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Synthesis Of High Purity Gallium Nitride Powders And Growth And Characterization Of Aluminum Nitride And Gallium Nitride Bulk Single Crystals
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Book Synopsis Synthesis of High Purity Gallium Nitride Powders and Growth and Characterization of Aluminum Nitride and Gallium Nitride Bulk Single Crystals by : Cengiz Mustafa Balkas
Download or read book Synthesis of High Purity Gallium Nitride Powders and Growth and Characterization of Aluminum Nitride and Gallium Nitride Bulk Single Crystals written by Cengiz Mustafa Balkas and published by . This book was released on 1997 with total page 262 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Bulk Gallium Nitride Crystal Growth and Characterizations and High Purity Gallium Nitride Powder Synthesis and Applications by : Huaqiang Wu
Download or read book Bulk Gallium Nitride Crystal Growth and Characterizations and High Purity Gallium Nitride Powder Synthesis and Applications written by Huaqiang Wu and published by . This book was released on 2006 with total page 380 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis American Doctoral Dissertations by :
Download or read book American Doctoral Dissertations written by and published by . This book was released on 1996 with total page 872 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis An Alternative Approach to the Growth of Single Crystal Gallium Nitride by :
Download or read book An Alternative Approach to the Growth of Single Crystal Gallium Nitride written by and published by . This book was released on 1993 with total page 15 pages. Available in PDF, EPUB and Kindle. Book excerpt: This project has been primarily concerned with investigating a new approach to the synthesis of epitaxial layers of high purity gallium nitride. The new approach involves the use of hydrazoic acid, HN3, a previously untried precursor as the source of active nitrogen. A new, all-stainless steel apparatus which is UHV compatible, has been constructed. It has been designed to allow growth studies to be made by the chemical beam epitaxy (CBE) technique or by low pressure metal organic vapour phase deposition (LPMOCVD) at pressures up to ca. 1mbar. During the grant period the apparatus has been constructed, tested and modified. Experiments have been carried out which show that gallium nitride and aluminium nitride can be made from the reaction of hydrazoic acid with trimethyl gallium and trimethyl aluminium respectively, at a hot substrate surface. In- situ RHEED patterns and ex-situ Auger spectra and X-ray diffraction data have been obtained. Systematic studies aimed at producing high quality single crystal films have been made. The results are promising and uniform, golden yellow films of gallium nitride can now be produced. RHEED data show that the films are composed of highly orientated crystals. The X-ray results support this, with crystal sizes being at least 1000A with the crystals strongly orientated along the c-axis.
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2002 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Comprehensive Semiconductor Science and Technology by :
Download or read book Comprehensive Semiconductor Science and Technology written by and published by Newnes. This book was released on 2011-01-28 with total page 3572 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts
Book Synopsis Dissertation Abstracts International by :
Download or read book Dissertation Abstracts International written by and published by . This book was released on 2002 with total page 656 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Bulk Gallium Nitride Growth and Characterization by : P. Phanikumar Konkapaka
Download or read book Bulk Gallium Nitride Growth and Characterization written by P. Phanikumar Konkapaka and published by . This book was released on 2005 with total page 131 pages. Available in PDF, EPUB and Kindle. Book excerpt: It was found that kinetics of decomposition of pure GaN powder without oxygen resulted in incongruent evaporation leading to the formation of the liquid gallium in the powder. A flow through configuration was also used because of its high collection efficiency of growth species. A mixture of Ga 2O3 and carbon powder as well as commercial GaN powder was used as precursors of gallium suboxide in this configuration. This configuration also demonstrated growth rates that are comparable to flow over configuration.
Book Synopsis Ceramic Abstracts by : American Ceramic Society
Download or read book Ceramic Abstracts written by American Ceramic Society and published by . This book was released on 1996 with total page 1000 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Synthesis of gallium nitride powder from gas-solid reaction using carbon as reducing agent by :
Download or read book Synthesis of gallium nitride powder from gas-solid reaction using carbon as reducing agent written by and published by . This book was released on 2002 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: O nitreto de gálio (GaN) é um dos mais interessantes e promissores materiais para aplicação em dispositivos óptico-eletrônicos. GaN pode ser usado para a fabricação de diodos e lasers azuis. O desenvolvimento deste tipo de material está relacionado com três campos principais: 1) deposição de camadas de GaN cristalino; 2) produção de nano-filamentos a partir de reações confinadas no interiorde nanotubos de carbono; 3) síntese de GaN em pó por diferentes métodos químicos. Recentemente, novas técnicas de deposição adotaram a sublimação de pós de GaN como fonte de gálio para a produção de nanofilamentos de GaN, filmesfinos ou cristais. Estes métodos de sublimação mostram a necessidade do emprego de pós de GaN. No presente trabalho, é apresentada uma nova rota para a produção de pós de GaN a partir da reação gás-sólido entre Ga2O3 e NH3(g)utilizando o carbono como agente redutor no interior de um novo tipo de reator, disposto verticalmente. A partir desta rota obteve-se pós de GaN com conversões aproximadamente de 100% e com estrutura cristalina hexagonal. A quantidade deGaN obtida variou de acordo com os parâmetros experimentais adotados. Através de uma análise estatística foi possível determinar a influência da temperatura, razão molar de carbono/Ga2O3 e do tempo experimental sobre a taxa de produção de GaN.
Book Synopsis Synthesis and Characterisation of Gallium Nitride Nanoparticle, Core/shell Particles and Nanorods by : Srikant Kannan Iyer
Download or read book Synthesis and Characterisation of Gallium Nitride Nanoparticle, Core/shell Particles and Nanorods written by Srikant Kannan Iyer and published by . This book was released on 2007 with total page 166 pages. Available in PDF, EPUB and Kindle. Book excerpt: Quantum Dots (QD) have made a big impact on the scientific community with their potential applications. For over the past 20 years there has been a lot of discussion about the various methods for synthesizing QD, and there have been some crucial fundamental breakthroughs in their synthesis. QD are semiconducting nanoparticles with interesting optical and electronic properties. II-VI QD have been well characterized and have paved the way for further QD research. There has been a a lot of interest in III-Nitride materials especially Gallium nitride and Aluminum nitride. Due to their wide direct band gap and lattice mismatch, these materials are suitable for making opto-electronic devices. Bulk gallium nitride has a band gap of 3.3eV and aluminum nitride has a band gap of approximately 6.0e V, hence they emit in the UV spectrum. Synthesis of these materials has been done at very high temperatures. The goal of this thesis is to synthesize solution based colloidal gallium nitride nanoparticles and nanorods. A suitable reaction route was chosen to synthesize the gallium nitride-aluminum nitride core shell particles. The materials synthesized were annealed at a suitable temperature and characterized by powder X-Ray, Diffraction, and Photoluminescence Spectroscopy.
Book Synopsis Technology of Gallium Nitride Crystal Growth by : Dirk Ehrentraut
Download or read book Technology of Gallium Nitride Crystal Growth written by Dirk Ehrentraut and published by Springer. This book was released on 2010-11-05 with total page 326 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book discusses the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production.
Download or read book JJAP written by and published by . This book was released on 1996 with total page 574 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Bulk Crystal Growth, Characterization and Thermodynamic Analysis of Aluminum Nitride and Related Nitrides by : Li Du
Download or read book Bulk Crystal Growth, Characterization and Thermodynamic Analysis of Aluminum Nitride and Related Nitrides written by Li Du and published by . This book was released on 2011 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The sublimation recondensation crystal growth of aluminum nitride, titanium nitride, and yttrium nitride were explored experimentally and theoretically. Single crystals of these nitrides are potentially suitable as substrates for AlGaInN epitaxial layers, which are employed in ultraviolet optoelectronics including UV light-emitting diodes and laser diodes, and high power high frequency electronic device applications. A thermodynamic analysis was applied to the sublimation crystal growth of aluminum nitride to predict impurities transport (oxygen, carbon, and hydrogen) and to study the aspects of impurities incorporation for different growth conditions. A source purification procedure was established to minimize the impurity concentration and avoid degradation of the crystal's properties. More than 98% of the oxygen, 99.9% of hydrogen and 90% of carbon originally in the source was removed. The AlN crystal growth process was explored in two ways: self-seeded growth with spontaneous nucleation directly on the crucible lid or foil, and seeded growth on SiC and AlN. The oxygen concentration was 2 ~ 4 x 1018cm-3, as measured by secondary ion mass spectroscopy in the crystals produced by self-seeded growth. Crystals grown from AlN seeds have visible grain size expansion. The initial AlN growth on SiC at a low temperature range (1400°C ~1600°C) was examined to understand the factors controlling nucleation. Crystals were obtained from c-plane on-axis and off-axis, Si-face and C-face, as well as m-plane SiC seeds. In all cases, crystal growth was fastest perpendicular to the c-axis. The growth rate dependence on temperature and pressure was determined for TiN and YN crystals, and their activation energies were 775.8±29.8kJ/mol and 467.1±21.7kJ/mol respectively. The orientation relationship of TiN (001) [2 parallel vertical lines] W (001) with TiN [100] [2 parallel vertical lines] W [110], a 45° angle between TiN [100] and W [100], was seen for TiN crystals deposited on both (001) textured tungsten and randomly orientated tungsten. Xray diffraction confirmed that the YN crystals were rock-salt structure, with a lattice constant of 4.88[A with a circle above it]. Cubic yttria was detected in YN sample from the oxidation upon its exposed to air for limited time by XRD, while non-cubic yttria was detected in YN sample for exposures more than one hour by Raman spectra.
Book Synopsis Ammonothermal Growth of Gallium Nitride by : Siddha Pimputkar
Download or read book Ammonothermal Growth of Gallium Nitride written by Siddha Pimputkar and published by LAP Lambert Academic Publishing. This book was released on 2014-09-10 with total page 236 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium Nitride (GaN) is a promising semiconductor with the ability to emit visible light of various wavelengths, most notably in the blue and green. Given the highly efficient manner in which white light can be created using this material, it is bound to replace all other lighting sources due to energy savings and longevity. Furthermore, GaN electronics promise to reduce a significant portion of energy losses due to energy conversion processes, while enabling higher power and temperature operations. Availability of native, large area substrates for higher quality devices is critical, though largely lacking due to the difficulty in growing GaN using bulk, single crystal growth techniques. The ammonothermal method is a promising technique which grows GaN in a supercritical ammonia solution at high temperatures (> 500 C) and pressures (> 1000 atm). Improvements to growth rate are needed to reduce cost, while improvements in purity reduce absorption loses for optical applications. This book details advances for this technique and the improvements resulting from the use of a silver liner within the growth systems for the process.
Book Synopsis Technology of Gallium Nitride Crystal Growth by : Dirk Ehrentraut
Download or read book Technology of Gallium Nitride Crystal Growth written by Dirk Ehrentraut and published by Springer. This book was released on 2010-06-24 with total page 326 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book discusses the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production.
Book Synopsis Synthesis and Processing of Nanocrystalline Aluminum Nitride by : Matthew Albert Duarte
Download or read book Synthesis and Processing of Nanocrystalline Aluminum Nitride written by Matthew Albert Duarte and published by . This book was released on 2016 with total page 56 pages. Available in PDF, EPUB and Kindle. Book excerpt: Synthesis, processing and characterization of nanocrystalline aluminum nitride has been systematically studied. Non-carbon based gas nitridation was used to reduce nanocrystalline [Gamma]-alumina, having a grain size of ~80 nm. Single phase aluminum nitride powder was obtained at firing temperatures of 1200°C. Further processing of AlN powders was performed by CAPAD (Current Activated Pressure Assisted Densification) to obtain dense single phase aluminum nitride. Dense bulk aluminum nitride was obtained at temperatures of 1300°C. The reason we were able to obtain dense AlN at such temperatures is due to the nature of the nanocrystalline powders.
