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Transport Equations For Electrons In Two Valley Semiconductors
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Book Synopsis Transport Equations for Electrons in Two-valley Semiconductors by : Kjell Blötekjaer
Download or read book Transport Equations for Electrons in Two-valley Semiconductors written by Kjell Blötekjaer and published by . This book was released on 1969 with total page 50 pages. Available in PDF, EPUB and Kindle. Book excerpt: Transport equations are derived for particles, momentum and energy of electrons in a semiconductor with two distinct valleys in the conduction band, such as GaAs. Care is taken to state and discuss the assumptions which are made in the derivation. The collision processes are expressed in terms of relaxation times. The accuracy is improved by considering these to depend on the average kinetic energy rather than the electron temperature. Other transport equations used in the literature are discussed, and shown to be incomplete and inaccurate in many cases. (Author).
Book Synopsis Transport Equations for Semiconductors by : Ansgar Jüngel
Download or read book Transport Equations for Semiconductors written by Ansgar Jüngel and published by Springer Science & Business Media. This book was released on 2009-03-17 with total page 326 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume presents a systematic and mathematically accurate description and derivation of transport equations in solid state physics, in particular semiconductor devices.
Book Synopsis Transport Equations for Semiconductors by : Ansgar Jüngel
Download or read book Transport Equations for Semiconductors written by Ansgar Jüngel and published by Springer. This book was released on 2009-04-20 with total page 326 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor devices are ubiquitous in the modern computer and telecommunications industry. A precise knowledge of the transport equations for electron flow in semiconductors when a voltage is applied is therefore of paramount importance for further technological breakthroughs. In the present work, the author tackles their derivation in a systematic and rigorous way, depending on certain key parameters such as the number of free electrons in the device, the mean free path of the carriers, the device dimensions and the ambient temperature. Accordingly a hierarchy of models is examined which is reflected in the structure of the book: first the microscopic and macroscopic semi-classical approaches followed by their quantum-mechanical counterparts.
Book Synopsis Balance Equation Approach To Electron Transport In Semiconductors by : Xiaolin Lei
Download or read book Balance Equation Approach To Electron Transport In Semiconductors written by Xiaolin Lei and published by World Scientific Publishing Company. This book was released on 2008-08-21 with total page 657 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents a systematic, comprehensive and up-to-date description of the physical basis of the balance equation transport theory and its applications in bulk and low-dimensional semiconductors. The different aspects of the balance equation method, originally proposed by C S Ting and the author of the present book, were reviewed in the volume entitled Physics of Hot Electron Transport in Semiconductors (edited by C S Ting, World Scientific, 1992). Since then, this method has been extensively developed and applied to various new fields, such as transport in nonparabolic systems, spatially nonuniform systems and semiconductor devices, miniband conduction of superlattices, hot-electron magnetotransport, effects of impact ionization in transport, microwave-induced magnetoresistance oscillation, radiation-driven transport and electron cooling, etc. Due to its simplicity and effectiveness, the balance equation approach has become a useful tool to tackle the many transport phenomena in semiconductors, and provides a reliable basis for developing theories, modeling devices and explaining experiments.The book may be used as a textbook by graduate students. It will also benefit researchers in the field by helping them grasp the basic principles and techniques of the method, without having to spend a lot of time digging out the information from widespread literature covering a period of 30 years.
Book Synopsis Semiconductor Equations by : Peter A. Markowich
Download or read book Semiconductor Equations written by Peter A. Markowich and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 261 pages. Available in PDF, EPUB and Kindle. Book excerpt: In recent years the mathematical modeling of charge transport in semi conductors has become a thriving area in applied mathematics. The drift diffusion equations, which constitute the most popular model for the simula tion of the electrical behavior of semiconductor devices, are by now mathe matically quite well understood. As a consequence numerical methods have been developed, which allow for reasonably efficient computer simulations in many cases of practical relevance. Nowadays, research on the drift diffu sion model is of a highly specialized nature. It concentrates on the explora tion of possibly more efficient discretization methods (e.g. mixed finite elements, streamline diffusion), on the improvement of the performance of nonlinear iteration and linear equation solvers, and on three dimensional applications. The ongoing miniaturization of semiconductor devices has prompted a shift of the focus of the modeling research lately, since the drift diffusion model does not account well for charge transport in ultra integrated devices. Extensions of the drift diffusion model (so called hydrodynamic models) are under investigation for the modeling of hot electron effects in submicron MOS-transistors, and supercomputer technology has made it possible to employ kinetic models (semiclassical Boltzmann-Poisson and Wigner Poisson equations) for the simulation of certain highly integrated devices.
Book Synopsis Simulation of Semiconductor Processes and Devices 2001 by : Dimitris Tsoukalas
Download or read book Simulation of Semiconductor Processes and Devices 2001 written by Dimitris Tsoukalas and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 463 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains the Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes, SISPAD 01, held on September 5–7, 2001, in Athens. The conference provided an open forum for the presentation of the latest results and trends in process and device simulation. The trend towards shrinking device dimensions and increasing complexity in process technology demands the continuous development of advanced models describing basic physical phenomena involved. New simulation tools are developed to complete the hierarchy in the Technology Computer Aided Design simulation chain between microscopic and macroscopic approaches. The conference program featured 8 invited papers, 60 papers for oral presentation and 34 papers for poster presentation, selected from a total of 165 abstracts from 30 countries around the world. These papers disclose new and interesting concepts for simulating processes and devices.
Book Synopsis Electron Transport Phenomena in Semiconductors by : B. M. Askerov
Download or read book Electron Transport Phenomena in Semiconductors written by B. M. Askerov and published by World Scientific. This book was released on 1994 with total page 416 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the first systematic and detailed exposition of the linear theory of the stationary electron transport phenomena in semiconductors. Arbitrary isotropic and anisotropic nonparabolic bands as well as p-Ge-type bands are considered. Phonon drag effect are taken account of in an arbitrary nonquantizing magnetic field. Scattering theory is discussed in detail with account taken of the Bloch wave functions effect. Transport phenomena in the quantizing magnetic field are studied as well as the size effects in thin films. Band structures of the semiconductors and semiconductor compounds of interest are also considered.The main part of the book deals with the three important problems: charge carrier statistics in a semiconductor, classical and quantum theory of the electron transport phenomena. All the theoretical results considered as well as the validity conditions are presented in the form which may be directly used to interpret experimental data.
Book Synopsis Compound Semiconductor Device Physics by : Sandip Tiwari
Download or read book Compound Semiconductor Device Physics written by Sandip Tiwari and published by Academic Press. This book was released on 2013-10-22 with total page 845 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides one of the most rigorous treatments of compound semiconductor device physics yet published. A complete understanding of modern devices requires a working knowledge of low-dimensional physics, the use of statistical methods, and the use of one-, two-, and three-dimensional analytical and numerical analysis techniques. With its systematic and detailed**discussion of these topics, this book is ideal for both the researcher and the student. Although the emphasis of this text is on compound semiconductor devices, many of the principles discussed will also be useful to those interested in silicon devices. Each chapter ends with exercises that have been designed to reinforce concepts, to complement arguments or derivations, and to emphasize the nature of approximations by critically evaluating realistic conditions. One of the most rigorous treatments of compound semiconductor device physics yet published**Essential reading for a complete understanding of modern devices**Includes chapter-ending exercises to facilitate understanding
Book Synopsis Analysis and Simulation of Semiconductor Devices by : S. Selberherr
Download or read book Analysis and Simulation of Semiconductor Devices written by S. Selberherr and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 308 pages. Available in PDF, EPUB and Kindle. Book excerpt: The invention of semiconductor devices is a fairly recent one, considering classical time scales in human life. The bipolar transistor was announced in 1947, and the MOS transistor, in a practically usable manner, was demonstrated in 1960. From these beginnings the semiconductor device field has grown rapidly. The first integrated circuits, which contained just a few devices, became commercially available in the early 1960s. Immediately thereafter an evolution has taken place so that today, less than 25 years later, the manufacture of integrated circuits with over 400.000 devices per single chip is possible. Coincident with the growth in semiconductor device development, the literature concerning semiconductor device and technology issues has literally exploded. In the last decade about 50.000 papers have been published on these subjects. The advent of so called Very-Large-Scale-Integration (VLSI) has certainly revealed the need for a better understanding of basic device behavior. The miniaturization of the single transistor, which is the major prerequisite for VLSI, nearly led to a breakdown of the classical models of semiconductor devices.
Book Synopsis Modeling and Simulation in Engineering by : Jan Valdman
Download or read book Modeling and Simulation in Engineering written by Jan Valdman and published by BoD – Books on Demand. This book was released on 2020-12-09 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt: The general aim of this book is to present selected chapters of the following types: chapters with more focus on modeling with some necessary simulation details and chapters with less focus on modeling but with more simulation details. This book contains eleven chapters divided into two sections: Modeling in Continuum Mechanics and Modeling in Electronics and Engineering. We hope our book entitled "Modeling and Simulation in Engineering - Selected Problems" will serve as a useful reference to students, scientists, and engineers.
Book Synopsis Hyperbolic Problems: Theory, Numerics, Applications - Proceedings Of The Fifth International Conference by : James Glimm
Download or read book Hyperbolic Problems: Theory, Numerics, Applications - Proceedings Of The Fifth International Conference written by James Glimm and published by World Scientific. This book was released on 1996-03-14 with total page 510 pages. Available in PDF, EPUB and Kindle. Book excerpt: The intellectual center of this proceedings volume is the subject of conservation laws. Conservation laws are the most basic model of many continuum processes, and for this reason they govern the motion of fluids, solids, and plasma. They are basic to the understanding of more complex modeling issues, such as multiphase flow, chemically reacting flow, and non-equilibrium thermodynamics. Equations of this type also arise in novel and unexpected areas, such as the pattern recognition and image processing problem of edge enhancement and detection. The articles in this volume address the entire range of the study of conservation laws, including the fundamental mathematical theory, familiar and novel applications, and the numerical problem of finding effective computational algorithms for the solution of these problems.
Book Synopsis Hierarchical Device Simulation by : Christoph Jungemann
Download or read book Hierarchical Device Simulation written by Christoph Jungemann and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 278 pages. Available in PDF, EPUB and Kindle. Book excerpt: This monograph is the first on physics-based simulations of novel strained Si and SiGe devices. It provides an in-depth description of the full-band monte-carlo method for SiGe and discusses the common theoretical background of the drift-diffusion, hydrodynamic and Monte-Carlo models and their synergy.
Book Synopsis The Non-Equilibrium Green's Function Method for Nanoscale Device Simulation by : Mahdi Pourfath
Download or read book The Non-Equilibrium Green's Function Method for Nanoscale Device Simulation written by Mahdi Pourfath and published by Springer. This book was released on 2014-07-05 with total page 268 pages. Available in PDF, EPUB and Kindle. Book excerpt: For modeling the transport of carriers in nanoscale devices, a Green-function formalism is the most accurate approach. Due to the complexity of the formalism, one should have a deep understanding of the underlying principles and use smart approximations and numerical methods for solving the kinetic equations at a reasonable computational time. In this book the required concepts from quantum and statistical mechanics and numerical methods for calculating Green functions are presented. The Green function is studied in detail for systems both under equilibrium and under nonequilibrium conditions. Because the formalism enables rigorous modeling of different scattering mechanisms in terms of self-energies, but an exact evaluation of self-energies for realistic systems is not possible, their approximation and inclusion in the quantum kinetic equations of the Green functions are elaborated. All the elements of the kinetic equations, which are the device Hamiltonian, contact self-energies and scattering self-energies, are examined and efficient methods for their evaluation are explained. Finally, the application of these methods to study novel electronic devices such as nanotubes, graphene, Si-nanowires and low-dimensional thermoelectric devices and photodetectors are discussed.
Book Synopsis Bibliography of Scientific and Industrial Reports by :
Download or read book Bibliography of Scientific and Industrial Reports written by and published by . This book was released on 1970 with total page 922 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Heat Transfer Physics by : Massoud Kaviany
Download or read book Heat Transfer Physics written by Massoud Kaviany and published by Cambridge University Press. This book was released on 2014-02-10 with total page 795 pages. Available in PDF, EPUB and Kindle. Book excerpt: This graduate textbook describes atomic-level kinetics (mechanisms and rates) of thermal energy storage, transport (conduction, convection, and radiation), and transformation (various energy conversions) by principal energy carriers. The approach combines the fundamentals of molecular orbitals-potentials, statistical thermodynamics, computational molecular dynamics, quantum energy states, transport theories, solid-state and fluid-state physics, and quantum optics. The textbook presents a unified theory, over fine-structure/molecular-dynamics/Boltzmann/macroscopic length and time scales, of heat transfer kinetics in terms of transition rates and relaxation times, and its modern applications, including nano- and microscale size effects. Numerous examples, illustrations, and homework problems with answers that enhance learning are included. This new edition includes applications in energy conversion (including chemical bond, nuclear, and solar), expanded examples of size effects, inclusion of junction quantum transport, and discussion of graphene and its phonon and electronic conductances. New appendix coverage of Phonon Contributions Seebeck Coefficient and Monte Carlo Methods are also included.
Book Synopsis Discontinuous Galerkin Methods by : Bernardo Cockburn
Download or read book Discontinuous Galerkin Methods written by Bernardo Cockburn and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 468 pages. Available in PDF, EPUB and Kindle. Book excerpt: A class of finite element methods, the Discontinuous Galerkin Methods (DGM), has been under rapid development recently and has found its use very quickly in such diverse applications as aeroacoustics, semi-conductor device simula tion, turbomachinery, turbulent flows, materials processing, MHD and plasma simulations, and image processing. While there has been a lot of interest from mathematicians, physicists and engineers in DGM, only scattered information is available and there has been no prior effort in organizing and publishing the existing volume of knowledge on this subject. In May 24-26, 1999 we organized in Newport (Rhode Island, USA), the first international symposium on DGM with equal emphasis on the theory, numerical implementation, and applications. Eighteen invited speakers, lead ers in the field, and thirty-two contributors presented various aspects and addressed open issues on DGM. In this volume we include forty-nine papers presented in the Symposium as well as a survey paper written by the organiz ers. All papers were peer-reviewed. A summary of these papers is included in the survey paper, which also provides a historical perspective of the evolution of DGM and its relation to other numerical methods. We hope this volume will become a major reference in this topic. It is intended for students and researchers who work in theory and application of numerical solution of convection dominated partial differential equations. The papers were written with the assumption that the reader has some knowledge of classical finite elements and finite volume methods.
Book Synopsis Advances in Imaging and Electron Physics by : Peter W. Hawkes
Download or read book Advances in Imaging and Electron Physics written by Peter W. Hawkes and published by Elsevier. This book was released on 2005-07-15 with total page 358 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advances in Imaging and Electron Physics merges two long-running serials-Advances in Electronics and Electron Physics and Advances in Optical and Electron Microscopy. This series features extended articles on the physics of electron devices (especially semiconductor devices), particle optics at high and low energies, microlithography, image science and digital image processing, electromagnetic wave propagation, electron microscopy, and the computing methods used in all these domains.
