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2016 28th International Symposium On Power Semiconductor Devices And Ics Ispsd
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Book Synopsis 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) by : IEEE Staff
Download or read book 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) written by IEEE Staff and published by . This book was released on 2016-06-12 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: ISPSD is the premier forum for technical discussion in all areas of power semiconductor devices and power integrated circuits It covers the following topics Devices Device Physics, Device Design, High Frequency Devices, High Power Devices, Smart Power Devices, Safe Operating Area, Reliability, ESD Processes Process Integration, Lifetime Control, Passivation, Crystal Growth, III V (hetero) epitaxial growth Modeling Simulation Device and Circuit Simulation, Layout, Verification Tools Materials Si, GaAs, SiC, GaN, Diamond Power ICs Isolation Techniques, SOI, Circuit Design, Device Technology, Energy Capability and SOA, Reliability, ESD, Power SoC, Monolithic vs Hybrid Packaging Novel Packaging Concepts, Power SiP, Stress and Thermal Analysis, Thermal Management Applications Hybrid Vehicles, Power Supplies, Computer and Telecom Power, Motor Drives, Utility
Book Synopsis Wide Bandgap Power Semiconductor Packaging by : Katsuaki Suganuma
Download or read book Wide Bandgap Power Semiconductor Packaging written by Katsuaki Suganuma and published by Woodhead Publishing. This book was released on 2018-05-28 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt: Wide Bandgap Power Semiconductor Packaging: Materials, Components, and Reliability addresses the key challenges that WBG power semiconductors face during integration, including heat resistance, heat dissipation and thermal stress, noise reduction at high frequency and discrete components, and challenges in interfacing, metallization, plating, bonding and wiring. Experts on the topic present the latest research on materials, components and methods of reliability and evaluation for WBG power semiconductors and suggest solutions to pave the way for integration. As wide bandgap (WBG) power semiconductors, SiC and GaN, are the latest promising electric conversion devices because of their excellent features, such as high breakdown voltage, high frequency capability, and high heat-resistance beyond 200 C, this book is a timely resource on the topic. - Examines the key challenges of wide bandgap power semiconductor packaging at various levels, including materials, components and device performance - Provides the latest research on potential solutions, with an eye towards the end goal of system integration - Discusses key problems, such as thermal management, noise reduction, challenges in interconnects and substrates
Book Synopsis Power Semiconductor Devices and ICs (ISPSD), 2000 by : IEEE Electron Devices Society
Download or read book Power Semiconductor Devices and ICs (ISPSD), 2000 written by IEEE Electron Devices Society and published by IEEE Standards Office. This book was released on 2000 with total page 350 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Design of Power Management Integrated Circuits by : Bernhard Wicht
Download or read book Design of Power Management Integrated Circuits written by Bernhard Wicht and published by John Wiley & Sons. This book was released on 2024-05-14 with total page 484 pages. Available in PDF, EPUB and Kindle. Book excerpt: Design of Power Management Integrated Circuits Comprehensive resource on power management ICs affording new levels of functionality and applications with cost reduction in various fields Design of Power Management Integrated Circuits is a comprehensive reference for power management IC design, covering the circuit design of main power management circuits like linear and switched-mode voltage regulators, along with sub-circuits such as power switches, gate drivers and their supply, level shifters, the error amplifier, current sensing, and control loop design. Circuits for protection and diagnostics, as well as aspects of the physical design like lateral and vertical power delivery, pin-out, floor planning, grounding/supply guidelines, and packaging, are also addressed. A full chapter is dedicated to the design of integrated passives. The text illustrates the application of power management integrated circuits (PMIC) to growth areas like computing, the Internet of Things, mobility, and renewable energy. Includes numerous real-world examples, case studies, and exercises illustrating key design concepts and techniques. Offering a unique insight into this rapidly evolving technology through the author’s experience developing PMICs in both the industrial and academic environment, Design of Power Management Integrated Circuits includes information on: Capacitive, inductive and hybrid DC-DC converters and their essential circuit blocks, covering error amplifiers, comparators, and ramp generators Sensing, protection, and diagnostics, covering thermal protection, inductive loads and clamping structures, under-voltage, reference and power-on reset generation Integrated MOS, MOM and MIM capacitors, integrated inductors Control loop design and PWM generation ensuring stability and fast transient response; subharmonic oscillations in current mode control (analysis and circuit design for slope compensation) DC behavior and DC-related circuit design, covering power efficiency, line and load regulation, error amplifier, dropout, and power transistor sizing Commonly used level shifters (including sizing rules) and cascaded (tapered) driver sizing and optimization guidelines Optimizing the physical design considering packaging, floor planning, EMI, pinout, PCB design and thermal design Design of Power Management Integrated Circuits is an essential resource on the subject for circuit designers/IC designers, system engineers, and application engineers, along with advanced undergraduate students and graduate students in related programs of study.
Book Synopsis Power Electronics in Renewable Energy Systems and Smart Grid by : Bimal K. Bose
Download or read book Power Electronics in Renewable Energy Systems and Smart Grid written by Bimal K. Bose and published by John Wiley & Sons. This book was released on 2019-06-27 with total page 752 pages. Available in PDF, EPUB and Kindle. Book excerpt: The comprehensive and authoritative guide to power electronics in renewable energy systems Power electronics plays a significant role in modern industrial automation and high- efficiency energy systems. With contributions from an international group of noted experts, Power Electronics in Renewable Energy Systems and Smart Grid: Technology and Applications offers a comprehensive review of the technology and applications of power electronics in renewable energy systems and smart grids. The authors cover information on a variety of energy systems including wind, solar, ocean, and geothermal energy systems as well as fuel cell systems and bulk energy storage systems. They also examine smart grid elements, modeling, simulation, control, and AI applications. The book's twelve chapters offer an application-oriented and tutorial viewpoint and also contain technology status review. In addition, the book contains illustrative examples of applications and discussions of future perspectives. This important resource: Includes descriptions of power semiconductor devices, two level and multilevel converters, HVDC systems, FACTS, and more Offers discussions on various energy systems such as wind, solar, ocean, and geothermal energy systems, and also fuel cell systems and bulk energy storage systems Explores smart grid elements, modeling, simulation, control, and AI applications Contains state-of-the-art technologies and future perspectives Provides the expertise of international authorities in the field Written for graduate students, professors in power electronics, and industry engineers, Power Electronics in Renewable Energy Systems and Smart Grid: Technology and Applications offers an up-to-date guide to technology and applications of a wide-range of power electronics in energy systems and smart grids.
Book Synopsis Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs by :
Download or read book Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs written by and published by . This book was released on 2001 with total page 554 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Springer Handbook of Semiconductor Devices by : Massimo Rudan
Download or read book Springer Handbook of Semiconductor Devices written by Massimo Rudan and published by Springer Nature. This book was released on 2022-11-10 with total page 1680 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Springer Handbook comprehensively covers the topic of semiconductor devices, embracing all aspects from theoretical background to fabrication, modeling, and applications. Nearly 100 leading scientists from industry and academia were selected to write the handbook's chapters, which were conceived for professionals and practitioners, material scientists, physicists and electrical engineers working at universities, industrial R&D, and manufacturers. Starting from the description of the relevant technological aspects and fabrication steps, the handbook proceeds with a section fully devoted to the main conventional semiconductor devices like, e.g., bipolar transistors and MOS capacitors and transistors, used in the production of the standard integrated circuits, and the corresponding physical models. In the subsequent chapters, the scaling issues of the semiconductor-device technology are addressed, followed by the description of novel concept-based semiconductor devices. The last section illustrates the numerical simulation methods ranging from the fabrication processes to the device performances. Each chapter is self-contained, and refers to related topics treated in other chapters when necessary, so that the reader interested in a specific subject can easily identify a personal reading path through the vast contents of the handbook.
Book Synopsis Wide Bandgap Semiconductor Electronics And Devices by : Uttam Singisetti
Download or read book Wide Bandgap Semiconductor Electronics And Devices written by Uttam Singisetti and published by World Scientific. This book was released on 2019-12-10 with total page 258 pages. Available in PDF, EPUB and Kindle. Book excerpt: 'This book is more suited for researchers already familiar with WBS who are interested in developing new WBG materials and devices since it provides the latest developments in new materials and processes and trends for WBS and UWBS technology.'IEEE Electrical Insulation MagazineWith the dawn of Gallium Oxide (Ga2O₃) and Aluminum Gallium Nitride (AlGaN) electronics and the commercialization of Gallium Nitride (GaN) and Silicon Carbide (SiC) based devices, the field of wide bandgap materials and electronics has never been more vibrant and exciting than it is now. Wide bandgap semiconductors have had a strong presence in the research and development arena for many years. Recently, the increasing demand for high efficiency power electronics and high speed communication electronics, together with the maturity of the synthesis and fabrication of wide bandgap semicon-ductors, has catapulted wide bandgap electronics and optoelectronics into the mainstream.Wide bandgap semiconductors exhibit excellent material properties, which can potentially enable power device operation at higher efficiency, higher temperatures, voltages, and higher switching speeds than current Si technology. This edited volume will serve as a useful reference for researchers in this field — newcomers and experienced alike.This book discusses a broad range of topics including fundamental transport studies, growth of high-quality films, advanced materials characterization, device modeling, high frequency, high voltage electronic devices and optical devices written by the experts in their respective fields. They also span the whole spectrum of wide bandgap materials including AlGaN, Ga2O₃and diamond.
Book Synopsis Wide Bandgap Semiconductors for Power Electronics by : Peter Wellmann
Download or read book Wide Bandgap Semiconductors for Power Electronics written by Peter Wellmann and published by John Wiley & Sons. This book was released on 2022-01-10 with total page 743 pages. Available in PDF, EPUB and Kindle. Book excerpt: Wide Bandgap Semiconductors for Power Electronic A guide to the field of wide bandgap semiconductor technology Wide Bandgap Semiconductors for Power Electronics is a comprehensive and authoritative guide to wide bandgap materials silicon carbide, gallium nitride, diamond and gallium(III) oxide. With contributions from an international panel of experts, the book offers detailed coverage of the growth of these materials, their characterization, and how they are used in a variety of power electronics devices such as transistors and diodes and in the areas of quantum information and hybrid electric vehicles. The book is filled with the most recent developments in the burgeoning field of wide bandgap semiconductor technology and includes information from cutting-edge semiconductor companies as well as material from leading universities and research institutions. By taking both scholarly and industrial perspectives, the book is designed to be a useful resource for scientists, academics, and corporate researchers and developers. This important book: Presents a review of wide bandgap materials and recent developments Links the high potential of wide bandgap semiconductors with the technological implementation capabilities Offers a unique combination of academic and industrial perspectives Meets the demand for a resource that addresses wide bandgap materials in a comprehensive manner Written for materials scientists, semiconductor physicists, electrical engineers, Wide Bandgap Semiconductors for Power Electronics provides a state of the art guide to the technology and application of SiC and related wide bandgap materials.
Book Synopsis Ultra-wide Bandgap Semiconductor Materials by : Meiyong Liao
Download or read book Ultra-wide Bandgap Semiconductor Materials written by Meiyong Liao and published by Elsevier. This book was released on 2019-06-18 with total page 506 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ultra-wide Bandgap Semiconductors (UWBG) covers the most recent progress in UWBG materials, including sections on high-Al-content AlGaN, diamond, B-Ga2O3, and boron nitrides. The coverage of these materials is comprehensive, addressing materials growth, physics properties, doping, device design, fabrication and performance. The most relevant and important applications are covered, including power electronics, RF electronics and DUV optoelectronics. There is also a chapter on novel structures based on UWBG, such as the heterojunctions, the low-dimensional structures, and their devices. This book is ideal for materials scientists and engineers in academia and R&D searching for materials superior to silicon carbide and gallium nitride. - Provides a one-stop resource on the most promising ultra-wide bandgap semiconducting materials, including high-Al-content AlGaN, diamond, ß-Ga2O3, boron nitrides, and low-dimensional materials - Presents comprehensive coverage, from materials growth and properties, to device design, fabrication and performance - Features the most relevant applications, including power electronics, RF electronics and DUV optoelectronics
Book Synopsis Wide Bandgap Semiconductor Power Devices by : B. Jayant Baliga
Download or read book Wide Bandgap Semiconductor Power Devices written by B. Jayant Baliga and published by Woodhead Publishing. This book was released on 2018-10-17 with total page 420 pages. Available in PDF, EPUB and Kindle. Book excerpt: Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why these devices are superior to existing silicon devices. The book lays the groundwork for an understanding of an array of applications and anticipated benefits in energy savings. Authored by the Founder of the Power Semiconductor Research Center at North Carolina State University (and creator of the IGBT device), Dr. B. Jayant Baliga is one of the highest regarded experts in the field. He thus leads this team who comprehensively review the materials, device physics, design considerations and relevant applications discussed. - Comprehensively covers power electronic devices, including materials (both gallium nitride and silicon carbide), physics, design considerations, and the most promising applications - Addresses the key challenges towards the realization of wide bandgap power electronic devices, including materials defects, performance and reliability - Provides the benefits of wide bandgap semiconductors, including opportunities for cost reduction and social impact
Book Synopsis Highly Integrated Gate Drivers for Si and GaN Power Transistors by : Achim Seidel
Download or read book Highly Integrated Gate Drivers for Si and GaN Power Transistors written by Achim Seidel and published by Springer Nature. This book was released on 2021-03-31 with total page 137 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book explores integrated gate drivers with emphasis on new gallium nitride (GaN) power transistors, which offer fast switching along with minimum switching losses. It serves as a comprehensive, all-in-one source for gate driver IC design, written in handbook style with systematic guidelines. The authors cover the full range from fundamentals to implementation details including topics like power stages, various kinds of gate drivers (resonant, non-resonant, current-source, voltage-source), gate drive schemes, driver supply, gate loop, gate driver power efficiency and comparison silicon versus GaN transistors. Solutions are presented on the system and circuit level for highly integrated gate drivers. Coverage includes miniaturization by higher integration of subfunctions onto the IC (buffer capacitors), as well as more efficient switching by a multi-level approach, which also improves robustness in case of extremely fast switching transitions. The discussion also includes a concept for robust operation in the highly relevant case that the gate driver is placed in distance to the power transistor. All results are widely applicable to achieve highly compact, energy efficient, and cost-effective power electronics solutions.
Book Synopsis Investigation of Reliability Aspects of Power Semiconductors in Photovoltaic Central Inverters for Sunbelt Regions by : Christian Felgemacher
Download or read book Investigation of Reliability Aspects of Power Semiconductors in Photovoltaic Central Inverters for Sunbelt Regions written by Christian Felgemacher and published by kassel university press GmbH. This book was released on 2018-03-23 with total page 186 pages. Available in PDF, EPUB and Kindle. Book excerpt: High reliability and system lifetimes in the range of 30 years are essential for renewable energy systems such as photovoltaic power plants to minimise costs for the generated electric energy. At the same time such systems are used in regions with high solar irradiance and also harsh environmental conditions. Therefore, designs for photovoltaic inverters need to meet not only the key design criteria of high conversion efficiency but also need to be very robust and at the same time meet challenging cost targets. In this dissertation aspects concerning the lifetime and reliability of power semiconductors in photovoltaic central inverters are investigated. On key topic of the dissertation is the measurement of the voltage dependent failure rate due to cosmic radiation induced single-event-burnout of SiC and Si power semiconductors. The second topic is the development of a system level simulation to quantify the stress on the power semiconductors in a PV central inverters in various regions of the world. Further topics are the investigation of improved control concepts for the cooling system of PV central inverters and the monitoring of IGBT temperatures during converter operation.
Book Synopsis Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs by :
Download or read book Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs written by and published by . This book was released on 2005 with total page 420 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Handbook of GaN Semiconductor Materials and Devices by : Wengang (Wayne) Bi
Download or read book Handbook of GaN Semiconductor Materials and Devices written by Wengang (Wayne) Bi and published by CRC Press. This book was released on 2017-10-20 with total page 709 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book addresses material growth, device fabrication, device application, and commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and power electronics devices. It begins with an overview on basics of semiconductor materials, physics, growth and characterization techniques, followed by detailed discussion of advantages, drawbacks, design issues, processing, applications, and key challenges for state of the art GaN-based devices. It includes state of the art material synthesis techniques with an overview on growth technologies for emerging bulk or free standing GaN and AlN substrates and their applications in electronics, detection, sensing, optoelectronics and photonics. Wengang (Wayne) Bi is Distinguished Chair Professor and Associate Dean in the College of Information and Electrical Engineering at Hebei University of Technology in Tianjin, China. Hao-chung (Henry) Kuo is Distinguished Professor and Associate Director of the Photonics Center at National Chiao-Tung University, Hsin-Tsu, Taiwan, China. Pei-Cheng Ku is an associate professor in the Department of Electrical Engineering & Computer Science at the University of Michigan, Ann Arbor, USA. Bo Shen is the Cheung Kong Professor at Peking University in China.
Book Synopsis Proceedings of the 2nd International Symposium on Power Semiconductor Devices & ICs, ISPSD '90 by : International Symposium on Power Semiconductor Devices & ICs
Download or read book Proceedings of the 2nd International Symposium on Power Semiconductor Devices & ICs, ISPSD '90 written by International Symposium on Power Semiconductor Devices & ICs and published by . This book was released on 1990 with total page 294 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Wide Bandgap Based Devices by : Farid Medjdoub
Download or read book Wide Bandgap Based Devices written by Farid Medjdoub and published by MDPI. This book was released on 2021-05-26 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt: Emerging wide bandgap (WBG) semiconductors hold the potential to advance the global industry in the same way that, more than 50 years ago, the invention of the silicon (Si) chip enabled the modern computer era. SiC- and GaN-based devices are starting to become more commercially available. Smaller, faster, and more efficient than their counterpart Si-based components, these WBG devices also offer greater expected reliability in tougher operating conditions. Furthermore, in this frame, a new class of microelectronic-grade semiconducting materials that have an even larger bandgap than the previously established wide bandgap semiconductors, such as GaN and SiC, have been created, and are thus referred to as “ultra-wide bandgap” materials. These materials, which include AlGaN, AlN, diamond, Ga2O3, and BN, offer theoretically superior properties, including a higher critical breakdown field, higher temperature operation, and potentially higher radiation tolerance. These attributes, in turn, make it possible to use revolutionary new devices for extreme environments, such as high-efficiency power transistors, because of the improved Baliga figure of merit, ultra-high voltage pulsed power switches, high-efficiency UV-LEDs, and electronics. This Special Issue aims to collect high quality research papers, short communications, and review articles that focus on wide bandgap device design, fabrication, and advanced characterization. The Special Issue will also publish selected papers from the 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, held in France (WOCSDICE 2019), which brings together scientists and engineers working in the area of III–V, and other compound semiconductor devices and integrated circuits. In particular, the following topics are addressed: – GaN- and SiC-based devices for power and optoelectronic applications – Ga2O3 substrate development, and Ga2O3 thin film growth, doping, and devices – AlN-based emerging material and devices – BN epitaxial growth, characterization, and devices
