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ISBN 13 :
Total Pages : 704 pages
Book Rating : 4.:/5 (31 download)
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 704 pages. Available in PDF, EPUB and Kindle. Book excerpt:
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ISBN 13 :
Total Pages : 620 pages
Book Rating : 4.3/5 (129 download)
Download or read book Energy Research Abstracts written by and published by . This book was released on 1990 with total page 620 pages. Available in PDF, EPUB and Kindle. Book excerpt:
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ISBN 13 :
Total Pages : 848 pages
Book Rating : 4.:/5 (31 download)
Download or read book ERDA Energy Research Abstracts written by and published by . This book was released on 1989 with total page 848 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Cheol Seong Hwang
Publisher : Springer Science & Business Media
ISBN 13 : 146148054X
Total Pages : 266 pages
Book Rating : 4.4/5 (614 download)
Download or read book Atomic Layer Deposition for Semiconductors written by Cheol Seong Hwang and published by Springer Science & Business Media. This book was released on 2013-10-18 with total page 266 pages. Available in PDF, EPUB and Kindle. Book excerpt: Offering thorough coverage of atomic layer deposition (ALD), this book moves from basic chemistry of ALD and modeling of processes to examine ALD in memory, logic devices and machines. Reviews history, operating principles and ALD processes for each device.
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ISBN 13 :
Total Pages : 1128 pages
Book Rating : 4.:/5 (319 download)
Download or read book Government Reports Announcements & Index written by and published by . This book was released on 1989-11 with total page 1128 pages. Available in PDF, EPUB and Kindle. Book excerpt:
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ISBN 13 :
Total Pages : 184 pages
Book Rating : 4.:/5 (4 download)
Download or read book Naval Research Reviews written by and published by . This book was released on 1999 with total page 184 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Dirk Ehrentraut
Publisher : Springer Science & Business Media
ISBN 13 : 3642048307
Total Pages : 337 pages
Book Rating : 4.6/5 (42 download)
Download or read book Technology of Gallium Nitride Crystal Growth written by Dirk Ehrentraut and published by Springer Science & Business Media. This book was released on 2010-06-14 with total page 337 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book discusses the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production.
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ISBN 13 :
Total Pages : 520 pages
Book Rating : 4.E/5 ( download)
Download or read book Technical Reports Awareness Circular : TRAC. written by and published by . This book was released on 1987 with total page 520 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Zhe Chuan Feng
Publisher : CRC Press
ISBN 13 : 1351647644
Total Pages : 968 pages
Book Rating : 4.3/5 (516 download)
Download or read book Handbook of Solid-State Lighting and LEDs written by Zhe Chuan Feng and published by CRC Press. This book was released on 2017-06-12 with total page 968 pages. Available in PDF, EPUB and Kindle. Book excerpt: This handbook addresses the development of energy-efficient, environmentally friendly solid-state light sources, in particular semiconductor light emitting diodes (LEDs) and other solid-state lighting devices. It reflects the vast growth of this field and impacts in diverse industries, from lighting to communications, biotechnology, imaging, and medicine. The chapters include coverage of nanoscale processing, fabrication of LEDs, light diodes, photodetectors and nanodevices, characterization techniques, application, and recent advances. Readers will obtain an understanding of the key properties of solid-state lighting and LED devices, an overview of current technologies, and appreciation for the challenges remaining. The handbook will be useful to material growers and evaluators, device design and processing engineers, newcomers, students, and professionals in the field.
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Publisher : Newnes
ISBN 13 : 0080932282
Total Pages : 3572 pages
Book Rating : 4.0/5 (89 download)
Download or read book Comprehensive Semiconductor Science and Technology written by and published by Newnes. This book was released on 2011-01-28 with total page 3572 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts
Author : American Association for Crystal Growth (AACG)
Publisher : Coe Truman International, LLC
ISBN 13 : 1613300085
Total Pages : 208 pages
Book Rating : 4.6/5 (133 download)
Download or read book ACCGE 2015 Abstracts eBook written by American Association for Crystal Growth (AACG) and published by Coe Truman International, LLC. This book was released on 2015-07-15 with total page 208 pages. Available in PDF, EPUB and Kindle. Book excerpt: A collection of abstracts for the 20th American Conference on Crystal Growth and Epitaxy (ACCGE-20) and 17th U.S. Biennial Workshop on Organometallic Vapor Phase Epitaxy (OMVPE-17) and The Second 2D Electronic Materials Symposium.
Author : United States. Office of Naval Research
Publisher :
ISBN 13 :
Total Pages : 84 pages
Book Rating : 4.:/5 (319 download)
Download or read book Office of Naval Research Guide to Programs written by United States. Office of Naval Research and published by . This book was released on 1987 with total page 84 pages. Available in PDF, EPUB and Kindle. Book excerpt:
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ISBN 13 :
Total Pages : 84 pages
Book Rating : 4.:/5 (31 download)
Download or read book Office of Naval Research, Guide to Programs written by and published by . This book was released on 1987 with total page 84 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Materials Research Society. Meeting Symposium M.
Publisher :
ISBN 13 :
Total Pages : 634 pages
Book Rating : 4.3/5 (91 download)
Download or read book Growth, Processing, and Characterization of Semiconductor Heterostructures: Volume 326 written by Materials Research Society. Meeting Symposium M. and published by . This book was released on 1994-03-23 with total page 634 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Author : Wengang (Wayne) Bi
Publisher : CRC Press
ISBN 13 : 1351648055
Total Pages : 775 pages
Book Rating : 4.3/5 (516 download)
Download or read book Handbook of GaN Semiconductor Materials and Devices written by Wengang (Wayne) Bi and published by CRC Press. This book was released on 2017-10-20 with total page 775 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book addresses material growth, device fabrication, device application, and commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and power electronics devices. It begins with an overview on basics of semiconductor materials, physics, growth and characterization techniques, followed by detailed discussion of advantages, drawbacks, design issues, processing, applications, and key challenges for state of the art GaN-based devices. It includes state of the art material synthesis techniques with an overview on growth technologies for emerging bulk or free standing GaN and AlN substrates and their applications in electronics, detection, sensing, optoelectronics and photonics. Wengang (Wayne) Bi is Distinguished Chair Professor and Associate Dean in the College of Information and Electrical Engineering at Hebei University of Technology in Tianjin, China. Hao-chung (Henry) Kuo is Distinguished Professor and Associate Director of the Photonics Center at National Chiao-Tung University, Hsin-Tsu, Taiwan, China. Pei-Cheng Ku is an associate professor in the Department of Electrical Engineering & Computer Science at the University of Michigan, Ann Arbor, USA. Bo Shen is the Cheung Kong Professor at Peking University in China.
Author : Serge Oktyabrsky
Publisher : Springer Science & Business Media
ISBN 13 : 1441915478
Total Pages : 451 pages
Book Rating : 4.4/5 (419 download)
Download or read book Fundamentals of III-V Semiconductor MOSFETs written by Serge Oktyabrsky and published by Springer Science & Business Media. This book was released on 2010-03-16 with total page 451 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.
Author : Robert F Davis
Publisher : World Scientific
ISBN 13 : 9814482692
Total Pages : 295 pages
Book Rating : 4.8/5 (144 download)
Download or read book Gan-based Materials And Devices: Growth, Fabrication, Characterization And Performance written by Robert F Davis and published by World Scientific. This book was released on 2004-05-07 with total page 295 pages. Available in PDF, EPUB and Kindle. Book excerpt: The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentration at heterojunction interfaces, high breakdown field, and low thermal impedance of GaN-based films grown over SiC or bulk AlN substrates make nitride-based electronic devices very promising. The chemical inertness of nitrides is another key property.This volume, written by experts on different aspects of nitride technology, addresses the entire spectrum of issues related to nitride materials and devices, and it will be useful for technologists, scientists, engineers, and graduate students who are working on wide bandgap materials and devices. The book can also be used as a supplementary text for graduate courses on wide bandgap semiconductor technology.
