Tunnel Contact Junction Aluminum Gallium Arsenide Gallium Arsenide Indium Gallium Arsenide Quantum Well Heterostructure Lasers And Light Emitters With Native Oxide Defined Lateral Currents

Author : Michael Ragan Krames
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (774 download)

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Download or read book Native Oxidation of Selectively Disordered Aluminum Gallium Arsenide Quantum Well Heterostructures: Deep Oxide Structures for High Performance Lasers and Waveguides written by Michael Ragan Krames and published by . This book was released on 1995 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Data are presented showing that "deep," device-quality native oxide structures can be formed in selected areas in $rm Alsb{x}Gasb{1-x}$As-GaAs quantum well heterostructure (QWH) crystals. The deep oxides are formed using a combination of improved area-selective impurity-induced layer disordering (IILD) and water vapor oxidation at an elevated temperature (525$spcirc$C). The resulting oxide extends from the QWH crystal surface into the lower confining layers, penetrating the active region and forming a deep, insulating, low-refractive-index structure with a smooth interface that is free of defects and dislocations. Data are presented on devices utilizing the large lateral index step provided by the deep oxide, including high performance AlGaAs-GaAs QWH stripe-geometry laser diodes, waveguides with low bend loss, and low-threshold curved-geometry lasers. These devices display tight routing capability and suggest compact, integrable geometries for reducing the real-estate requirements (and the cost) of the optoelectronic integrated circuits and for offering less constraint in circuit design.