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The Effects Of Ionizing Radiation On Transistors
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Book Synopsis The Effects of Ionizing Radiation on Transistors by : Daniel Paul Peletier
Download or read book The Effects of Ionizing Radiation on Transistors written by Daniel Paul Peletier and published by . This book was released on 1967 with total page 108 pages. Available in PDF, EPUB and Kindle. Book excerpt: An experiment, in which 15 npn bipolar silicon transistors were exposed to Co60 gamma radiation, is described. The known theory concerning the radiation damage of transistors is presented. In addition, the distinguishing characteristics of ionizing radiation damage are discussed, and a method of estimating bulk damage is developed. During the experiment, the following transistor parameters were measured: AC and DC common emitter current gain, collector-to-base leakage current, gain-bandwidth product, and base spreading resistance. The damage curves for leakage current and AC and DC common emitter current gain are plotted and discussed. The relation between transistor parameter degradation and bias current is investigated by dividing the transistors into three equal groups and biasing them at three different collector levels during irradiation. The recovery of leakage current is plotted and an exponential curve fitted to the data. Recovery time of current gain is qualitatively observed. Data indicate that in some transistors damage to leakage current peaks near an accumulated radiation dose of 100,000 rad. The value of this peak is as large as 300 times the final damage value. The recovery time constant of leakage current damage is less than 15 minutes for the transistors tested. (Author).
Book Synopsis Ionizing Radiation Effects in Electronics by : Marta Bagatin
Download or read book Ionizing Radiation Effects in Electronics written by Marta Bagatin and published by CRC Press. This book was released on 2018-09-03 with total page 394 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ionizing Radiation Effects in Electronics: From Memories to Imagers delivers comprehensive coverage of the effects of ionizing radiation on state-of-the-art semiconductor devices. The book also offers valuable insight into modern radiation-hardening techniques. The text begins by providing important background information on radiation effects, their underlying mechanisms, and the use of Monte Carlo techniques to simulate radiation transport and the effects of radiation on electronics. The book then: Explains the effects of radiation on digital commercial devices, including microprocessors and volatile and nonvolatile memories—static random-access memories (SRAMs), dynamic random-access memories (DRAMs), and Flash memories Examines issues like soft errors, total dose, and displacement damage, together with hardening-by-design solutions for digital circuits, field-programmable gate arrays (FPGAs), and mixed-analog circuits Explores the effects of radiation on fiber optics and imager devices such as complementary metal-oxide-semiconductor (CMOS) sensors and charge-coupled devices (CCDs) Featuring real-world examples, case studies, extensive references, and contributions from leading experts in industry and academia, Ionizing Radiation Effects in Electronics: From Memories to Imagers is suitable both for newcomers who want to become familiar with radiation effects and for radiation experts who are looking for more advanced material or to make effective use of beam time.
Book Synopsis The Effects of Ionizing Radiation on Transistor Gain by : D. L. Nelson
Download or read book The Effects of Ionizing Radiation on Transistor Gain written by D. L. Nelson and published by . This book was released on 1965 with total page 28 pages. Available in PDF, EPUB and Kindle. Book excerpt: Transistor gain is reduced by ioizing radiation, which affects the transistor surface, and by displacement radiation, which causes lattice defects. The investigation of ionizing radiation damage described in this paper was accomplished with X-rays of photon energy less than 150 kev, which is below the energy necessary for displacement damage in silicon. Experiments were performed on silicon dioxide passivated silicon planar transistors with open leads, in a normal amplifying mode and with other junction bias conditions. AC and DC gain measurements at various injection levels showed a gain degradation dependence on the operating bias conditions. Open leads and back-biasing of each junction during irradiation resulted in considerable damage, with almost complete recovery occurring in most transistors tested when the base emitter junction was forward-biased. Many of the characteristics of the radiation damage observed can be explained by Atalla's model that charge collection at the surface causes a widening of the space charge region, thus increasing the recombination-generation current.
Book Synopsis Ionizing Radiation Effects in MOS Devices and Circuits by : T. P. Ma
Download or read book Ionizing Radiation Effects in MOS Devices and Circuits written by T. P. Ma and published by John Wiley & Sons. This book was released on 1989-04-18 with total page 616 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first comprehensive overview describing the effects of ionizing radiation on MOS devices, as well as how to design, fabricate, and test integrated circuits intended for use in a radiation environment. Also addresses process-induced radiation effects in the fabrication of high-density circuits. Reviews the history of radiation-hard technology, providing background information for those new to the field. Includes a comprehensive review of the literature and an annotated listing of research activities in radiation-hardness research.
Book Synopsis The Effects of Radiation on Electronic Systems by : George Messenger
Download or read book The Effects of Radiation on Electronic Systems written by George Messenger and published by Springer. This book was released on 1992-05-14 with total page 984 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Radiation Effects in Semiconductor Devices by : Frank Larin
Download or read book Radiation Effects in Semiconductor Devices written by Frank Larin and published by . This book was released on 1968 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Ionizing Radiation Effects In Mos Oxides by : Timothy R Oldham
Download or read book Ionizing Radiation Effects In Mos Oxides written by Timothy R Oldham and published by World Scientific. This book was released on 2000-01-25 with total page 190 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume is intended to serve as an updated critical guide to the extensive literature on the basic physical mechanisms controlling the radiation and reliability responses of MOS oxides. The last such guide was Ionizing Radiation Effects in MOS Devices and Circuits, edited by Ma and Dressendorfer and published in 1989. While that book remains an authoritative reference in many areas, there has been a significant amount of more recent work on the nature of the electrically active defects in MOS oxides which are generated by exposure to ionizing radiation. These same defects are also critical in many other areas of oxide reliability research. As a result of this work, the understanding of the basic physical mechanisms has evolved. This book summarizes the new work and integrates it with older work to form a coherent, unified picture. It is aimed primarily at specialists working on radiation effects and oxide reliability.
Book Synopsis Radiation Effects in Electronics by :
Download or read book Radiation Effects in Electronics written by and published by . This book was released on 1965 with total page 258 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Radiation Effects And Soft Errors In Integrated Circuits And Electronic Devices by : Ronald D Schrimpf
Download or read book Radiation Effects And Soft Errors In Integrated Circuits And Electronic Devices written by Ronald D Schrimpf and published by World Scientific. This book was released on 2004-07-29 with total page 349 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a detailed treatment of radiation effects in electronic devices, including effects at the material, device, and circuit levels. The emphasis is on transient effects caused by single ionizing particles (single-event effects and soft errors) and effects produced by the cumulative energy deposited by the radiation (total ionizing dose effects). Bipolar (Si and SiGe), metal-oxide-semiconductor (MOS), and compound semiconductor technologies are discussed. In addition to considering the specific issues associated with high-performance devices and technologies, the book includes the background material necessary for understanding radiation effects at a more general level.
Book Synopsis Radiation Effects in Semiconductors and Semiconductor Devices by : V. S. Vavilov
Download or read book Radiation Effects in Semiconductors and Semiconductor Devices written by V. S. Vavilov and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 280 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Permanent Ionizing Radiation Effects in Dielectrically Bounded Field Effect Transistors by : D. Neamen
Download or read book Permanent Ionizing Radiation Effects in Dielectrically Bounded Field Effect Transistors written by D. Neamen and published by . This book was released on 1974 with total page 10 pages. Available in PDF, EPUB and Kindle. Book excerpt: The permanent ionizing radiation effects resulting from the use of dielectrics to bound FET structures have been experimentally determined for a total ionizing dose up to 10 to the 8th power rads (Si) and for various dielectric isolation techniques. The experimental vehicles used for making these determinations were dielectrically isolated. JFET's operated in such a manner that they behaved as a combination junction-MOS field-effect transistor. The experimental results observed by measuring the saturation current, turn-off voltage, maximum transconductance, and channel conductance of the junction FET show a non-monotonic relationship in the effects of a positive charge build-up in the silicon dioxide isolation dielectric with increasing dose. A theoretical model is derived for calculating the interface charge density as a function of the measurable JFET device parameters.
Book Synopsis Research on the Radiation Effects and Compact Model of SiGe HBT by : Yabin Sun
Download or read book Research on the Radiation Effects and Compact Model of SiGe HBT written by Yabin Sun and published by Springer. This book was released on 2017-10-24 with total page 187 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). It introduces the small-signal equivalent circuit of SiGe HBTs including the distributed effects, and proposes a novel direct analytical extraction technique based on non-linear rational function fitting. It also presents the total dose effects irradiated by gamma rays and heavy ions, as well as the single-event transient induced by pulse laser microbeams. It offers readers essential information on the irradiation effects technique and the SiGe HBTs model using that technique.
Book Synopsis Radiation Effects on Power Transistors by :
Download or read book Radiation Effects on Power Transistors written by and published by . This book was released on 1975 with total page 13 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Ionizing Radiation Effects on Graphene Based Field Effects Transistors by : Konstantinos Alexandrou
Download or read book Ionizing Radiation Effects on Graphene Based Field Effects Transistors written by Konstantinos Alexandrou and published by . This book was released on 2016 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Our results show that devices using a passivation layer and a shielded gate structure were less prone to irradiation effects when compared to the standard back-gate GFETs, offering less performance degradation and enhanced stability over prolonged irradiation periods. This is an important step towards the development of radiation hard graphene-based devices, enabling operation in space, military, or other radiation sensitive environments.
Book Synopsis Radiation Effects in Electronics by :
Download or read book Radiation Effects in Electronics written by and published by ASTM International. This book was released on 1965 with total page 248 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Characterization of Ionizing Radiation Effects in Lateral PNP Bipolar Junction Transistors and Identification of Gate Control as a Hardening Approach by : Hugh James Barnaby
Download or read book Characterization of Ionizing Radiation Effects in Lateral PNP Bipolar Junction Transistors and Identification of Gate Control as a Hardening Approach written by Hugh James Barnaby and published by . This book was released on 1995 with total page 262 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Radiation Effects in Semiconductors by : Krzysztof Iniewski
Download or read book Radiation Effects in Semiconductors written by Krzysztof Iniewski and published by CRC Press. This book was released on 2018-09-03 with total page 442 pages. Available in PDF, EPUB and Kindle. Book excerpt: Space applications, nuclear physics, military operations, medical imaging, and especially electronics (modern silicon processing) are obvious fields in which radiation damage can have serious consequences, i.e., degradation of MOS devices and circuits. Zeroing in on vital aspects of this broad and complex topic, Radiation Effects in Semiconductors addresses the ever-growing need for a clear understanding of radiation effects on semiconductor devices and circuits to combat potential damage it can cause. Features a chapter authored by renowned radiation authority Lawrence T. Clark on Radiation Hardened by Design SRAM Strategies for TID and SEE Mitigation This book analyzes the radiation problem, focusing on the most important aspects required for comprehending the degrading effects observed in semiconductor devices, circuits, and systems when they are irradiated. It explores how radiation interacts with solid materials, providing a detailed analysis of three ways this occurs: Photoelectric effect, Compton effect, and creation of electron-positron pairs. The author explains that the probability of these three effects occurring depends on the energy of the incident photon and the atomic number of the target. The book also discusses the effects that photons can have on matter—in terms of ionization effects and nuclear displacement Written for post-graduate researchers, semiconductor engineers, and nuclear and space engineers with some electronics background, this carefully constructed reference explains how ionizing radiation is creating damage in semiconducting devices and circuits and systems—and how that damage can be avoided in areas such as military/space missions, nuclear applications, plasma damage, and X-ray-based techniques. It features top-notch international experts in industry and academia who address emerging detector technologies, circuit design techniques, new materials, and innovative system approaches.
