The Properties of SiC Barrier Diodes Fabricated with Ti Schottky Contacts

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Publisher :
ISBN 13 :
Total Pages : 142 pages
Book Rating : 4.:/5 (1 download)

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Book Synopsis The Properties of SiC Barrier Diodes Fabricated with Ti Schottky Contacts by : Krishna Chaitanya Kundeti

Download or read book The Properties of SiC Barrier Diodes Fabricated with Ti Schottky Contacts written by Krishna Chaitanya Kundeti and published by . This book was released on 2017 with total page 142 pages. Available in PDF, EPUB and Kindle. Book excerpt: Titanium (Ti) is a popular metal contact used in fabricating Schottky barrier diodes on silicon carbide (SiC) semiconductor. In this research, Ti/4H-SiC Schottky barrier diodes have been fabricated to investigate the effect of deposition temperature and annealing on the electrical characteristics of the fabricated devices. The parameters such as barrier height, ideality factor and on-resistance were determined from the current-voltage (I-V) and the capacitance-voltage (C-V) measurements at room temperature. The temperature-dependent electrical characteristics are realized by performing current-voltage-temperature (I-V-T) measurements. Furthermore, the material characterizations were performed using Auger Electron Spectroscopy (AES) and x-ray diffraction (XRD) measurements. Thin films of Titanium (Ti) as Schottky contacts were deposited on n-type 4H-SiC substrate by magnetron sputtering at different temperatures form room temperature ~25 °C to 900 °C. In addition, thermal processing was performed by annealing at 500 °C in vacuum and argon environment up to 60 hours and characterized using I-V, C-V, and I-V-T measurements accordingly. The diodes with Ti deposited at 200 °C yield better devices with an average ideality factor of 1.04 and Schottky barrier height of 1.13 eV. The electrical properties shows that the deposition of Schottky contact should be at least below 700 °C and the Schottky contact should be annealed at 500 °C for 12-36 hours in order to obtain acceptable quality of Schottky diode. We believe that these variations in the electrical properties are due to the change in the quality of interfacial layer. The variations in physical/compositional properties of Ti/SiC interface has been investigated using Auger electron spectroscopy and x-ray diffraction, which reveled mainly two kinds of phases: Ti5Si3 and Ti3SiC2 formed at the interfacial layer.

Advancing Silicon Carbide Electronics Technology I

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Publisher : Materials Research Forum LLC
ISBN 13 : 1945291850
Total Pages : 249 pages
Book Rating : 4.9/5 (452 download)

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Book Synopsis Advancing Silicon Carbide Electronics Technology I by : Konstantinos Zekentes

Download or read book Advancing Silicon Carbide Electronics Technology I written by Konstantinos Zekentes and published by Materials Research Forum LLC. This book was released on 2018-09-20 with total page 249 pages. Available in PDF, EPUB and Kindle. Book excerpt: The rapidly advancing Silicon Carbide technology has a great potential in high temperature and high frequency electronics. High thermal stability and outstanding chemical inertness make SiC an excellent material for high-power, low-loss semiconductor devices. The present volume presents the state of the art of SiC device fabrication and characterization. Topics covered include: SiC surface cleaning and etching techniques; electrical characterization methods and processing of ohmic contacts to silicon carbide; analysis of contact resistivity dependence on material properties; limitations and accuracy of contact resistivity measurements; ohmic contact fabrication and test structure design; overview of different metallization schemes and processing technologies; thermal stability of ohmic contacts to SiC, their protection and compatibility with device processing; Schottky contacts to SiC; Schottky barrier formation; Schottky barrier inhomogeneity in SiC materials; technology and design of 4H-SiC Schottky and Junction Barrier Schottky diodes; Si/SiC heterojunction diodes; applications of SiC Schottky diodes in power electronics and temperature/light sensors; high power SiC unipolar and bipolar switching devices; different types of SiC devices including material and technology constraints on device performance; applications in the area of metal contacts to silicon carbide; status and prospects of SiC power devices.

Electrical Properties of Molybdenum Silicon Carbide Schottky Barrier Diodes

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ISBN 13 :
Total Pages : 126 pages
Book Rating : 4.:/5 (112 download)

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Book Synopsis Electrical Properties of Molybdenum Silicon Carbide Schottky Barrier Diodes by : Sai Bhargav Naredla

Download or read book Electrical Properties of Molybdenum Silicon Carbide Schottky Barrier Diodes written by Sai Bhargav Naredla and published by . This book was released on 2019 with total page 126 pages. Available in PDF, EPUB and Kindle. Book excerpt: Molybdenum (Mo) is one of the metals categorized as refractory metal due to its thermal properties. For that reason, it is very attractive for high-temperature applications. This thesis covers the investigation of silicon carbide (SiC) Schottky diodes fabricated using Mo as the Schottky contact. The Mo Schottky contacts were deposited using magnetron sputtering on the n-type 4H-SiC. The temperature of the SiC substrates was varied from 25 °C to 900 °C. The electrical properties of the diodes were determined by current-voltage, capacitance-voltage and current-voltage-temperature measurements. Structural properties of Schottky contacts deposited at different temperatures were also characterized using x-ray diffraction spectroscopy. The results obtained reveal that the as-deposited diodes had energy barrier heights that ranged from 1.02 to 1.67 eV and ideality factors varying from 1.04 to 1.23. Contacts deposited at 600 °C produced the optimum property consisting of a barrier height of 1.34 eV and ideality factor of 1.05. The diodes were further thermally processed by keeping them exposed to 500 °C for 24 hours diodes in vacuum. From these, the barrier height ranging from 1.00 eV to 1.70 eV was obtained. The variation in electrical properties is explained as due to changes in crystal quality. Current-voltage temperature measurements to further characterize the electrical properties of diodes at different temperatures were performed. Contacts deposited at 500°C produced the largest Richardson's constant (A**) of 3.74 A/K-cm2 and a barrier height of 1.32 eV. Changes in ideality factors and barrier heights are observed due to the formation of interfacial silicide layers. X-ray diffraction results show the formation of MoSi2 and Mo5Si2

Properties of Silicon Carbide

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Author :
Publisher : IET
ISBN 13 : 9780852968703
Total Pages : 312 pages
Book Rating : 4.9/5 (687 download)

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Book Synopsis Properties of Silicon Carbide by : Gary Lynn Harris

Download or read book Properties of Silicon Carbide written by Gary Lynn Harris and published by IET. This book was released on 1995 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt: This well structured and fully indexed book helps to understand and fully characterize the SiC system.

SiC Materials and Devices

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Publisher : Academic Press
ISBN 13 : 0080864503
Total Pages : 435 pages
Book Rating : 4.0/5 (88 download)

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Book Synopsis SiC Materials and Devices by :

Download or read book SiC Materials and Devices written by and published by Academic Press. This book was released on 1998-07-02 with total page 435 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume addresses the subject of materials science, specifically the materials aspects, device applications, and fabricating technology of SiC.

Physics and Technology of Silicon Carbide Devices

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Publisher :
ISBN 13 : 9781681176437
Total Pages : 284 pages
Book Rating : 4.1/5 (764 download)

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Book Synopsis Physics and Technology of Silicon Carbide Devices by : George Gibbs

Download or read book Physics and Technology of Silicon Carbide Devices written by George Gibbs and published by . This book was released on 2016-10-01 with total page 284 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon (Si) is by far the most widely used semiconductor material for power devices. On the other hand, Si-based power devices are approaching their material limits, which has provoked a lot of efforts to find alternatives to Si-based power devices for better performance. With the rapid innovations and developments in the semiconductor industry, Silicon Carbide (SiC) power devices have progressed from immature prototypes in laboratories to a viable alternative to Si-based power devices in high-efficiency and high-power density applications. SiC devices have numerous persuasive advantages--high-breakdown voltage, high-operating electric field, high-operating temperature, high-switching frequency and low losses. Silicon Carbide (SiC) devices belong to the so-called wide band gap semiconductor group, which offers a number of attractive characteristics for high voltage power semiconductors when compared to commonly used silicon (Si). Recently, some SiC power devices, for example, Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effecttransistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. Physics and Technology of Silicon Carbide Devices abundantly describes recent technologies on manufacturing, processing, characterization, modeling, etc. for SiC devices.

Improved SiC Schottky Barrier Diodes Using Refractory Metal Borides

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Publisher :
ISBN 13 :
Total Pages : 134 pages
Book Rating : 4.:/5 (526 download)

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Book Synopsis Improved SiC Schottky Barrier Diodes Using Refractory Metal Borides by : Rani S. Kummari

Download or read book Improved SiC Schottky Barrier Diodes Using Refractory Metal Borides written by Rani S. Kummari and published by . This book was released on 2009 with total page 134 pages. Available in PDF, EPUB and Kindle. Book excerpt: This research demonstrates how the deposition temperature of Schottky contacts on 4H-SiC affects the electrical and thermal properties of a Schottky diode. Several refractory metal borides are investigated for the contacts which are deposited at room temperature (20 °C) and high temperature (600 °C). The electrical properties of the diodes are characterized by using current-voltage (I-V) and capacitance-voltage (C-V) measurements. Thermal properties are investigated by using rapid thermal processor (RTP). Schottky contacts which are deposited at 600 °C produced better Schottky diodes with smaller ideality factors from 1.05 to 1.10), barrier heights from 0.94 to 1.15 eV, smaller resistances, and smaller current density in reverse bias conditions when compared to the contacts deposited at room temperature. These values remained stable after annealing in RTP at 600 °C for 20 minutes. The improved electrical properties and thermal stability of the diodes with contacts deposited at 600 °C are related to the removal of O2 from the boride/SiC interface, as revealed by the Rutherford backscattering spectroscopy (RBS) analysis. These results indicate improved electrical and thermal properties of boride/SiC Schottky contacts, making them attractive for high temperature applications.

Metal-Semiconductor Schottky Barrier Junctions and Their Applications

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Publisher : Springer Science & Business Media
ISBN 13 : 146844655X
Total Pages : 379 pages
Book Rating : 4.4/5 (684 download)

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Book Synopsis Metal-Semiconductor Schottky Barrier Junctions and Their Applications by : B.L. Sharma

Download or read book Metal-Semiconductor Schottky Barrier Junctions and Their Applications written by B.L. Sharma and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 379 pages. Available in PDF, EPUB and Kindle. Book excerpt: The present-day semiconductor technology would be inconceivable without extensive use of Schottky barrier junctions. In spite of an excellent book by Professor E.H. Rhoderick (1978) dealing with the basic principles of metal semiconductor contacts and a few recent review articles, the need for a monograph on "Metal-Semiconductor Schottky Barrier Junctions and Their Applications" has long been felt by students, researchers, and technologists. It was in this context that the idea of publishing such a monograph by Mr. Ellis H. Rosenberg, Senior Editor, Plenum Publishing Corporation, was considered very timely. Due to the numerous and varied applications of Schottky barrier junctions, the task of bringing it out, however, looked difficult in the beginning. After discussions at various levels, it was deemed appropriate to include only those typical applications which were extremely rich in R&D and still posed many challenges so that it could be brought out in the stipulated time frame. Keeping in view the larger interest, it was also considered necessary to have the different topics of Schottky barrier junctions written by experts.

The Gospel According to Saint Luke in the Text of the Authorised Version

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Publisher :
ISBN 13 :
Total Pages : 111 pages
Book Rating : 4.:/5 (5 download)

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Book Synopsis The Gospel According to Saint Luke in the Text of the Authorised Version by :

Download or read book The Gospel According to Saint Luke in the Text of the Authorised Version written by and published by . This book was released on 1952 with total page 111 pages. Available in PDF, EPUB and Kindle. Book excerpt:

SiC Materials and Devices

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Publisher : World Scientific
ISBN 13 : 9812773371
Total Pages : 342 pages
Book Rating : 4.8/5 (127 download)

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Book Synopsis SiC Materials and Devices by : Michael Shur

Download or read book SiC Materials and Devices written by Michael Shur and published by World Scientific. This book was released on 2006 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt: After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices OCo power switching Schottky diodes and high temperature MESFETs OCo are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology. Contents: SiC Material Properties (G Pensl et al.); SiC Homoepitaxy and Heteroepitaxy (A S Bakin); Ohmic Contacts to SiC (F Roccaforte et al.); Silicon Carbide Schottky Barrier Diode (J H Zhao et al.); High Power SiC PiN Rectifiers (R Singh); Silicon Carbide Diodes for Microwave Applications (K Vassilevski); SiC Thyristors (M E Levinshtein et al.); Silicon Carbide Static Induction Transistors (G C DeSalvo). Readership: Technologists, scientists, engineers and graduate students working on silicon carbide or other wide band gap materials and devices."

Some Properties of Near-ideal Schottky Barrier Diodes

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Publisher :
ISBN 13 :
Total Pages : 80 pages
Book Rating : 4.:/5 (26 download)

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Book Synopsis Some Properties of Near-ideal Schottky Barrier Diodes by : Peter Gutknecht

Download or read book Some Properties of Near-ideal Schottky Barrier Diodes written by Peter Gutknecht and published by . This book was released on 1972 with total page 80 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Advances in Nanomaterials and Processing

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Publisher : Trans Tech Publications Ltd
ISBN 13 : 3038131393
Total Pages : 1985 pages
Book Rating : 4.0/5 (381 download)

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Book Synopsis Advances in Nanomaterials and Processing by : Byung Tae Ahn

Download or read book Advances in Nanomaterials and Processing written by Byung Tae Ahn and published by Trans Tech Publications Ltd. This book was released on 2007-06-15 with total page 1985 pages. Available in PDF, EPUB and Kindle. Book excerpt: This extensive collection of papers presents new results focussing on advanced nanomaterials and their processing. Volume is indexed by Thomson Reuters CPCI-S (WoS). Over 460 papers have been selected, for this special issue, covering three main fields: Electronic Materials Processing and Fabrication, Development of Functional Materials, and Nano and Structural Materials., These are the essential foundations of the NanoMaterials currently undergoing research and development.

Sic Materials And Devices - Volume 1

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Publisher : World Scientific
ISBN 13 : 981447777X
Total Pages : 342 pages
Book Rating : 4.8/5 (144 download)

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Book Synopsis Sic Materials And Devices - Volume 1 by : Sergey Rumyantsev

Download or read book Sic Materials And Devices - Volume 1 written by Sergey Rumyantsev and published by World Scientific. This book was released on 2006-07-25 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt: After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices — power switching Schottky diodes and high temperature MESFETs — are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology.

Fundamentals of Silicon Carbide Technology

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Publisher : John Wiley & Sons
ISBN 13 : 1118313526
Total Pages : 565 pages
Book Rating : 4.1/5 (183 download)

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Book Synopsis Fundamentals of Silicon Carbide Technology by : Tsunenobu Kimoto

Download or read book Fundamentals of Silicon Carbide Technology written by Tsunenobu Kimoto and published by John Wiley & Sons. This book was released on 2014-11-24 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.

Design and Fabrication of Schottky Barrier Diodes on SIC

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Publisher :
ISBN 13 :
Total Pages : 320 pages
Book Rating : 4.:/5 (43 download)

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Book Synopsis Design and Fabrication of Schottky Barrier Diodes on SIC by : Vivek Saxena

Download or read book Design and Fabrication of Schottky Barrier Diodes on SIC written by Vivek Saxena and published by . This book was released on 1998 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt:

SiC Materials and Devices

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Publisher : World Scientific
ISBN 13 : 9812703837
Total Pages : 143 pages
Book Rating : 4.8/5 (127 download)

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Book Synopsis SiC Materials and Devices by : Michael Shur

Download or read book SiC Materials and Devices written by Michael Shur and published by World Scientific. This book was released on 2007 with total page 143 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon carbide is known to have been investigated since 1907 when Captain H J Round demonstrated yellow and blue emission by applying bias between a metal needle and an SiC crystal. The potential of using SiC in semiconductor electronics was already recognized half a century ago. Despite its well-known properties, it has taken a few decades to overcome the exceptional technological difficulties of getting silicon carbide material to reach device quality and travel the road from basic research to commercialization.This second of two volumes reviews four important additional areas: the growth of SiC substrates; the deep defects in different SiC polytypes, which after many years of research still define the properties of bulk SiC and the performance and reliability of SiC devices; recent work on SiC JFETs; and the complex and controversial issues important for bipolar devices.Recognized leaders in the field, the contributors to this volume provide up-to-date reviews of further state-of-the-art areas in SiC technology and materials and device research.

The Fabrication and Characterisation of 4H-SiC Schottky Barrier Diodes

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Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (595 download)

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Book Synopsis The Fabrication and Characterisation of 4H-SiC Schottky Barrier Diodes by : Dominique Johanne Morrison

Download or read book The Fabrication and Characterisation of 4H-SiC Schottky Barrier Diodes written by Dominique Johanne Morrison and published by . This book was released on 2000 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: