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Three To Five Compound Semiconductor Material Characterization Of Microstructures And Nanostructures On Various Optoelectronic Devices
Download Three To Five Compound Semiconductor Material Characterization Of Microstructures And Nanostructures On Various Optoelectronic Devices full books in PDF, epub, and Kindle. Read online Three To Five Compound Semiconductor Material Characterization Of Microstructures And Nanostructures On Various Optoelectronic Devices ebook anywhere anytime directly on your device. Fast Download speed and no annoying ads. We cannot guarantee that every ebooks is available!
Book Synopsis Three to Five Compound Semiconductor Material Characterization of Microstructures and Nanostructures on Various Optoelectronic Devices by : Wei Zhou
Download or read book Three to Five Compound Semiconductor Material Characterization of Microstructures and Nanostructures on Various Optoelectronic Devices written by Wei Zhou and published by . This book was released on 2004 with total page 386 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Semiconductor Nanostructures for Optoelectronic Devices by : Gyu-Chul Yi
Download or read book Semiconductor Nanostructures for Optoelectronic Devices written by Gyu-Chul Yi and published by Springer Science & Business Media. This book was released on 2012-01-13 with total page 347 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the fabrication of optoelectronic nanodevices. The structures considered are nanowires, nanorods, hybrid semiconductor nanostructures, wide bandgap nanostructures for visible light emitters and graphene. The device applications of these structures are broadly explained. The book deals also with the characterization of semiconductor nanostructures. It appeals to researchers and graduate students.
Book Synopsis Compound Semiconductors 2004 by : J.C. Woo
Download or read book Compound Semiconductors 2004 written by J.C. Woo and published by CRC Press. This book was released on 2005-04-01 with total page 548 pages. Available in PDF, EPUB and Kindle. Book excerpt: Compound Semiconductors 2004 was the 31st Symposium in this distinguished international series, held at Hoam Convention Center of Seoul National University, Seoul, Korea from September 12 to September 16, 2004. It attracted over 180 submissions from leading scientists in academic and industrial research institutions, and remains a major forum for the compound semiconductor research community since the first one held in 1966 at Edinburgh, UK under the name of 'International Symposium on Gallium Arsenide and related Compounds'. These proceedings provide an international perspective on the latest research and an overview of recent, important developments in III-V compounds, II-VI compounds and IV-IV compounds. In the total of 106 papers, notable progress was reported in the development of zinc oxide and spintronics. Steady advances were seen in traditional topics such as III-V based electronic and optoelectronic devices, growth and processing, and characterization. Novel research trends were observed in quantum structures, such as quantum wires and dots, which are promising for future developments in nanotechnology. As the primary forum for research into these materials and their device applications the book is an essential reference for researchers working on compound semiconductors in semiconductor physics, device physics, materials science, chemistry and electronic and electrical engineering.
Book Synopsis III-nitride Nanostructures for Optoelectronic and Magnetic Functionalities by : Thomas F. Kent
Download or read book III-nitride Nanostructures for Optoelectronic and Magnetic Functionalities written by Thomas F. Kent and published by . This book was released on 2014 with total page 224 pages. Available in PDF, EPUB and Kindle. Book excerpt: Over the last two decades, group III-nitride compound semiconductor materials have revolutionized modern optoelectronics and high frequency devices. In this work, III-nitride based compound semiconductor nanostructures with tailor-made optoelectronic and magnetic functionalities are investigated. The first research vector concerns design, synthesis and characterization of novel ferromagnetic materials based on III-nitrides involving manipulation of magnetic dopants as well as heteroepitaxy of ferromagnetic materials. Synthesis of III-nitride-GdN epitaxial, ferromagnetic nanocomposites is developed using the technique of plasma assisted molecular beam epitaxy. Magnetic, structural and optical characteristics of these materials are tailored to yield nanocomposites which preserve the structural and semiconducting characteristics of GaN while integrating the ferromagnetic compound GdN. In the second part of this work, the growth, characterization and development of self-assembled III-nitride nanowire based ultraviolet light emitting diodes is explored. These devices are formed by a novel heterostructure which utilizes synthetic gradients in dipole moment per unit volume to mitigate many of the shortcomings of traditional thin film wide bandgap light emitting diode (LED) device designs for deep ultraviolet wavelengths. The optical and electronic characteristics of these devices are investigated by a number of spectroscopic methods. Combination of this heterostructure with the epitaxy of GdN on III-nitrides is found to yield a unique electrical device which allows electrical modulation of narrow linewidth, ultraviolet Gd intra-f-shell fluorescence at significantly lower voltages compared to existing technology. During the course of this work, a number of unique scientific instruments were developed to aid research efforts in the Myers group. The design, construction and operation of a wide spectral bandwidth, ultrafast semiconductor photoluminescence characterization system, a spectroscopic probe station for high throughput measurements of deep ultraviolet LED's and a modified closed cycle He cryostat for magnetic field dependent low level optoelectronic measurements is described. The dissertation closes with a discussion of various collaborative works of the author as well as a broad summary, conclusions and suggested future directions.
Book Synopsis Characterization of Semiconductor Heterostructures and Nanostructures by : Giovanni Agostini
Download or read book Characterization of Semiconductor Heterostructures and Nanostructures written by Giovanni Agostini and published by Elsevier. This book was released on 2011-08-11 with total page 501 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the last couple of decades, high-performance electronic and optoelectronic devices based on semiconductor heterostructures have been required to obtain increasingly strict and well-defined performances, needing a detailed control, at the atomic level, of the structural composition of the buried interfaces. This goal has been achieved by an improvement of the epitaxial growth techniques and by the parallel use of increasingly sophisticated characterization techniques and of refined theoretical models based on ab initio approaches. This book deals with description of both characterization techniques and theoretical models needed to understand and predict the structural and electronic properties of semiconductor heterostructures and nanostructures. Comprehensive collection of the most powerful characterization techniques for semiconductor heterostructures and nanostructures Most of the chapters are authored by scientists that are among the top 10 worldwide in publication ranking of the specific field Each chapter starts with a didactic introduction on the technique The second part of each chapter deals with a selection of top examples highlighting the power of the specific technique to analyze the properties of semiconductors
Book Synopsis Compound Semiconductor Bulk Materials And Characterizations, Volume 2 by : Osamu Oda
Download or read book Compound Semiconductor Bulk Materials And Characterizations, Volume 2 written by Osamu Oda and published by World Scientific. This book was released on 2012-10-31 with total page 409 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is concerned with compound semiconductor bulk materials, and has been written for students, researchers and engineers in material science and device fabrication. It provides the elementary and intermediate knowledge of compound semiconductor bulk materials necessary for entry into this field. The first volume described the physical properties, crystal growth technologies, principles of crystal growth, various defects in crystals, characterization techniques and applications, and reviewed various III-V and II-V compound semiconductor materials. In this second volume, other materials are reviewed, including those that have recently received attention such as GaN, AlN, SiC and ZnO for optical and electronic devices.
Book Synopsis Fabrication and Characterization of III-V Compound Semiconductor Nanostructures by : Marlene Zander
Download or read book Fabrication and Characterization of III-V Compound Semiconductor Nanostructures written by Marlene Zander and published by . This book was released on 2012 with total page 114 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Dissertation Abstracts International by :
Download or read book Dissertation Abstracts International written by and published by . This book was released on 2005 with total page 860 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Photoemission from Optoelectronic Materials and their Nanostructures by : Kamakhya Prasad Ghatak
Download or read book Photoemission from Optoelectronic Materials and their Nanostructures written by Kamakhya Prasad Ghatak and published by Springer. This book was released on 2011-12-02 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: In recent years, with the advent of fine line lithographical methods, molecular beam epitaxy, organometallic vapour phase epitaxy and other experimental techniques, low dimensional structures having quantum confinement in one, two and three dimensions (such as ultrathin films, inversion layers, accumulation layers, quantum well superlattices, quantum well wires, quantum wires superlattices, magneto-size quantizations, and quantum dots) have attracted much attention not only for their potential in uncovering new phenomena in nanoscience and technology, but also for their interesting applications in the areas of quantum effect devices. In ultrathin films, the restriction of the motion of the carriers in the direction normal to the film leads to the quantum size effect and such systems find extensive applications in quantum well lasers, field effect transistors, high speed digital networks and also in other quantum effect devices. In quantum well wires, the carriers are quantized in two transverse directions and only one-dimensional motion of the carriers is allowed.
Book Synopsis Nanoscale Compound Semiconductors and Their Optoelectronics Applications by : Vijay B. Pawade
Download or read book Nanoscale Compound Semiconductors and Their Optoelectronics Applications written by Vijay B. Pawade and published by Elsevier. This book was released on 2022-01-24 with total page 460 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanoscale Compound Semiconductors and their Optoelectronics Applications provides the basic and fundamental properties of nanoscale compound semiconductors and their role in modern technological products. The book discusses all important properties of this important category of materials such as their optical properties, size-dependent properties, and tunable properties. Key methods are reviewed, including synthesis techniques and characterization strategies. The role of compound semiconductors in the advancement of energy efficient optoelectronics and solar cell devices is also discussed. The book also touches on the photocatalytic property of the materials by doping with graphene oxides--an emerging and new pathway. Covers all relevant types of nanoscale compound semiconductors for optoelectronics, including their synthesis, properties and applications Provides historical context and review of emerging trends in semiconductor technology, particularly emphasizing advances in non-toxic semiconductor materials for green technologies Reviews emerging applications of nanoscale compound semiconductor-based devices in optoelectronics, energy and environmental sustainability
Book Synopsis Compound Semiconductor Bulk Materials and Characterizations by : Osamu Oda
Download or read book Compound Semiconductor Bulk Materials and Characterizations written by Osamu Oda and published by World Scientific Publishing Company. This book was released on 2012 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is concerned with compound semiconductor bulk materials, and has been written for students, researchers and engineers in material science and device fabrication. It provides the elementary and intermediate knowledge of compound semiconductor bulk materials necessary for entry into this field. The first volume described the physical properties, crystal growth technologies, principles of crystal growth, various defects in crystals, characterization techniques and applications, and reviewed various III-V and II-V compound semiconductor materials. In this second volume, other materials are reviewed, including those that have recently received attention such as GaN, AlN, SiC and ZnO for optical and electronic devices.
Book Synopsis Characterization of III-V Compound Semiconductor Device Materials by : Donald C. Reynolds
Download or read book Characterization of III-V Compound Semiconductor Device Materials written by Donald C. Reynolds and published by . This book was released on 1984 with total page 41 pages. Available in PDF, EPUB and Kindle. Book excerpt: The objective of this task has been the electrical, optical, and magneto-optical characterization of the intrinsic and extrinsic properties of compound semi-conductors, primarily from the III-V group of materials. Photoluminescent techniques were used to identify both the intrinsic and extrinsic properties of the materials. Intrinsic properties such as energy band gaps, effective mass parameters, refractive indices, dielectric functions, exciton binding energies, and lattice vibration frequencies were determined. Extrinsic properties including activation energies of foreign impurities, binding energy of excitons to foreign impurities and the energies of complexes were established. Transport measurements were used to measure carrier mobilities and electrical conductivity as well as carrier concentrations. These measurements as a function of temperature make it possible to determine the number of donors and the number of acceptors and therefore the compensation ratio in the material. Local vibrational mode spectroscopy was used as a characterization tool to identify specific impurities such as C and Si in GaAs. From the vibrational energy the site location of the impurity can be determined. These characterization techniques have been very successful in evaluating the quality of materials and have been very helpful to the crystal growing programs which has been successful in growing very high quality materials.
Book Synopsis Characterization of III-V Compound Semiconductor Device Materials by : D. C. Reynolds
Download or read book Characterization of III-V Compound Semiconductor Device Materials written by D. C. Reynolds and published by . This book was released on 1980 with total page 35 pages. Available in PDF, EPUB and Kindle. Book excerpt: The objective of this task has been the electrical, optical, and magneto-optical characterization of the intrinsic and extrinsic properties of compound semiconductors, primarily from the III-V group of materials. Photoluminescent techniques were used to identify both the intrinsic and extrinsic properties of the materials. Intrinsic properties such as energy band gaps, effective mass parameters, refractive indices, dielectric functions, exciton binding energies and lattice vibration frequencies were determined. Extrinsic properties including activation energies of foreign impurities, binding energy of excitons to foreign impurities and the energies of complexes were established. Transport measurements were used to measure carrier mobilities and electrical conductivity as well as carrier concentrations. These measurements as a function of temperature make it possible to determine the number of donors (N sub D) and the number of acceptors (N sub A) and therefore the compensation ratio in the material. Local vibrational mode spectroscopy was used as a characterization tool to identify specific impurities such as C and Si in GaAs. From the vibrational energy the site location of the impurity can be determined. These characterization techniques have been very successful in evaluating the quality of materials and have been very helpful to the crystal growing program which has been successful in growing very high quality materials. (Author).
Book Synopsis Growth and Characterization of III-V Compound Semiconductor Materials for Use in Novel MODFET Structures and Related Devices by : Donald W. Schulte
Download or read book Growth and Characterization of III-V Compound Semiconductor Materials for Use in Novel MODFET Structures and Related Devices written by Donald W. Schulte and published by . This book was released on 1995 with total page 228 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Growth and Characterization of III-V Compound Semiconductor Nanostructures by Metalorganic Chemical Vapor Deposition by : Ryan S. Dowdy
Download or read book Growth and Characterization of III-V Compound Semiconductor Nanostructures by Metalorganic Chemical Vapor Deposition written by Ryan S. Dowdy and published by . This book was released on 2010 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Planar 110 GaAs nanowires and quantum dots grown by atmospheric MOCVD have been introduced to non-standard growth conditions such as incorporating Zn and growing them on free-standing suspended films and on 10° off-cut substrates. Zn doped nanowires exhibited periodic notching along the axis of the wire that is dependent on Zn/Ga gas phase molar ratios. Planar nanowires grown on suspended thin films give insight into the mobility of the seed particle and change in growth direction. Nanowires that were grown on the off-cut sample exhibit anti-parallel growth direction changes. Quantum dots are grown on suspended thin films and show preferential growth at certain temperatures. Envisioned nanowire applications include twin-plane superlattices, axial pn-junctions, nanowire lasers, and the modulation of nanowire growth direction against an impeding barrier and varying substrate conditions.
Book Synopsis Compound Semiconductors 2001 by : Y Arakawa
Download or read book Compound Semiconductors 2001 written by Y Arakawa and published by CRC Press. This book was released on 2002-09-30 with total page 855 pages. Available in PDF, EPUB and Kindle. Book excerpt: An international perspective on recent research, Compound Semiconductors 2001 provides an overview of important developments in III-V compound semiconductors, such as GaAs, InP, and GaN; II-VI compounds, such as ZnSe and CdTe; and IV-IV compounds, such as SiC and SiGe. The book contains 139 papers arranged in chapters on electronic devices, optical devices, magnetic materials, novel systems, quantum transport, optical characterization, quantum nanostructures, and material growth and characterization. The content encompasses the development of optical and electronic devices based on nitride semiconductors as well as the steady advances in traditional topics like III-V-based electronic and optical devices, growth and processing, and characterization. The book also includes novel research trends in quantum structures, such as quantum wires and dots, and spintronics, which are very promising for future developments in nanotechnology. As the primary forum for research into these materials and their device applications, this resource is an essential reference for researchers working on compound semiconductors in semiconductor physics, device physics, materials science, chemistry, and electronic and electrical engineering.
Book Synopsis Photonics Technology Into the 21st Century by : Seng Tiong Ho
Download or read book Photonics Technology Into the 21st Century written by Seng Tiong Ho and published by SPIE-International Society for Optical Engineering. This book was released on 1999 with total page 574 pages. Available in PDF, EPUB and Kindle. Book excerpt: These papers take a look at the field of photonics and trends in the development of the technology of the field at the turn of the 21st century.
