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Study Of Iii V Semiconductor Nanostructures By Cross Sectional Scanning Tunneling Microscopy
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Book Synopsis Study of III-V Semiconductor Nanostructures by Cross-sectional Scanning Tunneling Microscopy by : Peter Offermans
Download or read book Study of III-V Semiconductor Nanostructures by Cross-sectional Scanning Tunneling Microscopy written by Peter Offermans and published by . This book was released on 2005 with total page 129 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Direct Profiling of III/V Semiconductor Nanostructures at the Atomic Level by Cross-sectional Scanning Tunneling Microscopy by : Dominique Maria Bruls
Download or read book Direct Profiling of III/V Semiconductor Nanostructures at the Atomic Level by Cross-sectional Scanning Tunneling Microscopy written by Dominique Maria Bruls and published by . This book was released on 2003 with total page 119 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Scanning Tunneling Microscopy Studies of Nano-scale Properties of III/V Semiconductor Heterostructures by : Songlin Zuo
Download or read book Scanning Tunneling Microscopy Studies of Nano-scale Properties of III/V Semiconductor Heterostructures written by Songlin Zuo and published by . This book was released on 2001 with total page 380 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Nitrogen Containing III-V Semiconductor Surfaces and Nanostructures Studied by Scanning Tunneling Microscopy and Spectroscopy by :
Download or read book Nitrogen Containing III-V Semiconductor Surfaces and Nanostructures Studied by Scanning Tunneling Microscopy and Spectroscopy written by and published by . This book was released on 2009 with total page 138 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Surface Modification of III-V Nanostructures Studied by Low-temperature Scanning Tunneling Microscopy by : Yi Liu
Download or read book Surface Modification of III-V Nanostructures Studied by Low-temperature Scanning Tunneling Microscopy written by Yi Liu and published by . This book was released on 2022 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: In the past decade, driven by the demand for materials with high performance for next-generation semiconductor devices (e.g., for quantum computing), the exploration of III-V semiconductor materials and the design of improved devices based on these materials has extended to the nanometer scale, with several highlights in the studies of quantum wells, quantum dots, and nanowires (NW) in recent years. On the path of seeking smaller scale devices, the lateral scale is usually limited by the spatial resolution of the lithographic processes. Now, the challenge lies in the combination of semiconductor nanoscale structure with the desired electronic properties. Scaling down material synthesis to crystalline structures of only few atoms in size and precisely positioned in device configuration has not been realized so far. Moreover, the compatibility for large-scale industrial device processing is also challenging. In this dissertation, I present the surface characterization and studies of the modification of nanostructures on III-V semiconductor surfaces, with the techniques of low temperature scanning tunneling microscopy/spectroscopy (LT-STM/S) and X-ray photoelectron spectroscopy (XPS). Two main topics are Bi incorporation in GaAs (and InAs) surfaces and self-driven formation of nanostructures with atomic-scale precision. Different zinc blende and wurtzite crystal planes have been investigated, including the {11-20}- type facet which for GaAs and InAs uniquely exists on the side walls of NWs and nanoplatelets. The utilization of the tailored facets of NWs as templates for Bi-induced nanostructure formation has been explored as well. Bi-introduced low-dimensional nanostructures and exotic electronic states in III-V semiconductor systems have been investigated. The covalent bonds of Bi atoms in the self-formed Bi nanostructures on III-V substrates can vary depending on the substrate template and preparation condition, such as the Ga-Bi bonds in the 1D chain and 2D island nanostructures on Wz{11-20}-type facets on GaAs NWs. The possibility of tuning the self-formed III-V:Bi nanostructures in a more controllable way has been explored in this thesis. A significant high coverage of Bi on III-V semiconductor surface has been achieved. The observed variable bandgap and Bi-induced surface states are promising for applications in surface bandgap engineering and quantum technology components.
Book Synopsis Physics of Semiconductors 2002 by : J.H Davies
Download or read book Physics of Semiconductors 2002 written by J.H Davies and published by CRC Press. This book was released on 2003-05-01 with total page 330 pages. Available in PDF, EPUB and Kindle. Book excerpt: The 26th International Conference on the Physics of Semiconductors was held from 29 July to 2 August 2002 at the Edinburgh International Conference Centre. It is the premier meeting in the field of semiconductor physics and attracted over 1000 participants from leading academic, governmental and industrial institutions in some 50 countries around the world. Plenary and invited papers (34) have been printed in the paper volume, and all submitted papers (742) are included on the CD-ROM. These proceedings provide an international perspective on the latest research and a review of recent developments in semiconductor physics. Topics range from growth and properties of bulk semiconductors to the optical and transport properties of semiconductor nanostructures. There are 742 papers, mostly arranged in chapters on Bulk, dynamics, defects and impurities, growth (147); Heterostructures, quantum wells, superlattices - optical (138); Heterostructures, quantum wells, superlattices - transport (97); Quantum nanostructures - optical (120); Quantum nanostructures - transport (85); New materials and concepts (52); Novel devices (43); and Spin and magnetic effects (48). A number of trends were identified in setting up the overall programme of the conference. There were significant contributions from new directions of research such as nanostructures and one-dimensional physics; spin effects and ferromagnetism; and terahertz and subband physics. These complemented areas in which the conference has traditional strengths, such as defects and bulk materials; crystal growth; quantum transport; and optical properties. As a record of a conference that covers the whole range of semiconductor physics, this book is an essential reference for researchers working on semiconductor physics, device physics, materials science, chemistry, and electronic and electrical engineering.
Book Synopsis The Physics of Semiconductors by : Marius Grundmann
Download or read book The Physics of Semiconductors written by Marius Grundmann and published by Springer Nature. This book was released on 2021-03-06 with total page 905 pages. Available in PDF, EPUB and Kindle. Book excerpt: The 4th edition of this highly successful textbook features copious material for a complete upper-level undergraduate or graduate course, guiding readers to the point where they can choose a specialized topic and begin supervised research. The textbook provides an integrated approach beginning from the essential principles of solid-state and semiconductor physics to their use in various classic and modern semiconductor devices for applications in electronics and photonics. The text highlights many practical aspects of semiconductors: alloys, strain, heterostructures, nanostructures, amorphous semiconductors, and noise, which are essential aspects of modern semiconductor research but often omitted in other textbooks. This textbook also covers advanced topics, such as Bragg mirrors, resonators, polarized and magnetic semiconductors, nanowires, quantum dots, multi-junction solar cells, thin film transistors, and transparent conductive oxides. The 4th edition includes many updates and chapters on 2D materials and aspects of topology. The text derives explicit formulas for many results to facilitate a better understanding of the topics. Having evolved from a highly regarded two-semester course on the topic, The Physics of Semiconductors requires little or no prior knowledge of solid-state physics. More than 2100 references guide the reader to historic and current literature including original papers, review articles and topical books, providing a go-to point of reference for experienced researchers as well.
Book Synopsis Studies of Novel Nanostructures by Cross-sectional Scanning Tunneling Microscopy by : Lassana Ouattara
Download or read book Studies of Novel Nanostructures by Cross-sectional Scanning Tunneling Microscopy written by Lassana Ouattara and published by . This book was released on 2006 with total page 41 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Characterization of Semiconductor Heterostructures and Nanostructures by : Giovanni Agostini
Download or read book Characterization of Semiconductor Heterostructures and Nanostructures written by Giovanni Agostini and published by Elsevier. This book was released on 2011-08-11 with total page 501 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the last couple of decades, high-performance electronic and optoelectronic devices based on semiconductor heterostructures have been required to obtain increasingly strict and well-defined performances, needing a detailed control, at the atomic level, of the structural composition of the buried interfaces. This goal has been achieved by an improvement of the epitaxial growth techniques and by the parallel use of increasingly sophisticated characterization techniques and of refined theoretical models based on ab initio approaches. This book deals with description of both characterization techniques and theoretical models needed to understand and predict the structural and electronic properties of semiconductor heterostructures and nanostructures. Comprehensive collection of the most powerful characterization techniques for semiconductor heterostructures and nanostructures Most of the chapters are authored by scientists that are among the top 10 worldwide in publication ranking of the specific field Each chapter starts with a didactic introduction on the technique The second part of each chapter deals with a selection of top examples highlighting the power of the specific technique to analyze the properties of semiconductors
Book Synopsis Cross-sectional Scanning Tunneling Micorscopy of III-V Semiconductor Nanowires by :
Download or read book Cross-sectional Scanning Tunneling Micorscopy of III-V Semiconductor Nanowires written by and published by . This book was released on 2007 with total page 58 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Handbook of Instrumentation and Techniques for Semiconductor Nanostructure Characterization by : Richard Haight
Download or read book Handbook of Instrumentation and Techniques for Semiconductor Nanostructure Characterization written by Richard Haight and published by World Scientific. This book was released on 2012 with total page 346 pages. Available in PDF, EPUB and Kindle. Book excerpt: As we delve more deeply into the physics and chemistry of functional materials and processes, we are inexorably driven to the nanoscale. And nowhere is the development of instrumentation and associated techniques more important to scientific progress than in the area of nanoscience. The dramatic expansion of efforts to peer into nanoscale materials and processes has made it critical to capture and summarize the cutting-edge instrumentation and techniques that have become indispensable for scientific investigation in this arena. This Handbook is a key resource developed for scientists, engineers and advanced graduate students in which eminent scientists present the forefront of instrumentation and techniques for the study of structural, optical and electronic properties of semiconductor nanostructures.
Book Synopsis Advances in Semiconductor Nanostructures by : Alexander V. Latyshev
Download or read book Advances in Semiconductor Nanostructures written by Alexander V. Latyshev and published by Elsevier. This book was released on 2016-11-10 with total page 553 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications focuses on the physical aspects of semiconductor nanostructures, including growth and processing of semiconductor nanostructures by molecular-beam epitaxy, ion-beam implantation/synthesis, pulsed laser action on all types of III–V, IV, and II–VI semiconductors, nanofabrication by bottom-up and top-down approaches, real-time observations using in situ UHV-REM and high-resolution TEM of atomic structure of quantum well, nanowires, quantum dots, and heterostructures and their electrical, optical, magnetic, and spin phenomena. The very comprehensive nature of the book makes it an indispensable source of information for researchers, scientists, and post-graduate students in the field of semiconductor physics, condensed matter physics, and physics of nanostructures, helping them in their daily research. Presents a comprehensive reference on the novel physical phenomena and properties of semiconductor nanostructures Covers recent developments in the field from all over the world Provides an International approach, as chapters are based on results obtained in collaboration with research groups from Russia, Germany, France, England, Japan, Holland, USA, Belgium, China, Israel, Brazil, and former Soviet Union countries
Book Synopsis Interpreting Interfacial Structure in Cross-Sectional STM Images of III-V Semiconductor Heterostructures by :
Download or read book Interpreting Interfacial Structure in Cross-Sectional STM Images of III-V Semiconductor Heterostructures written by and published by . This book was released on 2000 with total page 12 pages. Available in PDF, EPUB and Kindle. Book excerpt: Using model GaSb-InAs heterostructures, we have systematically examined how cross-sectional scanning tunneling microscopy (XSTM) can be used for the study of III-V heterostructure interfaces. The interpretation of interfacial structure in XSTM images is impeded by the fact that only every other III or V plane as grown on the (001) substrate is seen in each image. We show how this structural artifact affects spectral analyses of interfacial roughness, preventing an accurate analysis when interfaces are just a few layers wide. Additional complications arise due to the inequivalence of the (110) and (110) cleavage surfaces and the dependence of interfacial bond orientation on growth order. By taking advantage of the different bond orientations on the two cleavage surfaces, we demonstrate that the contrast observed at the interfacial layers in this system is caused primarily by the geometry of the interfacial bonds, not electronic structure differences. Finally, we illustrate how careful design of model heterostructures can be used to circumvent many limitations of XSTM, and thereby allow one to obtain detailed atomic-scale information about all the growth layers in the structure.
Book Synopsis Advanced Transmission Electron Microscopy Studies of III-V Semiconductor Nanostructures by : Chun Maw Tey
Download or read book Advanced Transmission Electron Microscopy Studies of III-V Semiconductor Nanostructures written by Chun Maw Tey and published by . This book was released on 2006 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Bismuth-Containing Alloys and Nanostructures by : Shumin Wang
Download or read book Bismuth-Containing Alloys and Nanostructures written by Shumin Wang and published by Springer. This book was released on 2019-07-03 with total page 399 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focuses on novel bismuth-containing alloys and nanostructures, covering a wide range of materials from semiconductors, topological insulators, silica optical fibers and to multiferroic materials. It provides a timely overview of bismuth alloys and nanostructures, from material synthesis and physical properties to device applications and also includes the latest research findings. Bismuth is considered to be a sustainable and environmentally friendly element, and has received increasing attention in a variety of innovative research areas in recent years. The book is intended as a reference resource and textbook for graduate students and researchers working in these fields.
Book Synopsis Metalorganic Vapor Phase Epitaxy (MOVPE) by : Stuart Irvine
Download or read book Metalorganic Vapor Phase Epitaxy (MOVPE) written by Stuart Irvine and published by John Wiley & Sons. This book was released on 2019-08-27 with total page 584 pages. Available in PDF, EPUB and Kindle. Book excerpt: Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).
Book Synopsis Scanning Tunneling Microscopy of III-V Semiconductors by : Stephen Lawrence Skala
Download or read book Scanning Tunneling Microscopy of III-V Semiconductors written by Stephen Lawrence Skala and published by . This book was released on 1994 with total page 166 pages. Available in PDF, EPUB and Kindle. Book excerpt: Scanning tunneling microscopy (STM) has been used to study the (100) surface of GaAs and the (110) plane of cross-sectioned GaAs/AlGaAs heterolayers. Observation of the GaAs(100) surface with STM has characterized the c(8x2) reconstruction and shows that the c(8x2) consists of ordered (4x2) subunits. Each (4x2) subunit contains two As and two Ga dimers, contrary to previous descriptions which include only Ga dimers. This model of the c(8x2) reconstruction also agrees well with results from other experimental techniques. The (2x6) reconstruction is observed to be considerably more complex than the c(8x2) and bears little resemblance to either the c(2x8) or c(8x2) reconstructions. STM investigations on vicinal GaAs(100) substrates have clearly shown that steps migrate to form arrays of terraces $sim$175 A wide separated by regions of bunched steps on 2$sp{rm o}$ toward (110) oriented substrates after annealing to a temperature high enough to form a mixed c(8x2) and (2x6) reconstruction. The coexistence of the two reconstructions is critical to step bunching as the c(8x2) is observed to occupy only the terraces while the (2x6) exists predominately across the steps. Bunched step arrays are not observed on 2$sp{rm o}$ toward (110) oriented substrates, and a considerably higher ratio of (2x6) reconstructions is present on these substrates than on the 2$sp{rm o}$ toward (110) oriented substrates. STM results on cross-sectioned GaAs/AlGaAs heterolayers show differences in current contrast between p- and n-type layers which can be explained by band bending caused by charged oxygen adsorbates on AlGaAs.
