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A Photoluminescence Investigation Of Indium Phosphide
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Book Synopsis A photoluminescence investigation of indium phosphide by : Christopher D. Adams
Download or read book A photoluminescence investigation of indium phosphide written by Christopher D. Adams and published by . This book was released on 1983 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis A Photoluminescence Study of Heavily Doped Indium Phosphide by : Robert Michael Sieg
Download or read book A Photoluminescence Study of Heavily Doped Indium Phosphide written by Robert Michael Sieg and published by . This book was released on 1994 with total page 420 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Photoluminescence studies in indium phosphide by : Steven David Lester
Download or read book Photoluminescence studies in indium phosphide written by Steven David Lester and published by . This book was released on 1987 with total page 196 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis NMR and Photoluminescence Studies of Indium Phosphide Nanocrystals by : John A. Skinta
Download or read book NMR and Photoluminescence Studies of Indium Phosphide Nanocrystals written by John A. Skinta and published by . This book was released on 1996 with total page 64 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Photoluminescence of Undoped, Semi-Insulating, and Mg-Implanted Indium Phosphide by : Gernot Siefried Pomrenke
Download or read book Photoluminescence of Undoped, Semi-Insulating, and Mg-Implanted Indium Phosphide written by Gernot Siefried Pomrenke and published by . This book was released on 1979 with total page 198 pages. Available in PDF, EPUB and Kindle. Book excerpt: A photoluminescent investigation was made of undoped, semi-insulating, unannealed and annealed Mg-ion implanted, indium phosphide which originated from Czochralski, vapor, and liquid grown crystals. Ion implantation was performed at fluences of 5 x 10 to the 12th power ions/sq cm to 1 x 10 to the 15 power ions/sq cm with an energy of 120 keV at room temperature, followed by annealing at 700 degrees C and 750 degrees C for fifteen minutes using a Si3N4 encapsulant. Luminescence of undoped InP was studied with respect to temperature, emission intensity, and excitation intensity; results included the possible identification of the following radiative recombinations: free exciton, bound exciton, donor-to-valence, and donor-to-acceptor. Broad, low intensity peaks were identified at 1.0541 eV, 0.9374 eV, and 1.15 eV. Spectral results of the less intense semi-insulating InP:Fe were identical to undoped InP aside from a 1.38 eV high energy shoulder and low intensity peak at 1.31 eV. Photoluminescence of unannealed, implanted samples resulted in a 0.9643 eV peak with a long, low energy shoulder. Emission intensity and peak energy of annealed, implanted samples were studied as a function of dosage and anneal temperature. The post-implantation annealing at 750 degree C was sufficient to obtain efficient luminescence. Analysis of the 750 degree C annealed samples indicates that the peak due to recombinations involving implanted Mg acceptors is located between 1.384 eV at 50 degrees K. Superior spectral results from VPE InP places the Mg peak position at 1.3801 eV.
Book Synopsis Photoluminescence studies of processing-induced defects in indium phosphide and gallium arsenide by : Tae Seung Kim
Download or read book Photoluminescence studies of processing-induced defects in indium phosphide and gallium arsenide written by Tae Seung Kim and published by . This book was released on 1987 with total page 192 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Studies of Iron Acceptors in Indium Phosphide by Photoconductivity and Photoluminescence Techniques by : 伍寶洪
Download or read book Studies of Iron Acceptors in Indium Phosphide by Photoconductivity and Photoluminescence Techniques written by 伍寶洪 and published by Open Dissertation Press. This book was released on 2017-01-27 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation, "Studies of Iron Acceptors in Indium Phosphide by Photoconductivity and Photoluminescence Techniques" by 伍寶洪, Po-hung, Ng, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. DOI: 10.5353/th_b3123195 Subjects: Indium phosphide Semiconductors - Impurity transition Photoconductivity Photoluminescence
Book Synopsis Studies of Iron Acceptors in Indium Phosphide by Photoconductivity and Photoluminescence Techniques by : Po-hung Ng
Download or read book Studies of Iron Acceptors in Indium Phosphide by Photoconductivity and Photoluminescence Techniques written by Po-hung Ng and published by . This book was released on 1990 with total page 404 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Optically Detected Magnetic Resonance Investigation of Low Temperature Indium Phosphide by : Kishore Venkata Seendripu
Download or read book Optically Detected Magnetic Resonance Investigation of Low Temperature Indium Phosphide written by Kishore Venkata Seendripu and published by . This book was released on 1993 with total page 170 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Time Resolved Photoluminescence of Ytterbium in Indium Phosphide by : Thad F. Bumgarner
Download or read book Time Resolved Photoluminescence of Ytterbium in Indium Phosphide written by Thad F. Bumgarner and published by . This book was released on 1988 with total page 117 pages. Available in PDF, EPUB and Kindle. Book excerpt: Time resolved photoluminescence of ytterbium (Yb) implanted in indium phosphide (Inp) was the primary emphasis of this research. The decay lifetimes of the 1002 nm Yb emission were investigated as a function of temperature. Initial attempts were made to investigate as a function of temperature. Initial attempts were made to investigate aluminum gallium arsenide (AlGaAs) implanted with ytterbium. Theses. (mjm).
Book Synopsis Non-Epitaxial Thin-Film Indium Phosphide Photovoltaics by : Maxwell S. Zheng
Download or read book Non-Epitaxial Thin-Film Indium Phosphide Photovoltaics written by Maxwell S. Zheng and published by . This book was released on 2015 with total page 82 pages. Available in PDF, EPUB and Kindle. Book excerpt: In recent years, the photovoltaic market has grown significantly as module prices have continued to come down. Continued growth of the field requires higher efficiency modules at lower manufacturing costs. In particular, higher efficiencies reduce the area needed for a given power output, thus reducing the downstream balance of systems costs that scale with area such as mounting frames, installation, and soft costs. Cells and modules made from III-V materials have the highest demonstrated efficiencies to date but are not yet at the cost level of other thin film technologies, which has limited their large-scale deployment. There is a need for new materials growth, processing and fabrication techniques to address this major shortcoming of III-V semiconductors. Chapters 2 and 3 explore growth of InP on non-epitaxial Mo substrates by MOCVD and CSS, respectively. The results from these studies demonstrate that InP optoelectronic quality is maintained even by growth on non-epitaxial metal substrates. Structural characterization by SEM and XRD show stoichiometric InP can be grown in complete thin films on Mo. Photoluminescence measurements show peak energies and widths to be similar to those of reference wafers of similar doping concentrations. In chapter 4 the TF-VLS growth technique is introduced and cells fabricated from InP produced by this technique are characterized. The TF-VLS method results in lateral grain sizes of>500 æm and exhibits superior optoelectronic quality. First generation devices using a n-TiO2 window layer along with p-type TF-VLS grown InP have reached ~12.1% power conversion efficiency under 1 sun illumination with VOC of 692 mV, JSC of 26.9 mA/cm2, and FF of 65%. The cells are fabricated using all non-epitaxial processing. Optical measurements show the InP in these cells have the potential to support a higher VOC of ~795 mV, which can be achieved by improved device design. Chapter 5 describes a cost analysis of a manufacturing process using an InP cell as the active layer in a monolithically integrated module. Importantly, TF-VLS growth avoids the hobbles of traditional growth: the epitaxial wafer substrate, low utilization efficiency of expensive metalorganic precursors, and high capital depreciation costs due to low throughput. Production costs are projected to be $0.76/W(DC) for the benchmark case of 12% efficient modules and would decrease to $0.40/W(DC) for the long-term potential case of 24% efficient modules.
Book Synopsis Photoluminescence of Indium Phosphide and Its Dependence on Potential Potential at Electrodes in Aqueous Electrolytes by : Enda Morley
Download or read book Photoluminescence of Indium Phosphide and Its Dependence on Potential Potential at Electrodes in Aqueous Electrolytes written by Enda Morley and published by . This book was released on 2002 with total page 272 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Properties, Processing and Applications of Indium Phosphide by : T. P. Pearsall
Download or read book Properties, Processing and Applications of Indium Phosphide written by T. P. Pearsall and published by Inst of Engineering & Technology. This book was released on 2000-01 with total page 279 pages. Available in PDF, EPUB and Kindle. Book excerpt: Annotation This collection of 49 papers identifies the significant advances and distills the current knowledge from the literature which has been published on indium phosphate (InP) in the last ten years. The major areas of discussion are the importance on InP properties in devices; mechanical, thermal, piezoelectric and electro-optic properties; electronic transport properties; band structure; optical properties; defects, deep levels and their detection; and processing technologies. Topics include InP-based alloys as optical amplifiers and lasers, electron and hole mobilities in InP, conduction band and valance band offsets at various InP/semiconductor interfaces, defect energy levels in irradiated or implanted InP, and etching of InP. Some of the material is reprinted from published in 1991. Distributed by INSPEC. Annotation c. Book News, Inc., Portland, OR (booknews.com)
Book Synopsis International Conference on Indium Phosphide and Related Materials by :
Download or read book International Conference on Indium Phosphide and Related Materials written by and published by . This book was released on 1997 with total page 700 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Scientific and Technical Aerospace Reports by :
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 702 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Properties of Indium Phosphide written by and published by Institution of Electrical Engineers. This book was released on 1991 with total page 528 pages. Available in PDF, EPUB and Kindle. Book excerpt: Invaluble to those studying or exploiting Indium Phosphide, which can provide tunable light sources at wavelengths which undergo minimum attenuation in fiber optic cables.
Book Synopsis Seventh International Conference on Indium Phosphide and Related Materials by :
Download or read book Seventh International Conference on Indium Phosphide and Related Materials written by and published by . This book was released on 1995 with total page 892 pages. Available in PDF, EPUB and Kindle. Book excerpt: