Read Books Online and Download eBooks, EPub, PDF, Mobi, Kindle, Text Full Free.
Substrate Engineering For Defect Reduction And Microsctructure Control In The Growth Of Indium Arsenide On 100 Gallium Arsenide
Download Substrate Engineering For Defect Reduction And Microsctructure Control In The Growth Of Indium Arsenide On 100 Gallium Arsenide full books in PDF, epub, and Kindle. Read online Substrate Engineering For Defect Reduction And Microsctructure Control In The Growth Of Indium Arsenide On 100 Gallium Arsenide ebook anywhere anytime directly on your device. Fast Download speed and no annoying ads. We cannot guarantee that every ebooks is available!
Book Synopsis Substrate Engineering for Defect Reduction and Microsctructure Control in the Growth of Indium Arsenide on (100) Gallium Arsenide by : Suryanarayanan Ganesan
Download or read book Substrate Engineering for Defect Reduction and Microsctructure Control in the Growth of Indium Arsenide on (100) Gallium Arsenide written by Suryanarayanan Ganesan and published by . This book was released on 2006 with total page 222 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Bandstructure Engineering of Indium Arsenide Quantum Dots in Gallium Arsenide Antimonide Barriers for Photovoltaic Applications by : Jonathan Boyle
Download or read book Bandstructure Engineering of Indium Arsenide Quantum Dots in Gallium Arsenide Antimonide Barriers for Photovoltaic Applications written by Jonathan Boyle and published by . This book was released on 2008 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Increasing the efficiency of solar cell technology is one of the current research aims being under taken in order to help supply growing global energy demands. The research presented in this thesis contributes to the current materials hunt for suitable candidates for an Intermediate Band Solar Cell (IBSC). A background on other "third generation" photovoltaic concepts along with details about the IBSC concept is also presented. The research presented in this thesis contains theoretical and experimental work on a quantum dot (QD) nanostructure. The structure contains a GaAs substrate, followed by a 10 nm GaAs 1-x Sb x barrier, a single layer of InAs QDs, followed by another 10 nm GaAs 1-x Sb x barrier and then capped by a thick GaAs layer. Theoretical calculations that accounted for strain were performed for a range of Sb compositions (x=0.04, 0.12, 0.14, 0.18, 0.22, 0.26, 0.30), for a QD of modeled size of 40 nm x 40 nm x 5 nm (WxLxH) at 4.4 K. Three samples containing the above structure were also studied by time integrated- and time resolved-photoluminescence. The samples had a 12% Sb concentration, but varied by their GaAs 1-x Sb x barrier thicknesses. Sample A had symmetric Sb barriers of 20 nm for the bottom and 20 nm for the top. Sample B had symmetric barriers of 10 nm for the bottom and 10 nm for the top, while sample C had asymmetric barriers of 30 nm for the bottom and 10 nm for the top. The samples were studied for temperature dependence for the range of 4.4 K to 300 K, and for excitation dependence from ~3 W/cm 2 -225 W/cm 2.
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2002 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Molecular-beam Epitaxial Growth and Characterization of Aluminum Gallium Arsenide/indium Gallium Arsenide Single Quantum-well Modulation-doped Field-effect Transistor Structures by : David Constantine Radulescu
Download or read book Molecular-beam Epitaxial Growth and Characterization of Aluminum Gallium Arsenide/indium Gallium Arsenide Single Quantum-well Modulation-doped Field-effect Transistor Structures written by David Constantine Radulescu and published by . This book was released on 1988 with total page 578 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Defect Generation Mechanisms in MOCVD-Grown Gallium Arsenide Heteroepitaxial Layers on Silicon Substrates by : Thomas George
Download or read book Defect Generation Mechanisms in MOCVD-Grown Gallium Arsenide Heteroepitaxial Layers on Silicon Substrates written by Thomas George and published by . This book was released on 1989 with total page 328 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Growth of Gallium Arsenide Using Ion Cluster Beam Technology by : Robert L. Adams
Download or read book Growth of Gallium Arsenide Using Ion Cluster Beam Technology written by Robert L. Adams and published by . This book was released on 1986 with total page 51 pages. Available in PDF, EPUB and Kindle. Book excerpt: The growth of single crystal gallium arsenide (GaAs) epitaxial films on high resistivity GaAs substrates has been demonstrated. Films were grown at substrate temperatures from 600C down to 400C with thicknesses from 3000A to 5 micron. Growth rates were typically 150A/minute at all growth temperatures with thickness uniformity of + or - 5% over the sample (typical sample size 0.7in. X 0.7in.). The thickness was measured by a standard cleave and stain method. Single crystal behavior was shown using x-ray diffraction and SEM channeling patterns. Auger analysis was done on the films and showed characteristics comparable to those of the substrate. Hall data taken on the samples found the samples to be n-type, but with very low mobility. The low mobility is the result of defects grown into the structure because of high energy ions impinging on the surface. The energy of the ions was in the range of 100 to 1000 ev because of the small cluster size. The cluster had sizes of 10-50 atoms instead of the desired 500-2000 atoms/cluster. This smaller cluster is likely due to non-uniform heating of the crucibles by the e-beam filament. In addition, the diameter/length of the opening in the nozzle was 1:1. Recent work suggests a 1:10 ratio will allow more interactions and thus enhance the possibility of forming larger clusters. With larger clusters, lower energy per ion will be possible and the native defects will be reduced.
Book Synopsis Gallium Arsenide on Silicon Substrate by : Young-Soon Kim
Download or read book Gallium Arsenide on Silicon Substrate written by Young-Soon Kim and published by . This book was released on 2019-05-31 with total page 196 pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: semiconductor wafers Dissertation Discovery Company and University of Florida are dedicated to making scholarly works more discoverable and accessible throughout the world. This dissertation, "Gallium Arsenide on Silicon Substrate" by Young-Soon Kim, was obtained from University of Florida and is being sold with permission from the author. A digital copy of this work may also be found in the university's institutional repository, IR@UF. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation.
Book Synopsis The Optimization of the Growth on (111) Gallium Arsenide and (111) Indium Phosphide Substrates by Molecular Beam Epitaxy by : Hock Huat Yeo
Download or read book The Optimization of the Growth on (111) Gallium Arsenide and (111) Indium Phosphide Substrates by Molecular Beam Epitaxy written by Hock Huat Yeo and published by . This book was released on 2001 with total page 94 pages. Available in PDF, EPUB and Kindle. Book excerpt: Excellent material has been grown on (111) surface using molecular beam epitaxy. This dissertation covers the optimal growth condition of (111)B GaAs and (111)B InP. With electrostatic analysis plus semiempirical approach, a simple equation for estimating the 2DEG sheet density is also presented in this dissertation.
Book Synopsis Distribution and Control of Misfit Dislocations in Indium Gallium Arsenide Layers Grown on Gallium Arsenide Substrates by : Glyn MacPherson
Download or read book Distribution and Control of Misfit Dislocations in Indium Gallium Arsenide Layers Grown on Gallium Arsenide Substrates written by Glyn MacPherson and published by . This book was released on 1995 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Growth of Highly Ordered Indium Arsenide/gallium Arsenide and Indium Gallium Arsenide/gallium Arsenide Quantum Dots on Nano-patterned Substrates by MBE. by : Wei Guo
Download or read book Growth of Highly Ordered Indium Arsenide/gallium Arsenide and Indium Gallium Arsenide/gallium Arsenide Quantum Dots on Nano-patterned Substrates by MBE. written by Wei Guo and published by . This book was released on 2008 with total page 244 pages. Available in PDF, EPUB and Kindle. Book excerpt: Iron-catalyzed free radical generation has been proposed to contribute to oxidative stress and toxicity upon exposure to ambient particulate and amphibole asbestos fibers. Simple acellular assays were validated and used to show that toxicologically significant amounts of iron can be mobilized from a diverse set of commercial nanotube samples in the presence of ascorbate and the chelating agent ferrozine. The redox activity was examined by plasmid DNA breakage. Techniques were applied to avoid or remove this bioavailable metal. Potentially responsible mechanisms and optimized acid treatment protocols for free metal in "purified" samples are discussed.
Book Synopsis Gallium Arsenide Technology by : David K. Ferry
Download or read book Gallium Arsenide Technology written by David K. Ferry and published by Sams Technical Publishing. This book was released on 1985 with total page 504 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis The Molecular Beam Epitaxial Growth and Characterization of Indium Gallium Arsenide and Silicon Substrates by : David Ian Westwood
Download or read book The Molecular Beam Epitaxial Growth and Characterization of Indium Gallium Arsenide and Silicon Substrates written by David Ian Westwood and published by . This book was released on 1990 with total page 432 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Solution Growth of Gallium Arsenide by : Stephen Ingalls Long
Download or read book Solution Growth of Gallium Arsenide written by Stephen Ingalls Long and published by . This book was released on 1969 with total page 246 pages. Available in PDF, EPUB and Kindle. Book excerpt: The theory and experimental procedure for growth of epitaxial layers of GaAs by the solution regrowth method is described. Both GaAs of low carrier concentration with high mobility and intentionally doped GaAs layers, suitable for application to Gunn effect devices, can be grown by this process. Several methods for the evaluation of the thickness, doping profiles and mobility of the GaAs layers are discussed. The limitations of these methods are also presented. Several working Gunn devices were fabricated either with solution grown contacts on commercially made epitaxial active layers or with solution grown active layers. (Author).
Book Synopsis The Molecular Beam Epitaxial Growth and Characterization of Indium Gallium Arsenide on Gallium Arsenide and Silicon Substrates by : David Ian Westwood
Download or read book The Molecular Beam Epitaxial Growth and Characterization of Indium Gallium Arsenide on Gallium Arsenide and Silicon Substrates written by David Ian Westwood and published by . This book was released on 1991 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Defect control in gallium arsenide for improved device performance by : David Michael Wong
Download or read book Defect control in gallium arsenide for improved device performance written by David Michael Wong and published by . This book was released on 1990 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Gallium Arsenide on Silicon Substrate by : Young-Soon Kim
Download or read book Gallium Arsenide on Silicon Substrate written by Young-Soon Kim and published by . This book was released on 1990 with total page 366 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Defective states in semi-insulating gallium arsenide substrates by :
Download or read book Defective states in semi-insulating gallium arsenide substrates written by and published by . This book was released on 1909 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Semi-insulating gallium arsenide substrates are widely used for microwave discrete devices and integrated circuits. However, the performance of the above devices may be significantly affected by the substrate quality, i.e. crystal defects and related deep levels. Consequently, a careful characterization of substrates is mandatory to improve both device performance and production yields. In this work we have investigated gallium arsenide substrates from different suppliers and/or differently processed. To these substrates we have applied, discussed and compared different methodologies (current-voltage and capacitance-voltage characteristics as well as spectroscopic methods) to characterize the many deep levels which are either present in as-received semi-insulating substrates or induced by device processing such as ion implantation and the subsequent thermal annealing.
