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Author : John Hall Downie
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (42 download)
Download or read book The Epitaxial Growth of Gallium Arsenide on a Semi-insulating Gallium Arsenide Substrate written by John Hall Downie and published by . This book was released on 1970 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 13 pages
Book Rating : 4.:/5 (227 download)
Download or read book Epitaxial Growth of Semi-Insulating GaAs written by and published by . This book was released on 1977 with total page 13 pages. Available in PDF, EPUB and Kindle. Book excerpt: The objective of this program is to develop techniques for the vapor phase growth of high resistivity epitaxial layers of gallium arsenide on semi-insulating gallium arsenide substrates. A capability to grow such layers of high quality material with minimum structural defects and good surface quality for use as 'buffer' layers prior to the growth of active layers for such devices as FETS and TELDS will eliminate the device performance problems caused by poor and inconsistent substrate quality. (Author).
Author : Stephen Ingalls Long
Publisher :
ISBN 13 :
Total Pages : 246 pages
Book Rating : 4.E/5 ( download)
Download or read book Solution Growth of Gallium Arsenide written by Stephen Ingalls Long and published by . This book was released on 1969 with total page 246 pages. Available in PDF, EPUB and Kindle. Book excerpt: The theory and experimental procedure for growth of epitaxial layers of GaAs by the solution regrowth method is described. Both GaAs of low carrier concentration with high mobility and intentionally doped GaAs layers, suitable for application to Gunn effect devices, can be grown by this process. Several methods for the evaluation of the thickness, doping profiles and mobility of the GaAs layers are discussed. The limitations of these methods are also presented. Several working Gunn devices were fabricated either with solution grown contacts on commercially made epitaxial active layers or with solution grown active layers. (Author).
Author : Alison Schary
Publisher :
ISBN 13 :
Total Pages : 654 pages
Book Rating : 4.E/5 ( download)
Download or read book A Comparison of Epitaxial Layers and Undoped Semi-insulating Substrates for Use in Silicon Implantation Into Gallium Arsenide written by Alison Schary and published by . This book was released on 1988 with total page 654 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : David William Woodard
Publisher :
ISBN 13 :
Total Pages : 382 pages
Book Rating : 4.E/5 ( download)
Download or read book Chromium-doped Semi-insulating Gallium Arsenide Grown by Liquid Phase Epitaxy written by David William Woodard and published by . This book was released on 1979 with total page 382 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Susan C. Palmateer
Publisher :
ISBN 13 :
Total Pages : 570 pages
Book Rating : 4.E/5 ( download)
Download or read book Mechanisms of Impurity Redistribution in Gallium Arsenide Substrates and Molecular Beam Epitaxially Grown Layers written by Susan C. Palmateer and published by . This book was released on 1985 with total page 570 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : M. R. Brozel
Publisher : Inst of Engineering & Technology
ISBN 13 : 9780852968857
Total Pages : 981 pages
Book Rating : 4.9/5 (688 download)
Download or read book Properties of Gallium Arsenide written by M. R. Brozel and published by Inst of Engineering & Technology. This book was released on 1996 with total page 981 pages. Available in PDF, EPUB and Kindle. Book excerpt: It was in 1986 that INSPEC (The Information Division of the Institution of Electrical Engineers) published the book Properties of Gallium Arsenide. Since then, major developments have taken place. This third edition is comprised of 150 specially commissioned articles contributed by experts from the USA, Europe and Japan.
Author : Hugh Thomas
Publisher :
ISBN 13 :
Total Pages : 400 pages
Book Rating : 4.3/5 (91 download)
Download or read book Gallium Arsenide for Devices and Integrated Circuits written by Hugh Thomas and published by . This book was released on 1986 with total page 400 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Richard Alan Stall
Publisher :
ISBN 13 :
Total Pages : 384 pages
Book Rating : 4.E/5 ( download)
Download or read book Growth, Characterization, and Applications of Gallium Arsenide and Germanium Layers Grown by Molecular Beam Epitaxy written by Richard Alan Stall and published by . This book was released on 1980 with total page 384 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Vilnis Guntis Kreismanis
Publisher :
ISBN 13 :
Total Pages : 352 pages
Book Rating : 4.E/5 ( download)
Download or read book Epitaxial Growth of Gallium Arsenide Materials and Devices of Metalorganic Chemical Vapor Deposition written by Vilnis Guntis Kreismanis and published by . This book was released on 1984 with total page 352 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 672 pages
Book Rating : 4.:/5 (42 download)
Download or read book Gallium Arsenide and Related Compounds written by and published by . This book was released on 1990 with total page 672 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher : INSPEC
ISBN 13 :
Total Pages : 370 pages
Book Rating : 4.3/5 (91 download)
Download or read book Properties of Gallium Arsenide written by and published by INSPEC. This book was released on 1986 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : B. de Cremoux
Publisher : Institute of Physics Publishing (GB)
ISBN 13 :
Total Pages : 736 pages
Book Rating : 4.X/5 (4 download)
Download or read book Gallium Arsenide and Related Compounds 1984 written by B. de Cremoux and published by Institute of Physics Publishing (GB). This book was released on 1985 with total page 736 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : V. G. Keramidas
Publisher :
ISBN 13 :
Total Pages : 314 pages
Book Rating : 4.:/5 (44 download)
Download or read book Proceedings of the Symposium on III-V Opto-Electronics Epitaxy and Device Related Processes written by V. G. Keramidas and published by . This book was released on 1983 with total page 314 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Margaret Folkard
Publisher :
ISBN 13 : 9780642898746
Total Pages : 25 pages
Book Rating : 4.8/5 (987 download)
Download or read book Liquid Phase Epitaxial Growth of Gallium Arsenide written by Margaret Folkard and published by . This book was released on 1979 with total page 25 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Neil Sclater
Publisher :
ISBN 13 :
Total Pages : 280 pages
Book Rating : 4.3/5 (91 download)
Download or read book Gallium Arsenide IC Technology written by Neil Sclater and published by . This book was released on 1988 with total page 280 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : K. E. Singer
Publisher : CRC Press
ISBN 13 :
Total Pages : 672 pages
Book Rating : 4.:/5 (51 download)
Download or read book Gallium Arsenide and Related Compounds 1990, Proceedings of the 17th INT Symposium on Gallium Arsenide and Related Compounds, Jersey, Channel Islands, September 1990 written by K. E. Singer and published by CRC Press. This book was released on 1991 with total page 672 pages. Available in PDF, EPUB and Kindle. Book excerpt: The 17th International Symposium on Gallium Arsenide and related Compounds was held in Jersey, Channel Islands, on 24 - 27 September 1990. This volume contains a total of 112 papers, including four invited papers and a number of late news papers. The papers are divided into eight chapters relating to various aspects of the subject. These include bulk and epitaxial growth, characterization, processing, electron transport, and both high speed and opto-electronic devices. Current research and recent developments in these areas are covered. Particularly apparent is the increasing importance of III-V devices. These proceedings will be invaluable to researchers in solid state semiconductor and device physics, both in industry and academia, as they represent the latest developments in this exciting and rapidly developing field.
