Study Of Iii Nitrides Heterostructures Grown By Molecular Beam Epitaxy

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Study of III -Nitrides Heterostructures Grown by Molecular Beam Epitaxy

Author : Che Woei Chin
Publisher : LAP Lambert Academic Publishing
ISBN 13 : 9783844392678
Total Pages : 124 pages
Book Rating : 4.3/5 (926 download)

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Book Synopsis Study of III -Nitrides Heterostructures Grown by Molecular Beam Epitaxy by : Che Woei Chin

Download or read book Study of III -Nitrides Heterostructures Grown by Molecular Beam Epitaxy written by Che Woei Chin and published by LAP Lambert Academic Publishing. This book was released on 2011-05 with total page 124 pages. Available in PDF, EPUB and Kindle. Book excerpt: Various techniques have been used to grow III-nitride heterostructures including metalorganic vapor deposition, hydride vapor epitaxy and molecular beam epitaxy (MBE). Among these techniques, MBE presents a number of advantages such as precise control of layer thickness and composition. MBE is a highly sophisticated system which thin film quality is sensitive to the growth parameters. From the literature, a systematic growth procedure has not been well-documented. This book presents an in depth understanding of MBE growth mechanism which is essential for thin film quality improvement. Detailed study on the growth mechanism allows the acquisition of the fundamental knowledge in growing precise optoelectronics device structures. This book focuses on the study of III-nitride thin films grown by MBE on various aspects, supported by analysis using a variety of structural and optical characterization techniques. The book starts with the introduction of the MBE architecture, follows by the detailed growth procedures. The characterization and analysis of various III-nitride thin films grown on Si and sapphire will be presented in the last part of the book.

Molecular Beam Epitaxy

Author : Mohamed Henini
Publisher : Elsevier
ISBN 13 : 0128121378
Total Pages : 790 pages
Book Rating : 4.1/5 (281 download)

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Book Synopsis Molecular Beam Epitaxy by : Mohamed Henini

Download or read book Molecular Beam Epitaxy written by Mohamed Henini and published by Elsevier. This book was released on 2018-06-27 with total page 790 pages. Available in PDF, EPUB and Kindle. Book excerpt: Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and ‘how to’ on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. Condenses the fundamental science of MBE into a modern reference, speeding up literature review Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community

III-nitride

Author : Zhe Chuan Feng
Publisher : Imperial College Press
ISBN 13 : 1860949037
Total Pages : 442 pages
Book Rating : 4.8/5 (69 download)

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Book Synopsis III-nitride by : Zhe Chuan Feng

Download or read book III-nitride written by Zhe Chuan Feng and published by Imperial College Press. This book was released on 2006 with total page 442 pages. Available in PDF, EPUB and Kindle. Book excerpt: III-Nitride semiconductor materials OCo (Al, In, Ga)N OCo are excellent wide band gap semiconductors very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved recently, and current knowledge and data published have to be modified and upgraded. This book presents the new developments and achievements in the field. Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory or experiment. The III-Nitride-based industry is building up and new economic developments from these materials are promising. It is expected that III-Nitride-based LEDs may replace traditional light bulbs to realize a revolution in lighting. This book is a valuable source of information for engineers, scientists and students working towards such goals. Sample Chapter(s). Chapter 1: Hydride Vapor Phase Epitaxy of Group III Nitride Materials (540 KB). Contents: Hydride Vapor Phase Epitaxy of Group III Nitride Materials (V Dmitriev & A Usikov); Planar MOVPE Technology for Epitaxy of III-Nitride Materials (M Dauelsberg et al.); Close-Coupled Showerhead MOCVD Technology for the Epitaxy of GaN and Related Materials (E J Thrush & A R Boyd); Molecular Beam Epitaxy for III-N Materials (H Tang & J Webb); Growth and Properties of Nonpolar GaN Films and Heterostructures (Y J Sun & O Brandt); Indium-Nitride Growth by High-Pressure CVD: Real-Time and Ex-Situ Characterization (N Dietz); A New Look on InN (L-W Tu et al.); Growth and Optical/Electrical Properties of Al x Ga 1-x N Alloys in the Full Composition Range (F Yun); Optical Investigation of InGaN/GaN Quantum Well Structures Grown by MOCVD (T Wang); Clustering Nanostructures and Optical Characteristics in InGaN/GaN Quantum-Well Structures with Silicon Doping (Y-C Cheng et al.); III-Nitrides Micro- and Nano-Structures (H M Ng & A Chowdhury); New Developments in Dilute Nitride Semiconductor Research (W Shan et al.). Readership: Scientists; material growers and evaluators; device design, processing engineers; postgraduate and graduate students in electrical & electronic engineering and materials engineering.

III-Nitride Semiconductor Optoelectronics

Author :
Publisher : Academic Press
ISBN 13 : 012809723X
Total Pages : 490 pages
Book Rating : 4.1/5 (28 download)

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Book Synopsis III-Nitride Semiconductor Optoelectronics by :

Download or read book III-Nitride Semiconductor Optoelectronics written by and published by Academic Press. This book was released on 2017-01-05 with total page 490 pages. Available in PDF, EPUB and Kindle. Book excerpt: III-Nitride Semiconductor Optoelectronics covers the latest breakthrough research and exciting developments in the field of III-nitride compound semiconductors. It includes important topics on the fundamentals of materials growth, characterization, and optoelectronic device applications of III-nitrides. Bulk, quantum well, quantum dot, and nanowire heterostructures are all thoroughly explored. Contains the latest breakthrough research in III-nitride optoelectronics Provides a comprehensive presentation that covers the fundamentals of materials growth and characterization and the design and performance characterization of state-of-the-art optoelectronic devices Presents an in-depth discussion on III-nitride bulk, quantum well, quantum dot, and nanowire technologies

The Study of Growth and Characterization of Group III Nitride Semiconductor by RF Plasma-assisted Molecular Beam Epitaxy

Author : 黃志豪
Publisher :
ISBN 13 :
Total Pages : 111 pages
Book Rating : 4.:/5 (896 download)

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Book Synopsis The Study of Growth and Characterization of Group III Nitride Semiconductor by RF Plasma-assisted Molecular Beam Epitaxy by : 黃志豪

Download or read book The Study of Growth and Characterization of Group III Nitride Semiconductor by RF Plasma-assisted Molecular Beam Epitaxy written by 黃志豪 and published by . This book was released on 2004 with total page 111 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Dilute Nitride Semiconductors

Author : Mohamed Henini
Publisher : Elsevier
ISBN 13 : 0080455999
Total Pages : 648 pages
Book Rating : 4.0/5 (84 download)

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Book Synopsis Dilute Nitride Semiconductors by : Mohamed Henini

Download or read book Dilute Nitride Semiconductors written by Mohamed Henini and published by Elsevier. This book was released on 2004-12-15 with total page 648 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field. It gives the reader easier access and better evaluation of future trends, Conveying important results and current ideas. Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community. The high speed lasers operating at wavelength of 1.3 μm and 1.55 μm are very important light sources in optical communications since the optical fiber used as a transport media of light has dispersion and attenuation minima, respectively, at these wavelengths. These long wavelengths are exclusively made of InP-based material InGaAsP/InP. However, there are several problems with this material system. Therefore, there has been considerable effort for many years to fabricate long wavelength laser structures on other substrates, especially GaAs. The manufacturing costs of GaAs-based components are lower and the processing techniques are well developed. In 1996 a novel quaternary material GaInAsN was proposed which could avoid several problems with the existing technology of long wavelength lasers. In this book, several leaders in the field of dilute nitrides will cover the growth and processing, experimental characterization, theoretical understanding, and device design and fabrication of this recently developed class of semiconductor alloys. They will review their current status of research and development. Dilute Nitrides (III-N-V) Semiconductors: Physics and Technology organises the most current available data, providing a ready source of information on a wide range of topics, making this book essential reading for all post graduate students, researchers and practitioners in the fields of Semiconductors and Optoelectronics Contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field Gives the reader easier access and better evaluation of future trends, conveying important results and current ideas Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community

Molecular Beam Epitaxy

Author : Hajime Asahi
Publisher : John Wiley & Sons
ISBN 13 : 111935501X
Total Pages : 510 pages
Book Rating : 4.1/5 (193 download)

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Book Synopsis Molecular Beam Epitaxy by : Hajime Asahi

Download or read book Molecular Beam Epitaxy written by Hajime Asahi and published by John Wiley & Sons. This book was released on 2019-04-15 with total page 510 pages. Available in PDF, EPUB and Kindle. Book excerpt: Covers both the fundamentals and the state-of-the-art technology used for MBE Written by expert researchers working on the frontlines of the field, this book covers fundamentals of Molecular Beam Epitaxy (MBE) technology and science, as well as state-of-the-art MBE technology for electronic and optoelectronic device applications. MBE applications to magnetic semiconductor materials are also included for future magnetic and spintronic device applications. Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics is presented in five parts: Fundamentals of MBE; MBE technology for electronic devices application; MBE for optoelectronic devices; Magnetic semiconductors and spintronics devices; and Challenge of MBE to new materials and new researches. The book offers chapters covering the history of MBE; principles of MBE and fundamental mechanism of MBE growth; migration enhanced epitaxy and its application; quantum dot formation and selective area growth by MBE; MBE of III-nitride semiconductors for electronic devices; MBE for Tunnel-FETs; applications of III-V semiconductor quantum dots in optoelectronic devices; MBE of III-V and III-nitride heterostructures for optoelectronic devices with emission wavelengths from THz to ultraviolet; MBE of III-V semiconductors for mid-infrared photodetectors and solar cells; dilute magnetic semiconductor materials and ferromagnet/semiconductor heterostructures and their application to spintronic devices; applications of bismuth-containing III–V semiconductors in devices; MBE growth and device applications of Ga2O3; Heterovalent semiconductor structures and their device applications; and more. Includes chapters on the fundamentals of MBE Covers new challenging researches in MBE and new technologies Edited by two pioneers in the field of MBE with contributions from well-known MBE authors including three Al Cho MBE Award winners Part of the Materials for Electronic and Optoelectronic Applications series Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics will appeal to graduate students, researchers in academia and industry, and others interested in the area of epitaxial growth.

III-Nitride Electronic Devices

Author : Rongming Chu
Publisher : Academic Press
ISBN 13 : 0128175443
Total Pages : 540 pages
Book Rating : 4.1/5 (281 download)

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Book Synopsis III-Nitride Electronic Devices by : Rongming Chu

Download or read book III-Nitride Electronic Devices written by Rongming Chu and published by Academic Press. This book was released on 2019-10 with total page 540 pages. Available in PDF, EPUB and Kindle. Book excerpt: III-Nitride Electronic Devices, Volume 102, emphasizes two major technical areas advanced by this technology: radio frequency (RF) and power electronics applications. The range of topics covered by this book provides a basic understanding of materials, devices, circuits and applications while showing the future directions of this technology. Specific chapters cover Electronic properties of III-nitride materials and basics of III-nitride HEMT, Epitaxial growth of III-nitride electronic devices, III-nitride microwave power transistors, III-nitride millimeter wave transistors, III-nitride lateral transistor power switch, III-nitride vertical devices, Physics-Based Modeling, Thermal management in III-nitride HEMT, RF/Microwave applications of III-nitride transistor/wireless power transfer, and more. Presents a complete review of III-Nitride electronic devices, from fundamental physics, to applications in two key technical areas - RF and power electronics Outlines fundamentals, reviews state-of-the-art circuits and applications, and introduces current and emerging technologies Written by a panel of academic and industry experts in each field

Study of Growth and Characterization of Group III Nitride Semiconductor on Sapphire/LAO Substrate by RF Plasma-assisted Molecular Beam Epitaxy

Download Study of Growth and Characterization of Group III Nitride Semiconductor on Sapphire/LAO Substrate by RF Plasma-assisted Molecular Beam Epitaxy PDF Online Free

Author : 謝佳和
Publisher :
ISBN 13 :
Total Pages : 122 pages
Book Rating : 4.:/5 (727 download)

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Book Synopsis Study of Growth and Characterization of Group III Nitride Semiconductor on Sapphire/LAO Substrate by RF Plasma-assisted Molecular Beam Epitaxy by : 謝佳和

Download or read book Study of Growth and Characterization of Group III Nitride Semiconductor on Sapphire/LAO Substrate by RF Plasma-assisted Molecular Beam Epitaxy written by 謝佳和 and published by . This book was released on 2009 with total page 122 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Nitride Semiconductors: Volume 482

Author : Materials Research Society. Meeting
Publisher :
ISBN 13 :
Total Pages : 1274 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Nitride Semiconductors: Volume 482 by : Materials Research Society. Meeting

Download or read book Nitride Semiconductors: Volume 482 written by Materials Research Society. Meeting and published by . This book was released on 1998-04-20 with total page 1274 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is on recent experimental and theoretical progress in the rapidly growing field of III-V nitrides. Issues related to crystal growth (bulk and thin films), structure and microstructure, formation of defects, doping, alloying, formation of heterostructures, determination of physical properties and device fabrication and evaluation are addressed. Papers show much progress in the growth and understanding of III-V nitrides and in the production of optoelectronic devices based on these materials. Most exciting is the fact that light-emitting diodes and laser diodes have now reached amazing levels of performance which forecasts a revolution in lighting, optical storage, printing, and display technologies. Topics include: crystal growth- bulk growth, early stages of epitaxy; crystal growth- MOCVD; growth techniques - MBE and HVPE; novel substrates and growth techniques; structural properties; electronic properties; luminescence and recombination; characterization, elemental and stress analysis; physical modelling; device processing, implantation, annealing; device characterization, contacts, degradation; and injection laser diodes and applications.

III-nitride

Author : Zhe Chuan Feng
Publisher : World Scientific
ISBN 13 : 1860946364
Total Pages : 442 pages
Book Rating : 4.8/5 (69 download)

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Book Synopsis III-nitride by : Zhe Chuan Feng

Download or read book III-nitride written by Zhe Chuan Feng and published by World Scientific. This book was released on 2006 with total page 442 pages. Available in PDF, EPUB and Kindle. Book excerpt: III-Nitride semiconductor materials - (Al, In, Ga)N are excellent wide band gap semiconductors. This book presents the various developments and achievements in the field. It is useful for engineers, scientists and students.

Molecular Beam Epitaxy

Author : Mohamed Henini
Publisher : Newnes
ISBN 13 : 0123918596
Total Pages : 745 pages
Book Rating : 4.1/5 (239 download)

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Book Synopsis Molecular Beam Epitaxy by : Mohamed Henini

Download or read book Molecular Beam Epitaxy written by Mohamed Henini and published by Newnes. This book was released on 2012-12-31 with total page 745 pages. Available in PDF, EPUB and Kindle. Book excerpt: This multi-contributor handbook discusses Molecular Beam Epitaxy (MBE), an epitaxial deposition technique which involves laying down layers of materials with atomic thicknesses on to substrates. It summarizes MBE research and application in epitaxial growth with close discussion and a ‘how to’ on processing molecular or atomic beams that occur on a surface of a heated crystalline substrate in a vacuum.MBE has expanded in importance over the past thirty years (in terms of unique authors, papers and conferences) from a pure research domain into commercial applications (prototype device structures and more at the advanced research stage). MBE is important because it enables new device phenomena and facilitates the production of multiple layered structures with extremely fine dimensional and compositional control. The techniques can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. This book covers the advances made by MBE both in research and mass production of electronic and optoelectronic devices. It includes new semiconductor materials, new device structures which are commercially available, and many more which are at the advanced research stage. Condenses fundamental science of MBE into a modern reference, speeding up literature review Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research Coverage of MBE as mass production epitaxial technology enhances processing efficiency and throughput for semiconductor industry and nanostructured semiconductor materials research community

Physics and Applications of Dilute Nitrides

Author : I. Buyanova
Publisher : CRC Press
ISBN 13 : 1482296497
Total Pages : 457 pages
Book Rating : 4.4/5 (822 download)

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Book Synopsis Physics and Applications of Dilute Nitrides by : I. Buyanova

Download or read book Physics and Applications of Dilute Nitrides written by I. Buyanova and published by CRC Press. This book was released on 2004-08-30 with total page 457 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since their development in the 1990s, it has been discovered that diluted nitrides have intriguing properties that are not only distinct from those of conventional semiconductor materials, but also are conducive to various applications in optoelectronics and photonics. The book examines these applications and presents a broad and in-depth look at t

Proceedings of the First Symposium on III-V Nitride Materials and Processes

Author : T. D. Moustakas
Publisher : The Electrochemical Society
ISBN 13 : 9781566771634
Total Pages : 250 pages
Book Rating : 4.7/5 (716 download)

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Book Synopsis Proceedings of the First Symposium on III-V Nitride Materials and Processes by : T. D. Moustakas

Download or read book Proceedings of the First Symposium on III-V Nitride Materials and Processes written by T. D. Moustakas and published by The Electrochemical Society. This book was released on 1996 with total page 250 pages. Available in PDF, EPUB and Kindle. Book excerpt:

III-V Nitrides

Author : Fernando A. Ponce
Publisher :
ISBN 13 :
Total Pages : 1290 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis III-V Nitrides by : Fernando A. Ponce

Download or read book III-V Nitrides written by Fernando A. Ponce and published by . This book was released on 1997 with total page 1290 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Iii-nitride Materials, Devices And Nano-structures

Author : Zhe Chuan Feng
Publisher : World Scientific
ISBN 13 : 1786343207
Total Pages : 424 pages
Book Rating : 4.7/5 (863 download)

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Book Synopsis Iii-nitride Materials, Devices And Nano-structures by : Zhe Chuan Feng

Download or read book Iii-nitride Materials, Devices And Nano-structures written by Zhe Chuan Feng and published by World Scientific. This book was released on 2017-04-20 with total page 424 pages. Available in PDF, EPUB and Kindle. Book excerpt: Group III-Nitrides semiconductor materials, including GaN, InN, AlN, InGaN, AlGaN and AlInGaN, i.e. (Al, In, Ga)N, are excellent semiconductors, covering the spectral range from deep ultraviolet (DUV) to UV, visible and infrared, with unique properties very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved in recent years for research and development (R&D) in these materials and devices, such as high-power and high brightness UV-blue-green-white light emitting diodes (LEDs), UV-blue-green laser diodes (LDs), photo-detectors and various optoelectronics and electronics devices and applications.The Nobel Prize in Physics 2014 was awarded jointly to Isamu Akasaki, Hiroshi Amano and Shuji Nakamura 'for the invention of efficient blue light-emitting diodes which has enabled bright and energy-saving white light sources'. Red and green diodes had been invented since 1960s-70s but without blue LED. Despite considerable efforts, the blue LED had remained a challenge for a long time. The success and inventions on GaN-based LEDs were revolutionary and benefiting for mankind. III-Nitrides-based industry has formed and acquired rapid developments over the world. Incandescent light bulbs lit the 20th century and the 21st century will be lit by LED lamps.Before this book, the editor has edited two books, III-Nitride Semiconductor Materials (2006) and III-Nitride Devices and Nanoengineering (2008), both published by ICP/WSP, in the fields of III-Nitride. The developments of these materials and devices are moving rapidly. Many data or knowledge, some even just published only recently, have been modified and needed to be upgraded. This new book, III-Nitride Materials, Devices and Nano-Structures as the third instalment, will cover the rapid new developments and achievements in the III-Nitride fields, particularly those made since 2009.

Chemical Vapour Deposition (CVD)

Author : Kwang-Leong Choy
Publisher : CRC Press
ISBN 13 : 1000691071
Total Pages : 492 pages
Book Rating : 4.0/5 (6 download)

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Book Synopsis Chemical Vapour Deposition (CVD) by : Kwang-Leong Choy

Download or read book Chemical Vapour Deposition (CVD) written by Kwang-Leong Choy and published by CRC Press. This book was released on 2019-06-07 with total page 492 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book offers a timely and complete overview on chemical vapour deposition (CVD) and its variants for the processing of nanoparticles, nanowires, nanotubes, nanocomposite coatings, thin and thick films, and composites. Chapters discuss key aspects, from processing, material structure and properties to practical use, cost considerations, versatility, and sustainability. The author presents a comprehensive overview of CVD and its potential in producing high performance, cost-effective nanomaterials and thin and thick films. Features Provides an up-to-date introduction to CVD technology for the fabrication of nanomaterials, nanostructured films, and composite coatings Discusses processing, structure, functionalization, properties, and use in clean energy, engineering, and biomedical grand challenges Covers thin and thick films and composites Compares CVD with other processing techniques in terms of structure/properties, cost, versatility, and sustainability Kwang-Leong Choy is the Director of the UCL Centre for Materials Discovery and Professor of Materials Discovery in the Institute for Materials Discovery at the University College London. She earned her D.Phil. from the University of Oxford, and is the recipient of numerous honors including the Hetherington Prize, Oxford Metallurgical Society Award, and Grunfeld Medal and Prize from the Institute of Materials (UK). She is an elected fellow of the Institute of Materials, Minerals and Mining, and the Royal Society of Chemistry.