A Study of Gamma-radiation-induced Effects in Gallium Nitride Based Devices

Download A Study of Gamma-radiation-induced Effects in Gallium Nitride Based Devices PDF Online Free

Author :
Publisher :
ISBN 13 :
Total Pages : 259 pages
Book Rating : 4.:/5 (271 download)

DOWNLOAD NOW!


Book Synopsis A Study of Gamma-radiation-induced Effects in Gallium Nitride Based Devices by : Gilberto A. Umana-Membreno

Download or read book A Study of Gamma-radiation-induced Effects in Gallium Nitride Based Devices written by Gilberto A. Umana-Membreno and published by . This book was released on 2006 with total page 259 pages. Available in PDF, EPUB and Kindle. Book excerpt: [Truncated abstract] Over the past decade, the group III-nitride semiconducting compounds (GaN, AlN, InN, and their alloys) have attracted tremendous research efforts due to their unique electronic and optical properties. Their low thermal carrier generation rates and large breakdown fields make them attractive for the development of robust electronic devices capable of reliable operation in extreme conditions, i.e. at high power/voltage levels, high temperatures and in radiation environments. For device applications in radiation environments, such as space electronics, GaN-based devices are expected to manifest superior radiation hardness and reliability without the need for cumber- some and expensive cooling systems and/or radiation shielding. The principle aim of this Thesis is to ascertain the level of susceptibility of current GaN-based elec- tron devices to radiation-induced degradation, by undertaking a detailed study of 60Co gamma-irradiation-induced defects and defect-related effects on the electrical characteristics of n-type GaN-based materials and devices . . . While the irradiation-induced effects on device threshold voltage could be regarded as relatively benign (taking into account that the irradiation levels employed in this study are equivalent to more than 60 years exposure at the average ionising dose rate levels present in space missions), the observed device instabilities and the degradation of gate current characteristics are deleterious effects which will have a significant impact on the performance of AlGaN/GaN HEMTs operating in radiation environments at low temperatures, a combination of conditions which are found in spaceborne electronic systems.

Effect of Gamma Irradiation on GaN Devices

Download Effect of Gamma Irradiation on GaN Devices PDF Online Free

Author :
Publisher :
ISBN 13 :
Total Pages : 0 pages
Book Rating : 4.:/5 (144 download)

DOWNLOAD NOW!


Book Synopsis Effect of Gamma Irradiation on GaN Devices by : Nate Martin

Download or read book Effect of Gamma Irradiation on GaN Devices written by Nate Martin and published by . This book was released on 2024 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Throughout space, nuclear, and defense applications, electronics are subjected to radiation harsh environments. Gallium Nitride (GaN) is a promising material for such harsh environment applications because of its strong bonding, in addition to its favorable material properties for making electronic devices: wide bandgap, and high electron mobility. To qualify GaN for harsh environment applications, testing is required, including the need to assess GaN's hardness to total ionizing dose (TID) effects such as those from gamma radiation. One of the reasons for studying TID effects in GaN is that gamma radiation is present in many manmade radiation environments, and an additional reason for studying TID effects is that the secondary electrons from gamma radiation are a good way to simulate radiation damage from electrons accumulated during space missions, particularly in the Van Allen Belts. Throughout many of the studies on TID effects, results are highly varied, owing to variations in gate structure, radiation bias conditions, and material growth techniques, each of which are not always fully detailed in some reports. Because of the variation in present reports on TID effects in GaN, additional research into TID effects of GaN is needed before it can be confidently used in radiation-harsh environments. A comprehensive study of gamma radiation effects on commercial GaN devices is proposed in this work. Commercial devices from several manufacturers: an RF device, a pGaN/Schottky gate power device, and a p-GaN/Ohmic gate power device, each representative of their class are electrically characterized before, during, and after exposure to doses of gamma radiation from a Cobalt 60 (60Co) source under varying bias conditions. Transistor output and transfer characteristics are collected as well as drain and gate leakage current, dynamic on resistance, capacitance between drain and source (Cds), and between gate and source (Cgs), to comprehensively assess any degradation in the devices from an electrical standpoint. RF devices iv showed a slight negative threshold voltage shift post-irradiation under all bias conditions and an increase in gate and drain current during irradiation. P-GaN/Schottky gate power devices showed an increase in gate leakage in both on- and off-state post-irradiation and an increase in drain current during irradiation as well as a linearly increasing in-situ gate current with dose in offstate. p-GaN/Ohmic gate power devices showed no significant change. Findings are further explored by simulations, using several potential radiation models. Simulation results did not exactly match experimental findings, but they provide a first step in understanding more about the radiation response of these devices.

Radiation Tolerant Gallium Nitride Electronics

Download Radiation Tolerant Gallium Nitride Electronics PDF Online Free

Author :
Publisher :
ISBN 13 :
Total Pages : 0 pages
Book Rating : 4.:/5 (14 download)

DOWNLOAD NOW!


Book Synopsis Radiation Tolerant Gallium Nitride Electronics by : Adithya Balaji

Download or read book Radiation Tolerant Gallium Nitride Electronics written by Adithya Balaji and published by . This book was released on 2022 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium Nitride (GaN) devices are gaining widespread adoption in high performance power and RF applications. Recently, GaN has gained a lot of attention for its high tolerance to extreme environments. Due to its high displacement energy and bond strength, GaN has high intrinsic radiation tolerance. This work presents a radiation tolerant GaN monolithic technology to integrate digital circuits using AlGaN/GaN depletion mode and Gate Injection Transistor (GIT) based enhancement mode HEMTs. Using depletion load logic, logic inverters and universal gates were implemented and fabricated. The type of radiation damage on GaN is dependent on the type of radiation and dose. This digital logic technology proved feasible in low dose gamma radiation environments with no significant degradation in electrical performance. AlGaN/GaN HEMTs have shown high degradation after suffering displacement damage. This work proposes highly scaled FinFET structures to architect these devices to be less susceptible to radiation induced buffer damage. TCAD simulations of fin structures showed little shift in 2DEG concentration compared to similar planar structures. An E-Beam lithography process was also developed to fabricate AlGaN/GaN FinFETs.

Proton Irradiation Effects on Gallium Nitride-based Devices

Download Proton Irradiation Effects on Gallium Nitride-based Devices PDF Online Free

Author :
Publisher :
ISBN 13 :
Total Pages : 170 pages
Book Rating : 4.:/5 (76 download)

DOWNLOAD NOW!


Book Synopsis Proton Irradiation Effects on Gallium Nitride-based Devices by : Aditya P. Karmarkar

Download or read book Proton Irradiation Effects on Gallium Nitride-based Devices written by Aditya P. Karmarkar and published by . This book was released on 2005 with total page 170 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Electron Paramagnetic Resonance Spectroscopy and Hall Effect Studies of the Effects of Low Energy Electron Irradiation on Gallium Nitride

Download Electron Paramagnetic Resonance Spectroscopy and Hall Effect Studies of the Effects of Low Energy Electron Irradiation on Gallium Nitride PDF Online Free

Author :
Publisher :
ISBN 13 : 9781423514527
Total Pages : 186 pages
Book Rating : 4.5/5 (145 download)

DOWNLOAD NOW!


Book Synopsis Electron Paramagnetic Resonance Spectroscopy and Hall Effect Studies of the Effects of Low Energy Electron Irradiation on Gallium Nitride by : Kevin D. Greene

Download or read book Electron Paramagnetic Resonance Spectroscopy and Hall Effect Studies of the Effects of Low Energy Electron Irradiation on Gallium Nitride written by Kevin D. Greene and published by . This book was released on 2003-09-01 with total page 186 pages. Available in PDF, EPUB and Kindle. Book excerpt: The nature of native donors in GaN, types and interactions of radiation-induced defects, and damage creation coefficients for 1.0 MeV electron irradiation have been ascertained by the concerted application of electron paramagnetic resonance spectroscopy and Hall effect measurements to virgin and electron-irradiated GaN epilayers. Samples produced via molecular beam epitaxy and hydride vapor phase epitaxy, both silicon doped and nominally undoped, were subjected to Van de Graff generator produced monoenergtic electron beams with total fluences of 10Æ16- 10Æ18 electrons/cmÆ2. Nitrogen vacancies are rejected as a possible cause of n-type conductivity in nominally undoped GaN due to the decrease of shallow donor populations following irradiation. Damage constants for a donor-defect complex formation or defect compensation are found to be approximately 0.15 cmÆ-1. Identification by resolved hyperfine splitting is accomplished for radiation-induced Ga interstitial complexes.

Spectroscopic Characterization of Radiation-induced Defects in Gallium Nitride

Download Spectroscopic Characterization of Radiation-induced Defects in Gallium Nitride PDF Online Free

Author :
Publisher :
ISBN 13 :
Total Pages : 322 pages
Book Rating : 4.:/5 (35 download)

DOWNLOAD NOW!


Book Synopsis Spectroscopic Characterization of Radiation-induced Defects in Gallium Nitride by : Qing Yang (Ph.D.)

Download or read book Spectroscopic Characterization of Radiation-induced Defects in Gallium Nitride written by Qing Yang (Ph.D.) and published by . This book was released on 2005 with total page 322 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Gallium Nitride (GaN)

Download Gallium Nitride (GaN) PDF Online Free

Author :
Publisher : CRC Press
ISBN 13 : 1482220040
Total Pages : 372 pages
Book Rating : 4.4/5 (822 download)

DOWNLOAD NOW!


Book Synopsis Gallium Nitride (GaN) by : Farid Medjdoub

Download or read book Gallium Nitride (GaN) written by Farid Medjdoub and published by CRC Press. This book was released on 2017-12-19 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt: Addresses a Growing Need for High-Power and High-Frequency Transistors Gallium Nitride (GaN): Physics, Devices, and Technology offers a balanced perspective on the state of the art in gallium nitride technology. A semiconductor commonly used in bright light-emitting diodes, GaN can serve as a great alternative to existing devices used in microelectronics. It has a wide band gap and high electron mobility that gives it special properties for applications in optoelectronic, high-power, and high-frequency devices, and because of its high off-state breakdown strength combined with excellent on-state channel conductivity, GaN is an ideal candidate for switching power transistors. Explores Recent Progress in High-Frequency GaN Technology Written by a panel of academic and industry experts from around the globe, this book reviews the advantages of GaN-based material systems suitable for high-frequency, high-power applications. It provides an overview of the semiconductor environment, outlines the fundamental device physics of GaN, and describes GaN materials and device structures that are needed for the next stage of microelectronics and optoelectronics. The book details the development of radio frequency (RF) semiconductor devices and circuits, considers the current challenges that the industry now faces, and examines future trends. In addition, the authors: Propose a design in which multiple LED stacks can be connected in a series using interband tunnel junction (TJ) interconnects Examine GaN technology while in its early stages of high-volume deployment in commercial and military products Consider the potential use of both sunlight and hydrogen as promising and prominent energy sources for this technology Introduce two unique methods, PEC oxidation and vapor cooling condensation methods, for the deposition of high-quality oxide layers A single-source reference for students and professionals, Gallium Nitride (GaN): Physics, Devices, and Technology provides an overall assessment of the semiconductor environment, discusses the potential use of GaN-based technology for RF semiconductor devices, and highlights the current and emerging applications of GaN.

Some Effects of Gamma Radiation on Silicon and Silicon Devices

Download Some Effects of Gamma Radiation on Silicon and Silicon Devices PDF Online Free

Author :
Publisher :
ISBN 13 :
Total Pages : 136 pages
Book Rating : 4.F/5 ( download)

DOWNLOAD NOW!


Book Synopsis Some Effects of Gamma Radiation on Silicon and Silicon Devices by : DeWitt Landis

Download or read book Some Effects of Gamma Radiation on Silicon and Silicon Devices written by DeWitt Landis and published by . This book was released on 1967 with total page 136 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Proton Radiation and Thermal Stabilty [sic] of Gallium Nitride and Gallium Nitride Devices

Download Proton Radiation and Thermal Stabilty [sic] of Gallium Nitride and Gallium Nitride Devices PDF Online Free

Author :
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (444 download)

DOWNLOAD NOW!


Book Synopsis Proton Radiation and Thermal Stabilty [sic] of Gallium Nitride and Gallium Nitride Devices by : Kimberly K. Allums

Download or read book Proton Radiation and Thermal Stabilty [sic] of Gallium Nitride and Gallium Nitride Devices written by Kimberly K. Allums and published by . This book was released on 2006 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: ABSTRACT: In today's industry one can see a constant challenge to exceed the limits of yesterday's devices. For the last three decades, the III--V nitride semiconductors have been viewed as highly promising for semiconductor device applications. The primary focus of III--V nitrides, thus far, has been centered on light emitting diodes (LEDs), injection lasers for digital data reading and storage applications, and ultra violet photodetectors. Yet, another application is high-power electronic devices for space-borne communications systems. It is expected that GaN-based devices will be more resistant to radiation damage often encountered in space environments, though verification of this is just now being undertaken. In particular, no information is yet available about the sensitivity to radiation of devices using dielectrics such as MOSFETs. Similarly, very limited data has been reported on the effects of high-energy protons on GaN based devices of any type. For this reason the research presented in this dissertation was undertaken to study the radiation and thermal stability of gallium nitride materials and gallium nitride semiconductor diodes, with and without novel gate dielectrics such as, scandium oxide (Sc2O3) and magnesium oxide (MgO) and the ternary mix of magnesium calcium oxide (MgCaO). It was found that though environmental degradation could be a problem for MgO dielectrics, the radiation exposure itself did not produce significant damage in either the Sc2O3, MgO or MgCaO dielectrics. Much of the minimal damage occurred in the GaN as shown by photoluminescence spectroscopy (PL).

The Effect of Radiation on the Electrical Properties of Aluminum Gallium Nitride/Gallium Nitride Heterostructures

Download The Effect of Radiation on the Electrical Properties of Aluminum Gallium Nitride/Gallium Nitride Heterostructures PDF Online Free

Author :
Publisher :
ISBN 13 :
Total Pages : 176 pages
Book Rating : 4.:/5 (318 download)

DOWNLOAD NOW!


Book Synopsis The Effect of Radiation on the Electrical Properties of Aluminum Gallium Nitride/Gallium Nitride Heterostructures by : John W. McClory

Download or read book The Effect of Radiation on the Electrical Properties of Aluminum Gallium Nitride/Gallium Nitride Heterostructures written by John W. McClory and published by . This book was released on 2008 with total page 176 pages. Available in PDF, EPUB and Kindle. Book excerpt: AlGaN/GaN Heterojunction Field Effect Transistors (HFETs) were irradiated at low temperature and the temperature dependent changes to drain current, gate current, capacitance, and transconductance were measured. The results were compared to the charge control model of the drain current and trap-assisted tunneling model of the gate current to determine the source of the radiation-induced changes. AlGaN/GaN HFETs demonstrated threshold voltage shifts and drain current changes after irradiation. After electron and neutron irradiation applied at ~80 K, measurement of the drain current at this temperature showed an increase that saturated after 10^13 electrons/cm^2 or 10^10 neutrons/cm^2 due to positive charge build-up in the AlGaN layer. Measurement at room temperature after low-temperature irradiation showed a decrease in drain current due to the build up of charged defects along the AlGaN-GaN interface that decrease the mobility in the 2DEG and hence decrease the current. Gate leakage currents increased after low temperature irradiation and the increase was persistent after room temperature annealing. The increased leakage current was attributed to trap-assisted tunneling after application of the trap-assisted tunneling model. Comparison of the model to post-irradiation vs. pre-irradiation data showed that the dominant parameter change causing increased gate current was an increase in trap concentration.

Power GaN Devices

Download Power GaN Devices PDF Online Free

Author :
Publisher : Springer
ISBN 13 : 3319431994
Total Pages : 383 pages
Book Rating : 4.3/5 (194 download)

DOWNLOAD NOW!


Book Synopsis Power GaN Devices by : Matteo Meneghini

Download or read book Power GaN Devices written by Matteo Meneghini and published by Springer. This book was released on 2016-09-08 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.

Scientific and Technical Aerospace Reports

Download Scientific and Technical Aerospace Reports PDF Online Free

Author :
Publisher :
ISBN 13 :
Total Pages : 836 pages
Book Rating : 4.:/5 (31 download)

DOWNLOAD NOW!


Book Synopsis Scientific and Technical Aerospace Reports by :

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1994 with total page 836 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Technology for Advanced Focal Plane Arrays of HgCdTe and AlGaN

Download Technology for Advanced Focal Plane Arrays of HgCdTe and AlGaN PDF Online Free

Author :
Publisher : Springer
ISBN 13 : 3662527189
Total Pages : 698 pages
Book Rating : 4.6/5 (625 download)

DOWNLOAD NOW!


Book Synopsis Technology for Advanced Focal Plane Arrays of HgCdTe and AlGaN by : Li He

Download or read book Technology for Advanced Focal Plane Arrays of HgCdTe and AlGaN written by Li He and published by Springer. This book was released on 2016-07-15 with total page 698 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book introduces the basic framework of advanced focal plane technology based on the third-generation infrared focal plane concept. The essential concept, research advances, and future trends in advanced sensor arrays are comprehensively reviewed. Moreover, the book summarizes recent research advances in HgCdTe/AlGaN detectors for the infrared/ultraviolet waveband, with a particular focus on the numerical method of detector design, material epitaxial growth and processing, as well as Complementary Metal-Oxide-Semiconductor Transistor readout circuits. The book offers a unique resource for all graduate students and researchers interested in the technologies of focal plane arrays or electro-optical imaging sensors.

III-Nitride Based Semiconductor Electronics and Optical Devices and Thirty-Fourth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXXIV)

Download III-Nitride Based Semiconductor Electronics and Optical Devices and Thirty-Fourth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXXIV) PDF Online Free

Author :
Publisher : The Electrochemical Society
ISBN 13 : 9781566773072
Total Pages : 336 pages
Book Rating : 4.7/5 (73 download)

DOWNLOAD NOW!


Book Synopsis III-Nitride Based Semiconductor Electronics and Optical Devices and Thirty-Fourth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXXIV) by : F. Ren

Download or read book III-Nitride Based Semiconductor Electronics and Optical Devices and Thirty-Fourth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXXIV) written by F. Ren and published by The Electrochemical Society. This book was released on 2001 with total page 336 pages. Available in PDF, EPUB and Kindle. Book excerpt:

HEMT Technology and Applications

Download HEMT Technology and Applications PDF Online Free

Author :
Publisher : Springer Nature
ISBN 13 : 9811921652
Total Pages : 246 pages
Book Rating : 4.8/5 (119 download)

DOWNLOAD NOW!


Book Synopsis HEMT Technology and Applications by : Trupti Ranjan Lenka

Download or read book HEMT Technology and Applications written by Trupti Ranjan Lenka and published by Springer Nature. This book was released on 2022-06-23 with total page 246 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers two broad domains: state-of-the-art research in GaN HEMT and Ga2O3 HEMT. Each technology covers materials system, band engineering, modeling and simulations, fabrication techniques, and emerging applications. The book presents basic operation principles of HEMT, types of HEMT structures, and semiconductor device physics to understand the device behavior. The book presents numerical modeling of the device and TCAD simulations for high-frequency and high-power applications. The chapters include device characteristics of HEMT including 2DEG density, Id-Vgs, Id-Vds, transconductance, linearity, and C-V. The book emphasizes the state-of-the-art fabrication techniques of HEMT and circuit design for various applications in low noise amplifier, oscillator, power electronics, and biosensor applications. The book focuses on HEMT applications to meet the ever-increasing demands of the industry, innovation in terms of materials, design, modeling, simulation, processes, and circuits. The book will be primarily helpful to undergraduate/postgraduate, researchers, and practitioners in their research.

Dissertation Abstracts International

Download Dissertation Abstracts International PDF Online Free

Author :
Publisher :
ISBN 13 :
Total Pages : 906 pages
Book Rating : 4.F/5 ( download)

DOWNLOAD NOW!


Book Synopsis Dissertation Abstracts International by :

Download or read book Dissertation Abstracts International written by and published by . This book was released on 2008 with total page 906 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Gallium-nitride-based Field-effect Transitors

Download Gallium-nitride-based Field-effect Transitors PDF Online Free

Author :
Publisher :
ISBN 13 :
Total Pages : 312 pages
Book Rating : 4.:/5 (84 download)

DOWNLOAD NOW!


Book Synopsis Gallium-nitride-based Field-effect Transitors by : Brendan Martin Gaffey

Download or read book Gallium-nitride-based Field-effect Transitors written by Brendan Martin Gaffey and published by . This book was released on 2001 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt: