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The Effects Of Interfacial Chemistry On The Properties Of Schottky Contacts To Gallium Arsenide
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Book Synopsis The Effects of Interfacial Chemistry on the Properties of Schottky Contacts to Gallium Arsenide by : Margaret Leslie Kniffin
Download or read book The Effects of Interfacial Chemistry on the Properties of Schottky Contacts to Gallium Arsenide written by Margaret Leslie Kniffin and published by . This book was released on 1990 with total page 558 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Interfacial Stress Effects in Gallium Arsenide Schottky Barrier Diodes by : Gregory K. Sherrill
Download or read book Interfacial Stress Effects in Gallium Arsenide Schottky Barrier Diodes written by Gregory K. Sherrill and published by . This book was released on 1985 with total page 208 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Gallium Arsenide III written by P. Kordoš and published by Trans Tech Publications Ltd. This book was released on 1989-01-01 with total page 376 pages. Available in PDF, EPUB and Kindle. Book excerpt: Proceedings of the 3rd International Conference on Physics & Technology of GaAs and other III-V Semiconductors, Lomnica, CSFR, December 1988
Book Synopsis Study of interfacial reactions in gold-based contacts of gallium arsenide by : Taeil Kim
Download or read book Study of interfacial reactions in gold-based contacts of gallium arsenide written by Taeil Kim and published by . This book was released on 1986 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Properties of Gallium Arsenide written by and published by INSPEC. This book was released on 1986 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Effect of Barrier Height on Friction Behavior of the Semiconductors Silicon and Gallium Arsenide in Contact with Pure Metals by : Hiroshi Mishina
Download or read book Effect of Barrier Height on Friction Behavior of the Semiconductors Silicon and Gallium Arsenide in Contact with Pure Metals written by Hiroshi Mishina and published by . This book was released on 1984 with total page 16 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Physics and Chemistry of III-V Compound Semiconductor Interfaces by : Carl Wilmsen
Download or read book Physics and Chemistry of III-V Compound Semiconductor Interfaces written by Carl Wilmsen and published by Springer Science & Business Media. This book was released on 2013-06-29 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: The application of the 111-V compound semiconductors to device fabrica tion has grown considerably in the last few years. This process has been stimulated, in part, by the advancement in the understanding of the interface physics and chemistry of the III-V's. The literature on this subject is spread over the last 15 years and appears in many journals and conference proceedings. Understanding this literature requires consider able effort by the seasoned researcher, and even more for those starting out in the field or by engineers and scientists who wish to apply this knowledge to the fabrication of devices. The purpose of this book is to bring together much of the fundamental and practical knowledge on the physics and chemistry of the 111-V compounds with metals and dielectrics. The authors of this book have endeavored to provide concise overviews of these areas with many tahles ancI grarhs whic. h c. omr>are and summarize the literature. In this way, the book serves as both an insightful treatise on III-V interfaces and a handy reference to the literature. The selection of authors was mandated by the desire to include both fundamental and practical approaches, covering device and material aspects of the interfaces. All of the authors are recognized experts on III-V interfaces and each has worked for many years in his subject area. This experience is projected in the breadth of understanding in each chapter.
Book Synopsis Ohmic and Schottky Contacts to Gallium Nitride by : John M. DeLucca
Download or read book Ohmic and Schottky Contacts to Gallium Nitride written by John M. DeLucca and published by . This book was released on 2000 with total page 272 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis The Effect of Polarity and Other Surface Related Properties on Contact Angles Between Liquid Gallium and Oriented Single Crystals of Gallium Arsenide by : Iraj Kashkooli
Download or read book The Effect of Polarity and Other Surface Related Properties on Contact Angles Between Liquid Gallium and Oriented Single Crystals of Gallium Arsenide written by Iraj Kashkooli and published by . This book was released on 1974 with total page 66 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis The Role of Defects in Sulfide-passivated Gallium Arsenide Surfaces and Metal-gallium Arsenide Schottky Barriers by : Tao Zhang
Download or read book The Role of Defects in Sulfide-passivated Gallium Arsenide Surfaces and Metal-gallium Arsenide Schottky Barriers written by Tao Zhang and published by . This book was released on 1989 with total page 290 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis A Workshop on 3-5 Semiconductor: Metal Interfacial Chemistry and Its Effect on Electrical Properties, November 3-5, 1986 by : William E. Spicer
Download or read book A Workshop on 3-5 Semiconductor: Metal Interfacial Chemistry and Its Effect on Electrical Properties, November 3-5, 1986 written by William E. Spicer and published by . This book was released on 1986 with total page 659 pages. Available in PDF, EPUB and Kindle. Book excerpt: This workshop discusses: The Thermodynamics of Bulk Metal: III-V Systems Related to Interfacial Chemistry; Thermodynamic Considerations of Metal-GaAs Reactions plus TEM Results; Chemistry of Ti: GaAs Interfaces; Questions Concerning Interfacial Chemistry, Equilibrium, and Electrical Properties; The Chemistry and Morphology of Metal/III-V Semiconductor Interfaces; Schottky Barriers on InP(110); Comparison to GaAs(110) Interface; Stables Phases at Reactive Metal/Compound Semiconductor Interfaces; Thermally Stable Ohmic Contact to n- type GaAs; Effects in Ohmic Contacts; Non Alloyed Ohmic Contacts by Solid State Reactions; Large Variations of GaAs Schottky Barrier Height by Interface Layers; Effects on Schottky Barriers of Metal Substitution in Semiconductors; III-V Interfaces: Schottky Barriers vs. Heterojunctions; A Comparison between Conventional and in-situ UHV Processing for Ge/GaAs and Co/GaAs Structures; Electrical Study of Schottky Barriers on Atomically Clean 3-5(110) Surfaces; A Comparison to the Results of Studies Using Surface Sensitive Techniques and Au-GaAs Ohmic Contacts; The Structures of Au/GaAs and A1/GaAs Interfaces; Refractory Silicide Contacts for Self-Aligned GaAs MESFETs; Heterojunction Growth and Impurity Incorporation During Vapor Growth of Compound Semiconductors; Reflection EXAFS Studies of Semiconductor-Metal Interfaces.
Book Synopsis Chemical and Electronic Properties of the Dielectric/gallium Arsenide Interface by : Kenneth Dale Rachocki
Download or read book Chemical and Electronic Properties of the Dielectric/gallium Arsenide Interface written by Kenneth Dale Rachocki and published by . This book was released on 1990 with total page 274 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Studies of Interfacial Chemistry Between Metals and Their Effect on Electronic Systems by : W. E. Spicer
Download or read book Studies of Interfacial Chemistry Between Metals and Their Effect on Electronic Systems written by W. E. Spicer and published by . This book was released on 1988 with total page 29 pages. Available in PDF, EPUB and Kindle. Book excerpt: The technical problem was to study the interfacial chemistry on the metal/III-V semiconductor systems and their influence on electronic properties of interfaces. The study was concentrated on GaAs and to a lesser extent InP - two representative III-V semiconductors of foremost technological interest. The studies also included oxidation partly because of the presence of oxides at interfaces of practical devices, and studies of III-V semiconductor heterojunctions which are very closely related to the problems investigated in this proposal. Also, some amendments of the program were implemented to touch on current developments in the field of III-V semiconductor interfaces. A broad range of laboratory techniques been used with particular emphasis on photoemission spectroscopy for thin overlayers and I-V and C-V electrical measurements for thick metallic overlayers. (JES).
Book Synopsis Study of Interfacial Chemistry Between Metals and Their Effect on Electronic Systems by : W. E. Spicer
Download or read book Study of Interfacial Chemistry Between Metals and Their Effect on Electronic Systems written by W. E. Spicer and published by . This book was released on 1987 with total page 8 pages. Available in PDF, EPUB and Kindle. Book excerpt: A number of results are summarized in this report. Many of these relate to the Advanced Unified Defect Model outlined in the previous semi-annual report. In this context, the modeling results help explain recent results on a model ohmic contact from Waldrop. This is important in that it appears that a new mechanism for ohmic contacts on GaAs is possible. Another area of research is that of heterojunctions. In one set of experiments, new techniques involving polarization dependent SEXAFS (Surface Extended X ray Absorption Fine Structure) measurements were developed and applied to determine the lattice constant of Si on GaAs perpendicular to the interface as a function of Si thickness. The results indicate dislocation formation at these 4% lattice mismatched heterojunctions at Si thicknesses less than previously predicted. Our work on Si/GaAs has allowed us to critically examine the roles of materials perfection and measurements difficulty in determining offsets using PES. We find that differences in reported results are likely due to poor misinterpretation of experimental data rather than a variation of offset due to materials imperfection. A new soft X ray source allows us to use this tool with high surface sensitivity in PES. The effects of annealing of Ti/GaAs give important insights for this practically important system. Studies of As/GaAs gives more insight into the nature of Fermi level pinning on GaAs.
Book Synopsis Evolution of Interfacial Phases and Their Effects on Ohmic Contacts to N-GaAs in Ni-Ge-Ti Metallizations by : Tae-Jin Kim
Download or read book Evolution of Interfacial Phases and Their Effects on Ohmic Contacts to N-GaAs in Ni-Ge-Ti Metallizations written by Tae-Jin Kim and published by . This book was released on 1996 with total page 336 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Ohmic Contacts to Gallium Aluminum Arsenide for High Temperature Applications by :
Download or read book Ohmic Contacts to Gallium Aluminum Arsenide for High Temperature Applications written by and published by . This book was released on 1988 with total page 68 pages. Available in PDF, EPUB and Kindle. Book excerpt: A new approach for fabricating nonalloyed ohmic contacts to gallium arsenide was developed. The approach uses ultrathin layers of heavily doped germanium or silicon in contact with gallium arsenide to alter the Schottky barrier height(phi B) at the gallium arsenide interface. For n-type gallium arsenide phi B could be varied from about 0.3 to 1.0 eV. The low barriers are useful for tunneling ohmic contacts to n-gallium arsenide while the high barriers should be useful for p-gallium arsenide ohmic contacts and for Field Effect Transistor (FET) gate applications. In some instances it was necessary to interpose a thin nonmetallic electrically conducting barrier between the contact metal and the thin germanium or silicon layer to preserve optimum contact properties. Specific contact resistivity measurements indicated that contact resistivity
Book Synopsis Surface and Interface Effects in VLSI by : Norman G. Einspruch
Download or read book Surface and Interface Effects in VLSI written by Norman G. Einspruch and published by Academic Press. This book was released on 2014-12-01 with total page 396 pages. Available in PDF, EPUB and Kindle. Book excerpt: VLSI Electronics Microstructure Science, Volume 10: Surface and Interface Effects in VLSI provides the advances made in the science of semiconductor surface and interface as they relate to electronics. This volume aims to provide a better understanding and control of surface and interface related properties. The book begins with an introductory chapter on the intimate link between interfaces and devices. The book is then divided into two parts. The first part covers the chemical and geometric structures of prototypical VLSI interfaces. Subjects detailed include, the technologically most important interface, Si-SiO2 and the interplay between interface chemistry and the causes for metal-semiconductor contact behavior, primarily in the III-Vs. The following section deals primarily with the electronic properties of interfaces. Under this section, compound semiconductors, semiconductor-semiconductor interface, constraints that the microscopic interface places on architectures involving metal-semiconductor (MESFET), "Ohmic" contacts, and the behavior of very small, high-speed devices are discussed extensively. The final chapter shows that the Si - SiO2 interface can play a major role in determining carrier transport when MOSFETS are scaled down to ULSI dimensions. Engineers, designers, and scientists will find the book very useful.
