Ultrafast All-optical Switching Based on Intersubband Transitions in Gallium Nitride/aluminum Nitride Quantum-well Waveguides

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Total Pages : 260 pages
Book Rating : 4.:/5 (46 download)

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Book Synopsis Ultrafast All-optical Switching Based on Intersubband Transitions in Gallium Nitride/aluminum Nitride Quantum-well Waveguides by : Yan Li

Download or read book Ultrafast All-optical Switching Based on Intersubband Transitions in Gallium Nitride/aluminum Nitride Quantum-well Waveguides written by Yan Li and published by . This book was released on 2009 with total page 260 pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: Intersubband transitions in semiconductor quantum wells have been the subject of extensive research for the past several years and are nowadays used in a variety of devices operating at mid-infrared wavelengths, such as quantum-well infrared photodetectors and quantum cascade lasers. More recently near-infrared intersubband transitions have also been measured in wide-conduction-band-offset heterostructures such as GaN/AlGaN and InGaAs/AlAsSb quantum wells, at wavelengths in the low-loss transmission window of optical fibers. This opens up the possibility of utilizing the unique features of intersubband transitions for information processing applications in fiber-optic communications. In particular, due to their ultrafast relaxation lifetimes and giant optical nonlinearities, intersubband transitions are ideally well suited to nonlinear optical switching at bit rates of several hundred Gb/s. Thus they have the potential to play a key enabling role in future ultra-broadband all-optical networks, in which information is not only transmitted but also processed in the optical domain. This dissertation addresses the design, fabrication and demonstration of all-optical switching devices operating at fiber-optic communication wavelengths, based on intersubband transitions in GaN/AlN quantum-well waveguides. The intersubband absorption properties of GaN/AlN quantum wells have first been investigated via Fourier-transform infrared spectroscopy. At the same time, a self-consistent Poisson and Schrödinger equations solver has been developed to interpret the measurement results, and to design quantum well structures optimized for all-optical switching applications. The design, fabrication and characterization of waveguides based on these quantum wells are also addressed in detail in this dissertation. All-optical switching via cross absorption saturation has then been demonstrated with an optimized waveguide structure. The measured switching times are shorter than one picosecond, which indicates the suitability of these nonlinear devices for all-optical gating at bit rates of several hundred Gb/s. At the same time, relatively low control-pulse switching energies of about 40 pJ have been demonstrated. This important parameter can be further improved using a novel approach based on coupled quantum wells, which we have proposed and theoretically investigated. Finally, the intersubband refractive-index nonlinearities of GaN/AlN quantum wells have been studied both experimentally and theoretically. The results indicate that these quantum wells are also promising for all-optical switching via cross-phase modulation, an approach that may prove advantageous in terms of contrast ratio, on-state losses, and regenerative capabilities.

Chemical Abstracts

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ISBN 13 :
Total Pages : 2566 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Chemical Abstracts by :

Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2566 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Intersubband Transitions In Quantum Structures

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Publisher : McGraw Hill Professional
ISBN 13 : 0071457925
Total Pages : 455 pages
Book Rating : 4.0/5 (714 download)

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Book Synopsis Intersubband Transitions In Quantum Structures by : Roberto Paiella

Download or read book Intersubband Transitions In Quantum Structures written by Roberto Paiella and published by McGraw Hill Professional. This book was released on 2006-05-04 with total page 455 pages. Available in PDF, EPUB and Kindle. Book excerpt: Investigates and outlines the experimental technique of intersubband transitions as a solution. Covers topics such as: intersubband emission in silicon-based quantum structure, quantum dot infrared photodetectors, antimonide, quantum cascade lasers for the 3-5m atmospheric window and more.

Integrated ultrafast all-optical switches relying on intersubband transitions in InP-based photonic bandgap structures

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ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (86 download)

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Book Synopsis Integrated ultrafast all-optical switches relying on intersubband transitions in InP-based photonic bandgap structures by : Ping Ma

Download or read book Integrated ultrafast all-optical switches relying on intersubband transitions in InP-based photonic bandgap structures written by Ping Ma and published by . This book was released on 2011 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

1 5 ΜM Gan/Aln Mqws Intersubband All-Optical Switches

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Publisher : LAP Lambert Academic Publishing
ISBN 13 : 9783659171772
Total Pages : 220 pages
Book Rating : 4.1/5 (717 download)

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Book Synopsis 1 5 ΜM Gan/Aln Mqws Intersubband All-Optical Switches by : Hassanet Sodabanlu

Download or read book 1 5 ΜM Gan/Aln Mqws Intersubband All-Optical Switches written by Hassanet Sodabanlu and published by LAP Lambert Academic Publishing. This book was released on 2012-07 with total page 220 pages. Available in PDF, EPUB and Kindle. Book excerpt: So far, a strong intersubband transition at 1.55-um wavelength range was very difficult to achieve in GaN/AlN multiple quantum wells (MQWs) grown by metalorganic vapor phase epitaxy (MOVPE) using conventional growth method. This book first provides a general introduction to the physics of intersubband transition in GaN/AlN MQWs and its device applications especially all-optical switches operating at commutation wavelength. Later on, the issues with regard to conventional MOVPE were comprehensively discussed and analyzed. As a solution of these problems, a growth technique called "pulse-injection method" was employed to achieve intersubband absorption at 1.55-um wavelength range. The effects of growth parameters on the properties of intersubband transition were investigated and discussed. Various types of AlN-based waveguides, including ridge, high-mesa, and spot-size converter, with GaN/AlN MQWs absorber were designed and fabricated. The saturation of intersubband absorption which determines the functionality of all-optical switch was clearly observed. This book demonstrated the potential of MOVPE-grown GaN/AlN MQWs for intersubband devices operating at communication wavelength.

Ultrafast All-optical Switching Using Low-temperature-grown Gallium Arsenide

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ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (654 download)

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Book Synopsis Ultrafast All-optical Switching Using Low-temperature-grown Gallium Arsenide by :

Download or read book Ultrafast All-optical Switching Using Low-temperature-grown Gallium Arsenide written by and published by . This book was released on 1998 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Optical Switching in Low-Dimensional Systems

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Publisher : Springer Science & Business Media
ISBN 13 : 146847278X
Total Pages : 374 pages
Book Rating : 4.4/5 (684 download)

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Book Synopsis Optical Switching in Low-Dimensional Systems by : Hartmut Haug

Download or read book Optical Switching in Low-Dimensional Systems written by Hartmut Haug and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 374 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains all the papers presented at the NATO workshop on "Optical Switching in Low Dimensional Systems" held in Marbella, Spain from October 6th to 8th, 1988. Optical switching is a basic function for optical data processing, which is of technological interest because of its potential parallelism and its potential speed. Semiconductors which exhibit resonance enhanced optical nonlinearities in the frequency range close to the band edge are the most intensively studied materials for optical bistability and fast gate operation. Modern crystal growth techniques, particularly molecular beam epitaxy, allow the manufacture of semiconductor microstructures such as quantum wells, quantum wires and quantum dots in which the electrons are only free to move in two, one or zero dimensions, of the optically excited electron-hole pairs in these low respectively. The spatial confinement dimensional structures gives rise to an enhancement of the excitonic nonlinearities. Furthermore, the variations of the microstruture extensions, of the compositions, and of the doping offer great new flexibility in engineering the desired optical properties. Recently, organic chain molecules (such as polydiacetilene) which are different realizations of one dimensional electronic systems, have been shown also to have interesting optical nonlinearities. Both the development and study of optical and electro-optical devices, as well as experimental and theoretical investigations of the underlying optical nonlinearities, are contained in this book.

Ultrafast All-optical Switching Via Grating-based Fabry-perot Resonators and Surface Normal Fiber-to-waveguide Couplers

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ISBN 13 :
Total Pages : 426 pages
Book Rating : 4.:/5 (9 download)

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Book Synopsis Ultrafast All-optical Switching Via Grating-based Fabry-perot Resonators and Surface Normal Fiber-to-waveguide Couplers by : John Luther Covey

Download or read book Ultrafast All-optical Switching Via Grating-based Fabry-perot Resonators and Surface Normal Fiber-to-waveguide Couplers written by John Luther Covey and published by . This book was released on 2015 with total page 426 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electronic microchips have now firmly plateaued in switching speed. A promising solution for increasing performance on unparallelizable tasks is to switch digital data purely in the optical domain on a photonic chip, as all-optical switching can reach up to terahertz speeds and beyond. Because ultrafast optical effects are weak phenomena, materials with extremely high nonlinear sensitivity must be developed, and very high optical intensities and coupling efficiencies are required to adequately switch data streams of light. In this thesis, unique all-optical platforms, waveguides, fiber-waveguide grating couplers, and an ultrafast optical switch were experimentally demonstrated as proofs-of-concept for the validity of densely integrated all-optical switches. Two horizontal slot waveguiding structures were designed and fabricated from scratch: a multiple horizontal slot waveguide with polycrystalline silicon sandwiching third-order nonlinear slots and a nonlinear cover-cladding with slot-like behavior over a thin crystalline silicon waveguide. Perfectly vertical grating couplers were then designed from a novel genetic algorithm, fabricated, and experimentally tested for both platforms with two promising nonlinear materials: silicon nanocrystals or a supra-molecular assembly, DDMEBT. Vertical grating couplers in the multiple horizontal slot waveguide achieved a theoretical coupling efficiency of 63% and an experimental coupling efficiency of 60%, which is the highest coupling efficiency into nonlinear slot waveguides to date. Vertical grating couplers for the cover-slot waveguide experimentally demonstrated a coupling efficiency of 38% and an extrapolated 1 dB bandwidth of 66 nm, the largest grating-coupled 1 dB bandwidth obtained for slot waveguides to date. A grating coupler was then designed to be included as one of two grating reflectors in a nonlinear resonator switch. Coupled mode theory and vectorial eigenmode propagation simulations were used to optimally design the grating coupler/resonator device, resulting in a record low footprint of 710 [mu]m2 per combined switch and fiber coupler device. The third-order nonlinear molecular material, DDMEBT, was, for the first time, successfully spun onto pre-patterned silicon-on-insulator chips with repeatable, defect-free results. Extremely sensitive experimental autocorrelation of the resonator's impulse response yielded output pulse durations as low as 600 femtoseconds. At high power and low pulse repetition rates, the switch's resonances redshifted by 4 nm with 4 dB of switching contrast, revealing an ultrafast Kerr effect which matched previous works. The resonator switch is therefore capable of modulating a single optical carrier frequency at 1 THz and switching an optical data stream at 500 GHz. These are the fastest switching speeds demonstrated by an integrated all-optical switch and validate the proof-of-concept needed for a future of densely integrated all-optical processing.

Ultrafast All-Optical Switching in an A1GaAs X-Junction

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ISBN 13 :
Total Pages : 4 pages
Book Rating : 4.:/5 (228 download)

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Book Synopsis Ultrafast All-Optical Switching in an A1GaAs X-Junction by : J. S. Aitchison

Download or read book Ultrafast All-Optical Switching in an A1GaAs X-Junction written by J. S. Aitchison and published by . This book was released on 1992 with total page 4 pages. Available in PDF, EPUB and Kindle. Book excerpt: Several recent experiments have verified the existence of relatively large refractive nonlinearities in the region of half the band gap of AlGaAs and GaAs/AlGaAs quantum well structures. Working in this wavelength region has several advantages; it minimizes the effects of two-photon absorption (TPA), which has limited the usefulness of previous devices, it gives rise to devices with very low linear loss and hence high throughput, finally, it also allows the material to be chosen so that the operating wavelength is in the low-loss, 1.55 micrometers, telecommunications window. We have previously reported ultrafast all-optical switching in Al0.18Ga0.82As directional couplers. These devices use the nonlinear refractive index change to break the coupling between two modes and hence change the relative output states of the device. The nonlinear switching characteristics of the directional coupler are a relatively broad function of input power and may not be the optimum for a practical device. Recent theoretical investigations have predicted all-optical switching in nonlinear X-junctions as a consequence of symmetry breaking. The switching characteristics of such devices show the potentially useful feature of a digital-like response. In this paper we report the first experimental observation of ultrafast, all-optical switching in nonlinear X-junctions.

Ultrafast All-optical Switching Using Low-temperature-grown Gallium Arsenide [microform]

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Publisher : National Library of Canada = Bibliothèque nationale du Canada
ISBN 13 : 9780612414624
Total Pages : 374 pages
Book Rating : 4.4/5 (146 download)

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Book Synopsis Ultrafast All-optical Switching Using Low-temperature-grown Gallium Arsenide [microform] by : Hany Loka

Download or read book Ultrafast All-optical Switching Using Low-temperature-grown Gallium Arsenide [microform] written by Hany Loka and published by National Library of Canada = Bibliothèque nationale du Canada. This book was released on 1998 with total page 374 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Ultrafast All-optical Switching Using Low-temperature-grown Gallium Arsenide

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ISBN 13 :
Total Pages : 0 pages
Book Rating : 4.:/5 (133 download)

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Book Synopsis Ultrafast All-optical Switching Using Low-temperature-grown Gallium Arsenide by : Hany Loka

Download or read book Ultrafast All-optical Switching Using Low-temperature-grown Gallium Arsenide written by Hany Loka and published by . This book was released on 1998 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: For low-temperature-grown GaAs (LT-GaAs) the temperature in molecular beam epitaxy (MBE) growth is reduced from the standard 550-650°C range to substrate temperatures between 200°C and 300°C. LT-GaAs is a high quality single crystal with as much as 1-2% excess arsenic incorporation, which gives the material its unique properties. We show that LT-GaAs is a promising material for all-optical switching devices due to its outstanding optical characteristics. We formulate a phenomenological rate equation model to describe the dynamics of the carriers in LT-GaAs. A series of experiments are performed to measure the constants for the model and to optically characterize the material. Our model is very successful in accurately predicting the carrier dynamics over a wide range of time frames, optical intensities and wavelengths. We anticipate that by making minor modifications to the model, we can apply it to similar materials in the telecommunications regime around 1.55 [mu]m. The control of growth and annealing temperatures can be used to tailor the different material constants to fulfill the requirements for different all-optical devices. We investigate the influence of the excitation pulse width on the different dynamics in LT-GaAs. We also use the rate equation model to optimize the material for all-optical switching. By using LT-GaAs one can overcome most of the problems inherent with other materials for all-optical switching. In this thesis we thoroughly examine the use of LT-GaAs as the active layer in a compact and polarization independent asymmetric Fabry-Pérot (AFP) device operating at a center wavelength [lambda] = 850 nm. The device shows some attractive characteristics such as fast switching speed (3ps), large bandwidth (40 nm), low insertion loss (2.8 dB) and high contrast ratio (15 dB) using low average energy flux (200 fJ/[mu]m2). Possible applications of this device are in optical logic gates for ultrafast all-optical time division multiplexing with extremely wide bandwidth and high contrast ratio.

Optical Nonlinearity and Waveguide Devices for Photonic Integration in Ultrafast Communication Networks

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ISBN 13 :
Total Pages : 0 pages
Book Rating : 4.:/5 (141 download)

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Book Synopsis Optical Nonlinearity and Waveguide Devices for Photonic Integration in Ultrafast Communication Networks by : Md Shakil Ahmed

Download or read book Optical Nonlinearity and Waveguide Devices for Photonic Integration in Ultrafast Communication Networks written by Md Shakil Ahmed and published by . This book was released on 2015 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: It is important to understand optical nonlinearities in Silicon and Gallium Nitride to take advantage and reap benefits of their implementations in optical devices used in telecommunication networks. This research is focussed on investigation and reviewing the optical nonlinear properties of Silicon and Gallium Nitride waveguides and how these nonlinearities can be used in the realization of preferably all-optical ultra-fast devices in the next generation integrated optics. The research related to optical lasing, optical switching, data modulation, optical signal amplification and photo-detection using Gallium Nitride devices based on waveguides is examined. Attention is also paid to hybrid and monolithic integration approaches towards the development of photonic chips.

Ultrafast All-optical Switching Based on InGaAsP Grown by He-plasma-assisted Molecular Beam Epitaxy

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ISBN 13 :
Total Pages : pages
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Book Synopsis Ultrafast All-optical Switching Based on InGaAsP Grown by He-plasma-assisted Molecular Beam Epitaxy by : Li Qian

Download or read book Ultrafast All-optical Switching Based on InGaAsP Grown by He-plasma-assisted Molecular Beam Epitaxy written by Li Qian and published by . This book was released on 2000 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: We present the first experimental study of the optical properties of HELP InGaAsP (InGaAsP grown by He-plasma-assisted molecular beam epitaxy) relevant to all-optical switching, and the first demonstration of picosecond switching using this material. We observed an optical response time of 15 ps, a nonlinear index change as large as 0.077, a sharp absorption band edge, and a small absorption tail in HELP InGaAsP. The unique coexistence of ultrafast response, large interband nonlinearity, and small band-tail absorption, never before reported, makes HELP InGaAsP particularly suitable for ultrafast all-optical switching. Additionally, faster response (subpicosecond) was achieved by doping the material with beryllium, and moderate doping (up to ~1018 cm-3) did not significantly alter the absorption edge. We systematically studied the response time variations with doping concentration, annealing temperature, carrier density, and wavelength. We conclude that, (a) Be doping reduces the response time by compensating for donor-like mid-gap states, thus increasing the electron trap concentration; (b) annealing removes defects responsible for fast carrier trapping; (c) the response time increases with carrier density due to limited trap states; (d) the response time varies with wavelength due to difference in electron and hole trapping cross-sections, which were determined based on experimental results and a phenomenological two-trap-level rate equation model. We investigated two types of HELP-InGaAsP-based all-optical switching devices, the nonlinear directional coupler (NLDC) and the asymmetric Fabry-Pérot (AFP) switch. Based on numerical modelling and waveguide loss measurements, we conclude that, while HELP-InGaAsP-based passive NLDCs are in principle viable, practical devices will tend to require high switching energy, and will likely experience low contrast and high insertion loss. We demonstrated that AFP devices will outperform NLDCs in contrast ratio, throughput, bandwidth, switching time, and polarization-sensitivity. We designed and fabricated three prototype AFP devices, and achieved polarization-independent switching with a 5 ps switching window, 20 dB contrast ratio, >=10% throughput, 25-40 nm bandwidth (at >=10 dB contrast ratio), and 0.5-1.4 pJ/[mu]m2 switching energy density. HELP InGaAsP is a promising material for ultrafast switching and other applications requiring ultrafast nonlinear operations. The HELP-InGaAsP-based AFP device we demonstrated is well suited for demultiplexing high-bit-rate data in practical optical communications systems.

Optical Switches

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Publisher : Elsevier
ISBN 13 : 0857090410
Total Pages : 345 pages
Book Rating : 4.8/5 (57 download)

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Book Synopsis Optical Switches by : S J Chua

Download or read book Optical Switches written by S J Chua and published by Elsevier. This book was released on 2010-10-28 with total page 345 pages. Available in PDF, EPUB and Kindle. Book excerpt: Optical communication using optical fibres as the transmission medium is essential to handling the massive growth of both telecom and datacom traffic. To fully realize the potential bandwidth available on these optical fibres, other components of the optical network system have to be developed, ranging from detectors and multiplexers to buffers and switches. This book addresses the different technologies which can be applied to switching optical signals.An optical switch functions by selectively switching an optical signal delivered through an optical fibre or in an integrated optical circuit to another. Several methods are available and each relies on a different physical mechanism for its operation. The various physical mechanisms used are discussed in the main chapters in the book which cover electro-optical, thermo-optical, micro-electro-mechanical (MEMS)-based and semiconductor optical amplifier (SOA)-based optical switches. The book also covers switching based on optical nonlinear effects, liquid and photonic crystal optical switches as well as fibre, holographic, quantum optical and other types of optical switches. Each chapter discusses the choice of materials, fabrication techniques and key issues in switch design.With its distinguished editors and international team of contributors, Optical switches: materials and design is a standard reference for the telecommunications industry and those researching this important topic. Reviews this commercially significant area of research and addresses the different technologies which can be applied to switching optical signals Provides a balanced look at the developments which can be defined as key trends in optical switches Major optical switches including electro-optical, thermo optical and magneto-optical switches are discussed and the respective theory and principles of each explored

Ultrafast Optical Switching Using Semiconductors for High-speed Communication Systems

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ISBN 13 :
Total Pages : 322 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Ultrafast Optical Switching Using Semiconductors for High-speed Communication Systems by : Yuan-Hua Kao

Download or read book Ultrafast Optical Switching Using Semiconductors for High-speed Communication Systems written by Yuan-Hua Kao and published by . This book was released on 1998 with total page 322 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Ultrafast All-optical Switching Based on InGaAsP Grown by He-plasma-assisted Molecular Beam Epitaxy

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Total Pages : pages
Book Rating : 4.:/5 (654 download)

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Book Synopsis Ultrafast All-optical Switching Based on InGaAsP Grown by He-plasma-assisted Molecular Beam Epitaxy by :

Download or read book Ultrafast All-optical Switching Based on InGaAsP Grown by He-plasma-assisted Molecular Beam Epitaxy written by and published by . This book was released on 2000 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Intersubband Transitions in Quantum Wells: Physics and Device Applications II

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Publisher : Academic Press
ISBN 13 : 9780127521756
Total Pages : 244 pages
Book Rating : 4.5/5 (217 download)

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Book Synopsis Intersubband Transitions in Quantum Wells: Physics and Device Applications II by :

Download or read book Intersubband Transitions in Quantum Wells: Physics and Device Applications II written by and published by Academic Press. This book was released on 1999-10-27 with total page 244 pages. Available in PDF, EPUB and Kindle. Book excerpt: