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The Ultra Vacuum Scanning Tunneling Microscope Applied To Semiconductor Surfaces
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Book Synopsis The Ultra Vacuum Scanning Tunneling Microscope Applied to Semiconductor Surfaces by : Leonard David Bruce Broekman
Download or read book The Ultra Vacuum Scanning Tunneling Microscope Applied to Semiconductor Surfaces written by Leonard David Bruce Broekman and published by . This book was released on 1996 with total page 470 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Probing Silicon Based Molecular Electronics with Ultrahigh Vacuum Scanning Tunneling Microscopy by : Nathan Paul Guisinger
Download or read book Probing Silicon Based Molecular Electronics with Ultrahigh Vacuum Scanning Tunneling Microscopy written by Nathan Paul Guisinger and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: A variable temperature ultra-high vacuum (UHV) scanning tunneling microscope (STM) is utilized for measuring the electrical properties of isolated organic molecules adsorbed to the degenerately doped n- and p-type silicon surfaces at room temperature and 80 K. Current-voltage curves taken under these conditions show negative differential resistance (NDR) at positive sample bias for p-type doping and negative bias for n-type doping. These results qualitatively agree with a theoretical model proposed by Supriyo Datta (Purdue University). Due to the enhanced stability of the STM at cryogenic temperatures, repeated measurements can be routinely taken over the same molecule. Taking advantage of this improved stability, current-voltage curves on isolated cyclopentene molecules are demonstrated to be repeatable and possess negligible hysteresis for a given tip-molecule distance. On the other hand, subsequent measurements with variable tip position show that the NDR voltage increases with increasing tip-molecule distance. Using a one-dimensional capacitive equivalent circuit and a resonant tunneling model, this behavior can be quantitatively explained, thus providing insight into the electrostatic potential distribution across a semiconductor-molecule-vacuum-metal tunnel junction. This model also provides a quantitative estimate for the alignment of the highest occupied molecular orbital (HOMO) of cyclopentene with respect to the Fermi level of the silicon substrate, thus suggesting that this experimental approach can be used for performing chemical spectroscopy at the single molecule level on semiconductor surfaces. Overall, these results serve as the basis for a series of design rules that can be applied to silicon-based molecular electronic devices.
Book Synopsis Scanning Tunneling Microscopy and Its Application by : Chunli Bai
Download or read book Scanning Tunneling Microscopy and Its Application written by Chunli Bai and published by Springer Science & Business Media. This book was released on 2000-08-10 with total page 392 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents a unified view of the rapidly growing field of scanning tunneling microscopy and its many derivatives. After examining novel scanning-probe techniques and the instrumentation and methods, the book provides detailed accounts of STM applications. It examines limitations of the present-day investigations and provides insight into further trends. "I strongly recommend that Professor Bai's book be a part of any library that serves surface scientists, biochemists, biophysicists, material scientists, and students of any science or engineering field...There is no doubt that this is one of the better (most thoughtful) texts." Journal of the American Chemical Society (Review of 1/e)
Book Synopsis Scanning Probe Microscopy and Spectroscopy by : Roland Wiesendanger
Download or read book Scanning Probe Microscopy and Spectroscopy written by Roland Wiesendanger and published by Cambridge University Press. This book was released on 1994-09-29 with total page 664 pages. Available in PDF, EPUB and Kindle. Book excerpt: The investigation and manipulation of matter on the atomic scale have been revolutionised by scanning tunnelling microscopy and related scanning probe techniques. This book is the first to provide a clear and comprehensive introduction to this subject. Beginning with the theoretical background of scanning tunnelling microscopy, the design and instrumentation of practical STM and associated systems are described in detail, as are the applications of these techniques in fields such as condensed matter physics, chemistry, biology, and nanotechnology. Containing 350 illustrations, and over 1200 references, this unique book represents an ideal introduction to the subject for final-year undergraduates in physics or materials science. It will also be invaluable to graduate students and researchers in any branch of science where scanning probe techniques are used.
Book Synopsis Scanning Tunneling Microscopy of Silicon(100) 2 X 1 by : Jerome S. Hubacek
Download or read book Scanning Tunneling Microscopy of Silicon(100) 2 X 1 written by Jerome S. Hubacek and published by . This book was released on 1992 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The Si(100) 2 x 1 surface, a technologically important surface in microelectronics and silicon molecular beam epitaxy (MBE), has been studied with the scanning tunneling microscope (STM) to attempt to clear up the controversy that surrounds previous studies of this surface. To this end, an ultra-high vacuum (UHV) STM/surface science system has been designed and constructed to study semiconductor surfaces. Clean Si(100) 2 x 1 surfaces have been prepared and imaged with the STM. Atomic resolution images probing both the filled states and empty states indicate that the surface consists of statically buckled dimer rows. With electronic device dimensions shrinking to smaller and smaller sizes, the Si-SiO$sb2$ interface is becoming increasingly important and, although it is the most popular interface used in the microelectronics industry, little is known about the initial stages of oxidation of the Si(100) surface. Scanning tunneling microscopy has been employed to examine Si(100) 2 x 1 surfaces exposed to molecular oxygen in UHV. Ordered rows of bright and dark spots, rotated 45$spcirc$ from the silicon dimer rows, appear in the STM images, suggesting that the Si(100)-SiO$sb2$ interface may be explained with a $beta$-cristobalite(100) structure rotated by 45$spcirc$ on the Si(100) surface.
Book Synopsis Introduction to Scanning Tunneling Microscopy Third Edition by : C. Julian Chen
Download or read book Introduction to Scanning Tunneling Microscopy Third Edition written by C. Julian Chen and published by Oxford University Press. This book was released on 2021-03-04 with total page 523 pages. Available in PDF, EPUB and Kindle. Book excerpt: The scanning tunnelling microscope (STM) was invented by Binnig and Rohrer and received a Nobel Prize of Physics in 1986. Together with the atomic force microscope (AFM), it provides non-destructive atomic and subatomic resolution on surfaces. Especially, in recent years, internal details of atomic and molecular wavefunctions are observed and mapped with negligible disturbance. Since the publication of its first edition, this book has been the standard reference book and a graduate-level textbook educating several generations of nano-scientists. In Aug. 1992, the co-inventor of STM, Nobelist Heinrich Rohrer recommended: "The Introduction to Scanning tunnelling Microscopy by C.J. Chen provides a good introduction to the field for newcomers and it also contains valuable material and hints for the experts". For the second edition, a 2017 book review published in the Journal of Applied Crystallography said "Introduction to Scanning tunnelling Microscopy is an excellent book that can serve as a standard introduction for everyone that starts working with scanning probe microscopes, and a useful reference book for those more advanced in the field". The third edition is a thoroughly updated and improved version of the recognized "Bible" of the field. Additions to the third edition include: theory, method, results, and interpretations of the non-destructive observation and mapping of atomic and molecular wavefunctions; elementary theory and new verifications of equivalence of chemical bond interaction and tunnelling; scanning tunnelling spectroscopy of high Tc superconductors; imaging of self-assembled organic molecules on the solid-liquid interfaces. Some key derivations are rewritten using mathematics at an undergraduate level to make it pedagogically sound.
Author :Hans-Joachim Güntherodt Publisher :Springer Science & Business Media ISBN 13 :3642973434 Total Pages :252 pages Book Rating :4.6/5 (429 download)
Book Synopsis Scanning Tunneling Microscopy I by : Hans-Joachim Güntherodt
Download or read book Scanning Tunneling Microscopy I written by Hans-Joachim Güntherodt and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 252 pages. Available in PDF, EPUB and Kindle. Book excerpt: Scanning Tunneling Microscopy I provides a unique introduction to a novel and fascinating technique that produces beautiful images of nature on an atomic scale. It is the first of three volumes that together offer a comprehensive treatment of scanning tunneling microscopy, its diverse applications, and its theoretical treatment. In this volume the reader will find a detailed description of the technique itself and of its applications to metals, semiconductors, layered materials, adsorbed molecules and superconductors. In addition to the many representative results reviewed, extensive references to original work will help to make accessible the vast body of knowledge already accumulated in this field.
Book Synopsis Scanning Tunneling Microscopy by : Joseph A. Stroscio
Download or read book Scanning Tunneling Microscopy written by Joseph A. Stroscio and published by Academic Press. This book was released on 2013-10-22 with total page 481 pages. Available in PDF, EPUB and Kindle. Book excerpt: Scanning tunneling microscopy (STM) and its extensions have become revolutionary tools in the fields of physics, materials science, chemistry, and biology. These new microscopies have evolved from their beginnings asresearch aids to their current use as commercial tools in the laboratory and on the factory floor. New wonders continue to unfold as STM delivers atomic scale imaging and electrical characterization of the newly emerging nanometer world. This volume in the METHODS OF EXPERIMENTAL PHYSICS Series describes the basics of scanning tunneling microscopy, provides a fundamental theoretical understanding of the technique and a thorough description of the instrumentation, and examines numerous examples and applications. Written by the pioneers of the field, this volume is an essential handbook for researchers and users of STM, as well as a valuable resource for libraries.
Book Synopsis Development of an Ultra High Vacuum Scanning Tunneling Microscope by : Marc Fouchier
Download or read book Development of an Ultra High Vacuum Scanning Tunneling Microscope written by Marc Fouchier and published by . This book was released on 2000 with total page 362 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Defect Control in Semiconductors by : K. Sumino
Download or read book Defect Control in Semiconductors written by K. Sumino and published by Elsevier. This book was released on 2012-12-02 with total page 817 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defect control in semiconductors is a key technology for realizing the ultimate possibilities of modern electronics. The basis of such control lies in an integrated knowledge of a variety of defect properties. From this viewpoint, the volume discusses defect-related problems in connection with defect control in semiconducting materials, such as silicon, III-V, II-VI compounds, organic semiconductors, heterostructure, etc.The conference brought together scientists in the field of fundamental research and engineers involved in application related to electronic devices in order to promote future research activity in both fields and establish a fundamental knowledge of defect control. The main emphasis of the 254 papers presented in this volume is on the control of the concentration, distribution, structural and electronic states of any types of defects including impurities as well as control of the electrical, optical and other activities of defects. Due to the extensive length of the contents, only the number of papers presented per session is listed below.
Book Synopsis Scanning Tunneling Microscopy of Semiconductor Surfaces by : J. A. Kubby
Download or read book Scanning Tunneling Microscopy of Semiconductor Surfaces written by J. A. Kubby and published by . This book was released on 1996 with total page 144 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Comprehensive Semiconductor Science and Technology by :
Download or read book Comprehensive Semiconductor Science and Technology written by and published by Newnes. This book was released on 2011-01-28 with total page 3572 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts
Book Synopsis Advances in Scanning Probe Microscopy by : T. Sakurai
Download or read book Advances in Scanning Probe Microscopy written by T. Sakurai and published by Springer. This book was released on 2000-03-27 with total page 362 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is a comprehensive presentation of the current knowledge on the electronic properties and manipulation of semiconductor surfaces. This book covers several of the most important and timely topics at the forefront of scanning probe microscopy, such as atom-resolving atomic force microscopy (AFM), application of atom manipulation for fabricating nanoscale and atomic scale structures, theoretical insights into Fullerenes, and atomic manipulation for future single-electron devices.
Download or read book 最近四ヵ年実践女子大学入試問題の研究 written by and published by . This book was released on 1976 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Scanning Tunneling Microscopy II by : Roland Wiesendanger
Download or read book Scanning Tunneling Microscopy II written by Roland Wiesendanger and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 316 pages. Available in PDF, EPUB and Kindle. Book excerpt: Scanning Tunneling Microscopy II, like its predecessor, presents detailed and comprehensive accounts of the basic principles and broad range of applications of STM and related scanning probe techniques. The applications discussed in this volume come predominantly from the fields of electrochemistry and biology. In contrast to those described in Vol. I, these sudies may be performed in air and in liquids. The extensions of the basic technique to map other interactions are described inchapters on scanning force microscopy, magnetic force microscopy, scanning near-field optical microscopy, together with a survey of other related techniques. Also described here is the use of a scanning proximal probe for surface modification. Togehter, the two volumes give a comprehensive account of experimental aspcets of STM. They provide essentialreading and reference material for all students and researchers involvedin this field.
Book Synopsis Scanning Tunneling Microscopy and Related Methods by : R.J. Behm
Download or read book Scanning Tunneling Microscopy and Related Methods written by R.J. Behm and published by Springer Science & Business Media. This book was released on 2013-03-09 with total page 516 pages. Available in PDF, EPUB and Kindle. Book excerpt: Proceedings of the NATO Advanced Study Institute on Basic Concepts and Applications of Scanning Tunneling Microscopy, Erice, Italy, April 17-29, 1989
Book Synopsis Scanning Tunneling Microscopy I by : Hans-Joachim Güntherodt
Download or read book Scanning Tunneling Microscopy I written by Hans-Joachim Güntherodt and published by Springer. This book was released on 2012-02-16 with total page 246 pages. Available in PDF, EPUB and Kindle. Book excerpt: Scanning Tunneling Microscopy I provides a unique introduction to a novel and fascinating technique that produces beautiful images of nature on an atomic scale. It is the first of three volumes that together offer a comprehensive treatment of scanning tunneling microscopy, its diverse applications, and its theoretical treatment. In this volume the reader will find a detailed description of the technique itself and of its applications to metals, semiconductors, layered materials, adsorbed molecules and superconductors. In addition to the many representative results reviewed, extensive references to original work will help to make accessible the vast body of knowledge already accumulated in this field.
