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Author : 陳彥良
Publisher :
ISBN 13 :
Total Pages : 150 pages
Book Rating : 4.:/5 (749 download)
Download or read book Study of High-Mobility AlxGa1-xN/GaN Heterostructures Grown by Plasma-assisted Molecular Beam Epitaxy written by 陳彥良 and published by . This book was released on 2010 with total page 150 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Mohamed Henini
Publisher : Elsevier
ISBN 13 : 0128121378
Total Pages : 790 pages
Book Rating : 4.1/5 (281 download)
Download or read book Molecular Beam Epitaxy written by Mohamed Henini and published by Elsevier. This book was released on 2018-06-27 with total page 790 pages. Available in PDF, EPUB and Kindle. Book excerpt: Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and ‘how to’ on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. Condenses the fundamental science of MBE into a modern reference, speeding up literature review Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community
Author : Kyu-Hwan Shim
Publisher :
ISBN 13 :
Total Pages : 232 pages
Book Rating : 4.:/5 (39 download)
Download or read book Structural and Optical Properties of GaN-based Heterostructures Grown by Plasma Assisted Molecular Beam Epitaxy written by Kyu-Hwan Shim and published by . This book was released on 1997 with total page 232 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Jay Steven Brown
Publisher :
ISBN 13 : 9780542571657
Total Pages : 318 pages
Book Rating : 4.5/5 (716 download)
Download or read book Optical Characterization and Growth Investigation of Ga-adsorbate Mediated GaN/AlN Quantum Dot Heterostructures by Plasma-assisted Molecular Beam Epitaxy written by Jay Steven Brown and published by . This book was released on 2006 with total page 318 pages. Available in PDF, EPUB and Kindle. Book excerpt: The III-nitride semiconductors are attractive for a variety of electronic and optoelectronic applications, due to the large band-gap range (0.7 to 6.2 eV), high carrier mobility, and chemical stability. Spontaneous and piezoelectric polarization give rise to large internal electric fields in GaN/AlN heterostructures and are interesting for fundamental investigations and device applications. Quantum dots (QDs) are intensely studied for use as optical emitters in diverse applications ranging from quantum communications to enhancing the performance of conventional diodes and lasers because of their atomic-like density of states, enhanced free carrier capture, and tunable electronic bound states.
Author : Yue Hao
Publisher : CRC Press
ISBN 13 : 1315351838
Total Pages : 325 pages
Book Rating : 4.3/5 (153 download)
Download or read book Nitride Wide Bandgap Semiconductor Material and Electronic Devices written by Yue Hao and published by CRC Press. This book was released on 2016-11-03 with total page 325 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.
Author : Christiane Poblenz
Publisher :
ISBN 13 :
Total Pages : 342 pages
Book Rating : 4.:/5 (612 download)
Download or read book Growth of (In, Al)GaN Alloys by RF-plasma Assisted Molecular Beam Epitaxy for Application in High Electron Mobility Transistor Structures written by Christiane Poblenz and published by . This book was released on 2005 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt: An all-MBE growth process for AlGaN/GaN HEMTs on SiC was also developed utilizing an AlN nucleation layer and a two-step growth process for the GaN to reduce and control threading dislocation density. The GaN growth process was structurally and electrically optimized to achieve semi-insulating HEMT buffers. Two methods were developed to reduce buffer leakage. The first was through implementation of carbon doping via CBr4, and the second was by optimization of the AlN nucleation layer growth conditions in unintentionally doped (carbon-free) structures. Optimization of the direct-growth process and elimination of buffer leakage led to record output power densities in MBE-grown AlGaN/GaN HEMTs and device performance which is on par with state-of-the art HEMTs grown by metalorganic chemical vapor deposition (MOCVD).
Author : Yuxing Ren
Publisher :
ISBN 13 :
Total Pages : 0 pages
Book Rating : 4.:/5 (14 download)
Download or read book High-mobility 2DEGs at AlGaN/GaN Interfaces Grown by PA-MBE and the Transport Study written by Yuxing Ren and published by . This book was released on 2020 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: AlGaN/GaN high-mobility transistor (HEMT) has been attracting people's attention and is proved to have satisfactory performance due to its related properties such as high break-down voltage, high saturation velocity, high frequency, etc. Molecular Beam Epitaxy (MBE) is one of the methods used for growth of high-quality AlGaN/GaN heterostructure with a two-dimensional electron gas (2DEG) in between. The high mobility of the 2DEGs, which is essential for ideal device performance, is determined by the charge density of the 2DEG. It is influenced by not only Al composition and AlGaN thickness, but also by dislocation density and the MBE background impurity. In order to achieve a high mobility, the relationship of mobility and 2DEG charge density is studied systematically on samples with various Al composition and AlGaN thickness grown by plasma-assisted MBE. Hall measurement is adopted for the measurement of 2DEG mobility and corresponding charge density. GaN bulk substrate and GaN template substrate with different dislocation densities are used for MBE growth as a comparison study on the influence of dislocation density. A gate control method is also explored on one specific sample with fixed dislocation density and background impurity to experimentally study the relationship of mobility and 2DEG density. Temperature-dependent Hall measurement is conducted to study transport property at low-temperature where the mobility is mainly limited by dislocation and background impurity rather than phonons. By analyzing the experimental data and comparing with theoretical calculations, the influence of dislocation density and background impurity is explained.
Author : Qiliang Li
Publisher : MDPI
ISBN 13 : 3039212257
Total Pages : 242 pages
Book Rating : 4.0/5 (392 download)
Download or read book Nanoelectronic Materials, Devices and Modeling written by Qiliang Li and published by MDPI. This book was released on 2019-07-15 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt: As CMOS scaling is approaching the fundamental physical limits, a wide range of new nanoelectronic materials and devices have been proposed and explored to extend and/or replace the current electronic devices and circuits so as to maintain progress with respect to speed and integration density. The major limitations, including low carrier mobility, degraded subthreshold slope, and heat dissipation, have become more challenging to address as the size of silicon-based metal oxide semiconductor field effect transistors (MOSFETs) has decreased to nanometers, while device integration density has increased. This book aims to present technical approaches that address the need for new nanoelectronic materials and devices. The focus is on new concepts and knowledge in nanoscience and nanotechnology for applications in logic, memory, sensors, photonics, and renewable energy. This research on nanoelectronic materials and devices will be instructive in finding solutions to address the challenges of current electronics in switching speed, power consumption, and heat dissipation and will be of great interest to academic society and the industry.
Author :
Publisher : Academic Press
ISBN 13 : 012809723X
Total Pages : 490 pages
Book Rating : 4.1/5 (28 download)
Download or read book III-Nitride Semiconductor Optoelectronics written by and published by Academic Press. This book was released on 2017-01-05 with total page 490 pages. Available in PDF, EPUB and Kindle. Book excerpt: III-Nitride Semiconductor Optoelectronics covers the latest breakthrough research and exciting developments in the field of III-nitride compound semiconductors. It includes important topics on the fundamentals of materials growth, characterization, and optoelectronic device applications of III-nitrides. Bulk, quantum well, quantum dot, and nanowire heterostructures are all thoroughly explored. Contains the latest breakthrough research in III-nitride optoelectronics Provides a comprehensive presentation that covers the fundamentals of materials growth and characterization and the design and performance characterization of state-of-the-art optoelectronic devices Presents an in-depth discussion on III-nitride bulk, quantum well, quantum dot, and nanowire technologies
Author :
Publisher :
ISBN 13 :
Total Pages : 92 pages
Book Rating : 4.:/5 (227 download)
Download or read book Growth and Doping of Al(x)Ga(1-x)N Films by Electron Cyclotron Resonance Assisted Molecular Beam Epitaxy written by and published by . This book was released on 1992 with total page 92 pages. Available in PDF, EPUB and Kindle. Book excerpt: Growth and doping of GaN by ECR assisted MBE is reported. We report on the role of the GaN-buffer and AlN-buffer, and their combination on the two dimensional nucleation rate and lateral growth rate. Conditions for quasi layer by layer growth were identified. XRD was used to study secondary phase, the direction and quality of orientational ordering in and out of the substrate, and homogeneous and inhomogeneous strain. Relatively high mobility autodoped films were produced and their transport mechanism was investigated. Intrinsic GaN films were produced and were doped n- and p-type with Si and Mg respectively, without requiring annealing for dopant activation. RIE processing of GaN was developed and metal contacts were investigated. A direct correlation between the metal work function and barrier height was also found.
Author : Wengang (Wayne) Bi
Publisher : CRC Press
ISBN 13 : 1351648055
Total Pages : 775 pages
Book Rating : 4.3/5 (516 download)
Download or read book Handbook of GaN Semiconductor Materials and Devices written by Wengang (Wayne) Bi and published by CRC Press. This book was released on 2017-10-20 with total page 775 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book addresses material growth, device fabrication, device application, and commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and power electronics devices. It begins with an overview on basics of semiconductor materials, physics, growth and characterization techniques, followed by detailed discussion of advantages, drawbacks, design issues, processing, applications, and key challenges for state of the art GaN-based devices. It includes state of the art material synthesis techniques with an overview on growth technologies for emerging bulk or free standing GaN and AlN substrates and their applications in electronics, detection, sensing, optoelectronics and photonics. Wengang (Wayne) Bi is Distinguished Chair Professor and Associate Dean in the College of Information and Electrical Engineering at Hebei University of Technology in Tianjin, China. Hao-chung (Henry) Kuo is Distinguished Professor and Associate Director of the Photonics Center at National Chiao-Tung University, Hsin-Tsu, Taiwan, China. Pei-Cheng Ku is an associate professor in the Department of Electrical Engineering & Computer Science at the University of Michigan, Ann Arbor, USA. Bo Shen is the Cheung Kong Professor at Peking University in China.
Author : Patrick Waltereit
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (248 download)
Download or read book (AI,Ga,In)N Heterostructures Grown Along Polar and Non-polar Directions by Plasma-assisted Molecular Beam Epitaxy written by Patrick Waltereit and published by . This book was released on 2001 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Melvin Barker McLaurin
Publisher :
ISBN 13 :
Total Pages : 304 pages
Book Rating : 4.:/5 (759 download)
Download or read book Growth of Non-polar and Semi-polar GaN with Plasma Assisted Molecular Beam Epitaxy written by Melvin Barker McLaurin and published by . This book was released on 2007 with total page 304 pages. Available in PDF, EPUB and Kindle. Book excerpt: Finally, we propose a possible source of anisotropic mobilities and enhanced p-type conduction in faulted films is proposed. Basal plane stacking faults are treated as heterostructures of the wurtzite and zincblende polytypes of GaN. The band parameter and polarization differences between the polytypes result in large offsets in both the conduction and valence band edges at the stacking faults. Anisotropy results from scattering from the band-edge offsets and enhanced mobility from screening due to charge accumulation at these band edge offsets.
Author : Patrick Waltereit
Publisher :
ISBN 13 :
Total Pages : 206 pages
Book Rating : 4.:/5 (516 download)
Download or read book (Al,Ga,In)N Heterostructures Grown Along Polar and Non-polar Directions by Plasma-assisted Molecular Beam Epitaxy written by Patrick Waltereit and published by . This book was released on 2001 with total page 206 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Christian Mietze
Publisher :
ISBN 13 :
Total Pages : 157 pages
Book Rating : 4.:/5 (865 download)
Download or read book Cubic AlN/GaN Multi-quantum-wells for Unipolar Device Applications written by Christian Mietze and published by . This book was released on 2013 with total page 157 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 250 pages
Book Rating : 4.F/5 ( download)
Download or read book Ceramic Abstracts written by and published by . This book was released on 1998 with total page 250 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 92 pages
Book Rating : 4.:/5 (227 download)
Download or read book Growth and Doping of Al(x)Ga(1-x) Films by Electron Cyclotron Resonance Assisted Molecular Beam Epitaxy written by and published by . This book was released on 1992 with total page 92 pages. Available in PDF, EPUB and Kindle. Book excerpt: Growth and doping of GaN by ECR assisted MBE is reported. We report on the role of the GaN-buffer and AlN-buffer, and their combination on the two dimensional nucleation rate and lateral growth rate. Conditions for quasi layer by layer growth were identified. XRD was used to study secondary phase, the direction and quality of orientational ordering in and out of the substrate, and homogeneous and inhomogeneous strain. Relatively high mobility autodoped films were produced and their transport mechanism was investigated. Intrinsic GaN- films were produced and were doped n- and p-type with Si and Mg respectively, without requiring annealing for dopant activation. RIE processing of GaN was developed and metal contacts were investigated. A direct correlation between the metal work function and barrier height was also found.
