mask carrier lifetime in certain device structures. The discrepancy between photoconductive and photoluminescence measurement results are analyzed.
Author : Joachim Bargon
Publisher : Springer Science & Business Media
ISBN 13 : 1468448471
Total Pages : 367 pages
Book Rating : 4.4/5 (684 download)
Download or read book Methods and Materials in Microelectronic Technology written by Joachim Bargon and published by Springer Science & Business Media. This book was released on 2013-03-09 with total page 367 pages. Available in PDF, EPUB and Kindle. Book excerpt: The papers collected in this volume were presented at the International Symposium on Methods and Materials in Microelectronic Technology. This symposium was sponsored by IBM Germany, and it was held September 29 - October 1, 1982, in Bad Neuenahr, West Germany. The progress of semiconductor and microelectronic technology has become so rapid and the field so sophisticated that it is imperative to exchange the latest insight gained as frequently as it can be accomplished. In addition, it is peculiar for this field that the bulk of the investigations are carried out at industrial research and development laboratories, which makes some of the results less readily accessible. Because of these circumstances, the academic community, which among other things, is supposed to communicate the prog ress in this field to students of different disciplines, finds it rather difficult to stay properly informed. It was the intent of this IBM sponsored symposium to bring together key scientists from academic institutions, primarily from Europe, with principal investigators of the industrial scene. Accordingly, this symposium exposed technologists to scientists and vice versa. Scientific advances often lead directly to technological innovations. In turn, new technologies are often arrived at empirically and, because of that, are initially poorly understood. Scientific inquiry then attempts to probe these processes and phenomena in order to achieve a better understanding. Thus science and technology are intricately interconnected, and it is important that technical exchange between technolo gists and scientists is facilitated, since the problems are typically interdiscipli nary in nature.
Author : Veljko Zlatic
Publisher : Springer
ISBN 13 : 9400749848
Total Pages : 283 pages
Book Rating : 4.4/5 (7 download)
Download or read book New Materials for Thermoelectric Applications: Theory and Experiment written by Veljko Zlatic and published by Springer. This book was released on 2012-10-17 with total page 283 pages. Available in PDF, EPUB and Kindle. Book excerpt: Thermoelectric devices could play an important role in making efficient use of our energy resources but their efficiency would need to be increased for their wide scale application. There is a multidisciplinary search for materials with an enhanced thermoelectric responses for use in such devices. This volume covers the latest ideas and developments in this research field, covering topics ranging from the fabrication and characterization of new materials, particularly those with strong electron correlation, use of nanostructured, layered materials and composites, through to theoretical work to gain a deeper understanding of thermoelectric behavior. It should be a useful guide and stimulus to all working in this very topical field.
Author : Electrochemical Society. Electronics Division
Publisher : The Electrochemical Society
ISBN 13 : 9781566773287
Total Pages : 506 pages
Book Rating : 4.7/5 (732 download)
Download or read book Microelectronics Technology and Devices, SBMICRO 2002 written by Electrochemical Society. Electronics Division and published by The Electrochemical Society. This book was released on 2002 with total page 506 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Jo Nijs
Publisher : CRC Press
ISBN 13 : 9780750302999
Total Pages : 490 pages
Book Rating : 4.3/5 (29 download)
Download or read book Advanced Silicon & Semiconducting Silicon-Alloy Based Materials & Devices written by Jo Nijs and published by CRC Press. This book was released on 1994-01-01 with total page 490 pages. Available in PDF, EPUB and Kindle. Book excerpt: One of the first books to cover advanced silicon-based technologies, Advanced Silicon and Semiconducting Silicon Alloy-Based Materials and Devices presents important directions for research into silicon, its alloy-based semiconducting devices, and its development in commercial applications. The first section deals with single/mono crystalline silicon, focusing on the effects of heavy doping; the structure and electronic properties of defects and their impact on devices; the MBE of silicon, silicon alloys, and metals; CVD techniques for silicon and silicon germanium; the material properties of silicon germanium strained layers; silicon germanium heterojunction bipolar applications; FETs, IR detectors, and resonant tunneling devices in silicon, silicon germanium, and d-doped silicon; and the fascinating properties of crystalline silicon carbide and its applications. The second section explores polycrystalline silicon. It examines large grain polysilicon substrates for solar cells; the properties, analysis, and modeling of polysilicon TFTs; the technology of polysilicon TFTs in LCD displays; and the use of polycrystalline silicon and its alloys in VLSI applications. With contributors from leading academic and industrial research centers, this book provides wide coverage of fabrication techniques, material properties, and device applications.
Author : Y. Nagaoka
Publisher : Springer Science & Business Media
ISBN 13 : 3642818412
Total Pages : 236 pages
Book Rating : 4.6/5 (428 download)
Download or read book Anderson Localization written by Y. Nagaoka and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 236 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains the proceedings of the Fourth Taniguchi International Symposium on the Theory of Condensed Matter, which was held at Senkari Semi nar House of Kwansei Gakuin Universi~y in Sanda-shi, Japan, during the period of 3-8 November 1981. The topic of the symposium was "Anderson rocalization," one of the most fundamental problems in condensed-matter physics. Since Anderson's classic paper was published in 1958, much theoretical and experimental effort has been performed to study the problem of electron localization in a random potential. Quite recently, Abrahams, Anderson, Licciardello, and Ramakrishnan proposed a scaling theory of the Anderson lo calization which made it possible to perform microscopic investigations. Rapid progress has followed and we are now getting a coherent picture of the behavior of electrons in disordered systems. When we organized the symposium, we asked Dr. Anderson to participate in it and to give a review talk on theoretical aspects of the problem. Though he kindly accepted our invitation, he could not come due to a sudden illness. A review talk was given by Professor Thouless who kindly accepted our request to take the place of Dr. Anderson. Fortunately, Dr. Anderson has since re covered from his illness.
