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The Epitaxial Growth Of Ge On Si100 Using Te As A Surfactant
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Book Synopsis The Epitaxial Growth of Ge on Si(100) Using Te as a Surfactant by :
Download or read book The Epitaxial Growth of Ge on Si(100) Using Te as a Surfactant written by and published by . This book was released on 1993 with total page 6 pages. Available in PDF, EPUB and Kindle. Book excerpt: Epitaxial growth of Ge on Si using Te as a surfactant was studied with high resolution photoemission, low energy electron diffraction and cross-sectional transmission electron microscopy. The growth mode of Ge on Si changed from Stranski-Krastanov to layer-by-layer mode when 1/4 ML Te atoms were on the surface. During the growth, Te atoms segregated to the top of the surface. If the growth temperature is too high (above (approximately) 450C), the Te coverage was less than the necessary coverage to keep the layer by layer growth, and the growth mode of Ge on Si is still S-K.
Book Synopsis Scientific and Technical Aerospace Reports by :
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1994 with total page 836 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Molecular Beam Epitaxy by : Marian A. Herman
Download or read book Molecular Beam Epitaxy written by Marian A. Herman and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 465 pages. Available in PDF, EPUB and Kindle. Book excerpt: Molecular Beam Epitaxy describes a technique in wide-spread use for the production of high-quality semiconductor devices. It discusses the most important aspects of the MBE apparatus, the physics and chemistry of the crystallization of various materials and device structures, and the characterization methods that relate the structural parameters of the grown (or growing) film or structure to the technologically relevant procedure. In this second edition two new fields have been added: crystallization of as-grown low-dimensional heterostructures, mainly quantum wires and quantum dots, and in-growth control of the MBE crystallization process of strained-layer structures. Out-of-date material has been removed.
Book Synopsis Physics Of Semiconductors, The - Proceedings Of The 22nd International Conference (In 3 Volumes) by : David J Lockwood
Download or read book Physics Of Semiconductors, The - Proceedings Of The 22nd International Conference (In 3 Volumes) written by David J Lockwood and published by World Scientific. This book was released on 1995-01-20 with total page 2858 pages. Available in PDF, EPUB and Kindle. Book excerpt: These proceedings review the progress in most aspects of semiconductor physics, including those related to materials, processing and devices. The conference continues the tradition of the ICPS series and these volumes include state-of-the-art lectures. The plenary and invited papers address areas of major interest.These volumes will serve as excellent material for researchers in semiconductor physics and related fields.
Book Synopsis Government Reports Announcements & Index by :
Download or read book Government Reports Announcements & Index written by and published by . This book was released on 1994-06 with total page 1370 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Energy Research Abstracts written by and published by . This book was released on 1994-02 with total page 484 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Epitaxial Growth of Ge on Si(110) and SiGe on Si(100) Surfaces by : James D. Weil
Download or read book Epitaxial Growth of Ge on Si(110) and SiGe on Si(100) Surfaces written by James D. Weil and published by . This book was released on 1997 with total page 82 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Solid State Crystals : Materials Science and Applications by : Józef Żmija
Download or read book Solid State Crystals : Materials Science and Applications written by Józef Żmija and published by . This book was released on 1995 with total page 434 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Formation Of Semiconductor Interfaces - Proceedings Of The 4th International Conference by : J Pollman
Download or read book Formation Of Semiconductor Interfaces - Proceedings Of The 4th International Conference written by J Pollman and published by World Scientific. This book was released on 1994-06-09 with total page 818 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor interfaces are of paramount importance in micro, nano- and optoelectronics. Basic as well as applied research on such systems is therefore of extremely high current interest. To meet the continuous need for a better understanding of semiconductor interfaces with respect to both their fundamental physical and chemical properties as well as their applications in modern opto- and microelectronics, the series of international conferences on the formation of semiconductor interfaces was begun. The fourth conference of the series held in Jülich addresses as main topics: clean semiconductor surfaces; adsorbates at semiconductor surfaces; metal-semiconductor, insulator-semiconductor and semiconductor-semiconductor interfaces; devices and wet chemical processes. The 12 invited lectures assess the present status of the research in important areas and about 180 contributed papers describe most recent achievements in the field.
Book Synopsis Metalorganic Vapor Phase Epitaxy (MOVPE) by : Stuart Irvine
Download or read book Metalorganic Vapor Phase Epitaxy (MOVPE) written by Stuart Irvine and published by John Wiley & Sons. This book was released on 2019-10-07 with total page 582 pages. Available in PDF, EPUB and Kindle. Book excerpt: Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).
Download or read book Physics Briefs written by and published by . This book was released on 1993 with total page 1058 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis SiGe Based Technologies by : Y. Shiraki
Download or read book SiGe Based Technologies written by Y. Shiraki and published by Elsevier. This book was released on 1993-02-18 with total page 289 pages. Available in PDF, EPUB and Kindle. Book excerpt: The preparation of silicon germanium microstructures, their physical, chemical and electrical characterization, and their device processing and application are reviewed in this book. Special emphasis is given to ultrathin Si/Ge superlattices. Topics covered include: Wafer preparation and epitaxial growth; surface effects driven phenomena, such as clustering, segregation, 'surfactants'; Analysis, both in situ and ex situ; Strain adjustment methods; High quality buffers; Modification of material properties by quantum wells and superlattices; Devices: Novel concepts, processing, modelling, demonstrators. The questions highlighted, particularly those articles comparing related or competing activities, will provide a wealth of knowledge for all those interested in the future avenues of theory and applications in this field.
Book Synopsis Spectroscopic Characterization Techniques for Semiconductor Technology by :
Download or read book Spectroscopic Characterization Techniques for Semiconductor Technology written by and published by . This book was released on 1994 with total page 236 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Ab Initio Study of the Epitaxial Growth of Ge on Si(100) Surface by :
Download or read book Ab Initio Study of the Epitaxial Growth of Ge on Si(100) Surface written by and published by . This book was released on 1993 with total page 7 pages. Available in PDF, EPUB and Kindle. Book excerpt: We identify the binding sites for adsorption of a single Ge atom on the Si(100) surface using ab initio total energy calculations. The calculated diffusion barriers are in excellent agreement with experimental estimates. Using a large supercell we resolve the controversy regarding the binding geometry and migration path for the adatom, and investigate the influence of the adatom on the buckling of Si dimers. The adatom induces a buckling defect that is frequently observed using scanning tunneling microscopy (STM); therefore the study of single adatoms may be experimentally accessible.
Download or read book Science Abstracts written by and published by . This book was released on 1995 with total page 1360 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Government reports annual index by :
Download or read book Government reports annual index written by and published by . This book was released on 199? with total page 1686 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Dissertation Abstracts International by :
Download or read book Dissertation Abstracts International written by and published by . This book was released on 1995 with total page 778 pages. Available in PDF, EPUB and Kindle. Book excerpt:
